2SD2444K [KEXIN]
Power Transistor; 功率晶体管
| 型号： | 2SD2444K |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Power Transistor |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Power Transistor
2SD2444K
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
IC = 1A.
Low saturation voltage.
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
15
15
V
6
V
Collector current
1
0.2
A
Collector power dissipation
Junction temperature
Storage temperature
PC
W
Tj
150
Tstg
-55 to +150
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
15
15
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
V
V
ICBO
IEBO
VCB=12V
VEB=5V
0.5
0.5
0.3
390
ìA
ìA
V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
VCE(sat) IC/IB=400mA/20mA
hFE VCE=2V, IC=50mA
fT
180
VCE=2V, IE= -50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
200
15
MHz
pF
Transition frequency
Cob
hFE Classification
Marking
hFE
BSR
180 390
1
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