2SD2441 [PANASONIC]
Silicon NPN epitaxial planer type(For low-frequency output amplification); NPN硅外延平面型(对于低频输出放大)![2SD2441](http://pdffile.icpdf.com/pdf1/p00079/img/icpdf/2SD2441_415543_icpdf.jpg)
型号: | 2SD2441 |
厂家: | ![]() |
描述: | Silicon NPN epitaxial planer type(For low-frequency output amplification) |
文件: | 总2页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Transistor
2SD2441
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
1.5±0.1
4.5±0.1
1.6±0.2
Features
■
●
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
45°
0.4±0.08
0.4±0.04
0.5±0.08
1.5±0.1
Absolute Maximum Ratings (Ta=25˚C)
3.0±0.15
■
3
2
1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
10
marking
10
V
7
V
2
A
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
IC
1.5
1
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
W
˚C
˚C
Marking symbol : 1V
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
VCB = 7V, IE = 0
IC = 10µA, IE = 0
C = 1mA, IB = 0
min
typ
max
Unit
µA
V
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
1
VCBO
VCEO
VEBO
hFE
10
10
7
I
V
IE = 10µA, IC = 0
V
Forward current transfer ratio
VCE = 1V, IC = 400mA*2
IC = 1A, IB = 25mA*2
VCB = 60V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
IF = 500mA
200
700
Collector to emitter saturation voltage VCE(sat)
0.17
190
50
0.25
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Forward voltage
Cob
*1
VF
1.3
V
*1 Applicable to the built-in diode.
*2 Pulse measurement
1
Transistor
2SD2441
PC — Ta
IC — VCE
IC — VBE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
2.0
1.6
1.2
0.8
0.4
0
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
IB=3.0mA
VCE=1V
2.5mA
2.0mA
25˚C
Ta=75˚C
–25˚C
1.5mA
1.0mA
0.5mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
10
600
600
500
400
300
200
100
0
IC/IB=50
VCB=6V
f=200MHz
Ta=25˚C
VCE=1V
3
1
500
400
300
200
100
0
Ta=75˚C
25˚C
0.3
0.1
Ta=75˚C
25˚C
–25˚C
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
–1
–3
–10
–30
–100
( )
A
(
A
)
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
120
100
80
60
40
20
0
IE=0
f=200MHz
Ta=25˚C
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
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