2SC5820WU-TL-H [RENESAS]
2SC5820WU-TL-H;
| 型号： | 2SC5820WU-TL-H |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2SC5820WU-TL-H 振荡器 放大器 |
| 文件： | 总14页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
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names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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contained therein.
2SC5820
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
ADE-208-1604A (Z)
Rev.1
Nov. 2002
Features
•
•
High gain bandwidth product
fT = 20 GHz typ.
High power gain and low noise figure;
PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Note:
Marking is “WU–“.
2SC5820
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
12
4.0
V
1.5
V
35
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
100
Tj
150
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
µA
Test conditions
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
ICBO
ICEO
IEBO
hFE
Cob
fT
70
17
1
VCB = 12 V, IE = 0
1
µA
VCE = 4 V, RBE = ∞
VEB = 1.5 V, IC = 0
10
150
0.6
µA
110
0.3
20
VCE = 2 V, IC = 20 mA
VCB = 2 V, IE = 0, f = 1 MHz
pF
GHz
VCE = 2 V, IC = 30 mA
f = 2 GHz
Power gain
PG
NF
IP3
13
17.5
1.15
10
dB
VCE = 2 V, IC = 30 mA,
f = 1.8 GHz
Noise figure
1.7
dB
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
3rd. Order Intercept Point
dBm
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
Rev.1, Nov. 2002, page 2 of 12
2SC5820
Typical Output Characteristics
Collector Power Dissipation Curve
500
µ
A
50
40
30
20
10
200
150
100
50
450
µ
A
400 µA
A
A
350 µ
300 µ
200
150
µA
µ
A
0
50
100
200
0
1
2
4
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
VCE = 2 V
200
150
100
50
50
VCE = 2 V
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1
2
5
10
20
50 100
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Rev.1, Nov. 2002, page 3 of 12
2SC5820
Collector Output Capacitance vs.
Collector to Base Voltage
Emitter Input Capacitance vs.
Emitter to Base Voltage
1.0
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
IE
= 0
I
C
= 0
f = 1 MHz
f = 1 MHz
0.4
0
0
0
1
2
3
4
5
-1
1
0
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.0
0.8
0.6
0.4
30
20
IE = 0
f = 1 MHz
f= 2 GHz
V
CE = 2 V
10
0
0.2
0
0
1
2
3
4
5
1
2
5
10
20
50 100
Collector to Base Voltage VCB (V)
Collector Current
IC (mA)
Rev.1, Nov. 2002, page 4 of 12
2SC5820
S21 Parameter vs. Collector Current
3rd. Order Intercept Point (IP3)
f = 1.8 GHz
20
0
20
16
12
8
VCE = 2 V
Fundamental
f = 2 GHz
VCE = 2 V
Ic = 5 mA
-20
-40
-60
3rd. Harmonic
4
0
-80
-60
-40
-20
0
20
1
2
5
10
20
50
100
Input Power PIN (dBm)
Collector Current IC (mA)
Noise Figure vs. Collector Current
Power Gain vs. Collector Current
5
4
3
2
20
16
12
8
f = 1.8 GHz
f = 1.8 GHz
VCE = 3 V
VCE = 2 V
VCE = 1 V
VCE = 1 V
CE = 3 V
V
VCE = 2 V
1
0
4
0
2
5
20
1
10
100
50
1
2
5
10
20
50 100
Collector Current IC (mA)
Collector Current IC (mA)
Rev.1, Nov. 2002, page 5 of 12
2SC5820
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
1
Scale: 8 / div.
60°
90°
.8
1.5
.6
120°
2
.4
3
30°
4
5
150°
.2
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-2
-60°
-120°
-.6
-1.5
-.8
-1
-90°
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
( IC = 30 mA)
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
( IC = 30 mA)
S12 Parameter vs. Frequency
S
22 Parameter vs. Frequency
Scale: 0.06 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
150°
4
.2
0
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180°
0°
-10
-5
-4
-.2
-30°
-150°
-3
-.4
-2
-60°
-120°
-.6
-1.5
-.8
-1
-90°
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
Condition: VCE = 2 V, ZO = 50 Ω
100 to 3000 MHz (100 MHz Step)
( IC = 30 mA)
( IC = 30 mA)
Rev.1, Nov. 2002, page 6 of 12
2SC5820
S Parameter
(VCE = 2 V, IC = 5 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
0.844
0.835
0.838
0.809
0.781
0.745
0.710
0.688
0.659
0.639
0.633
0.596
0.578
0.570
0.556
0.548
0.541
0.532
0.529
0.523
0.520
0.521
0.521
0.521
0.520
0.522
0.525
0.526
0.529
0.532
ANG
MAG
15.26
15.07
14.59
13.94
13.16
12.39
11.71
10.89
10.16
9.47
8.77
8.40
7.92
7.47
7.04
6.68
6.37
6.08
5.77
5.53
5.29
5.03
4.86
4.67
4.53
4.33
4.21
4.05
3.91
3.82
ANG
159.9
162.9
154.8
147.1
139.9
133.1
127.7
121.8
117.0
112.8
108.6
105.2
101.5
98.3
MAG
ANG
78.9
84.0
80.2
72.5
67.5
61.6
56.2
52.0
47.7
46.8
41.1
40.4
37.6
37.4
32.9
32.9
32.5
30.2
30.6
28.8
30.4
28.1
26.6
26.8
26.8
26.2
27.6
27.4
25.5
24.6
MAG
0.976
0.973
0.953
0.919
0.879
0.828
0.779
0.728
0.682
0.641
0.601
0.560
0.528
0.499
0.473
0.449
0.422
0.400
0.384
0.370
0.349
0.345
0.326
0.312
0.297
0.292
0.280
0.275
0.260
0.249
ANG
-16.4
-11.7
-17.5
-23.6
-29.0
-33.9
-38.6
-41.9
-45.4
-47.4
-49.8
-51.8
-54.0
-55.4
-57.1
-58.0
-59.0
-60.6
-60.7
-62.1
-62.5
-63.6
-64.0
-64.8
-65.6
-66.7
-67.8
-68.9
-69.5
-70.5
100
200
-24.6
0.0124
0.0153
0.0236
0.0311
0.0387
0.0441
0.0506
0.0537
0.0579
0.0610
0.0643
0.0640
0.0665
0.0675
0.0685
0.0691
0.0693
0.0699
0.0716
0.0735
0.0719
0.0733
0.0752
0.0748
0.0752
0.0765
0.0771
0.0775
0.0785
0.0772
-23.1
300
-34.2
400
-45.7
500
-56.2
600
-66.8
700
-76.0
800
-85.5
900
-93.5
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
-101.0
-107.3
-115.4
-121.8
-128.0
-133.1
-138.8
-143.6
-149.0
-153.1
-157.1
-162.0
-164.7
-168.8
-172.0
-175.7
-178.4
178.2
175.6
172.4
169.7
95.6
92.5
90.1
87.5
85.0
83.2
80.4
79.1
76.4
74.4
72.3
70.6
68.6
67.2
64.8
62.7
Rev.1, Nov. 2002, page 7 of 12
2SC5820
(VCE = 2 V, IC = 10 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
0.717
0.712
0.699
0.667
0.635
0.600
0.572
0.553
0.533
0.522
0.515
0.499
0.492
0.490
0.484
0.484
0.482
0.481
0.481
0.481
0.483
0.484
0.488
0.489
0.491
0.495
0.501
0.503
0.508
0.510
ANG
MAG
25.92
24.87
23.25
21.32
19.27
17.37
15.73
14.26
12.97
11.90
10.90
10.16
9.46
ANG
167.8
156.2
145.5
136.0
127.6
120.5
115.1
109.6
105.3
101.6
98.1
95.3
92.2
89.6
87.4
84.8
82.8
80.7
78.7
76.9
74.8
73.4
71.4
69.6
67.8
66.2
64.6
63.2
61.4
59.6
MAG
ANG
84.9
81.4
73.7
66.0
62.0
56.4
52.7
51.2
46.0
47.2
43.4
44.4
43.3
43.8
39.7
41.0
41.4
40.0
41.6
39.9
42.3
39.9
39.3
39.5
40.2
39.7
40.4
40.2
39.5
37.3
MAG
0.967
0.941
0.896
0.833
0.766
0.694
0.632
0.574
0.525
0.484
0.446
0.410
0.381
0.357
0.335
0.316
0.295
0.277
0.265
0.252
0.238
0.232
0.219
0.209
0.197
0.194
0.185
0.181
0.170
0.162
ANG
-8.4
100
200
-17.3
0.0073
0.0137
0.0205
0.0266
0.0319
0.0349
0.0403
0.0402
0.0445
0.0472
0.0476
0.0477
0.0505
0.0509
0.0520
0.0533
0.0540
0.0548
0.0578
0.0601
0.0603
0.0610
0.0641
0.0646
0.0664
0.0678
0.0693
0.0705
0.0715
0.0717
-34.2
-17.1
-25.1
-32.8
-39.1
-44.3
-48.6
-51.7
-54.8
-56.2
-58.4
-59.4
-61.0
-61.9
-62.9
-63.4
-64.0
-65.0
-65.1
-66.1
-66.1
-66.9
-67.2
-67.7
-68.0
-69.7
-71.0
-71.9
-72.9
-74.0
300
-50.1
400
-65.5
500
-78.9
600
-91.5
700
-102.0
-112.1
-120.1
-127.4
-133.7
-140.9
-146.8
-152.1
-156.6
-161.3
-165.3
-169.8
-173.1
-176.4
179.9
177.3
174.4
171.8
169.0
166.5
164.3
161.9
159.6
157.3
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
8.84
8.27
7.79
7.38
6.99
6.63
6.33
6.02
5.75
5.52
5.29
5.10
4.89
4.73
4.55
4.39
4.27
Rev.1, Nov. 2002, page 8 of 12
2SC5820
(VCE = 2 V, IC = 20 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
0.556
0.550
0.537
0.519
0.501
0.485
0.475
0.470
0.462
0.460
0.460
0.458
0.457
0.460
0.457
0.462
0.462
0.466
0.467
0.469
0.474
0.476
0.480
0.483
0.486
0.490
0.497
0.499
0.505
0.506
ANG
MAG
38.68
35.60
31.52
27.37
23.66
20.55
18.10
16.09
14.43
13.12
11.95
11.00
10.20
9.48
ANG
163.4
148.3
135.5
125.0
116.7
110.2
105.3
100.7
97.1
94.1
91.2
88.9
86.4
84.2
82.2
80.0
78.4
76.6
74.8
73.2
71.4
70.0
68.3
66.7
65.0
63.4
62.1
60.8
59.2
57.6
MAG
ANG
88.2
78.3
71.3
63.3
62.0
57.0
54.2
54.1
51.7
53.1
50.4
52.5
51.5
53.3
49.4
50.7
52.0
49.7
51.5
50.1
52.8
50.9
48.6
49.0
49.8
48.6
48.9
49.3
48.0
46.7
MAG
0.937
0.882
0.805
0.716
0.633
0.556
0.495
0.441
0.397
0.362
0.330
0.302
0.280
0.260
0.242
0.227
0.210
0.198
0.187
0.178
0.167
0.161
0.152
0.143
0.135
0.131
0.123
0.122
0.114
0.106
ANG
-11.6
-23.2
-32.9
-41.4
-47.6
-52.3
-55.9
-58.4
-60.8
-61.7
-63.6
-63.5
-64.7
-65.2
-66.3
-65.9
-66.4
-66.8
-67.2
-67.2
-67.3
-68.3
-68.2
-69.2
-69.8
-70.8
-72.9
-74.1
-75.4
-77.2
100
200
-26.3
0.0065
0.0117
0.0174
0.0215
0.0252
0.0276
0.0310
0.0312
0.0352
0.0369
0.0389
0.0397
0.0425
0.0441
0.0452
0.0469
0.0478
0.0496
0.0532
0.0548
0.0572
0.0574
0.0610
0.0616
0.0638
0.0661
0.0699
0.0715
0.0714
0.0713
-50.8
300
-72.0
400
-90.7
500
-105.4
-118.3
-128.1
-137.3
-144.3
-150.4
-155.8
-161.4
-166.3
-170.1
-173.9
-177.4
179.3
175.9
173.3
170.6
167.8
165.5
163.3
161.2
159.0
156.9
155.3
153.1
151.4
149.6
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
8.85
8.31
7.84
7.41
7.02
6.70
6.36
6.09
5.82
5.58
5.37
5.15
4.97
4.78
4.61
4.48
Rev.1, Nov. 2002, page 9 of 12
2SC5820
(VCE = 2 V, IC = 30 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
0.441
0.449
0.455
0.455
0.451
0.450
0.449
0.451
0.449
0.449
0.453
0.455
0.457
0.460
0.460
0.466
0.466
0.471
0.472
0.476
0.480
0.483
0.487
0.489
0.493
0.497
0.504
0.507
0.511
0.515
ANG
MAG
45.76
40.75
34.81
29.32
24.83
21.25
18.53
16.36
14.62
13.25
12.05
11.05
10.23
9.50
ANG
160.6
143.5
129.9
119.4
111.5
105.6
101.1
97.0
93.7
91.1
88.4
86.3
84.0
82.0
80.2
78.1
76.5
74.8
73.2
71.6
69.9
68.5
66.9
65.4
63.8
62.2
60.9
59.6
58.1
56.5
MAG
ANG
84.2
78.8
69.4
63.3
61.5
58.6
55.9
57.8
55.5
57.7
55.5
58.0
56.7
58.5
54.8
55.1
56.5
55.4
56.0
54.4
56.9
55.2
52.3
53.6
53.4
51.6
52.2
52.9
50.9
49.4
MAG
0.913
0.838
0.741
0.641
0.558
0.485
0.428
0.378
0.340
0.308
0.279
0.256
0.236
0.220
0.204
0.190
0.176
0.165
0.157
0.149
0.139
0.134
0.126
0.117
0.110
0.107
0.101
0.099
0.091
0.085
ANG
-13.6
-26.7
-37.1
-45.5
-51.2
-55.6
-58.5
-60.4
-62.8
-63.1
-64.9
-64.1
-65.2
-65.5
-66.2
-65.9
-65.8
-66.4
-66.9
-66.8
-67.3
-67.8
-67.7
-68.2
-68.8
-70.8
-72.8
-73.4
-76.1
-78.0
100
200
-34.8
0.0061
0.0110
0.0153
0.0185
0.0223
0.0238
0.0280
0.0284
0.0321
0.0347
0.0360
0.0364
0.0399
0.0413
0.0438
0.0437
0.0465
0.0481
0.0517
0.0540
0.0560
0.0573
0.0604
0.0617
0.0633
0.0659
0.0690
0.0711
0.0714
0.0717
-65.1
300
-88.7
400
-107.9
-122.1
-133.9
-142.5
-150.6
-156.4
-161.7
-166.3
-171.0
-175.0
-178.3
178.5
175.5
172.7
169.8
167.4
165.0
162.7
160.5
158.7
156.8
154.9
153.0
151.6
149.5
148.0
146.3
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
8.86
8.32
7.84
7.41
7.02
6.69
6.35
6.08
5.81
5.56
5.35
5.14
4.96
4.77
4.59
4.47
Rev.1, Nov. 2002, page 10 of 12
2SC5820
Package Dimensions
As of July, 2002
Unit: mm
2.0 0.2
1.3 0.2
0.65 0.65
+ 0.1
+ 0.1
+ 0.1
0.3
0.3
0.3
0.4
– 0.05
– 0.05
0.16
– 0.06
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.65
0.6
1.25 0.2
Hitachi Code
JEDEC
CMPAK-4(T)
—
JEITA
Mass (reference value)
Conforms
0.006 g
Rev.1, Nov. 2002, page 11 of 12
2SC5820
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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For further information write to:
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.1, Nov. 2002, page 12 of 12
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