TS5A3357_15 [TI]
SINGLE 5-Ω SP3T ANALOG SWITCH 5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER;
| 型号： | TS5A3357_15 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | SINGLE 5-Ω SP3T ANALOG SWITCH 5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER |
| 文件： | 总22页 (文件大小：1073K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
1
FEATURES
APPLICATIONS
•
•
•
Cell Phones
PDAs
Portable Instrumentation
•
Specified Break-Before-Make Switching
•
•
•
•
•
•
•
•
Low ON-State Resistance
High Bandwidth
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
SC-70 (DCU) PACKAGE
(TOP VIEW)
TS5A3357
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
NO0
NO1
NO2
1
2
3
8
7
6
5
V
+
COM
IN1
•
ESD Performance Tested Per JESD 22
–
2000-V Human-Body Model
(A114-B, Class II)
Logic
IN2
GND
4
Control
–
1000-V Charged-Device Model (C101)
FUNCTION TABLE
IN1
L
IN2
L
COM TO NO0
COM TO NO1
COM TO NO2
OFF
ON
OFF
OFF
ON
OFF
OFF
OFF
ON
H
L
L
H
OFF
OFF
H
H
OFF
Summary of Characteristics(1)
DESCRIPTION/ORDERING INFORMATION
Triple 3:1 Multiplexer/
The TS5A3357 is a high-performance, single-pole
triple throw (SP3T) analog switch that is designed to
operate from 1.65 V to 5.5 V. The device offers a low
ON-state resistance and low input/output capacitance
and, thus, causes a very low signal distortion. The
break-before-make feature allows transferring of a
signal from one port to another, with a minimal signal
distortion. This device also offers a low charge
injection which makes this device suitable for
high-performance audio and data acquisition
systems.
Configuration
Demultiplexer
(1 × SP3T)
Number of channels
ON-state resistance (ron
ON-state resistance match (Δron
ON-state resistance flatness (ron(flat)
Turn-on/turn-off time (tON/tOFF
1
5 Ω
)
)
0.1 Ω
)
6.5 Ω
)
6.5 ns/3.7 ns
0.5 ns
Break-before-make time (tBBM
Charge injection (QC)
Bandwidth (BW)
)
3.4 pC
334 MHz
–82 dB at 10 MHz
–62 dB at 10 MHz
0.05%
OFF isolation (OISO
Crosstalk (XTALK
Total harmonic distortion (THD)
)
)
Leakage current (ICOM(OFF)
)
±1 µA
Package option
8-pin DCU (US8)
(1) V+ = 5 V, TA = 25°C
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2004–2007, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ORDERING INFORMATION
TA
PACKAGE(1)(2)
ORDERABLE PART NUMBER
Tape and reel TS5A3357DCUR
TOP-SIDE MARKING(3)
–40°C to 85°C
SOT (SC-70) – DCU
JA9_
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(3) DCU: The actual top-side marking has one additional character that designates the assembly/test site.
ABSOLUTE MINIMUM AND MAXIMUM RATINGS(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
V+
Supply voltage range(3)
Analog voltage range(3)(4)(5)
Analog port diode current
On-state switch current
–0.5
6.5
V
VNO
VCOM
–0.5
–50
V+ + 0.5
50
V
IK
VNO, VCOM < 0 or VNO, VCOM > V+
VNO, VCOM = 0 to V+
mA
mA
INO
ICOM
–100
100
VI
Digital input voltage range(3)(4)
Digital input clamp current
–0.5
–50
6.5
V
IIK
VI < 0
mA
mA
mA
°C
I+
Continuous current through V+
Continuous current through GND
Storage temperature range
100
100
150
IGND
Tstg
–100
–65
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
PACKAGE THERMAL IMPEDANCE
MAX
UNIT
θJA
Package thermal impedance(1)
165
°C/W
(1) The package thermal impedance is calculated in accordance with JESD 51-7.
2
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Copyright © 2004–2007, Texas Instruments Incorporated
Product Folder Link(s): TS5A3357
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY(1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal range VCOM, VNO
0
V+
15
V
0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
Peak ON resistance
rpeak
Full
4.5 V
Ω
VNO = 0,
ICOM = 30 mA
25°C
Full
5
6
7
7
7
VNO = 2.4 V,
ICOM = –30 mA
25°C
Full
12
12
15
15
Switch ON,
See Figure 13
ON-state resistance
ron
4.5 V
4.5 V
Ω
Ω
VNO = 4.5 V,
ICOM = –30 mA
25°C
Full
ON-state resistance
match between
channels
VNO = 3.15 V,
ICOM = –30 mA,
Switch ON,
See Figure 13
Δron
25°C
0.1
6.5
ON-state
resistance flatness
0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
ron(flat)
25°C
5 V
Ω
25°C
Full
–0.1
–1
0.1
1
NO
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
INO(OFF)
5.5 V
µA
OFF leakage current
25°C
Full
–0.1
–1
0.1
1
COM
OFF leakage current
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
ICOM(OFF)
0
µA
µA
µA
25°C
Full
–0.1
–1
0.1
1
NO
VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 14
INO(ON)
5.5 V
5.5 V
ON leakage current
25°C
Full
–0.1
–1
0.1
1
COM
ON leakage current
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
ICOM(ON)
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
V
+ × 0.7
5.5
+ × 0.3
0.1
V
V
0
V
25°C
Full
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
5.5 V
µA
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2004–2007, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Link(s): TS5A3357
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
5 V
1.5
1.5
0.8
0.8
0.5
0.5
6.5
ns
7
VNO = V+ or GND, CL = 50 pF,
Turn-on time
Turn-off time
tON
tOFF
tBBM
RL = 500 Ω,
See Figure 16
Full 4.5 V to 5.5 V
25°C 5 V
Full 4.5 V to 5.5 V
25°C 5 V
Full 4.5 V to 5.5 V
3.7
ns
7
VNO = V+ or GND, CL = 50 pF,
RL = 500 Ω,
See Figure 16
Break-before-
make time
VNO = V+,
CL = 50 pF,
ns
RL = 50 Ω,
See Figure 17
Charge
injection
VGEN = 0,
CL = 0.1 nF,
QC
See Figure 21
See Figure 15
See Figure 15
See Figure 15
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
3.4
4.5
pC
pF
pF
pF
NO
VNO = V+ or GND,
Switch OFF,
CNO(OFF)
CCOM(OFF)
CNO(ON)
OFF capacitance
COM
OFF capacitance
VNO = V+ or GND,
Switch OFF,
10.5
17
NO
VNO = V+ or GND,
Switch ON,
ON capacitance
VCOM = V+ or
CCOM(ON) GND,
Switch ON,
COM
ON capacitance
See Figure 15
25°C
25°C
5 V
5 V
17
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 15
See Figure 18
3
334
–82
–62
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
BW
25°C 4.5 V to 5.5 V
25°C 4.5 V to 5.5 V
25°C 4.5 V to 5.5 V
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
OFF isolation
OISO
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
Crosstalk
dB
Supply
25°C
5.5 V
Full
1
µA
10
Positive supply
current
Switch ON or
OFF
I+
VI = V+ or GND,
4
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Copyright © 2004–2007, Texas Instruments Incorporated
Product Folder Link(s): TS5A3357
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal range VCOM, VNO
0
V+
25
V
0 ≤ VNO ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
Peak ON resistance
ON-state resistance
rpeak
Full
3 V
3 V
Ω
VNO = 0 V,
ICOM = 24 mA
25°C
Full
6.5
9
9
9
Switch ON,
See Figure 13
ron
Ω
Ω
VNO = 3 V,
ICOM = –24 mA
25°C
Full
20
20
ON-state resistance
match between
channels
VNO = 2.1 V,
ICOM = –24 mA,
Switch ON,
See Figure 13
Δron
25°C
3 V
0.1
ON-state
resistance flatness
0 ≤ VNO ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
ron(flat)
25°C
3.3 V
3.6 V
13.5
Ω
25°C
Full
–0.1
–1
0.1
1
NO
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
INO(OFF)
µA
OFF leakage current
25°C
Full
–0.1
–1
0.1
1
COM
OFF leakage current
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
ICOM(OFF)
3.6 V
3.6 V
3.6 V
µA
µA
µA
25°C
Full
–0.1
–1
0.1
1
NO
VNO = 0 to V+,
VCOM = V+ to 0,
Switch ON,
See Figure 14
INO(ON)
ON leakage current
25°C
Full
–0.1
–1
0.1
1
COM
ON leakage current
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
ICOM(ON)
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
V
+ × 0.7
5.5
+ × 0.3
0.1
V
V
0
V
25°C
Full
–1
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
3.6 V
µA
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2004–2007, Texas Instruments Incorporated
Submit Documentation Feedback
5
Product Folder Link(s): TS5A3357
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
VNO = V+ or
GND,
RL = 500 Ω,
25°C
Full
3.3 V
3 V to 3.6 V
3.3 V
2
2
9.5
CL = 50 pF,
See Figure 16
Turn-on time
Turn-off time
tON
ns
11
VNO = V+ or
GND,
RL = 500 Ω,
25°C
Full
1.3
1.5
5.1
CL = 50 pF,
See Figure 16
tOFF
ns
3 V to 3.6 V
5.5
25°C
3.3 V
0.5
0.5
Break-before-
make time
VNO = V+,
RL = 50 Ω,
CL = 50 pF,
See Figure 17
tBBM
QC
ns
Full
3 V to 3.6 V
Charge
injection
VGEN = 0,
CL = 0.1 nF,
See Figure 21
See Figure 15
25°C
3.3 V
1.75
4.5
pC
VNO = V+ or
CNO(OFF) GND,
Switch OFF,
NO
25°C
3.3 V
pF
pF
pF
pF
OFF capacitance
VNO = V+ or
CCOM(OFF) GND,
COM
OFF capacitance
See Figure 15
See Figure 15
See Figure 15
25°C
25°C
3.3 V
3.3 V
10.5
17
Switch OFF,
VNO = V+ or
CNO(ON) GND,
NO
ON capacitance
Switch ON,
VCOM = V+ or
CCOM(ON) GND,
COM
ON capacitance
25°C
25°C
3.3 V
3.3 V
17
Switch ON,
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 15
See Figure 18
3
327
–82
–62
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
BW
25°C 3 V to 3.6 V
25°C 3 V to 3.6 V
25°C 3 V to 3.6 V
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
OFF isolation
OISO
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
Crosstalk
dB
Supply
25°C
3.6 V
Full
1
µA
10
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
6
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Copyright © 2004–2007, Texas Instruments Incorporated
Product Folder Link(s): TS5A3357
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal
range
VCOM, VNO
0
V+
50
V
Peak ON
resistance
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
rpeak
Full
2.3 V
2.3 V
Ω
VNO = 0 V,
ICOM = 8 mA
25°C
Full
8
12
12
30
30
ON-state
resistance
Switch ON,
See Figure 13
ron
Ω
Ω
VNO = 2.3 V,
ICOM = –8 mA
25°C
Full
11
ON-state
resistance
match between
channels
VNO = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 13
Δron
25°C
2.3 V
0.3
39
ON-state
resistance flatness
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
ron(flat)
25°C
2.5 V
2.7 V
Ω
NO
OFF leakage
current
25°C
Full
–0.1
–1
0.1
1
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
INO(OFF)
µA
COM
OFF leakage
current
25°C
Full
–0.1
–1
0.1
1
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
ICOM(OFF)
2.7 V
2.7 V
2.7 V
µA
µA
µA
NO
ON leakage
current
25°C
Full
–0.1
–1
0.1
1
VNO = 0 to V+,
VCOM = V+ to 0,
Switch ON,
See Figure 14
INO(ON)
COM
ON leakage
current
25°C
Full
–0.1
–1
0.1
1
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
ICOM(ON)
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
V
+ × 0.75
5.5
+ × 0.25
0.1
V
V
0
V
25°C
Full
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
2.7 V
µA
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2004–2007, Texas Instruments Incorporated
Submit Documentation Feedback
7
Product Folder Link(s): TS5A3357
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
VNO = V+ or
GND,
RL = 500 Ω,
25°C
Full
2.5 V
3
3
2
2
15
CL = 50 pF,
See Figure 16
Turn-on time
Turn-off time
tON
ns
2.3 V to 2.7 V
2.5 V
16.5
VNO = V+ or
GND,
RL = 500 Ω,
25°C
Full
7.2
CL = 50 pF,
See Figure 16
tOFF
ns
2.3 V to 2.7 V
7.8
25°C
2.5 V
0.5
0.5
Break-before-
make time
VNO = V+,
RL = 50 Ω,
CL = 50 pF,
See Figure 17
tBBM
QC
ns
Full
2.3 V to 2.7 V
Charge
injection
VGEN = 0,
CL = 0.1 nF,
See Figure 21
See Figure 15
25°C
2.5 V
1.15
4.5
pC
VNO = V+ or
CNO(OFF) GND,
Switch OFF,
NO
25°C
2.5 V
pF
pF
pF
pF
OFF capacitance
VNO = V+ or
CCOM(OFF) GND,
COM
OFF capacitance
See Figure 15
See Figure 15
See Figure 15
25°C
25°C
2.5 V
2.5 V
10.5
17
Switch OFF,
VNO = V+ or
CNO(ON) GND,
NO
ON capacitance
Switch ON,
VCOM = V+ or
CCOM(ON) GND,
COM
ON capacitance
25°C
25°C
2.5 V
2.5 V
17
Switch ON,
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 15
See Figure 18
3
320
–81
–61
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
BW
25°C 2.3 V to 2.7 V
25°C 2.3 V to 2.7 V
25°C 2.3 V to 2.7 V
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
OFF isolation
OISO
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
Crosstalk
dB
Supply
25°C
2.7 V
Full
1
µA
10
Positive supply
current
Switch ON or
OFF
I+
VI = V+ or GND,
8
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Copyright © 2004–2007, Texas Instruments Incorporated
Product Folder Link(s): TS5A3357
TS5A3357
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY(1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal
range
VCOM, VNO
0
V+
V
Peak ON
resistance
0 ≤ VNO ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 13
rpeak
Full
1.65 V
1.65 V
150
Ω
VNO = 0 V,
ICOM = 4 mA
25°C
Full
10
17
20
20
50
50
ON-state
resistance
Switch ON,
See Figure 13
ron
Ω
Ω
VNO = 1.8 V,
ICOM = –4 mA
25°C
Full
ON-state
resistance
match between
channels
VNO = 1.15 V,
ICOM = –4 mA,
Switch ON,
See Figure 13
Δron
25°C
1.65 V
0.3
ON-state
resistance flatness
0 ≤ VNO ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 13
ron(flat)
25°C
1.8 V
140
Ω
NO
OFF leakage
current
25°C
Full
–0.1
–1
0.1
1
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
INO(OFF)
1.95 V
µA
COM
OFF leakage
current
25°C
Full
–0.1
–1
0.1
1
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
ICOM(OFF)
1.95 V
1.95 V
1.95 V
µA
µA
µA
NO
ON leakage
current
25°C
Full
–0.1
–1
0.1
1
VNO = 0 to V+,
VCOM = V+ to 0,
Switch ON,
See Figure 14
INO(ON)
COM
ON leakage
current
25°C
Full
–0.1
–1
0.1
1
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
ICOM(ON)
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
V
+ × 0.75
5.5
+ × 0.25
0.1
V
V
0
V
25°C
Full
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
1.95 V
µA
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
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SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
Full
1.8 V
5
5
32
VNO = V+ or GND, CL = 50 pF,
Turn-on time
Turn-off time
tON
tOFF
tBBM
ns
34
1.65 V to
1.95 V
RL = 500 Ω,
See Figure 16
25°C
Full
1.8 V
3
14
VNO = V+ or GND, CL = 50 pF,
ns
1.65 V to
1.95 V
RL = 500 Ω,
See Figure 16
3
14.5
25°C
Full
1.8 V
0.5
0.5
Break-before-
make time
VNO = V+,
CL = 50 pF,
ns
1.65 V to
1.95 V
RL = 50 Ω,
See Figure 17
Charge
injection
VGEN = 0,
CL = 0.1 nF,
QC
CNO(OFF)
CCOM(OFF)
CNO(ON)
CCOM(ON)
CI
See Figure 21
See Figure 15
See Figure 15
See Figure 15
See Figure 15
See Figure 15
See Figure 18
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
0.3
4.5
10.5
17
pC
pF
NO
VNO = V+ or GND,
Switch OFF,
OFF capacitance
COM
OFF capacitance
VNO = V+ or GND,
Switch OFF,
pF
NO
VNO = V+ or GND,
Switch ON,
pF
ON capacitance
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
17
pF
Digital input
capacitance
VI = V+ or GND,
3
pF
RL = 50 Ω,
Switch ON,
1.65 V to
1.95 V
Bandwidth
BW
341
–81
–61
MHz
dB
dB
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
1.65 V to
1.95 V
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
1.65 V to
1.95 V
Crosstalk
XTALK
Supply
25°C
1
µA
10
Positive supply
current
Switch ON or
OFF
I+
VI = V+ or GND,
1.95 V
Full
10
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SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
TYPICAL PERFORMANCE
°C
°C
°C
°C
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 3 V)
°C
°C
°C
Figure 3. ron vs VCOM (V+ = 4.5 V)
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
Figure 5. Charge Injection (QC) vs VCOM
Figure 6. tON and tOFF vs V+
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5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
TYPICAL PERFORMANCE (continued)
°C
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
Figure 8. Logic-Level Threshold vs V+
Figure 9. Frequency Response (V+ = 3 V)
Figure 10. OFF Isolation and Crosstalk vs Frequency
(V+ = 3 V)
Figure 11. Total Harmonic Distortion vs Frequency
(V+ = 5 V)
Figure 12. Power-Supply Current vs Temperature
(V+ = 5 V)
12
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SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
PIN DESCRIPTION
PIN NO.
NAME
DESCRIPTION
1
2
3
4
5
6
7
8
NO0 Normally open
NO1 Normally open
NO2 Normally open
GND Digital ground
IN2
IN1
Digital control to connect COM to NO
Digital control to connect COM to NO
COM Common
V+ Power supply
PARAMETER DESCRIPTION
SYMBOL
VCOM
VNO
DESCRIPTION
Voltage at COM
Voltage at NO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
Peak on-state resistance over a specified voltage range
rpeak
Δron
Difference of ron between channels in a specific device
ron(flat)
INO(OFF)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
ICOM(ON)
ICOM(OFF)
VIH
Leakage current measured at the COM port during the power-down condition, V+ = 0
Minimum input voltage for logic high for the control input (IN)
Maximum input voltage for logic low for the control input (IN)
Voltage at the control input (IN)
VIL
VI
IIH, IIL
Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tON
tOFF
tBBM
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
QC
CNO(OFF)
CNO(ON)
CCOM(ON)
CCOM(OFF)
CI
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
XTALK
BW
I+
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Static power-supply current with the control (IN) pin at V+ or GND
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www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
PARAMETER MEASUREMENT INFORMATION
Ω
Figure 13. ON-State Resistance (ron)
OFF-State Leakage Current
ON-State Leakage Current
Figure 14. ON- and OFF-State Leakage Current (ICOM(ON), ICOM(OFF), INO(ON), INO(OFF)
)
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
Figure 15. Capacitance (CI, CCOM(ON), CNO(OFF), CCOM(OFF), CNO(ON)
)
14
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SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
PARAMETER MEASUREMENT INFORMATION (continued)
x
V
V
OH
OL
x
Ω
Ω
Ω
Ω
V
+ 0.3 V
OH
x
x
V
OH
V
– 0.3 V
OH
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 16. Turn-On (tON) and Turn-Off Time (tOFF
)
t = < 2.5 ns
r
t = < 2.5 ns
f
V
OH
Ω
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 17. Break-Before-Make Time (tBBM
)
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SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
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SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
PARAMETER MEASUREMENT INFORMATION (continued)
Ω
Channel ON: NO0 to COM
Network Analyzer Setup
Ω
Source Power = 0 dBM
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
Channel OFF: NO0 to COM
Network Analyzer Setup
Ω
Ω
Source Power = 0 dBM
DC Bias = 350 mV
Ω
Figure 19. OFF Isolation (OISO
)
Channel OFF: NO0 to COM
Channel ON: NO0–NO1 to
COM
Ω
Network Analyzer Setup
Ω
Source Power = 0 dBM
DC Bias = 350 mV
Figure 20. Crosstalk (XTALK
)
16
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www.ti.com
SCDS177A–OCTOBER 2004–REVISED DECEMBER 2007
PARAMETER MEASUREMENT INFORMATION (continued)
Δ
x Δ
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 21. Charge Injection (QC)
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PACKAGE MATERIALS INFORMATION
www.ti.com
19-Aug-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS5A3357DCUR
TS5A3357DCUR
TS5A3357DCURG4
TS5A3357DCUT
VSSOP
VSSOP
VSSOP
VSSOP
DCU
DCU
DCU
DCU
8
8
8
8
3000
3000
3000
250
180.0
178.0
180.0
178.0
8.4
9.5
8.4
9.5
2.25
2.25
2.25
2.25
3.35
3.35
3.35
3.35
1.05
1.05
1.05
1.05
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
Q3
Q3
Q3
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Aug-2015
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TS5A3357DCUR
TS5A3357DCUR
TS5A3357DCURG4
TS5A3357DCUT
VSSOP
VSSOP
VSSOP
VSSOP
DCU
DCU
DCU
DCU
8
8
8
8
3000
3000
3000
250
202.0
202.0
202.0
202.0
201.0
201.0
201.0
201.0
28.0
28.0
28.0
28.0
Pack Materials-Page 2
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