LME49860NA/NOPB [TI]
44V Dual High Performance, High Fidelity Audio Operational Amplifier 8-PDIP -40 to 85;
| 型号： | LME49860NA/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 44V Dual High Performance, High Fidelity Audio Operational Amplifier 8-PDIP -40 to 85 放大器 光电二极管 |
| 文件： | 总37页 (文件大小：1721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LME49860, LME49860MABD, LME49860NABD
www.ti.com
SNAS389C –JUNE 2007–REVISED APRIL 2013
LME49860 44V Dual High Performance, High Fidelity Audio Operational Amplifier
Check for Samples: LME49860, LME49860MABD, LME49860NABD
1
FEATURES
KEY SPECIFICATIONS
2
•
Easily Drives 600Ω Loads
•
•
Power Supply Voltage Range: ±2.5 to ±22V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
•
•
•
•
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (Typ)
SOIC or PDIP Packages
–
–
RL = 2kΩ: 0.00003% (Typ)
RL = 600Ω: 0.00003% (Typ)
•
•
•
•
•
•
•
Input Noise Density: 2.7 nV/√Hz (Typ)
Slew Rate: ±20V/μs (Typ)
APPLICATIONS
Gain Bandwidth Product: 55MHz (Typ)
Open Loop Gain (RL = 600Ω): 140dB (Typ)
Input Bias Current: 10nA (Typ)
•
•
•
•
•
•
Ultra High Quality Audio Amplification
High Fidelity Preamplifiers
High Fidelity Multimedia
Input Offset Voltage: 0.1mV (Typ)
DC Gain Linearity Error: 0.000009%
State of the Art Phono Pre Amps
High Performance Professional Audio
DESCRIPTION
High Fidelity Equalization and Crossover
Networks
The LME49860 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49860 audio operational
amplifiers deliver superior audio signal amplification
for outstanding audio performance. The LME49860
combines extremely low voltage noise density
(2.7nV/√Hz) with vanishingly low THD+N (0.00003%)
to easily satisfy the most demanding audio
applications.
•
•
•
High Performance Line Drivers
High Performance Line Receivers
High Fidelity Active Filters
TYPICAL APPLICATION
150W
3320W
3320W
150W
26.1 kW
+
909W
-
-
LME49860
+
LME49860
+
3.83 kW
+
100W
OUTPUT
22 nF//4.7 nF//500 pF
10 pF
INPUT
47 kW
47 nF//33 nF
Note: 1% metal film resistors, 5% polypropylene capacitors
Figure 1. Passively Equalized RIAA Phono Preamplifier
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LME49860, LME49860MABD, LME49860NABD
SNAS389C –JUNE 2007–REVISED APRIL 2013
www.ti.com
DESCRIPTION (CONTINUED)
To ensure that the most challenging loads are driven without compromise, the LME49860 has a high slew rate of
±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that
drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads.
The LME49860's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
The LME49860 has a wide supply range of ±2.5V to ±22V. Over this supply range the LME49860 maintains
excellent common-mode rejection, power supply rejection, and low input bias current. The LME49860 is unity
gain stable. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads
with values as high as 100pF.
The LME49860 is available in 8-lead narrow body SOIC and 8-lead PDIP packages. Demonstration boards are
available for each package.
Connection Diagrams
+
1
2
3
4
8 V
OUTPUT A
7 OUTPUT B
INVERTING INPUT A
A
B
-
+
+
-
NON-INVERTING
INPUT A
6
INVERTING INPUT B
NON-INVERTING
INPUT B
-
5
V
Figure 2. 8-Pin SOIC or PDIP
See D or P Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Product Folder Links: LME49860 LME49860MABD LME49860NABD
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SNAS389C –JUNE 2007–REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Power Supply Voltage (VS = V+ - V-)
Storage Temperature
46V
−65°C to 150°C
Input Voltage
Output Short Circuit(4)
(V-) - 0.7V to (V+) + 0.7V
Continuous
ESD Susceptibility(5)
2000V
ESD Susceptibility(6)
Pins 1, 4, 7 and 8
200V
100V
Pins 2, 3, 5 and 6
Junction Temperature
Thermal Resistance
150°C
θJA (SOIC)
θJA (PDIP)
145°C/W
102°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instrument Sales Office/ Distributors for availability and
specifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.
(5) Human body model, 100pF discharged through a 1.5kΩ resistor.
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).
OPERATING RATINGS
Temperature Range
TMIN ≤ TA ≤ TMAX
−40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ±22V
Supply Voltage Range
ELECTRICAL CHARACTERISTICS FOR THE LME49860(1)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
LME49860
Units
(Limits)
Symbol
Parameter
Conditions
Typical(2)
Limit(3)
AV = 1, VOUT = 3Vrms
RL = 2kΩ
RL = 600Ω
0.00003
0.00003
0.00005
55
Total Harmonic Distortion +
Noise
%
(max)
THD+N
0.00009
IMD
Intermodulation Distortion
Gain Bandwidth Product
AV = 1, VOUT = 3VRMS, Two-tone, 60Hz & 7kHz 4:1
%
GBWP
45
MHz
(min)
SR
Slew Rate
±20
±15
V/μs
(min)
VOUT = 1VP-P, –3dB
referenced to output magnitude at f = 1kHz
FPBW
ts
Full Power Bandwidth
Settling time
10
1.2
MHz
AV = –1, 10V step, CL = 100pF, 0.1% error range
μs
μVRMS
(max)
Equivalent Input Noise Voltage fBW = 20Hz to 20kHz
0.34
0.65
4.7
en
f = 1kHz
Equivalent Input Noise Density
f = 10Hz
2.7
6.4
nV/√H
z (max)
in
f = 1kHz
Current Noise Density
f = 10Hz
1.6
3.1
pA/√H
z
VS = ±18V
±0.12
±0.7
±0.7
mV
(max)
VOS
Offset Voltage
VS = ±22V
±0.14
mV
(max)
ΔVOS/ΔTe Average Input Offset Voltage
mp Drift vs Temperature
–40°C ≤ TA ≤ 85°C
0.2
μV/°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Typical specifications are specified at +25ºC and represent the most likely parametric norm.
(3) Tested limits are ensured to AOQL (Average Outgoing Quality Level).
Copyright © 2007–2013, Texas Instruments Incorporated
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SNAS389C –JUNE 2007–REVISED APRIL 2013
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ELECTRICAL CHARACTERISTICS FOR THE LME49860(1) (continued)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
LME49860
Units
(Limits)
Symbol
Parameter
Conditions
Typical(2)
Limit(3)
See(4)
VS = ±18V, Δ VS = 24V
VS = ±22V, Δ VS = 30V
dB
dB
(min)
Average Input Offset Voltage
Shift vs Power Supply Voltage
PSRR
120
120
110
fIN = 1kHz
fIN = 20kHz
118
112
ISOCH-CH
IB
Channel-to-Channel Isolation
Input Bias Current
dB
10
72
65
nA
(max)
VCM = 0V
ΔIOS/ΔTe
mp
Input Bias Current Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
VCM = 0V
0.1
11
nA/°C
Input Offset Current
nA
(max)
IOS
+17.1
–16.9
(V+) – 2.0 V (min)
(V-) + 2.0 V (min)
VS = ±18V
Common-Mode Input Voltage
Range
VIN-CM
+21.0
–20.8
(V+) – 2.0 V (min)
(V-) + 2.0 V (min)
VS = ±22V
VS = ±18V
-12V ≤ VCM ≤ 12V
120
dB
CMRR
ZIN
Common-Mode Rejection
VS = ±22V
-15V ≤ VCM ≤ 15V
dB
110
120
30
(min)
Differential Input Impedance
kΩ
Common Mode Input
Impedance
–10V<Vcm<10V
1000
MΩ
VS = ±18V
–12V≤Vout≤12V
RL = 600Ω
RL = 2kΩ
140
140
140
dB
dB
dB
RL = 10kΩ
AVOL
Open Loop Voltage Gain
VS = ±22V
–15V≤Vout≤15V
RL = 600Ω
RL = 2kΩ
dB
140
140
140
125
(min)
dB
dB
RL = 10kΩ
RL = 600Ω
VS = ±18V
VS = ±22V
±16.7
±20.4
V
±19.0
V (min)
RL = 2kΩ
VS = ±18V
VS = ±22V
Maximum Output Voltage
Swing
VOUTMAX
±17.0
±21.0
V
V
RL = 10kΩ
VS = ±18V
VS = ±22V
±17.1
±21.2
V
V
RL = 600Ω
VS = ±20V
VS = ±22V
mA
mA
(min)
IOUT
Output Current
±31
±37
±30
Instantaneous Short Circuit
Current
+53
–42
IOUT-CC
ROUT
CLOAD
IS
mA
Ω
fIN = 10kHz
Closed-Loop
Open-Loop
Output Impedance
0.01
13
Capacitive Load Drive
Overshoot
100pF
16
%
IOUT = 0mA
VS = ±18V
VS = ±22V
mA
mA
(max)
Total Quiescent Current
10.2
10.5
13
(4) PSRR is measured as follows: For VS = ±22V, VOS is measured at two supply voltages, ±7V and ±22V. PSRR = | 20log(ΔVOS/ΔVS) |.
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Copyright © 2007–2013, Texas Instruments Incorporated
LME49860, LME49860MABD, LME49860NABD
www.ti.com
SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 2kΩ
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
20
10
1
10m
20
10
100m
1
100m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 3.
Figure 4.
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 2kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
20
10
100m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 5.
Figure 6.
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 600Ω
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
1
10
20
10m
20
10m
1
10
100m
100m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 7.
Figure 8.
Copyright © 2007–2013, Texas Instruments Incorporated
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Product Folder Links: LME49860 LME49860MABD LME49860NABD
LME49860, LME49860MABD, LME49860NABD
SNAS389C –JUNE 2007–REVISED APRIL 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 600Ω
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10
10m
20
100m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 9.
Figure 10.
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 10kΩ
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
10m
20
100m
1
10
100m
1
20
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 11.
Figure 12.
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 10kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
20
10
100m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 13.
Figure 14.
6
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SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 2kΩ
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 15.
Figure 16.
THD+N vs Frequency
THD+N vs Frequency
VCC = 22V, VEE = –22V, VOUT = 3VRMS
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 2kΩ
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 17.
Figure 18.
THD+N vs Frequency
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
VCC = 22V, VEE = –22V, VOUT = 3VRMS
RL = 600Ω
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 19.
Figure 20.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 10kΩ
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 21.
Figure 22.
THD+N vs Frequency
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 2kΩ
VCC = 22V, VEE = –22V, VOUT = 3VRMS
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000007
20 50 100 200 500 1k 2k 5k 10k 20k
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
Hz
Figure 23.
Figure 24.
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 2kΩ
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.000007
0.00001
0.000007
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 25.
Figure 26.
8
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SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000006
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 27.
Figure 28.
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 600Ω
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000007
0.000006
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 29.
Figure 30.
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000006
100m
300m
500m 700m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 31.
Figure 32.
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LME49860, LME49860MABD, LME49860NABD
SNAS389C –JUNE 2007–REVISED APRIL 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 10kΩ
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000006
0.000006
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 33.
Figure 34.
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
Voltage Noise Density vs Frequency
100
10
1
100
0.01
V
V
= 30V
S
0.005
= 15V
CM
0.002
0.001
0.0005
10
0.0002
0.0001
2.7 nV/Hz
0.00005
0.00002
0.00001
1
100000
1000 10000
1
10
100
100m
300m
500m 700m
1
FREQUENCY (Hz)
OUTPUT VOLTAGE (V)
Figure 35.
Figure 36.
Crosstalk vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
Current Noise Density vs Frequency
AV = 0dB, RL = 2kΩ
100
10
1
100
+0
V
V
= 30V
S
-10
-20
= 15V
CM
-30
-40
-50
-60
10
-70
-80
-90
-100
-110
-120
-130
1.6 pA/Hz
100000
1000 10000
1
1
10
100
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 37.
Figure 38.
10
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SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Crosstalk vs Frequency
VCC = 15V, VEE = –15V, VOUT = 10VRMS
AV = 0dB, RL = 2kΩ
Crosstalk vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
AV = 0dB, RL = 2kΩ
+0
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-100
-110
-120
-130
-110
-120
-130
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 39.
Figure 40.
Crosstalk vs Frequency
VCC = 12V, VEE = –12V, VOUT = 10VRMS
AV = 0dB, RL = 2kΩ
Crosstalk vs Frequency
VCC = 22V, VEE = –22V, VOUT = 3VRMS
AV = 0dB, RL = 2kΩ
+0
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-100
-110
-120
-130
-110
-120
-130
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 41.
Figure 42.
Crosstalk vs Frequency
VCC = 22V, VEE = –22V, VOUT = 10VRMS
AV = 0dB, RL = 2kΩ
Crosstalk vs Frequency
VCC = 2.5V, VEE = –2.5V, VOUT = 1VRMS
AV = 0dB, RL = 2kΩ
+0
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-100
-110
-120
-130
-110
-120
-130
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 43.
Figure 44.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Crosstalk vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
AV = 0dB, RL = 600Ω
Crosstalk vs Frequency
VCC = 15V, VEE = –15V, VOUT = 10VRMS
AV = 0dB, RL = 600Ω
+0
+0
-10
-20
-10
-20
-30
-40
-50
-60
-70
-80
-90
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-100
-110
-120
-130
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 45.
Figure 46.
Crosstalk vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
AV = 0dB, RL = 600Ω
Crosstalk vs Frequency
VCC = 12V, VEE = –12V, VOUT = 10VRMS
AV = 0dB, RL = 600Ω
+0
+0
-10
-20
-10
-20
-30
-40
-50
-60
-70
-80
-90
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-100
-110
-120
-130
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 47.
Figure 48.
Crosstalk vs Frequency
VCC = 22V, VEE = –22V, VOUT = 3VRMS
AV = 0dB, RL = 600Ω
Crosstalk vs Frequency
VCC = 22V, VEE = –22V, VOUT = 10VRMS
AV = 0dB, RL = 600Ω
+0
+0
-10
-20
-10
-20
-30
-40
-50
-60
-70
-80
-90
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-100
-110
-120
-130
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 49.
Figure 50.
12
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SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Crosstalk vs Frequency
VCC = 2.5V, VEE = –2.5V, VOUT = 1VRMS
AV = 0dB, RL = 600Ω
Crosstalk vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
AV = 0dB, RL = 10kΩ
+0
+0
-10
-10
-20
-30
-40
-50
-60
-70
-80
-90
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
20 50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 51.
Figure 52.
Crosstalk vs Frequency
VCC = 15V, VEE = –15V, VOUT = 10VRMS
AV = 0dB, RL = 10kΩ
Crosstalk vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
AV = 0dB, RL = 10kΩ
+0
+0
-10
-20
-10
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 53.
Figure 54.
Crosstalk vs Frequency
Crosstalk vs Frequency
VCC = 12V, VEE = –12V, VOUT = 10VRMS
VCC = 22V, VEE = –22V, VOUT = 3VRMS
AV = 0dB, RL = 10kΩ
AV = 0dB, RL = 10kΩ
+0
+0
-10
-20
-10
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
FREQUENCY (Hz)
Figure 55.
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
Figure 56.
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LME49860, LME49860MABD, LME49860NABD
SNAS389C –JUNE 2007–REVISED APRIL 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Crosstalk vs Frequency
VCC = 22V, VEE = –22V, VOUT = 10VRMS
AV = 0dB, RL = 10kΩ
Crosstalk vs Frequency
VCC = 2.5V, VEE = –2.5V, VOUT = 1VRMS
AV = 0dB, RL = 10kΩ
+0
+0
-10
-20
-10
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 57.
Figure 58.
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ, VRIPPLE = 200mVpp
+0
-10
+0
-10
-20
-30
-40
-50
-60
-70
-20
-30
-40
-50
-60
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 59.
Figure 60.
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ, VRIPPLE = 200mVpp
+0
-10
+0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 61.
Figure 62.
14
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SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ, VRIPPLE = 200mVpp
+0
-10
-20
-30
-40
-50
-60
-70
-80
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 63.
Figure 64.
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ, VRIPPLE = 200mVpp
+0
-10
-20
+0
-10
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 65.
Figure 66.
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω, VRIPPLE = 200mVpp
+0
-10
+0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20 50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 67.
Figure 68.
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www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω, VRIPPLE = 200mVpp
+0
-10
+0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 69.
Figure 70.
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω, VRIPPLE = 200mVpp
+0
-10
+0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 71.
Figure 72.
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω, VRIPPLE = 200mVpp
+0
-10
+0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 73.
Figure 74.
16
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SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ, VRIPPLE = 200mVpp
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
+0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-120
-130
-140
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 75.
Figure 76.
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 10kΩ, VRIPPLE = 200mVpp
+0
-10
+0
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20
50 100 200 500 1k 2k
5k 10k 20k
20
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 77.
Figure 78.
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ, VRIPPLE = 200mVpp
+0
+0
-10
-10
-20
-30
-20
-30
-40
-40
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-150
-100
-110
-120
-130
-140
-150
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 79.
Figure 80.
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LME49860, LME49860MABD, LME49860NABD
SNAS389C –JUNE 2007–REVISED APRIL 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ, VRIPPLE = 200mVpp
+0
-10
-20
-30
-40
-50
-60
-70
+0
-10
-20
-30
-40
-50
-60
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
20 50 100 200 500 1k 2k
5k 10k 20k
20 50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 81.
Figure 82.
CMRR vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ
CMRR vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-100
-120
10
-120
10
100
1k
10k
100k 200k
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 83.
Figure 84.
CMRR vs Frequency
CMRR vs Frequency
VCC = 22V, VEE = –22V
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
RL = 2kΩ
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-100
-120
10
-120
10
100
1k
10k
100k 200k
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 85.
Figure 86.
18
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LME49860, LME49860MABD, LME49860NABD
www.ti.com
SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CMRR vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω
CMRR vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 87.
Figure 88.
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
0
-20
-40
-60
-80
0
-20
-40
-60
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 89.
Figure 90.
CMRR vs Frequency
CMRR vs Frequency
VCC = 15V, VEE = –15V
VCC = 12V, VEE = –12V
RL = 10kΩ
RL = 10kΩ
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 91.
Figure 92.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 93.
Figure 94.
Output Voltage vs Load Resistance
VCC = 15V, VEE = –15V
THD+N = 1%
Output Voltage vs Load Resistance
VCC = 12V, VEE = –12V
THD+N = 1%
11.5
9.5
9.0
8.5
8.0
11.0
10.5
10.0
9.5
7.5
7.0
9.0
500
600
800
2k
5k
10k
500
600
800
2k
5k
10k
LOAD RESISTANCE (W)
LOAD RESISTANCE (W)
Figure 95.
Figure 96.
Output Voltage vs Load Resistance
VCC = 22V, VEE = –22V
THD+N = 1%
Output Voltage vs Load Resistance
VCC = 2.5V, VEE = –2.5V
THD+N = 1%
1.25
13.5
13.0
12.5
12.0
1.00
0.75
11.5
11.0
10.5
10.0
0.25
0.50
0.00
500
600
800
2k
5k
10k
500
600
800
2k
5k
10k
LOAD RESISTANCE (W)
LOAD RESISTANCE (W)
Figure 97.
Figure 98.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Voltage vs Total Power Supply Voltage
Output Voltage vs Total Power Supply Voltage
RL = 2kΩ, THD+N = 1%
RL = 600Ω, THD+N = 1%
Figure 99.
Figure 100.
Output Voltage vs Total Power Supply Voltage
Power Supply Current vs Total Power Supply Voltage
RL = 10kΩ, THD+N = 1%
RL = 2kΩ
Figure 101.
Figure 102.
Power Supply Current vs Total Power Supply Voltage
Power Supply Current vs Total Power Supply Voltage
RL = 600Ω
RL = 10kΩ
Figure 103.
Figure 104.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Full Power Bandwidth vs Frequency
Gain Phase vs Frequency
2
0
180
160
-2
-4
140
120
100
80
0 dB = 1 V
P-P
-6
-8
-10
60
-12
-14
-16
-18
40
20
0
-20
10
1000
100000
10000000
1000000 100000000
1
10 100 1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
100
10000
FREQUENCY (Hz)
Figure 105.
Figure 106.
Small-Signal Transient Response
AV = 1, CL = 10pF
Small-Signal Transient Response
AV = 1, CL = 100pF
D: 0.00s
D: 0.00V
D: 0.00s
D: 0.00V
@: -1.01 ms @: -80.0 mV
@: -1.01 ms @: -80.0 mV
1
1
Ch1 50.0 mV
M 200 ns
A
Ch1 2.00 mV
Ch1 50.0 mV
M 200 ns
A Ch1 2.00 mV
50.40%
50.40%
Figure 107.
Figure 108.
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SNAS389C –JUNE 2007–REVISED APRIL 2013
APPLICATION INFORMATION
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by LME49860 is below the capabilities of all commercially
available equipment. This makes distortion measurements just slightly more difficult than simply connecting a
distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49860’s low residual distortion is an input referred internal error. As shown in Figure 109, adding the
10Ω resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise
gain. The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-
loop gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means that
measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the
value of R1 low as shown in Figure 109.
This technique is verified by duplicating the measurements with high closed loop gain and/or making the
measurements at high frequencies. Doing so produces distortion components that are within the measurement
equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described
circuit connected to an Audio Precision System Two Cascade.
R2
1000W
-
LME49860
R1
10W
Distortion Signal Gain = 1+(R2/R1)
+
Analyzer Input
Generator Output
Audio Precision
System Two
Cascade
Actual Distortion = AP Value/100
Figure 109. THD+N and IMD Distortion Test Circuit
The LME49860 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF
will cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is
accidentally shorted.
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Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for
power line noise.
Figure 110. Noise Measurement Circuit
Total Gain: 115 dB @f = 1 kHz
Input Referred Noise Voltage: en = V0/560,000 (V)
Figure 111. RIAA Preamp Voltage Gain,
RIAA Deviation vs Frequency
Figure 112. Flat Amp Voltage Gain vs Frequency
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SNAS389C –JUNE 2007–REVISED APRIL 2013
TYPICAL APPLICATIONS
Figure 114. NAB Preamp Voltage Gain vs
Frequency
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Figure 113. NAB Preamp
VO = V1 + V2 − V3 − V4
VO = V1–V2
Figure 116. Adder/Subtracter
Figure 115. Balanced to Single Ended Converter
Figure 117. Sine Wave Oscillator
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Illustration is f0 = 1 kHz
Illustration is f0 = 1 kHz
Figure 118. Second Order High Pass Filter
(Butterworth)
Figure 119. Second Order Low Pass Filter
(Butterworth)
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
Figure 120. State Variable Filter
Figure 121. AC/DC Converter
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SNAS389C –JUNE 2007–REVISED APRIL 2013
Figure 122. 2 Channel Panning Circuit (Pan Pot)
Figure 123. Line Driver
Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
Figure 124. Tone Control
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Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 125. RIAA Preamp
Illustration is:
V0 = 101(V2 − V1)
Figure 126. Balanced Input Mic Amp
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SNAS389C –JUNE 2007–REVISED APRIL 2013
Figure 127. 10 Band Graphic Equalizer
fo (Hz)
32
C1
C2
R1
R2
0.12μF
0.056μF
0.033μF
0.015μF
8200pF
3900pF
2000pF
1100pF
510pF
4.7μF
75kΩ
68kΩ
62kΩ
68kΩ
62kΩ
68kΩ
68kΩ
62kΩ
68kΩ
51kΩ
500Ω
510Ω
510Ω
470Ω
470Ω
470Ω
470Ω
470Ω
510Ω
510Ω
64
3.3μF
125
250
500
1k
1.5μF
0.82μF
0.39μF
0.22μF
0.1μF
2k
4k
0.056μF
0.022μF
0.012μF
8k
16k
330pF
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REVISION HISTORY
Rev
1.0
1.1
C
Date
Description
06/01/07
06/11/07
04/05/13
Initial release.
Added the LME49860MA and LME49860NA Top Mark Information.
Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM
www.ti.com
12-Feb-2014
PACKAGING INFORMATION
Orderable Device
LME49860MA/NOPB
LME49860MAX/NOPB
LME49860NA/NOPB
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
ACTIVE
SOIC
SOIC
PDIP
D
8
8
8
95
Green (RoHS
& no Sb/Br)
SN | CU SN
SN | CU SN
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-NA-UNLIM
L49860
MA
ACTIVE
ACTIVE
D
P
2500
40
Green (RoHS
& no Sb/Br)
-40 to 85
L49860
MA
Green (RoHS
& no Sb/Br)
-40 to 85
LME
49860NA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
12-Feb-2014
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LME49860MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOIC
SPQ
Length (mm) Width (mm) Height (mm)
349.0 337.0 45.0
LME49860MAX/NOPB
D
8
2500
Pack Materials-Page 2
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相关型号：
LME49870MA/NOPB
44V Single High Performance, High Fidelity Audio Operational Amplifier 8-SOIC -40 to 85
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