2SD2700_1 [ROHM]
Low frequency amplifier; 低频放大器
| 型号： | 2SD2700_1 |
| 厂家： | 
ROHM |
| 描述： | Low frequency amplifier |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2700
Transistors
Low frequency amplifier
2SD2700
zDimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) ≦ 180mV
at IC = 1A / IB = 50mA
ROHM : TUMT3 Abbreviated symbol : FW
(1) Base
(2) Emitter
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Symbol
Limits
15
12
6
Unit
V
V
VCBO
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
V
I
C
2
4
A
A∗1
Collector current
I
CP
0.4
0.8∗2
P
C
W
Power dissipation
Junction temperature
Tj
Tstg
150
−55 to +150
°C
°C
Range of storage temperature
∗1 Single pulse, P
W
=1ms
25
∗2 Mounted on a 25
×
×
t0.8mm Ceramic substrate
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
−
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
15
12
6
−
−
−
−
−
90
−
360
20
I
I
I
C
=10µA
=1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
V
C
−
V
E
=10µA
CB=15V
EB=6V
I
CBO
EBO
CE(sat)
FE
−
−
−
270
−
100
100
180
680
−
nA
nA
mV
−
MHz
pF
V
V
I
Emitter cutoff current
V
I
C=1A, I
B
=50mA
Collector-emitter saturation voltage
DC current gain
h
V
V
V
CE=2V, I
CE=2V, I
C
=200mA∗
f
T
E
=−200mA, f=100MHz∗
=0A, f=1MHz
Transition frequency
CB=10V, I
E
Cob
−
−
Corrector output capacitance
∗ Pulsed
zPackaging specifications
Package
Code
Taping
TL
Basic ordering unit (pieces)
3000
Type
2SD2700
Rev.B
1/2
2SD2700
Transistors
zElectrical characteristic curves
1000
1
0.1
1
V
CE=2V
I
V
C B=20/1
/I
CE=2V
Pulsed
Ta=100°C
Ta=25°C
Pulsed
Pulsed
Ta=25°C
Ta=25°C
Ta=−40°C
0.1
Ta=100°C
Ta=−40°C
100
I
C/I
B
=50/1
0.01
0.001
0.01
IC/IB
=20/1
I
C/I
B
=10/1
0.001
10
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
Fig.3 Collector-emitter saturation voltage
vs. collector current
Fig.2 Base-emitter saturation voltage
vs. collector current
vs. collector current
10
1
1000
1000
Ta=25°C
Ta=25°C
V
CE=2V
V
CE=5V
V
CE=2V
Pulsed
f=100MHz
f=100MHz
tstg
100
Ta=100°C
Ta=25°C
100
0.1
0.01
Ta=−40°C
10
1
tdon
tf
tr
0.001 0
0.5
1
1.5
0.01
0.1
1
10
10
0.001
0.01
0.1
1
10
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : I
E
(A)
COLLECTOR CURRENT : I
Fig.6 Switching time
C (A)
Fig.5 Gain bandwidth product
vs. emitter current
Fig.4 Grounded emitter propagation
characteristics
1000
Ta
=
25˚C
0A
1MHz
I
C=
f
=
Cib
100
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB V)
(
COLLECTOR TO BASE VOLTAGE : VCB V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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