TPS2012PW [TI]
POWER-DISTRIBUTION; 配电
| 型号： | TPS2012PW |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | POWER-DISTRIBUTION |
| 文件： | 总17页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
D PACKAGE
(TOP VIEW)
95-mΩ Max (5.5-V Input) High-Side MOSFET
Switch With Logic Compatible Enable Input
Short-Circuit and Thermal Protection
GND
IN
OUT
OUT
OUT
OUT
1
2
3
4
8
7
6
5
Typical Short-Circuit Current Limits:
0.4 A, TPS2010; 1.2 A, TPS2011;
2 A, TPS2012; 2.6 A, TPS2013
IN
EN
Electrostatic-Discharge Protection, 12-kV
Output, 6-kV All Other Terminals
PW PACKAGE
(TOP VIEW)
Controlled Rise and Fall Times to Limit
Current Surges and Minimize EMI
GND
IN
OUT
OUT
OUT
OUT
OUT
OUT
OUT
1
2
3
4
5
6
7
14
13
12
11
10
9
SOIC-8 Package Pin Compatible With the
Popular Littlefoot Series When GND Is
Connected
IN
IN
2.7-V to 5.5-V Operating Range
IN
10-µA Maximum Standby Current
IN
Surface-Mount SOIC-8 and TSSOP-14
Packages
EN
8
–40°C to 125°C Operating Junction
Temperature Range
description
The TPS201x family of power-distribution switches is intended for applications where heavy capacitive loads
and short circuits are likely to be encountered. The high-side switch is a 95-mΩ N-channel MOSFET. Gate drive
is provided by an internal driver and charge pump designed to control the power switch rise times and fall times
to minimize current surges during switching. The charge pump operates at 100 kHz, requires no external
components, and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit
threshold or a short circuit is present, the TPS201x limits the output current to a safe level by switching into a
constant-current mode. Continuous heavy overloads and short circuits increase power dissipation in the switch
and cause the junction temperature to rise. If the junction temperature reaches approximately 180°C, a thermal
protection circuit shuts the switch off to prevent damage. Recovery from thermal shutdown is automatic once
the device has cooled sufficiently.
The members of the TPS201x family differ only in short-circuit current threshold. The TPS2010 is designed to
limit at 0.4-A load; the other members of the family limit at 1.2 A, 2 A, and 2.6 A (see the available options table).
The TPS201x family is available in 8-pin small-outline integrated circuit (SOIC) and 14-pin thin shink
small-outline (TSSOP) packages and operates over a junction temperature range of –40°C to 125°C. Versions
in the 8-pin SOIC package are drop-in replacements for Siliconix’s Littlefoot power PMOS switches, except
that GND must be connected.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
AVAILABLE OPTIONS
PACKAGED DEVICES
RECOMMENDED MAXIMUM
CONTINUOUS LOAD CURRENT
(A)
TYPICAL SHORT-CIRCUIT
OUTPUT CURRENT LIMIT AT 25°C
CHIP
FORM
(Y)
T
J
SOIC
TSSOP
†
‡
(A)
(D)
(PW)
0.2
0.6
1
0.4
1.2
2
TPS2010D TPS2010PWLE TPS2010Y
TPS2011D TPS2011PWLE TPS2011Y
TPS2012D TPS2012PWLE TPS2012Y
TPS2013D TPS2013PWLE TPS2013Y
–40°C to 125°C
1.5
2.6
†
‡
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2010DR).
The PW package is only available left-end taped and reeled (indicated by the LE suffix on the device type; e.g., TPS2010PWLE).
functional block diagram
Power Switch
†
CS
IN
OUT
Charge
Pump
Current
Limit
Driver
EN
GND
Thermal
Sense
†
Current sense
Terminal Functions
TERMINAL
NO.
I/O
DESCRIPTION
NAME
D
4
PW
7
EN
I
I
Enable input. Logic low turns power switch on.
GND
IN
1
1
Ground
2, 3
5–8
2–6
8–14
I
Input voltage
Power-switch output
OUT
O
detailed description
power switch
The power switch is an N-channel MOSFET with a maximum on-state resistance of 95 mΩ (V
configured as a high-side switch.
= 5.5 V),
I(IN)
charge pump
An internal 100-kHz charge pump supplies power to the driver circuit and provides the necessary voltage to pull
the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and
requires very little supply current.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
detailed description (continued)
driver
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and
fall times of the output voltage. The rise and fall times are typically in the 2-ms to 4-ms range instead of the
microsecond or nanosecond range for a standard FET.
enable (EN)
AlogichighontheENinputturnsoffthepowerswitchandthebiasforthechargepump, driver, andothercircuitry
to reduce the supply current to less than 10 µA. A logic zero input restores bias to the drive and control circuits
and turns the power on. The enable input is compatible with both TTL and CMOS logic levels.
current sense
A sense FET monitors the current supplied to the load. The sense FET is a much more efficient way to measure
current than conventional resistance methods. When an overload or short circuit is encountered, the
current-sense circuitry sends a control signal to the driver. The driver in turn reduces the gate voltage and drives
the power FET into its linear region, which switches the output into a constant current mode and simply holds
the current constant while varying the voltage on the load.
thermal sense
An internal thermal-sense circuit shuts the power switch off when the junction temperature rises to
approximately 180°C. Hysteresis is built into the thermal sense, and after the device has cooled approximately
20 degrees, the switch turns back on. The switch continues to cycle off and on until the fault is removed.
TPS201xY chip information
This chip, when properly assembled, displays characteristics similar to the TPS201xC. Thermal compression
or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted with
conductive epoxy or a gold-silicon preform.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
BONDING PAD ASSIGNMENTS
(1)
(2)
(3)
(4)
(8)
(7)
(6)
(5)
(8)
(7)
(1)
GND
OUT
IN
IN
OUT
OUT
TPS201xY
EN
OUT
(2)
(3)
81
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
T max = 150°C
J
TOLERANCES ARE ±10%
(4)
(5)
(6)
ALL DIMENSIONS ARE IN MILS
72
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Input voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 7 V
I(IN)
O
I
Output voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
Input voltage range, V at EN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 7 V
Continuous output current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . internally limited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
+0.3 V
I(IN)
O
Operating virtual junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125°C
J
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
DISSIPATION RATING TABLE
DERATING FACTOR
T
≤ 25°C
T
A
= 70°C
T = 125°C
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING POWER RATING
A
D
PW
725 mW
700 mW
5.8 mW/°C
5.6 mW/°C
464 mW
448 mW
145 mW
140 mW
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
recommended operating conditions
MIN
2.7
0
MAX
5.5
5.5
0.2
0.6
1
UNIT
V
Input voltage, V
I(IN)
Input voltage, V at EN
I
V
TPS2010
TPS2011
TPS2012
TPS2013
0
0
Continuous output current, I
A
O
0
0
1.5
Operating virtual junction temperature, T
–40
125
°C
J
electrical characteristics over recommended operating junction temperature range, V
O
= 5.5 V,
I(IN)
I = rated current, EN = 0 V (unless otherwise noted)
power switch
TPS2010, TPS2011
TPS2012, TPS2013
†
PARAMETER
UNIT
TEST CONDITIONS
MIN
TYP
75
MAX
95
V
V
V
V
= 5.5 V,
= 4.5 V,
= 3 V,
T = 25°C
J
I(IN)
I(IN)
I(IN)
I(IN)
T = 25°C
J
80
110
175
215
1
On-state resistance
mΩ
T = 25°C
J
120
140
0.001
= 2.7 V,
T = 25°C
J
T = 25°C
J
Output leakage current
Output rise time
µA
ms
ms
EN = V
I(IN)
–40°C ≤ T ≤ 125°C
10
J
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
= 5.5 V,
= 2.7 V,
= 5.5 V,
= 2.7 V,
T = 25°C,
J
C
C
C
C
= 1 µF
= 1 µF
= 1 µF
= 1 µF
4
3.8
3.9
3.5
L
L
L
L
t
t
r
T = 25°C,
J
T = 25°C,
J
Output fall time
f
T = 25°C,
J
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input (EN)
TPS2010, TPS2011
TPS2012, TPS2013
PARAMETER
High-level input voltage
TEST CONDITIONS
UNIT
MIN
TYP
MAX
2.7 V ≤ V
4.5 V ≤ V
2.7 V ≤ V
≤ 5.5 V
≤ 5.5 V
< 4.5 V
2
V
V
I(IN)
I(IN)
I(IN)
0.8
0.4
0.5
20
Low-level input voltage
Input current
–0.5
µA
ms
EN = 0 V or EN = V
I(IN)
t
t
Propagation (delay) time, low-to-high-level output
Propagation (delay) time, high-to-low-level output
C
C
= 1 µF
= 1 µF
PLH
L
L
40
PHL
current limit
TPS2010, TPS2011
TPS2012, TPS2013
†
PARAMETER
UNIT
TEST CONDITIONS
MIN
0.22
0.66
1.1
TYP
0.4
1.2
2
MAX
0.6
1.8
3
TPS2010
TPS2011
TPS2012
TPS2013
T = 25°C,
J
V
I(IN)
= 5.5 V,
Short-circuit current
A
OUT connected to GND, device
enabled into short circuit
1.65
2.6
4.5
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
electrical characteristics over recommended operating junction temperature range, V
O
= 5.5 V,
I(IN)
I = rated current, EN = 0 V (unless otherwise noted) (continued)
supply current
TPS2010, TPS2011
TPS2012, TPS2013
PARAMETER
TEST CONDITIONS
T = 25°C
UNIT
MIN
TYP
MAX
1
0.015
J
Supply current, low-level output
µA
µA
EN = V
I(IN)
–40°C ≤ T ≤ 125°C
10
J
T = 25°C
J
73
100
100
EN = 0 V
Supply current, high-level output
–40°C ≤ T ≤ 125°C
J
electrical characteristics over recommended operating junction temperature range, V
= 5.5 V,
I(IN)
I = rated current, EN = 0 V, T = 25°C (unless otherwise noted)
O
J
power switch
TPS2010Y, TPS2011Y
TPS2012Y, TPS2013Y
†
PARAMETER
UNIT
TEST CONDITIONS
= 5.5 V,
MIN
TYP
75
MAX
V
V
V
V
I(IN)
I(IN)
I(IN)
I(IN)
= 4.5 V,
= 3 V,
80
On-state resistance
mΩ
120
140
0.001
4
= 2.7 V,
Output leakage current
Output rise time
µA
EN = V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
= 5.5 V,
= 2.7 V,
= 5.5 V,
= 2.7 V,
C
C
C
C
= 1 µF
= 1 µF
= 1 µF
= 1 µF
L
L
L
L
ms
3.8
3.9
3.5
Output fall time
ms
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
current limit
TPS2010Y, TPS2011Y
TPS2012Y, TPS2013Y
†
PARAMETER
UNIT
TEST CONDITIONS
= 5.5 V,
MIN
TYP
MAX
V
I(IN)
Short-circuit current
OUT connected to GND,
0.4
A
Device enabled into short circuit
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
supply current
TPS2010Y, TPS2011Y
TPS2012Y, TPS2013Y
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
0.015
73
MAX
Supply current, low-level output
Supply current, high-level output
µA
µA
EN = V
I(IN)
EN = 0 V
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
PARAMETER MEASUREMENT INFORMATION
6
4
6
4
2
0
2
0
6
4
6
4
2
2
0
0
–1
–1
0
1
2
3
4
5
6
7
8
9
0
5
10 15 20 25 30 35 40 45
t – Time – ms
t – Time – ms
Figure 1. Propagation Delay and
Rise Time With 1-µF Load, V = 5.5 V
Figure 2. Propagation Delay and
Fall Time With 1-µF Load, V = 5.5 V
I(IN)
I(IN)
4
4
2
0
2
0
4
2
0
4
2
0
–1
–1
0
1
2
3
4
5
6
7
8
9
0
5
10 15 20 25 30 35 40 45
t – Time – ms
t – Time – ms
Figure 3. Propagation Delay and
Rise Time With 1-µF Load, V = 2.7 V
Figure 4. Propagation Delay and
Fall Time With 1-µF Load, V = 2.7 V
I(IN)
I(IN)
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
PARAMETER MEASUREMENT INFORMATION
5
0
8
5
0
8
6
6
4
2
4
2
0
0
–1
–1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
t – Time – ms
t – Time – ms
Figure 6. TPS2011, Short-Circuit Current.
Figure 5. TPS2010, Short-Circuit Current.
Short is Applied to Enabled Device, V
= 5.5 V
Short is Applied to Enabled Device, V
= 5.5 V
I(IN)
I(IN)
5
0
8
5
0
8
6
4
2
6
4
2
0
0
–1
–1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
t – Time – ms
t – Time – ms
Figure 7. TPS2012, Short-Circuit Current.
Short is Applied to Enabled Device, V = 5.5 V
Figure 8. TPS2013 – Short-Circuit Current.
Short is Applied to Enabled Device, V = 5.5 V
I(IN)
I(IN)
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
PARAMETER MEASUREMENT INFORMATION
5
0
5
0
4
3
2
1
3
2
1
0
0
–1
–1
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
t – Time – ms
t – Time – ms
Figure 9. TPS2010 – Threshold Current,
Figure 10. TPS2011 – Threshold Current,
V
= 5.5 V
V
= 5.5 V
I(IN)
I(IN)
5
5
0
8
0
4
3
2
6
4
2
1
0
0
–1
–1
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
t – Time – ms
t – Time – ms
Figure 11. TPS2012 – Threshold Current,
= 5.5 V
Figure 12. TPS2013 – Threshold Current,
= 5.5 V
V
V
I(IN)
I(IN)
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
PARAMETER MEASUREMENT INFORMATION
3
2.5
2
TPS2013
TPS2012
1.5
1
TPS2011
TPS2010
0.5
0
–1
0
1
2
3
4
5
6
7
8
9
10
t – Time – ms
Figure 13. Turned-On (Enabled) Into Short Circuit, V
= 5.5 V
I(IN)
V
I
V
I(EN)
V
IN
IN
V
O
OUT
OUT
I
50% 50%
GND
TPS201x
GND
OUT
OUT
t
t
PHL
PLH
V
I
90% 90%
ENABLE
EN
C
L
10%
10%
t
V
O
GND
t
r
f
TEST CIRCUIT
VOLTAGE WAVEFORMS
Figure 14. Test Circuit and Voltage Waveforms
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
TYPICAL CHARACTERISTICS
TURN-ON DELAY TIME
vs
TURN-OFF DELAY TIME
vs
INPUT VOLTAGE
INPUT VOLTAGE
4.9
4.7
4.5
4.3
4.1
3.9
25
20
15
10
5
T
R
C
= 25°C
= 50 Ω
= 1 µF
J
L
L
T
R
C
= 25°C
= 50 Ω
= 1 µF
J
L
L
3.7
3.5
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
V – Input Voltage – V
I
V – Input Voltage – V
I
Figure 15
Figure 16
FALL TIME
vs
RISE TIME
vs
OUTPUT CURRENT
OUTPUT CURRENT
4
3.8
3.6
3.4
3.2
3
5
4.5
4
T
C
= 25°C
= 1 µF
T
C
= 25°C
= 1 µF
J
L
J
L
V = 5.5 V
I
3.5
3
V = 5.5 V
I
2.8
2.6
V = 2.7 V
I
V = 2.7 V
I
2.4
2.2
2
2.5
2
0
0.3
0.6
0.9
1.2
1.5
0
0.3
0.6
0.9
1.2
1.5
I
O
– Output Current – A
I
O
– Output Current – A
Figure 17
Figure 18
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
TYPICAL CHARACTERISTICS
SUPPLY CURRENT (OUTPUT DISABLED)
SUPPLY CURRENT (OUTPUT ENABLED)
vs
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
10
1
80
70
60
50
40
30
20
I
O
= 0 A
V = 5.5 V
I
0.1
V = 5.5 V
I
0.01
V = 2.7 V
I
V = 2.7 V
I
0.001
–50 –25
0
25
50
75
100
125
–50 –25
0
25
50
75
100
125
T
J
– Junction Temperature – °C
T
J
– Junction Temperature – °C
Figure 19
Figure 20
SUPPLY CURRENT (OUTPUT DISABLED)
SUPPLY CURRENT (OUTPUT ENABLED)
vs
vs
INPUT VOLTAGE
INPUT VOLTAGE
10
1
80
70
60
I
O
= 0 A
T
J
= 125°C
0.1
T
J
= 125°C
50
40
30
T
J
= 25°C
0.01
T
J
= 25°C
0.001
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
V – Input Voltage – V
I
V – Input Voltage – V
I
Figure 21
Figure 22
12
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TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
TYPICAL CHARACTERISTICS
ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
ON-STATE RESISTANCE
vs
INPUT VOLTAGE
190
170
150
130
110
90
140
130
120
110
100
90
T
J
= 25°C
V = 2.7 V
I
V = 3 V
I
80
V = 4.5 V
I
70
50
70
60
V = 5.5 V
I
–50 –25
0
25
50
75
100
125
2.5
3
3.5
4
4.5
5
5.5
T
J
– Junction Temperature – °C
V – Input Voltage – V
I
Figure 24
Figure 23
SHORT-CIRCUIT CURRENT
INPUT VOLTAGE TO OUTPUT VOLTAGE
vs
vs
INPUT VOLTAGE
INPUT VOLTAGE
3
0.25
0.2
TPS2013
2.5
2
TPS2012
TPS2011
0.15
0.1
I
= 1.5 A
O
1.5
I
= 1 A
O
1
I
= 600 mA
= 200 mA
O
0.05
0
0.5
0
I
O
TPS2010
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
V – Input Voltage – V
I
V – Input Voltage – V
I
Figure 25
Figure 26
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
TYPICAL CHARACTERISTICS
THRESHOLD TRIP CURRENT
SHORT-CIRCUIT CURRENT
vs
JUNCTION TEMPERATURE
vs
INPUT VOLTAGE
5.5
5
3
V
I(IN)
= 5.5 V
TPS2013
TPS2012
TPS2013
2.5
2
4.5
TPS2012
4
3.5
1.5
TPS2011
TPS2011
3
1
0.5
0
2.5
TPS2010
TPS2010
50
2
1.5
2.5
3
3.5
4
4.5
5
5.5
–50
–25
0
25
75
100
125
V – Input Voltage – V
I
T
J
– Junction Temperature – °C
Figure 27
Figure 28
APPLICATION INFORMATION
TPS2010D
External Load
2
3
5
6
Power Supply
2.7 V – 5.5 V
IN
IN
OUT
OUT
OUT
OUT
+
0.1 µF
7
8
1 µF
0.1 µF
4
EN
Load Enable
GND
1
Figure 29. Typical Application
power supply considerations
The TPS201x family has multiple inputs and outputs, which must be connected in parallel to minimize voltage
drop and prevent unnecessary power dissipation.
A 0.047-µF to 0.1-µF ceramic bypass capacitor between IN and GND, close to the device, is recommended.
A high-value electrolytic capacitor is also desirable when the output load is heavy or has large paralleled
capacitors. Bypassing the output with a 0.1-µF ceramic capacitor improves the immunity of the device to
electrostatic discharge (ESD).
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
APPLICATION INFORMATION
overcurrent
A sense FET is employed to check for overcurrent conditions. Unlike sense resistors and polyfuses, sense FETs
do not increase series resistance to the current path. When an overcurrent condition is detected, the device
maintains a constant output current and reduces the output voltage accordingly. Shutdown only occurs if the
fault is present long enough to activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output has been shorted before the
device is enabled or before V
immediately switches into a constant-current output.
has been applied (see Figure 30). The TPS201x senses the short and
I(IN)
Under the second condition, the short occurs while the device is enabled. At the instant the short occurs, very
high currents flow for a short time before the current-limit circuit can react (see Figures 5, 6, 7, and 8). After the
current-limit circuit has tripped, the device limits normally.
Under the third condition, the load has been gradually increased beyond the recommended operating current.
The current is permitted to rise until the current-limit threshold is reached (see Figures 9, 10, 11, and 12). The
TPS201x family is capable of delivering currents up to the current-limit threshold without damage. Once the
threshold has been reached, the device switches into its constant-current mode.
3
2.5
2
TPS2013
TPS2012
1.5
TPS2011
TPS2010
1
0.5
0
0
1
2
3
4
5
6
7
8
9
10
t – Time – ms
Figure 30. Turned-On (Enabled) Into Short Circuit, V
= 5.5 V
I(IN)
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
APPLICATION INFORMATION
power dissipation and junction temperature
The low on resistance of the N-channel MOSFET allows small surface-mount packages, such as SOIC or
TSSOP to pass large currents. The thermal resistances of these packages are high compared to that of power
packages; it is good design practice to check power dissipation and junction temperature. The first step is to
find r at the input voltage and operating temperature. As an initial estimate, use the highest operating ambient
on
temperature of interest and read r from Figure 23. Next calculate the power dissipation using:
on
2
P
r
I
on
D
Finally, calculate the junction temperature:
T
P
R
T
J
D
JA
A
Where:
T = Ambient temperature
A
R
= Thermal resistance SOIC = 172°C/W, TSSOP = 179°C/W
θJA
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,
repeat the calculation using the calculated value as the new estimate. Two or three iterations are generally
sufficient to get a reasonable answer.
thermal protection
Thermal protection is provided to prevent damage to the IC when heavy-overload or short-circuit faults are
present for extended periods of time. The faults force the TPS201x into its constant current mode, which causes
the voltage across the high-side switch to increase; under short-circuit conditions, the voltage across the switch
is equal to the input voltage. The increased dissipation causes the junction temperature to rise to dangerously
high levels. The protection circuit senses the junction temperature of the switch and shuts it off. The switch
remains off until the junction has dropped approximately 20°C. The switch continues to cycle in this manner until
the load fault or input power is removed.
ESD protection
All TPS201x terminals incorporate ESD-protection circuitry designed to withstand a 6-kV human-body-model
discharge as defined in MIL-STD-883C. Additionally, the output is protected from discharges up to 12 kV.
16
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