2SC5823 [SANYO]
Switching Regulator Applications; 开关稳压器的应用
| 型号： | 2SC5823 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Switching Regulator Applications |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN7785
NPN Triple Diffused Planar Silicon Transistor
2SC5823
Switching Regulator Applications
Features
Package Dimensions
unit : mm
2045B
•
High breakdown voltage.
•
High-speed switching.
•
Wide ASO.
[2SC5823]
•
Adoption of MBIT process.
6.5
2.3
5.0
0.5
4
0.85
0.7
1.2
0.6
0.5
1 : Base
2 : Collector
3 : Emitter
1
2
3
4 : Collector
2.3
2.3
SANYO : TP
unit : mm
2044B
[2SC5823]
6.5
2.3
5.0
0.5
4
0.5
0.85
1
2
3
1 : Base
0.6
1.2
0 ‘0.2
2 : Collector
3 : Emitter
4 : Collector
2.3
2.3
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004CB TS IM TA-101180 No.7785-1/4
2SC5823
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
700
400
8
V
V
I
C
1.5
3
A
Collector Current (Pulse)
Base Current
I
PW≤300µs, duty cycle≤10%
Tc=25°C
A
CP
I
B
0.7
1.0
10
A
W
W
°C
°C
Collector Dissipation
P
C
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
10
I
V
V
V
V
V
V
V
=400V, I =0
µA
µA
CBO
CB
EB
CE
CE
CE
CE
CB
E
Emitter Cutoff Current
I
=5V, I =0
10
EBO
C
h
FE
h
FE
h
FE
1
2
3
=5V, I =0.1A
20
10
10
50
C
DC Current Gain
=5V, I =0.7A
C
=5V, I =1mA
C
Gain-Bandwidth Product
Output Capacitance
f
=10V, I =0.1A
C
20
10
MHz
pF
V
T
Cob
=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
V
(sat)
I
I
I
I
I
=0.7A, I =0.14A
0.8
1.5
CE
C
C
C
C
B
(sat)
=0.7A, I =0.14A
V
BE
B
V
V
V
=1mA, I =0
700
400
8
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=5mA, R =∞
BE
V
=1mA, I =0
V
E
C
t
I
C
I
C
I
C
=1A, I =0.2A, I =--0.4A,R =200Ω, V =200V
B1 B2 CC
0.5
2.5
µs
µs
µs
on
L
Storage Time
t
=1A, I =0.2A, I =--0.4A,R =200Ω, V =200V
B1 B2 CC
stg
L
Fall Time
t
=1A, I =0.2A, I =--0.4A,R =200Ω, V =200V
0.25
f
B1
B2
L
CC
Switching Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
50Ω
+
+
100µF
470µF
V
= --5V
V
=200V
CC
BE
I
-- V
I
-- V
C BE
C
CE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.5
1.0
V
=5V
CE
C
°
a=120
T
0.5
0
0.2
0
I =0
9
B
0
1
2
3
4
5
6
7
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT06214
Collector-to-Emitter Voltage, V
-- V IT06213
Base-to-Emitter Voltag, V -- V
BE
CE
No.7785-2/4
2SC5823
h
FE
-- I
V
(sat) -- I
CE
C
C
10
7
5
3
2
I
C
/ I =5
B
V
CE
=5V
3
2
100
7
5
1.0
7
5
3
2
3
2
10
7
5
0.1
7
5
3
2
3
2
1.0
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5 7
0.001
5
0.01
0.1
1.0
0.1
1.0
10
IT06216
IT06215
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
SW Time -- I
BE
C
C
10
I
C
/ I =5
B
I
I
I
=5
=2
C / B1
7
5
I
B2 / B1
R load
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.01
0.1
0.1
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
0.1
1.0
1.0
Collector Current, I -- A
IT06217
Collector Current, I -- A
IT06218
C
C
Forward Bias A S O
Reverse Bias A S O
10
10
7
5
7
5
I
=3A
CP
3
2
I =1.5A
C
3
2
1.0
7
5
1.0
3
2
7
5
0.1
7
5
3
2
3
2
0.1
7
5
0.01
7
5
Tc=25°C
3
2
3
2
Tc=25°C
Single pulse
I
= --0.3A
B2
L=500µH, Single pulse
0.001
1.0
0.01
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
100
1000
-- V IT06219
100
1000
Collector-to-Emitter Voltage, V
CE
Collector-to-Emitter Voltage, V
-- V
IT06220
CE
P
-- Ta
P
-- Tc
C
C
1.2
1.0
0.8
0.6
0.4
12
10
8
6
4
0.2
0
2
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT06665
Case Temperature, Tc -- °C
IT06222
No.7785-3/4
2SC5823
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject
to change without notice.
PS No.7785-4/4
相关型号：
2SC5824T100
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MPT3, 3 PIN
ROHM
2SC5824T100Q
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 PIN
ROHM
2SC5824T100R
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 PIN
ROHM
2SC5825TLQ
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, SC-63, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明