TS5A3359DCUTE4 [TI]
1-Ω SP3T ANALOG SWITCH 5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER; 1 - Ω SP3T模拟开关5 -V / 3.3 -V单通道3 ： 1复用器/解复用器
| 型号： | TS5A3359DCUTE4 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1-Ω SP3T ANALOG SWITCH 5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER |
| 文件： | 总26页 (文件大小：884K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
1
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
Cell Phones
PDAs
2
•
Isolation in Power-Down Mode, V+ = 0
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
•
•
•
•
•
•
•
•
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
•
ESD Performance Tested Per JESD 22
–
2000-V Human-Body Model
(A114-B, Class II)
–
1000-V Charged-Device Model (C101)
FUNCTION TABLE
COM TO NO,
NO TO COM
IN2
IN1
L
L
L
H
L
OFF
COM = NO0
COM = NO1
COM = NO2
H
H
H
DESCRIPTION/ORDERING INFORMATION
The TS5A3359 is a single-pole triple-throw (SP3T) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and excellent ON-state resistance matching with the
break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel to
another. The device has an excellent total harmonic distortion (THD) performance and consumes very low
power. These features make this device suitable for portable audio applications.
ORDERING INFORMATION
TA
PACKAGE(1)(2)
ORDERABLE PART NUMBER
Tape and reel TS5A3359YZPR
Tape and reel TS5A3359DCUR
TOP-SIDE MARKING(3)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP
(Pb-free)
_ _ _J9_
JAL_
–40°C to 85°C
VSSOP – DCU
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(3) DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NanoFree is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2008, Texas Instruments Incorporated
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
Summary of Characteristics(1)
Triple 3:1 Multiplexer/
Demultiplexer (1 × SP3T)
Configuration
Number of channels
1
1.1 Ω
ON-state resistance (ron
)
ON-state resistance match (Δron
ON-state resistance flatness (ron(flat)
Turn-on/turn-off time (tON/tOFF
)
0.1 Ω
)
0.15 Ω
)
40 ns/35 ns
1 ns
Break-before-make time (tBBM
Charge injection (QC)
Bandwidth (BW)
)
40 pC
100 MHz
–65 dB at 10 MHz
–66 dB at 10 MHz
0.01%
OFF isolation (OISO
Crosstalk (XTALK
)
)
Total harmonic distortion (THD)
Leakage current (ICOM(OFF)/INO(OFF)
Power supply current (I+)
Package options
)
±20 µA
0.1 µA
8-pin DCU or YZP
(1) V+ = 5 V, TA = 25°C
ABSOLUTE MINIMUM AND MAXIMUM RATINGS(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
6.5
UNIT
V+
Supply voltage range(3)
Analog voltage range(3)(4)(5)
Analog port diode current
–0.5
V
VNO
VCOM
–0.5
V+ + 0.5
V
IK
VNO, VCOM < 0
–50
–200
–400
–0.5
–50
mA
INO
ICOM
200
400
6.5
On-state switch current
VNO, VCOM = 0 to V+
mA
VI
Digital input voltage range(3)(4)
Digital input clamp current
V
IIK
VI < 0
mA
mA
mA
°C
I+
Continuous current through V+
Continuous current through GND
Storage temperature range
100
100
150
IGND
Tstg
–100
–65
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
PACKAGE THERMAL IMPEDANCE
UNIT
DCU package
YZP package
227
140
θJA
Package thermal impedance(1)
°C/W
(1) The package thermal impedance is calculated in accordance with JESD 51-7.
2
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Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s): TS5A3359
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY(1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VCOM, VNO
rpeak
0
V+
V
25°C
Full
0.8
0.7
0.1
1.1
1.5
0.9
1.1
0.1
Peak ON
resistance
0 ≤ (VNO) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 19
4.5 V
4.5 V
Ω
25°C
Full
ON-state
resistance
VNO = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 19
ron
Ω
Ω
ON-state
resistance
match
between
channels
25°C
VNO = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 19
Δron
4.5 V
4.5 V
Full
0.1
0 ≤ (VNO) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 19
25°C
0.15
ON-state
resistance
flatness
ron(flat)
Ω
VNO = 1 V, 1.5 V, 2.5
V,
ICOM = –100 mA,
25°C
0.1 0.25
0.25
Switch ON,
See Figure 19
Full
25°C
Full
–20
–150
–1
5
0.8
5
20
150
1
VNO = 1 V or 4.5 V,
VCOM = 1 V to 4.5 V, See Figure 20
Switch OFF,
INO(OFF)
5.5 V
0 V
nA
NO
OFF leakage
current
25°C
Full
VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 20
INO(PWROFF)
µA
–25
–30
25
30
NO
ON leakage
current
25°C
VNO = 1 V or 4.5 V,
VCOM = Open,
Switch ON,
See Figure 20
INO(ON)
5.5 V
nA
Full
–220
220
25°C
Full
–25
–250
–8
8
0.1
5
25
250
8
VNO = 4.5 V or 1 V,
VCOM = 1 V or 4.5 V, See Figure 20
Switch OFF,
ICOM(OFF)
5.5 V
0 V
nA
COM
OFF leakage
current
25°C
Full
VCOM = 0 to 5.5 V,
VNO = 5.5 V to 0,
Switch OFF,
See Figure 20
ICOM(PWROFF)
µA
–50
–30
50
30
COM
ON leakage
current
25°C
VNO = Open,
VCOM = 1 V or 4.5 V, See Figure 20
Switch ON,
ICOM(ON)
5.5 V
nA
Full
–220
220
Digital Control Inputs (IN1, IN2)(2)
Input logic
VIH
Full
2.4
5.5
V
V
high
Input logic low
VIL
Full
25°C
Full
0
–2
0.8
2
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
5.5 V
µA
–20
20
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2005–2008, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Link(s): TS5A3359
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
5 V
1
1
2.5
6
21
23.5
10.5
12
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
Turn-on time
Turn-off time
tON
ns
ns
4.5 V to 5.5 V
5 V
25°C
Full
1
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
tOFF
4.5 V to 5.5 V
5 V
1
25°C
Full
0.5
0.5
8.5
18
Break-before-
make time
VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 24
tBBM
QC
ns
4.5 V to 5.5 V
23
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 28
25°C
5 V
20
18
pC
NO
OFF
capacitance
VNO = V+ or GND,
Switch OFF,
CNO(OFF)
CCOM(OFF)
CNO(ON)
See Figure 22
See Figure 22
See Figure 22
See Figure 22
25°C
5 V
pF
pF
pF
pF
COM
OFF
capacitance
VCOM = V+ or GND,
Switch OFF,
25°C
25°C
25°C
2.5 V
5 V
54
78
78
NO
ON
capacitance
VNO = V+ or GND,
Switch ON,
COM
ON
capacitance
VCOM = V+or GND,
Switch ON,
CCOM(ON)
5 V
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 22
See Figure 25
25°C
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
5 V
2.5
75
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 MHz ,
Switch OFF,
See Figure 26
OISO
XTALK
THD
–64
RL = 50 Ω,
f = 1 MHz ,
Switch ON,
See Figure 27
–64
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 29
0.005
%
Supply
25°C
16
50
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
5.5 V
nA
Full
1200
4
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Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s): TS5A3359
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal
range
VCOM, VNO
rpeak
0
V+
V
25°C
Full
1.3
1.2
0.1
1.6
2
Peak ON
resistance
0 ≤ (VNO) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 19
3 V
3 V
Ω
25°C
Full
1.6
1.8
0.15
ON-state
resistance
VNO = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 19
ron
Ω
Ω
ON-state
25°C
resistance
match between
channels
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 19
Δron
3 V
3 V
Full
0.15
0 ≤ (VNO) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 19
25°C
0.2
0.2
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
0.35
0.35
15
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 19
25°C
Full
–15
–30
–1
3
0.2
3
VNO = 1 V or 3 V,
VCOM = 1 V to 3 V,
Switch OFF,
See Figure 20
INO(OFF)
3.6 V
0 V
nA
NO
OFF leakage
current
30
25°C
Full
1
VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 20
INO(PWROFF)
µA
–10
–15
10
NO
ON leakage
current
25°C
15
VNO = 1 V or 3 V,
VCOM = Open,
Switch ON,
See Figure 20
INO(ON)
3.6 V
3.6 V
nA
nA
Full
–40
–15
40
15
VNO = 0 V to 3.6 V,
VCOM = 1 V or
VNO = 3.6 V to 0,
VCOM = 3 V,
25°C
3
Switch OFF,
See Figure 20
ICOM(OFF)
COM
OFF leakage
current
Full
–75
75
25°C
Full
–1
–20
–15
0.2
4
1
20
15
VCOM = 0 to 3.6 V,
VNO = 3.6 V to 0,
Switch OFF,
See Figure 20
ICOM(PWROFF)
0 V
µA
COM
ON leakage
current
25°C
VNO = Open,
VCOM = 1 V or 3 V,
Switch ON,
See Figure 20
ICOM(ON)
3.6 V
nA
Full
–40
40
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
0
5.5
0.8
2
V
V
25°C
Full
–2
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
3.6 V
nA
–20
20
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2005–2008, Texas Instruments Incorporated
Submit Documentation Feedback
5
Product Folder Link(s): TS5A3359
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
16
6
MAX UNIT
25°C
Full
3.3 V
3 V to 3.6 V
3.3 V
1
1
30.5
ns
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
Turn-on time
Turn-off time
tON
34
25°C
Full
1
11.5
ns
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
tOFF
3 V to 3.6 V
3.3 V
1
12.5
25°C
Full
0.5
0.5
13
26
ns
30
Break-before-
make time
VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 24
tBBM
QC
3 V to 3.6 V
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 28
25°C
3.3 V
12
18
pC
NO
OFF
capacitance
VNO = V+ or GND,
Switch OFF,
CNO(OFF)
CCOM(OFF)
CNO(ON)
See Figure 22
See Figure 22
See Figure 22
See Figure 22
25°C
3.3 V
pF
COM
OFF
capacitance
VCOM = V+ or GND,
Switch OFF,
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
55
78
78
pF
pF
pF
NO
ON
capacitance
VNO = V+ or GND,
Switch ON,
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 22
See Figure 25
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
2.5
73
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 26
OISO
XTALK
THD
–64
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 27
–64
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 29
0.010
%
Supply
25°C
2
20
nA
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
3.6 V
Full
350
6
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Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s): TS5A3359
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VCOM, VNO
rpeak
0
V+
V
25°C
Full
1.8
1.5
2.5
2.7
2
Peak ON
resistance
0 ≤ (VNO) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 19
2.3 V
2.3 V
Ω
25°C
Full
ON-state
resistance
VNO = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 19
ron
Ω
Ω
2.4
0.2
ON-state
25°C
resistance
match between
channels
VNO = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 19
Δron
2.3 V
2.3 V
Full
0.2
0 ≤ (VNO) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 19
25°C
0.6
0.6
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
1
1
VNO = 0.8 V, 1.8 V
ICOM = –8 mA,
Switch ON,
See Figure 19
25°C
Full
–15
–30
–1
3
0.1
3
15
30
1
VNO = 0.5 V or 2.3 V,
VCOM = 0.5 V to 2.3 V, See Figure 20
Switch OFF,
INO(OFF)
2.7 V
0 V
nA
NO
OFF leakage
current
25°C
Full
VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 20
INO(PWROFF)
µA
–10
–15
10
15
NO
ON leakage
current
25°C
VNO = 0.5 V or 2.3 V,
VCOM = Open,
Switch ON,
See Figure 20
INO(ON)
2.7 V
nA
Full
–35
35
25°C
Full
–15
–60
–1
3
0.1
3.5
15
60
1
VNO = 0.3 V to 2.3 V,
VCOM = 0.5 V or 2.3 V, See Figure 20
Switch OFF,
ICOM(OFF)
2.7 V
0 V
nA
COM
OFF leakage
current
25°C
Full
VCOM = 0 to 2.7 V,
VNO = 2.7 V to 0,
Switch OFF,
See Figure 20
ICOM(PWROFF)
µA
–10
–15
10
15
COM
ON leakage
current
25°C
VNO = Open,
VCOM = 0.5 V or 2.2 V, See Figure 20
Switch ON,
ICOM(ON)
2.7 V
nA
Full
–40
40
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.8
0
5.5
0.6
1
V
V
25°C
Full
1
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
2.7 V
nA
10
10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2005–2008, Texas Instruments Incorporated
Submit Documentation Feedback
7
Product Folder Link(s): TS5A3359
TS5A3359
1-Ω SP3T ANALOG SWITCH
5-V/3.3-V SINGLE-CHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
www.ti.com
SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
2.5 V
2.3 V to 2.7 V
2.5 V
2
2
4.5
8.5
43
47.5
11
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
Turn-on time
Turn-off time
tON
ns
ns
25°C
Full
2
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
tOFF
2.3 V to 2.7 V
2.5 V
2
12.5
25°C
Full
0.5
0.5
18.5 38.5
43
Break-before-
make time
VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 24
tBBM
QC
ns
2.3 V to 2.7 V
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 28
25°C
2.5 V
8
pC
NO
OFF
capacitance
VNO = V+ or GND,
Switch OFF,
CNO(OFF)
CCOM(OFF)
CNO(ON)
See Figure 22
See Figure 22
See Figure 22
See Figure 22
25°C
2.5 V
18.5
pF
pF
pF
pF
COM
OFF
capacitance
VCOM = V+ or GND,
Switch OFF,
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
55
78
78
NO
ON
capacitance
VNO = V+ or GND,
Switch ON,
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 22
See Figure 25
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
3
73
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 26
OISO
XTALK
THD
–64
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 27
–64
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 29
0.030
%
Supply
25°C
1
10
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
nA
Full
250
8
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY(1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal
range
VCOM, VNO
rpeak
0
V+
V
25°C
Full
5
2
Peak ON
resistance
0 ≤ (VNO) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 19
1.65 V
1.65 V
Ω
30
2.5
3.5
0.4
25°C
Full
ON-state
resistance
VNO = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 19
ron
Ω
Ω
ON-state
resistance
match
between
channels
25°C
0.15
VNO = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 19
Δron
1.65 V
1.65 V
Full
0.4
0 ≤ (VNO) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 19
25°C
5
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
4.5
5
VNO = 0.6 V, 1.5 V
ICOM = –2 mA,
Switch ON,
See Figure 19
25°C
Full
–15
–30
–1
3
15
30
1
VNO =0.3 V or 1.65 V,
VCOM = 0.3 V to 1.65 V, See Figure 20
Switch OFF,
INO(OFF)
1.95 V
0 V
nA
NO
OFF leakage
current
25°C
Full
0.1
3
VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 20
INO(PWROFF)
µA
–15
–15
15
15
NO
ON leakage
current
25°C
VNO =0.3 V or 1.65 V,
VCOM = Open,
Switch ON,
See Figure 20
INO(ON)
1.95 V
nA
Full
–30
30
25°C
Full
–15
–50
–1
3
0.1
3
15
50
1
VNO = 0.3 V to 1.65 V,
VCOM =0.3 V or 1.65 V,
Switch OFF,
See Figure 20
ICOM(OFF)
1.95 V
0 V
nA
COM
OFF leakage
current
25°C
Full
ICOM(PWROF VCOM = 0 to 1.95 V,
Switch OFF,
See Figure 20
µA
VNO = 1.95 V to 0,
F)
–10
–15
10
15
COM
ON leakage
current
25°C
VNO = Open,
ICOM(ON)
Switch ON,
1.95 V
nA
VCOM = 0.3 V or 1.65 V, See Figure 20
Full
–30
30
Digital Control Inputs (IN1, IN2)(2)
Input logic
VIH
Full
1.5
5.5
V
V
high
Input logic low
VIL
Full
25°C
Full
0
–2
0.6
2
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
1.95 V
nA
–20
20
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
38.5
8.5
MAX UNIT
25°C
1.8 V
3
3
2
2
1
1
85
ns
90
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
Turn-on time
Turn-off time
tON
Full 1.65 V to 1.95 V
25°C 1.8 V
Full 1.65 V to 1.95 V
25°C 1.8 V
Full 1.65 V to 1.95 V
16
ns
18
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 23
tOFF
33
75
ns
80
Break-before-
make time
VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 24
tBBM
QC
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 28
25°C
1.8 V
5
pC
NO
OFF
capacitance
VNO = V+ or GND,
Switch OFF,
CNO(OFF)
CCOM(OFF)
CNO(ON)
See Figure 22
See Figure 22
See Figure 22
See Figure 22
25°C
1.8 V
18.5
pF
COM
OFF
capacitance
VCOM = V+ or GND,
Switch OFF,
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
55
78
78
pF
pF
pF
NO
ON
capacitance
VNO = V+ or GND,
Switch ON,
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 22
See Figure 25
25°C
25°C
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
3
73
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 M Hz ,
Switch OFF,
See Figure 26
OISO
XTALK
THD
–64
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 27
–64
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 29
0.080
%
Supply
25°C
1
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
1.95 V
nA
Full
200
10
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
TYPICAL PERFORMANCE
1.4
T
A
= 85°C
T
A
= 25
°C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
A
= –40°C
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
V
COM
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 3.3 V)
°C
°C
°C
°C
°C
°C
Figure 3. ron vs VCOM (V+ = 5 V)
Figure 4. Leakage Current vs Temperature
°C
°C
°C
°C
°C
°C
Figure 5. Leakage Current vs Temperature
Figure 6. Leakage Current vs Temperature
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
TYPICAL PERFORMANCE (continued)
°C
°C
°C
Figure 7. Leakage Current vs Temperature
Figure 8. Charge Injection (QC) vs VCOM
(°C)
Figure 9. tON and tOFF vs Supply Voltage
Figure 10. tON and tOFF vs Temperature
Figure 11. Logic-Level Threshold vs V+
Figure 12. Bandwidth (V+ = 5 V)
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
TYPICAL PERFORMANCE (continued)
Figure 13. OFF Isolation vs Crosstalk
Figure 14. Total Harmonic Distortion vs Frequency
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
(°C)
100 k
1 M
10 M
Frequency (Hz)
Figure 15. Power-Supply Current vs Temperature (V+ = 5)
Figure 16. COM Port to NO2 PSRR,
IN1 = VCC, IN2 = VCC (VCC = 5 V)
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–100
100 k
1 M
10 M
100 k
1 M
10 M
Frequency (Hz)
Frequency (Hz)
Figure 17. COM Port to NO0 PSRR,
IN1 = VCC, IN2 = VCC (VCC = 5 V)
Figure 18. COM Port Hi-Z PSRR,
IN1 = 0 V, IN2 = 0 V (VCC = 5 V)
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
PIN DESCRIPTION
PIN NO.
NAME
DESCRIPTION
1
2
3
4
5
6
7
8
NO0 Normally open
NO1 Normally open
NO2 Normally open
GND Digital ground
IN2
IN1
Digital control to connect COM to NO
Digital control to connect COM to NO
COM Common
V+ Power supply
PARAMETER DESCRIPTION
SYMBOL
VCOM
DESCRIPTION
Voltage at COM
Voltage at NO
VNO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
Peak on-state resistance over a specified voltage range
rpeak
Δron
Difference of ron between channels in a specific device
ron(flat)
INO(OFF)
INO(PWROFF)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NO port during the power-down condition, V+ = 0.
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
ICOM(ON)
ICOM(OFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
Leakage current measured at the COM port during the power-down condition, V+ = 0.
Minimum input voltage for logic high for the control input (IN)
Maximum input voltage for logic low for the control input (IN)
Voltage at the control input (IN)
ICOM(PWROFF)
VIH
VIL
VI
IIH, IIL
Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tON
tOFF
tBBM
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
QC
CNO(OFF)
CNO(ON)
CCOM(ON)
CCOM(OFF)
CI
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
XTALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
14
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
PARAMETER DESCRIPTION (continued)
SYMBOL
THD
DESCRIPTION
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
PARAMETER MEASURMENT INFORMATION
V
– V
NO
COM
I
r
=
Ω
on
COM
Figure 19. ON-State Resistance (ron)
Current
Figure 20. OFF-State Leakage Current (INC(OFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF)
)
Current
Figure 21. ON-State Leakage Current (ICOM(ON), INO(ON)
)
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
PARAMETER MEASURMENT INFORMATION (continued)
Capacitance
Meter
V
= V or GND
+
BIAS
V = V or GND
I
+
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
V
BIAS
Figure 22. Capacitance (CI, CCOM(ON), CNO(OFF), CCOM(OFF), CNO(ON)
)
50 Ω
50 Ω
35 pF
35 pF
(B)
CL
(B)
CL
Logic
Input(A)
t
OFF
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 23. Turn-On (tON) and Turn-Off Time (tOFF
)
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PARAMETER MEASURMENT INFORMATION (continued)
(B)
CL
Logic
Input(A)
Ω
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 24. Break-Before-Make Time (tBBM
)
Ω
Channel ON: NO0 to COM
Network Analyzer Setup
NO1–NO2
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
Ω
DC Bias = 350 mV
Figure 25. Bandwidth (BW)
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
PARAMETER MEASURMENT INFORMATION (continued)
Ω
Channel OFF: NO0 to COM
Ω
NO1–NO2
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
Ω
DC Bias = 350 mV
Figure 26. OFF Isolation (OISO
)
Ω
Channel ON: NO0 to COM
Channel OFF: NO0–NO1 to
COM
NO1–NO2
Ω
Ω
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
Figure 27. Crosstalk (XTALK
)
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SCDS214C–OCTOBER 2005–REVISED JANUARY 2008
PARAMETER MEASURMENT INFORMATION (continued)
V
IH
V
IL
ΔV
COM
(B)
CL
V
= 0 to V
GEN
+
R
C
= 0
GEN
= 1 nF
Logic
Input(A)
L
Q
= C x ΔV
L
C
COM
V = V or V
IL
I
IH
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 28. Charge Injection (QC)
Ω
10 μF
10 μF
(A)
CL
Ω
Ω
Ω
A. CL includes probe and jig capacitance.
Figure 29. Total Harmonic Distortion (THD)
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Jan-2010
PACKAGING INFORMATION
Orderable Device
TS5A3359DCUR
TS5A3359DCURE4
TS5A3359DCURG4
TS5A3359DCUT
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
US8
DCU
8
8
8
8
8
8
8
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
US8
US8
DCU
DCU
DCU
DCU
DCU
YZP
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
US8
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS5A3359DCUTE4
TS5A3359DCUTG4
TS5A3359YZPR
US8
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
US8
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
DSBGA
3000 Green (RoHS &
no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
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Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Jan-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS5A3359DCUR
TS5A3359YZPR
US8
DCU
YZP
8
8
3000
3000
180.0
180.0
9.2
8.4
2.25
1.02
3.35
2.02
1.05
0.63
4.0
4.0
8.0
8.0
Q3
Q1
DSBGA
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Jan-2010
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TS5A3359DCUR
TS5A3359YZPR
US8
DCU
YZP
8
8
3000
3000
202.0
220.0
201.0
220.0
28.0
34.0
DSBGA
Pack Materials-Page 2
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dsp.ti.com
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interface.ti.com
logic.ti.com
power.ti.com
microcontroller.ti.com
www.ti-rfid.com
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