2SD2700_1 [ROHM]

Low frequency amplifier; 低频放大器
2SD2700_1
型号: 2SD2700_1
厂家: ROHM    ROHM
描述:

Low frequency amplifier
低频放大器

放大器
文件: 总3页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SD2700  
Transistors  
Low frequency amplifier  
2SD2700  
zDimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Driver  
zFeatures  
1) A collector current is large.  
2) VCE(sat) 180mV  
at IC = 1A / IB = 50mA  
ROHM : TUMT3 Abbreviated symbol : FW  
(1) Base  
(2) Emitter  
(3) Collector  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
15  
12  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
Collector-emitter voltage  
Emitter-base voltage  
V
I
C
2
4
A
A1  
Collector current  
I
CP  
0.4  
0.82  
P
C
W
Power dissipation  
Junction temperature  
Tj  
Tstg  
150  
55 to +150  
°C  
°C  
Range of storage temperature  
1 Single pulse, P  
W
=1ms  
25  
2 Mounted on a 25  
×
×
t0.8mm Ceramic substrate  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
BVCBO  
BVCEO  
BVEBO  
15  
12  
6
90  
360  
20  
I
I
I
C
=10µA  
=1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
100  
100  
180  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
V
I
C=1A, I  
B
=50mA  
Collector-emitter saturation voltage  
DC current gain  
h
V
V
V
CE=2V, I  
CE=2V, I  
C
=200mA∗  
f
T
E
=−200mA, f=100MHz∗  
=0A, f=1MHz  
Transition frequency  
CB=10V, I  
E
Cob  
Corrector output capacitance  
Pulsed  
zPackaging specifications  
Package  
Code  
Taping  
TL  
Basic ordering unit (pieces)  
3000  
Type  
2SD2700  
Rev.B  
1/2  
2SD2700  
Transistors  
zElectrical characteristic curves  
1000  
1
0.1  
1
V
CE=2V  
I
V
C B=20/1  
/I  
CE=2V  
Pulsed  
Ta=100°C  
Ta=25°C  
Pulsed  
Pulsed  
Ta=25°C  
Ta=25°C  
Ta=−40°C  
0.1  
Ta=100°C  
Ta=−40°C  
100  
I
C/I  
B
=50/1  
0.01  
0.001  
0.01  
IC/IB  
=20/1  
I
C/I  
B
=10/1  
0.001  
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : IC (A)  
Fig.1 DC current gain  
Fig.3 Collector-emitter saturation voltage  
vs. collector current  
Fig.2 Base-emitter saturation voltage  
vs. collector current  
vs. collector current  
10  
1
1000  
1000  
Ta=25°C  
Ta=25°C  
V
CE=2V  
V
CE=5V  
V
CE=2V  
Pulsed  
f=100MHz  
f=100MHz  
tstg  
100  
Ta=100°C  
Ta=25°C  
100  
0.1  
0.01  
Ta=−40°C  
10  
1
tdon  
tf  
tr  
0.001 0  
0.5  
1
1.5  
0.01  
0.1  
1
10  
10  
0.001  
0.01  
0.1  
1
10  
BASE TO EMITTER CURRENT : VBE (V)  
EMITTER CURRENT : I  
E
(A)  
COLLECTOR CURRENT : I  
Fig.6 Switching time  
C (A)  
Fig.5 Gain bandwidth product  
vs. emitter current  
Fig.4 Grounded emitter propagation  
characteristics  
1000  
Ta  
=
25˚C  
0A  
1MHz  
I
C=  
f
=
Cib  
100  
Cob  
10  
1
0.1  
1
10  
100  
EMITTER TO BASE VOLTAGE : VEB V)  
(
COLLECTOR TO BASE VOLTAGE : VCB V)  
(
Fig.7 Collector output capacitance  
vs. collector-base voltage  
Emitter input capacitance  
vs. emitter-base voltage  
Rev.B  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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