2SC5819(TE12L,F) [TOSHIBA]
TRANSISTOR NPN 20V 1.5A SC-62;
| 型号： | 2SC5819(TE12L,F) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR NPN 20V 1.5A SC-62 |
| 文件： | 总5页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5819
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5819
Industrial Applications
Unit: mm
High-Speed Switching Applications
DC-DC Converter Applications
•
•
•
High DC current gain: h
= 400 to 1000 (I = 0.15 A)
FE C
Low collector-emitter saturation voltage: V
= 0.12 V (max)
CE (sat)
High-speed switching: t = 45 ns (typ.)
f
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
40
30
V
V
V
V
CBO
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
V
CEX
CEO
EBO
V
V
20
7
DC
I
1.5
C
Collector current
Base current
A
mA
W
Pulse
I
2.5
CP
JEDEC
JEITA
―
I
150
2.0
B
SC-62
2-5K1A
t = 10 s
Collector power
dissipation
P
(Note 1)
C
DC
1.0
TOSHIBA
Junction temperature
T
150
−55 to 150
°C
°C
j
Weight: 0.05 g (typ.)
Storage temperature range
T
stg
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-10
2SC5819
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
= 40 V, I = 0
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
100
100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 7 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 10 mA, I = 0
20
400
200
⎯
⎯
C
B
h
FE
h
FE
(1)
(2)
V
V
= 2 V, I = 0.15 A
⎯
1000
⎯
CE
CE
C
DC current gain
= 2 V, I = 0.5 A
⎯
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= 0.5 A, I = 10 mA
⎯
0.12
1.10
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= 0.5 A, I = 10 mA
⎯
⎯
B
C
V
= 10 V, I = 0, f = 1 MHz
⎯
18
43
295
45
pF
ob
CB
E
t
⎯
⎯
See Figure 1.
r
∼
Switching time
V
I
12 V, R = 24 Ω
ns
Storage time
Fall time
t
⎯
⎯
CC
L
stg
= −I = 17 mA
t
f
⎯
⎯
B1
B2
V
CC
20 μs
I
I
I
B1
B1
B2
Output
Input
I
B2
Duty cycle < 1%
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
Part No. (or abbreviation code)
3 D
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
2
2006-11-10
2SC5819
I
– V
h
– I
FE C
C
CE
1.5
10000
1000
100
Common emitter
= 2 V
Single nonrepetitive pulse
20
15
10
8
6
V
CE
Ta = 100°C
4
1
I
= 2 mA
B
25
−55
0.5
10
0.001
Common emitter
Ta = 25°C
0.01
0.1
1
10
Single nonrepetitive pulse
Collector current
I
C
(A)
0
0
0.2
0.4
0.6
0.8
Collector-emitter voltage
V
(V)
CE
V
– I
V
– I
BE (sat) C
CE (sat)
C
1
10
Common emitter
/I = 50
Single nonrepetitive
pulse
Common emitter
/I = 50
Single nonrepetitive pulse
I
C B
I
C B
0.1
Ta = 100°C
−55
25
1
−55
25
0.01
0.001
Ta = 100°C
0.1
0.001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
I
– V
BE
C
1.5
1.2
0.9
0.6
0.3
0
Common emitter
= 2 V
V
CE
Single nonrepetitive
pulse
Ta = 100°C
−55
25
V
0
0.3
0.6
0.9
1.2
1.5
Base-emitter voltage
(V)
BE
3
2006-11-10
2SC5819
r
th
– t
w
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe Operating Area
10
I
max (pulsed) ♦
10 ms♦ 1 ms♦ 100 μs♦
100 ms♦*
C
I
max (continuous)
C
1
10 s♦*
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
Ta = 25°C
0.1
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
1
10
V
100
Collector-emitter voltage
(V)
CE
4
2006-11-10
2SC5819
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-10
相关型号：
2SC5824T100
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MPT3, 3 PIN
ROHM
2SC5824T100Q
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 PIN
ROHM
2SC5824T100R
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明