TS5A3359YEPR [TI]
1-ohm SP3T ANALOG SWITCH 5-V/3.3-V SINGLE - CHANNEL 3; 1欧姆SP3T模拟开关5 -V / 3.3 - V单 - 通道3
| 型号： | TS5A3359YEPR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1-ohm SP3T ANALOG SWITCH 5-V/3.3-V SINGLE - CHANNEL 3 |
| 文件： | 总22页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ꢆ
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www.ti.com
SCDS214 – OCTOBER 2005
Description
Features
The TS5A3359 is a single-pole triple-throw (SP3T)
analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance
and excellent ON-state resistance matching with the
break-before-make feature, to prevent signal distortion
during the transferring of a signal from one channel to
another. The device has an excellent total harmonic
distortion (THD) performance and consumes very low
power. These features make this device suitable for
portable audio applications.
D
D
D
D
D
D
D
D
D
Isolation in the Power-Down Mode, V = 0
+
Specified Break-Before-Make Switching
Low ON-State Resistance (1 W)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Applications
D
D
D
D
D
D
D
D
D
D
Cell Phones
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data Acquisition Systems
Communication Circuits
Modems
D
ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
− 1000-V Charged-Device Model (C101)
Hard Drives
Summary of Characteristics
Computer Peripherals
Wireless Terminals and Peripherals
V = 5 V, T = 25°C
+
A
Triple 3:1 Multiplexer/
Demultiplexer
Configuration
(1 SP3T)
YEP OR YZP PACKAGE
(BOTTOM VIEW)
DCT OR DCU PACKAGE
(TOP VIEW)
Number of channels
1
1.1 Ω
ON-state resistance (r
)
on
Logic
Control
8
ON-state resistance match (∆r
ON-state resistance flatness (r
Turn-on/turn-off time (t /t
)
on
0.1 Ω
4
5
1
GND
IN2
NO0
NO1
NO2
GND
V
+
)
0.15 Ω
2
3
4
7
6
5
3
2
6
7
COM
on(flat)
)
NO2
NO1
NO0
IN1
40 ns/35 ns
1 ns
ON OFF
COM
IN1
IN2
Break-before-make time (t
)
Logic Control
BBM
8
1
V
+
Charge injection (Q )
C
40 pC
Bandwidth (BW)
100 MHz
−65 dB at 1 MHz
−66 dB at 1 MHz
0.01%
FUNCTION TABLE
IN1
OFF isolation (O
Crosstalk (X
)
ISO
)
COM TO NO,
NO TO COM
IN2
TALK
Total harmonic distortion (THD)
Leakagecurrent(I /I
L
L
L
H
L
OFF
)
20 nA
COM(OFF) NO(OFF)
COM = NO0
COM = NO1
COM = NO2
Power-supply current (I )
+
0.1 µA
H
H
8-pin, DCT, DCU, YEP,
or YZP
Package option
H
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2005, Texas Instruments Incorporated
ꢈ ꢙꢋ ꢚꢗ ꢏ ꢀꢎ ꢋꢉ ꢚ ꢃꢀꢃ ꢛꢜ ꢝꢞ ꢟ ꢠꢡ ꢢꢛꢞꢜ ꢛꢣ ꢤꢥ ꢟ ꢟ ꢦꢜꢢ ꢡꢣ ꢞꢝ ꢧꢥꢨ ꢩꢛꢤ ꢡꢢꢛ ꢞꢜ ꢪꢡ ꢢꢦꢓ ꢈꢟ ꢞꢪꢥ ꢤꢢꢣ
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www.ti.com
SCDS214 – OCTOBER 2005
ORDERING INFORMATION
(1)
(2)
T
A
PACKAGE
ORDERABLE PART NUMBER TOP-SIDE MARKING
NanoStar − WCSP (DSBGA)
0.23-mm Large Bump − YEP
TS5A3359YEPR
Tape and reel
PREVIEW
NanoFree − WCSP (DSBGA)
0.23-mm Large Bump − YZP (Pb-free)
TS5A3359YZPR
−40°C to 85°C
SSOP − DCT
Tape and reel
Tape and reel
TS5A3359DCTR
TS5A3359DCUR
PREVIEW
JAL_
VSSOP − DCU
(1)
(2)
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character
to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
(1)(2)
Absolute Minimum and Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
(3)
V
V
Supply voltage range
−0.5
6.5
V
+
NO
(3)(4)(5)
Analog voltage range
−0.5
V
+
+ 0.5
V
V
COM
I
Analog port diode current
On-state switch current
V
, V
NO COM
< 0
−50
−200
−400
−0.5
−50
mA
K
200
400
6.5
I
I
NO
COM
V , V
NO COM
= 0 to V
mA
+
(6)
On-state peak switch current
(3)(4)
V
Digital input voltage range
V
I
I
I
I
Digital input clamp current
V < 0
I
mA
IK
Continuous current through V
100
100
227
140
150
+
+
mA
Continuous current through GND
−100
GND
DCT/DCU package
YEP/YZP package
(7)
θ
Package thermal impedance
°C/W
°C
JA
T
Storage temperature range
−65
stg
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified
is not implied.
(2)
(3)
(4)
(5)
(6)
(7)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle.
The package thermal impedance is calculated in accordance with JESD 51-7.
2
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SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 5-V Supply
V
+
= 4.5 V to 5.5 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog Switch
Analog signal
range
V
, V
0
V
V
Ω
Ω
COM NO
+
25 °C
Full
0.8
0.7
1.1
1.5
0.9
1.1
Peak ON
resistance
0 ≤ (V ) ≤ V ,
Switch ON,
See Figure 13
NO
+
r
4.5 V
4.5 V
peak
I
= −100 mA,
COM
25°C
Full
ON-state
resistance
V
I
= 2.5 V,
Switch ON,
See Figure 13
NO
r
on
= −100 mA,
COM
ON-state
resistance match
between channels
25°C
0.1
0.1
0.1
V
= 2.5 V,
= −100 mA,
Switch ON,
See Figure 13
NO
∆r
on
4.5 V
4.5 V
Ω
Ω
I
COM
Full
0 ≤ (V ) ≤ V ,
Switch ON,
See Figure 13
NO
= −100 mA,
+
25°C
0.15
0.1
I
COM
ON-state
resistance flatness
r
on(flat)
25°C
0.25
0.25
V
I
= 1 V, 1.5 V, 2.5 V,
= −100 mA,
Switch ON,
See Figure 13
NO
COM
Full
V
= 1 V, V
= 1 V to 4.5 V,
COM
25°C
−20
5
20
NO
Switch OFF,
See Figure 14
or
I
5.5 V
0 V
nA
µA
nA
NO(OFF)
NO
OFF leakage
current
Full
−150
150
V
= 4.5 V, V
= 1 V to 4.5 V,
= Open,
NO
NO
COM
25°C
−1
0.8
5
1
V
V
= 0 to 5.5 V,
= 5.5 V to 0,
Switch OFF,
See Figure 14
I
NO(PWROFF)
Full
−25
25
COM
NO
ON leakage
current
V
NO
= 1 V, V
COM
25°C
Full
−30
−220
−25
30
220
25
Switch ON,
See Figure 15
or
I
5.5 V
NO(ON)
V
V
= 4.5 V, V
= Open,
COM
NO
= 4.5 V, V
= 1 V to 4.5 V,
25°C
Full
8
NO
COM
Switch OFF,
See Figure 14
or
I
5.5 V
0 V
nA
µA
nA
COM(OFF)
COM
OFF leakage
current
−250
250
V
NO
= 1 V, V
= 1 V to 4.5 V,
COM
25°C
−8
0.1
5
8
V
V
= 0 to 5.5 V,
= 5.5 V to 0,
Switch OFF,
See Figure 14
COM
NO
I
COM(PWROFF)
Full
−50
50
COM
ON leakage
current
V
V
= Open, V
= 1 V,
25°C
−30
30
NO
COM
Switch ON,
See Figure 15
or
I
5.5 V
COM(ON)
Full
−220
220
= Open, V
= 4.5 V,
NO
COM
(2)
Digital Control Inputs (IN1, IN2)
Input logic high
Input logic low
V
Full
Full
2.4
0
5.5
0.8
2
V
V
IH
V
IL
25°C
Full
−2
Input leakage
current
I
, I
IH IL
V = 5.5 V or 0
I
5.5 V
nA
−20
20
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
3
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www.ti.com
SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 5-V Supply (continued)
V
+
= 4.5 V to 5.5 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
2.5
6
A
+
Dynamic
25°C
Full
5 V
1
1
21
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
See Figure 17
C = 35 pF,
L
4.5 V to 5.5 V
5 V
23.5
25°C
Full
1
10.5
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
4.5 V to 5.5 V
5 V
1
12
L
25°C
Full
0.5
0.5
8.5
18
Break-before-
make time
V
R
= V ,
NO
L
+
t
ns
BBM
= 50 Ω,
See Figure 18
C = 1 nF,
L
4.5 V to 5.5 V
23
Charge
injection
V
R
= 0,
= 0,
GEN
Q
25°C
25°C
5 V
5 V
20
18
pC
pF
C
See Figure 22
GEN
NO
OFF
capacitance
V
= V or GND,
+
NO
Switch OFF,
C
NO(OFF)
See Figure 16
COM
OFF
capacitance
V
= V or GND,
+
COM
Switch OFF,
C
See Figure 16
See Figure 16
25°C
25°C
2.5 V
5 V
54
78
pF
pF
COM(OFF)
NO
ON
capacitance
V
= V or GND,
+
NO
Switch ON,
C
NO(ON)
COM
ON
capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16
25°C
5 V
78
pF
COM(ON)
Digital input
capacitance
C
V = V or GND,
See Figure 16
See Figure 19
25°C
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
5 V
2.5
75
pF
MHz
dB
I
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
Switch ON,
R
= 50 Ω,
Switch OFF,
See Figure 20
L
O
−64
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
See Figure 21
L
X
−64
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
L
C
L
= 600 Ω,
= 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
THD
0.005
%
Supply
25°C
16
50
Positive supply
current
I
+
V = V or GND,
Switch ON or OFF
5.5 V
nA
I
+
Full
1200
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
4
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SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 3.3-V Supply
V
+
= 3 V to 3.6 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog Switch
Analog signal
range
V
, V ,
COM NO
0
V
V
Ω
Ω
+
V
NC
25 °C
Full
1.3
1.2
1.6
2
Peak ON
resistance
0 ≤ (V ) ≤ V ,
Switch ON,
See Figure 13
NO
+
r
3 V
3 V
peak
I
= −100 mA,
COM
25°C
Full
1.6
1.8
ON-state
resistance
V
I
= 2 V,
= −100 mA,
Switch ON,
See Figure 13
NO
COM
r
on
ON-state
resistance match
between channels
25°C
0.1
0.15
0.15
V
= 2 V, 0.8 V,
= −100 mA,
Switch ON,
See Figure 13
NO
∆r
on
3 V
3 V
Ω
Ω
I
COM
Full
0 ≤ (V ) ≤ V ,
Switch ON,
See Figure 13
NO
+
25°C
0.2
0.2
I
= −100 mA,
COM
ON-state
resistance flatness
r
on(flat)
25°C
0.35
0.35
V
I
= 2 V, 0.8 V,
= −100 mA,
Switch ON,
See Figure 13
NO
COM
Full
V
= 1 V, V
= 1 V to 3 V,
= 1 V to 3 V,
25°C
−15
−30
3
15
30
NO
COM
Switch OFF,
See Figure 14
or
I
3.6 V
0 V
nA
µA
nA
NO(OFF)
NO
OFF leakage
current
Full
V
NO
= 3 V, V
COM
25°C
−1
0.2
3
1
V
V
= 0 to 3.6 V,
= 3.6 V to 0,
Switch OFF,
See Figure 14
NO
COM
I
NO(PWROFF)
Full
−10
10
NO
ON leakage
current
V
NO
= 1 V, V
= Open,
= Open,
25°C
Full
−15
−40
−15
−75
15
40
15
75
COM
Switch ON,
See Figure 15
or
I
3.6 V
NO(ON)
V
V
= 3 V, V
NO
COM
= 0 V to 3.6 V, V
or
= 3.6 V to 0 V, V
= 1 V,
= 3 V,
25°C
Full
3
NO
COM
Switch OFF,
See Figure 14
I
3.6 V
0 V
nA
µA
nA
COM(OFF)
COM
OFF leakage
current
V
NO
COM
25°C
−1
0.2
4
1
V
V
= 0 to 3.6 V,
= 3.6 V to 0,
Switch OFF,
See Figure 14
COM
NO
I
COM(PWROFF)
Full
−20
20
COM
ON leakage
current
V
V
= Open, V
= 1 V,
= 3 V,
25°C
−15
−40
15
40
NO
COM
Switch ON,
See Figure 15
or
I
3.6 V
COM(ON)
Full
= Open, V
NO
COM
(2)
Digital Control Inputs (IN1, IN2)
Input logic high
Input logic low
V
Full
Full
2
0
5.5
0.8
2
V
V
IH
V
IL
25°C
Full
−2
Input leakage
current
I
, I
IH IL
V = 5.5 V or 0
I
3.6 V
nA
−20
20
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
5
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SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 3.3-V Supply (continued)
V
+
= 3 V to 3.6 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
16
6
A
+
Dynamic
25°C
Full
3.3 V
1
1
30.5
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
See Figure 17
C = 35 pF,
L
3 V to 3.6 V
3.3 V
34
25°C
Full
1
11.5
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
3 V to 3.6 V
3.3 V
1
12.5
L
25°C
Full
0.5
0.5
13
26
Break-before-
make time
V
R
= V
NO
= 50 Ω,
= V ,
NC
+
t
ns
BBM
See Figure 18
C = 1 nF,
L
3 V to 3.6 V
30
L
V
R
= 0,
= 0,
GEN
Charge injection
Q
25°C
25°C
3.3 V
12
18
pC
pF
C
See Figure 22
GEN
NO
OFF
capacitance
V
= V or GND,
+
NO
Switch OFF,
C
NO(OFF)
See Figure 16
3.3 V
COM
OFF
capacitance
V
= V or GND,
+
COM
Switch OFF,
C
See Figure 16
See Figure 16
25°C
25°C
3.3 V
3.3 V
55
78
pF
pF
COM(OFF)
NO
V
= V or GND,
+
NO
Switch ON,
C
NO(ON)
ON capacitance
COM
ON capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16
See Figure 16
See Figure 19
25°C
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
78
2.5
pF
pF
COM(ON)
Digital input
capacitance
C
I
V = V or GND,
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
73
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
See Figure 20
L
O
−64
−64
0.010
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
See Figure 21
L
X
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
C
= 600 Ω,
= 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
L
L
THD
%
Supply
25°C
2
20
Positive supply
current
I
+
V = V or GND,
Switch ON or OFF
3.6 V
nA
I
+
Full
350
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
6
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www.ti.com
SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 2.5-V Supply
V
+
= 2.3 V to 2.7 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
Analog Switch
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog signal
range
V
, V
0
V
V
Ω
Ω
COM NO
+
25 °C
Full
1.8
1.5
2.5
2.7
2
Peak ON
resistance
0 ≤ (V ) ≤ V ,
Switch ON,
See Figure 13
NO
+
r
2.3 V
2.3 V
peak
I
= −8 mA,
COM
25°C
Full
ON-state
resistance
V
I
= 1.8 V,
= −8 mA,
Switch ON,
See Figure 13
NO
COM
r
on
2.4
ON-state
resistance
match
between
channels
25°C
Full
0.15
0.2
0.2
V
= 1.8 V,
= −8 mA,
Switch ON,
See Figure 13
NO
∆r
on
2.3 V
2.3 V
Ω
Ω
I
COM
0 ≤ (V
NO
) ≤ V ,
= −8 mA,
Switch ON,
See Figure 13
+
25°C
0.6
0.6
ON-state
resistance
flatness
I
COM
r
on(flat)
25°C
1
1
V
I
= 0.8 V, 1.8 V,
= −8 mA,
Switch ON,
See Figure 13
NO
COM
Full
V
= 0.5 V, V
= 0.5 V to 2.3 V,
COM
25°C
−15
−30
3
15
30
NO
Switch OFF,
See Figure 14
or
I
2.7 V
0 V
nA
µA
nA
NO(OFF)
NO
OFF leakage
current
Full
V
= 2.3 V, V
COM
= 0.5 V to 2.3 V,
NO
NO
25°C
−1
0.1
3
1
V
V
= 0 to 2.7 V,
= 2.7 V to 0,
Switch OFF,
See Figure 14
I
NO(PWROFF)
Full
−10
10
COM
NO
ON leakage
current
V
NO
= 0.5 V, V
= Open,
= Open,
25°C
Full
−15
−35
−15
−60
15
35
15
60
COM
Switch ON,
See Figure 15
or
I
2.7 V
NO(ON)
V
V
= 2.2 V, V
NO
COM
= 0.3 V to 2.3 V, V
or
= 0.3 V to 2.3 V, V
= 0.5 V,
= 2.3 V,
25°C
Full
3
NO
COM
Switch OFF,
See Figure 14
I
2.7 V
0 V
nA
µA
nA
COM(OFF)
COM
OFF leakage
current
V
NO
COM
25°C
−1
0.1
3.5
1
V
V
= 0 to 2.7 V,
= 2.7 V to 0,
Switch OFF,
See Figure 14
COM
NO
I
COM(PWROFF)
Full
−10
10
COM
ON leakage
current
V
NO
= Open, V
= 0.5 V,
COM
25°C
−15
−40
15
40
Switch ON,
See Figure 15
or
I
2.7 V
COM(ON)
Full
V
NO
= Open V, V
= 2.2 V,
COM
(2)
Digital Control Inputs (IN1, IN2)
Input logic
high
V
Full
1.8
5.5
V
V
IH
Input logic low
V
Full
25°C
Full
0
1
0.6
1
IL
Input leakage
current
I
, I
IH IL
V = 5.5 V or 0
I
2.7 V
nA
10
10
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
7
ꢀ ꢁ ꢂꢃ ꢄ ꢄ ꢂ ꢅ
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SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 2.5-V Supply (continued)
V
+
= 2.3 V to 2.7 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
4.5
A
+
Dynamic
25°C
Full
2.5 V
2
2
43
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
See Figure 17
C = 35 pF,
L
2.3 V to 2.7 V
2.5 V
47.5
25°C
Full
2
8.5
11
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
2.3 V to 2.7 V
2.5 V
2
12.5
L
25°C
Full
0.5
0.5
18.5
38.5
Break-before-
make time
V
R
= V ,
NO
L
+
t
ns
BBM
= 50 Ω,
See Figure 18
C = 1 nF,
L
2.3 V to 2.7 V
43
V
R
= 0,
= 0,
GEN
Charge injection
Q
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
8
18.5
55
pC
pF
pF
pF
C
See Figure 22
GEN
NO
V
= V or GND,
+
NO
Switch OFF,
C
See Figure 16
NO(OFF)
OFF capacitance
COM
OFF capacitance
V
= V or GND,
+
COM
Switch OFF,
C
See Figure 16
See Figure 16
COM(OFF)
NO
V
= V or GND,
+
NO
Switch ON,
C
78
NO(ON)
ON capacitance
COM
ON capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16
See Figure 16
See Figure 19
25°C
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
78
3
pF
pF
COM(ON)
Digital input
capacitance
C
I
V = V or GND,
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
73
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
See Figure 20
L
O
−64
−64
0.030
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
See Figure 21
L
X
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
C
= 600 Ω,
= 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
L
L
THD
%
Supply
25°C
1
10
Positive supply
current
I
+
V = V or GND,
Switch ON or OFF
2.7 V
nA
I
+
Full
250
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
8
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SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 1.8-V Supply
V
+
= 1.65 V to 1.95 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog Switch
Analog signal
range
V
, V
V
COM NO
25 °C
Full
5
2
Peak ON
resistance
0 ≤ (V ) ≤ V ,
Switch ON,
See Figure 13
NO
+
r
1.65 V
1.65 V
Ω
peak
I
= −2 mA,
30
COM
25°C
Full
2.5
ON-state
resistance
V
I
= 1.5 V,
= −2 mA,
Switch ON,
See Figure 13
NO
COM
r
on
Ω
3.5
ON-state
resistance
match
between
channels
25°C
Full
0.15
0.4
V
= 1.5 V,
= −2 mA,
Switch ON,
See Figure 13
NO
∆r
on
1.65 V
1.65 V
Ω
I
COM
0.4
0 ≤ (V ) ≤ V ,
NO
Switch ON,
See Figure 13
+
25°C
5
ON-state
resistance
flatness
I
= −2 mA,
COM
r
Ω
on(flat)
25°C
4.5
TBD
V
I
= 0.6 V, 1.5 V,
= −2 mA,
Switch ON,
See Figure 13
NO
COM
Full
TBD
V
= 0.3 V, V
= 0.3 V to 1.65 V,
COM
25°C
−15
−30
3
15
nA
30
NO
Switch OFF,
See Figure 14
or
I
1.95 V
0 V
NO(OFF)
NO
Full
V
= 1.65 V, V
= 0.3 V to 1.65 V,
NO
NO
COM
OFF leakage
current
25°C
−1
0.1
3
1
V
V
= 0 to 1.95 V,
= 1.95 V to 0,
Switch OFF,
See Figure 14
I
µA
NO(PWROFF)
Full
−15
15
COM
NO
V
NO
= 0.3 V, V
COM
or
= 1.65 V, V
= Open,
25°C
Full
−15
−30
−15
−50
15
nA
30
Switch ON,
See Figure 15
ON leakage
current
I
1.95 V
NO(ON)
V
V
= Open,
COM
NO
= 0.3 V to 1.65 V, V
or
= 0.3 V to 1.65 V, V
= 0.3 V,
25°C
Full
3
15
nA
50
NO
COM
Switch OFF,
See Figure 14
I
1.95 V
0 V
COM(OFF)
COM
V
NO
= 1.65 V,
COM
OFF leakage
current
25°C
−1
0.1
3
1
V
V
= 0 to 1.95 V,
= 1.95 V to 0,
Switch OFF,
See Figure 14
COM
NO
I
µA
COM(PWROFF)
Full
−10
10
COM
V
NO
= Open, V
= 0.3 V,
= 1.65 V,
COM
25°C
−15
−30
15
nA
30
COM
Switch ON,
See Figure 15
ON leakage
current
or
I
1.95 V
COM(ON)
Full
V
NO
= Open, V
(2)
Digital Control Inputs (IN1, IN2)
Input logic
high
V
Full
1.5
5.5
V
V
IH
Input logic low
V
Full
25°C
Full
0
−2
20
0.6
2
IL
Input leakage
current
I
, I
IH IL
V = 5.5 V or 0
I
1.95 V
nA
20
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
9
ꢀ ꢁ ꢂꢃ ꢄ ꢄ ꢂ ꢅ
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SCDS214 – OCTOBER 2005
(1)
Electrical Characteristics for 1.8-V Supply (continued)
V
+
= 1.65 V to 1.95 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
38.5
8.5
A
+
Dynamic
25°C
Full
1.8 V
3
3
2
2
1
1
85
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
See Figure 17
C = 35 pF,
L
1.65 V to 1.95 V
1.8 V
90
25°C
Full
16
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
1.65 V to 1.95 V
1.8 V
18
L
25°C
Full
33
75
Break-before-
make time
V
R
= V ,
+
= 50 Ω,
NO
t
ns
BBM
See Figure 18
C = 1 nF,
L
1.65 V to 1.95 V
80
L
Charge
injection
V
R
= 0,
= 0,
GEN
Q
25°C
25°C
1.8 V
1.8 V
5
pC
pF
C
See Figure 22
GEN
NO
OFF
capacitance
V
= V or GND,
+
NO
Switch OFF,
C
See Figure 16
18.5
NO(OFF)
COM
OFF
capacitance
V
= V or GND,
+
COM
Switch OFF,
C
See Figure 16
See Figure 16
25°C
25°C
1.8 V
1.8 V
55
78
pF
pF
COM(OFF)
NO
ON
capacitance
V
= V or GND,
+
NO
Switch ON,
C
NO(ON)
COM
ON
capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16
25°C
1.8 V
78
pF
COM(ON)
Digital input
capacitance
C
V = V or GND,
See Figure 16
See Figure 19
25°C
25°C
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
3
73
pF
MHz
dB
I
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
Switch ON,
R
= 50 Ω,
Switch OFF,
See Figure 20
L
O
−64
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
See Figure 21
L
X
−64
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
L
C
L
= 600 Ω,
= 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
THD
0.080
%
Supply
25°C
1
Positive
supply current
I
+
V = V or GND,
Switch ON or OFF
1.95 V
nA
I
+
Full
200
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
10
ꢀꢁ ꢂꢃ ꢄ ꢄꢂ ꢅ
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ꢕ
ꢆ
ꢖ
ꢗ
ꢊꢀ
ꢎ
ꢈ
ꢊꢔ
ꢘ
ꢔ
ꢙ
ꢒ ꢚꢔꢖ ꢗꢊꢀꢎ ꢈ ꢊꢔ ꢘꢔ ꢙ
SCDS214 – OCTOBER 2005
TYPICAL PERFORMANCE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.5
T
= 855C
A
T
A
= 255C
V
= 1.8 V
+
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 2.5 V
+
T
A
= –405C
V
= 3.3 V
+
V
= 5 V
1.0
CC
0.0
0.5
1.5
2.0
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
V
(V)
COM
V
COM
Figure 1. r vs V
Figure 2. r vs V
(V = 3.3 V)
on
COM
on
COM +
1.0
0.8
0.6
0.4
0.2
0.0
60
T
= 855C
A
40
20
T
A
= 255C
T
= –405C
= 25C
A
T
A
0
−20
−40
T
= –405C
A
−60
T
A
= 855C
−80
−100
−120
−140
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
5
6
V
COM
(V)
I
COM(OFF)
Figure 3. r vs V
(V = 5 V)
+
Figure 4. Leakage Current vs Temperature
on
COM
50
40
30
20
250
200
150
100
50
T
= –405C
= 255C
A
T
A
10
0
T
= –405C
= 255C
A
T
A
−10
−20
−30
−40
−50
0
T
A
= 855C
−50
−100
−150
T
= 855C
A
0
1
2
3
4
5
6
0
6
1
2
3
4
5
I
I
NO(OFF)
COM(ON)
Figure 5. Leakage Current vs Temperature
Figure 6. Leakage Current vs Temperature
11
ꢀ ꢁ ꢂꢃ ꢄ ꢄ ꢂ ꢅ
ꢇW ꢁꢈ ꢄꢀ ꢃ ꢉꢃ ꢊ ꢋ ꢌ ꢁ ꢍꢎ ꢀ ꢏꢐ
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ꢂ
ꢇ
ꢑꢒ
ꢄ
ꢓꢄ
ꢇ
ꢑ
ꢁ
ꢎ
ꢉ
ꢌ
ꢊ
ꢔꢇ
ꢏ
ꢐ
ꢃ
ꢉ
ꢉ
ꢔꢊ
ꢄ
ꢕ
ꢆ
ꢖ
ꢗ
ꢊꢀ
ꢎ
ꢈ
ꢊꢔ
ꢘ
ꢔ
ꢙ
ꢒ
ꢚ
ꢔ
ꢖ
ꢗ
ꢊꢀ
ꢎ
ꢈ
ꢊꢔ
ꢘ
ꢔ
ꢙ
www.ti.com
SCDS214 – OCTOBER 2005
30
20
4500
4000
3500
3000
2500
V
= 5 V
COM
V
= 3.3 V
COM
10
V
COM
= 2.5 V
T
= 855C
0
A
−10
−20
−30
−40
−50
−60
−70
T
= –405C
A
2000
V
COM
= 1.8 V
1500
1000
500
0
T
A
= 255C
−500
0
1
2
3
4
5
6
0
1
2
3
4
5
6
I
COM(PWROFF)
Bias Voltage (V)
Figure 7. Leakage Current vs Temperature
Figure 8. Charge Injection (Q ) vs V
C
COM
90
80
14
12
10
8
t
t
ON
OFF
70
60
50
t
t
ON
OFF
40
30
20
10
0
6
4
2
0
0
1
2
3
4
5
6
−40
25
85
V
(V)
CC
T
(5C)
OFF
A
Figure 9. t
and t
vs Supply Voltage
Figure 10. t
and t
vs Temperature
ON
OFF
ON
2.5
0
−2
V
IN
Rising
2.0
1.5
1.0
0.5
0.0
−4
−6
V
Falling
IN
−8
−10
−12
−14
0.1
0
1
2
3
4
5
6
1
10
Frequency (MHz)
100
1000
V
+
(V)
Figure 11. Logic-Level Threshold vs V
Figure 12. Bandwidth (V = 5 V)
+
+
12
ꢀꢁ ꢂꢃ ꢄ ꢄꢂ ꢅ
ꢇW ꢁꢈ ꢄ ꢀ ꢃꢉꢃ ꢊꢋ ꢌ ꢁ ꢍꢎ ꢀꢏ ꢐ
ꢆ
ꢂ ꢇꢑ ꢒ ꢄꢓ ꢄ ꢇꢑ ꢁꢎ ꢉꢌ ꢊ ꢔꢇꢏꢐꢃꢉꢉ ꢔꢊ ꢄ ꢕꢆ ꢖ ꢗꢊꢀ ꢎꢈ ꢊꢔ ꢘꢔꢙꢒ ꢚꢔꢖ ꢗꢊꢀꢎ ꢈ ꢊꢔ ꢘꢔ ꢙ
www.ti.com
SCDS214 – OCTOBER 2005
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0
−20
−40
−60
−80
−100
0.1
1
10
Frequency (MHz)
100
1000
0.01
0.1
1
10
100
Frequency (kHz)
Figure 14. Total Harmonic Distortion
vs Frequency
Figure 13. OFF Isolation vs Crosstalk
180
160
140
120
100
80
60
40
20
0
−60 −40 −20
0
20
40
60
80
100
T
A
(5C)
Figure 15. Power-Supply Current vs Temperature
(V = 5 V)
+
13
ꢀ ꢁ ꢂꢃ ꢄ ꢄ ꢂ ꢅ
ꢇW ꢁꢈ ꢄꢀ ꢃ ꢉꢃ ꢊ ꢋ ꢌ ꢁ ꢍꢎ ꢀ ꢏꢐ
ꢆ
ꢂ
ꢇ
ꢑ
ꢒ
ꢄ
ꢓꢄ
ꢇ
ꢑ
ꢁ
ꢎ
ꢉ
ꢌ
ꢊ
ꢔꢇ
ꢏ
ꢐ
ꢃ
ꢉ
ꢉ
ꢔ
ꢊ
ꢄ
ꢕ
ꢆ
ꢖ
ꢗ
ꢊꢀ
ꢎ
ꢈ
ꢊꢔ
ꢘ
ꢔ
ꢙ
ꢒ
ꢚ
ꢔ
ꢖ
ꢗ
ꢊꢀ
ꢎ
ꢈ
ꢊ
ꢔ
ꢘ
ꢔ
ꢙ
www.ti.com
SCDS214 – OCTOBER 2005
PIN DESCRIPTION
PIN
NUMBER
NAME
DESCRIPTION
1
2
3
4
5
6
7
8
NO0
NO1
NO2
GND
IN2
Digital control pin to connect COM to NO
Normally open
Normally open
Digital ground
Digital control pin to connect COM to NO
Digital control pin to connect COM to NO
Common
IN1
COM
V
+
Power supply
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
V
V
Voltage at COM
Voltage at NO
COM
NO
r
r
Resistance between COM and NO ports when the channel is ON
Peak on-state resistance over a specified voltage range
on
peak
∆r
on
Difference of r between channels in a specific device
on
r
Difference between the maximum and minimum value of r in a channel over the specified range of conditions
on
on(flat)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case
input and output conditions
I
NO(OFF)
I
Leakage current measured at the NO port during the power-down condition, V = 0
+
NO(PWROFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
I
NO(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
I
I
COM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NC) in the OFF state under
worst-case input and output conditions
COM(OFF)
I
Leakage current measured at the COM port during the power-down condition, V = 0
+
COM(PWROFF)
V
Minimum input voltage for logic high for the control input (IN)
Maximum input voltage for logic low for the control input (IN)
Voltage at the control input (IN)
IH
IL
I
V
V
I , I
IH IL
Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, or NO) signal when the switch is turning ON.
t
ON
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, or NO) signal when the switch is turning OFF.
t
t
OFF
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
BBM
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO, or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Q
C
Charge injection, Q = C × ∆V
, C is the load capacitance, and ∆V is the change in analog output voltage.
C
L
COM
L
COM
14
ꢀꢁ ꢂꢃ ꢄ ꢄꢂ ꢅ
ꢇW ꢁꢈ ꢄ ꢀ ꢃꢉꢃ ꢊꢋ ꢌ ꢁ ꢍꢎ ꢀꢏ ꢐ
ꢆ
ꢂ ꢇꢑ ꢒ ꢄꢓ ꢄ ꢇꢑ ꢁꢎ ꢉꢌ ꢊ ꢔꢇꢏꢐꢃꢉꢉ ꢔꢊ ꢄ ꢕꢆ ꢖ ꢗꢊꢀ ꢎꢈ ꢊꢔ ꢘꢔꢙꢒ ꢚꢔꢖ ꢗꢊꢀꢎ ꢈ ꢊꢔ ꢘꢔ ꢙ
www.ti.com
SCDS214 – OCTOBER 2005
PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
C
C
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
Capacitance of control input (IN)
NO(OFF)
NO(ON)
C
COM(ON)
C
COM(OFF)
C
I
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NO to COM) in the OFF state.
O
ISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This
is measured in a specific frequency and in dB.
X
TALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is −3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean
square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic.
THD
I
+
Static power-supply current with the control (IN) pin at V or GND
+
15
ꢀ ꢁ ꢂꢃ ꢄ ꢄ ꢂ ꢅ
ꢇW ꢁꢈ ꢄꢀ ꢃ ꢉꢃ ꢊ ꢋ ꢌ ꢁ ꢍꢎ ꢀ ꢏꢐ
ꢆ
ꢂ
ꢇ
ꢑꢒ
ꢄ
ꢓꢄ
ꢇ
ꢑ
ꢁ
ꢎ
ꢉ
ꢌ
ꢊ
ꢔꢇ
ꢏ
ꢐ
ꢃ
ꢉ
ꢉ
ꢔꢊ
ꢄ
ꢕ
ꢆ
ꢖ
ꢗ
ꢊ
ꢀ
ꢎ
ꢈ
ꢊ
ꢔ
ꢘ
ꢔ
ꢙ
ꢒ
ꢚ
ꢔ
ꢖ
ꢗ
ꢊꢀ
ꢎ
ꢈ
ꢊꢔ
ꢘ
ꢔ
ꢙ
www.ti.com
SCDS214 – OCTOBER 2005
PARAMETER MEASUREMENT INFORMATION
V
+
V
NO
NO0
COM
V
COM
+
Channel ON
NO1 - NO2
VCOM * VNO
r
+
W
on
ICOM
I
COM
V
I
IN
V = V or V
I IH IL
+
GND
Figure 16. ON-State Resistance (r
)
on
V
+
NO0
V
NO
COM
V
COM
+
NO1 - NO2
+
OFF-State Leakage Current
Channel OFF
V = V or V
I IH IL
V
I
IN
+
GND
Figure 17. OFF-State Leakage Current (I
, I
I
I
I
)
NC(OFF) NO(OFF), NO(PWROFF), COM(OFF), COM(PWROFF)
V
+
NO0
V
NO
COM
V
COM
+
NO1 - NO2
ON-State Leakage Current
Channel ON
V = V or V
I IH IL
IN
V
I
+
GND
Figure 18. ON-State Leakage Current (I
, I
)
COM(ON) NO(ON)
16
ꢀꢁ ꢂꢃ ꢄ ꢄꢂ ꢅ
ꢇW ꢁꢈ ꢄ ꢀ ꢃꢉꢃ ꢊꢋ ꢌ ꢁ ꢍꢎ ꢀꢏ ꢐ
ꢆ
ꢂ ꢇꢑ ꢒ ꢄꢓ ꢄ ꢇꢑ ꢁꢎ ꢉꢌ ꢊ ꢔꢇꢏꢐꢃꢉꢉ ꢔꢊ ꢄ ꢕꢆ ꢖ ꢗꢊꢀ ꢎꢈ ꢊꢔ ꢘꢔꢙꢒ ꢚꢔꢖ ꢗꢊꢀꢎ ꢈ ꢊꢔ ꢘꢔ ꢙ
www.ti.com
SCDS214 – OCTOBER 2005
V
+
NO0
V
NO
Capacitance
Meter
V
= V or GND
+
BIAS
V = V or GND
NO1 - NO2
COM
I
+
V
COM
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
V
BIAS
IN
V
I
GND
Figure 19. Capacitance (C , C
, C
, C
, C
)
I
COM(ON)
NO(OFF) COM(OFF) NO(ON)
V
+
TEST
R
L
C
L
V
COM
NO0
V
NO
t
50 Ω
50 Ω
35 pF
35 pF
V
ON
+
+
COM
IN
V
COM
(2)
C
L
R
L
NO1 - NO2
t
V
OFF
V
I
V
0
Logic
Input
(V )
I
+
(2)
C
R
L
50%
50%
L
Logic
(1)
GND
Input
t
t
OFF
ON
Switch
Output
90%
90%
( V
)
NO
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
O
r
f
C
L
includes probe and jig capacitance.
Figure 20. Turn-On (t ) and Turn-Off Time (t
)
ON
OFF
V
+
V
Logic
Input
(V )
I
+
V
NO
50%
NO0
0
V
COM
COM
NO1 - NO2
Switch
Output
90%
t
90%
(2)
C
L
R
L
(V
)
COM
IN
V
I
BBM
Logic
(1)
V
= V
+
= 50 Ω
= 35 pF
NO
GND
Input
R
C
L
L
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
L
O
r
f
C
includes probe and jig capacitance.
Figure 21. Break-Before-Make Time (t
)
BBM
17
ꢀ ꢁ ꢂꢃ ꢄ ꢄ ꢂ ꢅ
ꢇW ꢁꢈ ꢄꢀ ꢃ ꢉꢃ ꢊ ꢋ ꢌ ꢁ ꢍꢎ ꢀ ꢏꢐ
ꢆ
ꢂ
ꢇ
ꢑꢒ
ꢄ
ꢓꢄ
ꢇ
ꢑ
ꢁ
ꢎ
ꢉ
ꢌ
ꢊ
ꢔꢇ
ꢏ
ꢐ
ꢃ
ꢉ
ꢉ
ꢔꢊ
ꢄ
ꢕ
ꢆ
ꢖ
ꢗ
ꢊꢀ
ꢎ
ꢈ
ꢊ
ꢔ
ꢘ
ꢔ
ꢙ
ꢒ
ꢚ
ꢔ
ꢖ
ꢗ
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ꢎ
ꢈ
ꢊꢔ
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ꢔ
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www.ti.com
SCDS214 – OCTOBER 2005
V
+
Network Analyzer
50 W
V
NO
NO0
Channel ON: NO to
0
COM
V
COM
V = V or GND
COM
I
+
Source
Signal
NO1 - NO2
IN
Network Analyzer Setup
V
I
Source Power = 0 dBm
50 W
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 22. Bandwidth (BW)
V
+
Network Analyzer
Channel OFF: NO to COM
0
50 W
V
NO
NO0
V = V or GND
I
+
V
COM
COM
Source
Signal
NO1 - NO2
IN
50 W
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
V
I
50 W
+
GND
DC Bias = 350 mV
Figure 23. OFF Isolation (O
)
ISO
V
+
Network Analyzer
Channel ON: NO to COM
0
50 W
V
NO
Channel OFF: NO -NO to
NO0
0
1
COM
V
COM
Source
Signal
V = V or GND
I
+
NO1 - NO2
IN
50 W
V
I
Network Analyzer Setup
50 W
+
GND
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Figure 24. Crosstalk (X
)
TALK
18
ꢀꢁ ꢂꢃ ꢄ ꢄꢂ ꢅ
ꢇW ꢁꢈ ꢄ ꢀ ꢃꢉꢃ ꢊꢋ ꢌ ꢁ ꢍꢎ ꢀꢏ ꢐ
ꢆ
ꢂ ꢇꢑ ꢒ ꢄꢓ ꢄ ꢇꢑ ꢁꢎ ꢉꢌ ꢊ ꢔꢇꢏꢐꢃꢉꢉ ꢔꢊ ꢄ ꢕꢆ ꢖ ꢗꢊꢀ ꢎꢈ ꢊꢔ ꢘꢔꢙꢒ ꢚꢔꢖ ꢗꢊꢀꢎ ꢈ ꢊꢔ ꢘꢔ ꢙ
www.ti.com
SCDS214 – OCTOBER 2005
V
IH
V
+
Logic
Input
OFF
ON
OFF
V
(V
I)
IL
R
GEN
NO0
COM
V
COM
+
V
COM
∆V
COM
V
GEN
NO1 - NO2
(2)
C
L
V
= 0 to V
= 0
= 1 nF
GEN
+
V
I
IN
R
C
GEN
L
Logic
(1)
GND
Q = C ×∆V
V = V or V
I IH IL
C L COM
Input
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
O
r
f
C
L
includes probe and jig capacitance.
Figure 25. Charge Injection (Q )
C
V = V or V
IH
f = 20 Hz to 20 kHz
SOURCE
Channel ON: COM to NO
R
L
C
L
= 600 Ω
I
IL
0
V /2
+
V
= V P-P
= 50 pF
SOURCE
+
V
+
Audio Analyzer
R
L
10 mF
NO0
10 mF
Source
Signal
COM
IN
(1)
C
L
NO1 - NO2
600 W
600 W
V
I
GND
600 W
(1)
C
L
includes probe and jig capacitance.
Figure 26. Total Harmonic Distortion (THD)
19
PACKAGE OPTION ADDENDUM
www.ti.com
7-Feb-2006
PACKAGING INFORMATION
Orderable Device
TS5A3359DCUR
TS5A3359DCURE4
TS5A3359DCUT
TS5A3359DCUTE4
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
US8
DCU
8
8
8
8
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
US8
US8
US8
DCU
DCU
DCU
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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