2SD2440-GR [TOSHIBA]
TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-16F1A, 3 PIN, BIP General Purpose Power;
| 型号： | 2SD2440-GR |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-16F1A, 3 PIN, BIP General Purpose Power 局域网 开关 晶体管 |
| 文件： | 总5页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2440
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
Unit: mm
•
High breakdown voltage: V
: V
= 100 V
= 18 V
CBO
EBO
•
•
•
Low saturation voltage: V
= 1.2 V (max) (I = 5 A, I = 1 A)
CE (sat) C B
High speed: t = 1 µs (typ.) (I = 5 A, I = ±0.5 A)
f
C
B
High DC current gain: h
= 200 (min) (V
= 5 V, I = 0.5 A)
CE C
FE
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
100
60
18
6
V
V
V
CBO
CEO
EBO
DC
I
C
Collector current
A
A
Pulse
I
12
2
CP
JEDEC
JEITA
―
―
Base current
I
B
Collector power dissipation
(Tc = 25°C)
P
40
W
C
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Junction temperature
Storage temperature range
T
150
°C
°C
j
T
stg
−55 to 150
1
2004-07-07
2SD2440
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 100 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
I
V
V
V
―
―
―
60
―
―
―
―
10
5
µA
mA
µA
V
CBO
CER
EBO
CB
CE
EB
E
Collector cut-off current
= 80 V, R = 50 Ω
BE
Emitter cut-off current
= 15 V, I = 0
2
C
Collector-emitter breakdown voltage
V
I
C
= 50 mA, I = 0
―
(BR) CEO
B
h
FE (1)
V
CE
= 5 V, I = 0.5 A
200
―
900
C
DC current gain
(Note)
h
V
= 5 V, I = 5 A
20
―
―
―
―
―
―
―
5
100
1.2
2.5
―
FE (2)
CE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
I
I
= 5 A, I = 1 A
V
V
CE (sat)
BE (sat)
C
B
V
= 5 A, I = 1 A
B
C
f
V
CE
V
CB
= 10 V, I = 0.5 A
MHz
pF
T
C
Collector output capacitance
C
ob
= 10 V, I = 0, f = 1 MHz
71
―
E
Turn-on time
t
―
―
―
1
2
1
2
4
3
on
Output
20 µs
I
I
B1
B2
Input
Switching time
µs
Storage time
Fall time
t
stg
V
= 50 V
CC
t
f
I
B1
= −I = 0.5 A, duty cycle ≤ 1%
B2
Note: h
classification GR: 200 to 400, BL: 300 to 600, V: 450 to 900
FE (1)
Marking
Ｄ2440
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
2
2004-07-07
2SD2440
I
– V
I – V
C BE
C
CE
16
12
8
12
10
8
Common emitter
Common emitter
Tc = 25°C
V
CE
= 5 V
3
2
1
0.5
6
0.3
0.2
4
0.1
4
50 m
20 m
2
125
0.4
Tc = −55°C
25
I
= 5 mA
B
0
0
0
0
2
4
6
8
10
0.8
1.2
1.6
2.0
(V)
2.4
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
BE
CE
h
FE
– I
C
V
– I
C
CE (sat)
3000
1000
10
125
Common emitter
= 5 V
Common emitter
V
CE
I
C
/I = 5
B
3
1
25
500
300
Tc = −55°C
100
0.3
0.1
50
30
Tc = 125°C
25
−55
10
5
0.03
0.01
0.03
0.1
0.3
1
3
10 20
0.01
Collector current
I
C
(A)
0.005
0.01
0.03
0.1
0.3
1
3
10 20
Collector current
I
(A)
C
V
– I
C
BE (sat)
10
Common emitter
5
3
r
– t
w
I /I = 5
C B
th (t)
10
Curves should be applied in
thermal limited area.
• Infinite heat sink
5
3
Tc = −55°C
1
0.5
0.3
125
25
1
0.5
0.3
0.1
0.05
0.01
0.1
0.001
0.03
0.1
0.3
1
3
10 20
0.01
0.1
Pulse width
1
10
Collector current
I
(A)
t
w
(s)
C
3
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2SD2440
Safe Operating Area
30
10
I
max (pulsed)*
C
1 ms*
10 ms*
I
C
max (continuous)
5
3
DC operation
Tc = 25°C
1
100 ms*
0.5
0.3
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
V
max
50
CEO
0.1
1
3
5
10
30
100
Collector-emitter voltage
V
(V)
CE
4
2004-07-07
2SD2440
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-07-07
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