2SD2441 [PANASONIC]

Silicon NPN epitaxial planer type(For low-frequency output amplification); NPN硅外延平面型(对于低频输出放大)
2SD2441
型号: 2SD2441
厂家: PANASONIC    PANASONIC
描述:

Silicon NPN epitaxial planer type(For low-frequency output amplification)
NPN硅外延平面型(对于低频输出放大)

文件: 总2页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Transistor  
2SD2441  
Silicon NPN epitaxial planer type  
For low-frequency output amplification  
Unit: mm  
1.5±0.1  
4.5±0.1  
1.6±0.2  
Features  
Mini Power type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing and the maga-  
zine packing.  
45°  
0.4±0.08  
0.4±0.04  
0.5±0.08  
1.5±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
3.0±0.15  
3
2
1
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
10  
marking  
10  
V
7
V
2
A
1:Base  
2:Collector  
3:Emitter  
EIAJ:SC–62  
Mini Power Type Package  
IC  
1.5  
1
A
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
W
˚C  
˚C  
Marking symbol : 1V  
Tj  
150  
Tstg  
–55 ~ +150  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = 7V, IE = 0  
IC = 10µA, IE = 0  
C = 1mA, IB = 0  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
1
VCBO  
VCEO  
VEBO  
hFE  
10  
10  
7
I
V
IE = 10µA, IC = 0  
V
Forward current transfer ratio  
VCE = 1V, IC = 400mA*2  
IC = 1A, IB = 25mA*2  
VCB = 60V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
IF = 500mA  
200  
700  
Collector to emitter saturation voltage VCE(sat)  
0.17  
190  
50  
0.25  
V
MHz  
pF  
Transition frequency  
fT  
Collector output capacitance  
Forward voltage  
Cob  
*1  
VF  
1.3  
V
*1 Applicable to the built-in diode.  
*2 Pulse measurement  
1
Transistor  
2SD2441  
PC — Ta  
IC — VCE  
IC — VBE  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
Printed circut board: Copper  
foil area of 1cm2 or more, and  
the board thickness of 1.7mm  
for the collector portion.  
Ta=25˚C  
IB=3.0mA  
VCE=1V  
2.5mA  
2.0mA  
25˚C  
Ta=75˚C  
–25˚C  
1.5mA  
1.0mA  
0.5mA  
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
12  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
(
)
(
V
)
( )  
Base to emitter voltage VBE V  
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
VCE(sat) — IC  
hFE — IC  
fT — IE  
10  
600  
600  
500  
400  
300  
200  
100  
0
IC/IB=50  
VCB=6V  
f=200MHz  
Ta=25˚C  
VCE=1V  
3
1
500  
400  
300  
200  
100  
0
Ta=75˚C  
25˚C  
0.3  
0.1  
Ta=75˚C  
25˚C  
–25˚C  
–25˚C  
0.03  
0.01  
0.003  
0.001  
0.01 0.03  
0.1  
0.3  
1
3
10  
0.01 0.03  
0.1  
0.3  
1
3
10  
–1  
–3  
–10  
–30  
–100  
( )  
A
(
A
)
(
)
Collector current IC  
Collector current IC  
Emitter current IE mA  
Cob — VCB  
120  
100  
80  
60  
40  
20  
0
IE=0  
f=200MHz  
Ta=25˚C  
1
3
10  
30  
100  
( )  
V
Collector to base voltage VCB  
2

相关型号:

2SD2443

Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC

2SD2444K

Power Transistor (-15V, -1A, 15V, 1A)
ROHM

2SD2444K

Power Transistor
KEXIN

2SD2444K

IC = 1A. Low saturation voltage. Collector-base voltage VCBO 15 V
TYSEMI

2SD2444K_1

Power Transistor (15V, 1A)
ROHM

2SD2449

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
TOSHIBA

2SD2449

isc Silicon NPN Darlington Power Transistor
ISC

2SD2449-A

TRANSISTOR 10 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power
TOSHIBA

2SD2449-C

暂无描述
TOSHIBA

2SD2449A

TRANSISTOR | BJT | DARLINGTON | NPN | 160V V(BR)CEO | 10A I(C) | TO-264AA
ETC

2SD2449B

TRANSISTOR | BJT | DARLINGTON | NPN | 160V V(BR)CEO | 10A I(C) | TO-264AA
ETC