2SD2702 [ROHM]
General purpose amplification (12V, 1.5A); 通用扩增( 12V , 1.5A )![2SD2702](http://pdffile.icpdf.com/pdf1/p00095/img/icpdf/2SD2702_503274_icpdf.jpg)
型号: | 2SD2702 |
厂家: | ![]() |
描述: | General purpose amplification (12V, 1.5A) |
文件: | 总3页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
2SD2702
Transistors
General purpose amplification (12V, 1.5A)
2SD2702
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
(2)
(3)
zFeatures
(1)
1) A collector current is large.
2) Collector saturation voltage is low.
0.2
1.7
2.1
0.2
<
CE(sat)
V
200mV
=
C
B
= 25mA
at I = 500mA / I
0.15Max.
ROHM : TUMT3
Abbreviated symbol : ES (1) Base
(2) Emitter
(3) Collector
zPackaging specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
15
Unit
V
Package
Taping
TL
VCBO
VCEO
VEBO
Type
Code
12
V
Basic ordering unit (pieces)
3000
6
V
2SD2702
I
C
1.5
3
A
Collector current
∗1
I
CP
A
0.4
Power dissipation
P
C
W
∗2
0.8
150
Junction temperature
Tj
°C
°C
Range of storage temperature Tstg
−55 to +150
∗1 Single pulse, P
W
=1ms
25×
t 0.8mm Ceramic substrate
∗2 Mounted on a 25
×
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
15
12
6
−
−
−
−
−
−
−
V
V
I
I
I
C
=10µA
=1mA
Collector-emitter breakdown voltage BVCEO
C
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
−
V
E
=10µA
I
CBO
EBO
CE(sat)
FE
−
100
100
nA
nA
V
CB=15V
I
−
VEB=6V
Collector-emitter saturation voltage
DC current gain
V
−
85 200 mV
I
C
/I
B
=500mA/25mA
=2V/200mA
CE=2V, I =−200mA, f=100MHz
CB=10V, I =0A, f=1MHz
∗
∗
h
270
−
−
680
−
−
V
V
V
CE/IC
Transition frequency
f
T
400
12
MHz
pF
E
Collector output capacitance
Cob
−
−
E
∗ Pulsed
Rev.A
1/2
2SD2702
Transistors
zElectrical characteristic curves
1000
10
1
1
0.1
IC/IB=20/1
Pulsed
Ta=25°C
Ta=100°C
V
CE=2V
Ta=−40°C
Ta=25°C
Ta=100°C
V
BE(sat)
Ta=25°C
Ta=−40°C
Ta=100°C
0.1
100
Ta=25°C
Ta=−40°C
I
C/I
B
=50/1
0.01
0.001
V
CE(sat)
IC/IB
=20/1
0.01
0.001
IC/IB=10/1
V
CE=2V
Pulsed
10
0.001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
1
1000
1000
V
CE=2V
Ta=25°C
Pulsed
V
CE=2V
f=100MHz
tstg
100
10
1
Ta=100°C
Ta=25°C
0.1
0.01
100
Ta=−40°C
tdon
tf
V
CE=2V
Ta=25°C
Pulsed
tr
0.001
0
10
−0.001
0.5
1.0
1.5
0.01
0.1
1
10
−0.01
−0.1
−1
(A)
−10
EMITTER CURRENT : I
E
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.5 Gain bandwidth product
vs. emitter current
Fig.4 Grounded emitter propagation
characteristics
Fig.6 Switching time
100
IE=0A
f=1MHz
Cib
Ta=25°C
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00281/img/page/2SD2702TL_1678130_files/2SD2702TL_1678130_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00281/img/page/2SD2702TL_1678130_files/2SD2702TL_1678130_2.jpg)
2SD2702TL
Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, TUMT3, 3 PIN
ROHM
![](http://pdffile.icpdf.com/pdf1/p00153/img/page/2SD2703_848067_files/2SD2703_848067_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00153/img/page/2SD2703_848067_files/2SD2703_848067_2.jpg)
2SD2703TL
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, TUMT3, 3 PIN
ROHM
![](http://pdffile.icpdf.com/pdf1/p00153/img/page/2SD2704K_848068_files/2SD2704K_848068_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00153/img/page/2SD2704K_848068_files/2SD2704K_848068_2.jpg)
2SD2705STP
Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明