BQ24261M_15 [TI]
bq2426x 3-A, 30-V, Host-Controlled Single-Input, Single-Cell Switched-Mode Li-Ion Battery Charger With Power-Path Management and USB-OTG Support;型号: | BQ24261M_15 |
厂家: | TEXAS INSTRUMENTS |
描述: | bq2426x 3-A, 30-V, Host-Controlled Single-Input, Single-Cell Switched-Mode Li-Ion Battery Charger With Power-Path Management and USB-OTG Support 电池 |
文件: | 总56页 (文件大小:6897K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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bq24260, bq24261, bq24261M, bq24262
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
bq2426x 3-A, 30-V, Host-Controlled Single-Input, Single-Cell Switched-Mode Li-Ion Battery
Charger With Power-Path Management and USB-OTG Support
Not Recommended for New Designs : bq24260, bq24261
1 Features
2 Applications
1
•
•
•
•
Charge Time Optimizer (Enhanced CC/CV
Transition) for Faster Charging
•
•
•
•
•
Smart Phones and Tablets
Handheld Products
Integrated FETs for up to 3-A Charge Rate at 5%
Accuracy and 93% Peak Efficiency
Power Banks and External Battery Packs
Small Power Tools
Boost Capability to Supply 5 V at 1 A at IN for
USB OTG Supply
Portable Media Players and Gaming
Integrated 17-mΩ Power-Path MOSFET and
Optional BGATE Control to Maximize Battery Life
and Instantly Start up From a Deeply Discharged
Battery or No Battery
3 Description
The bq24260/bq24261/bq24261M/bq24262 is
a
highly integrated single-cell Li-Ion battery charger and
system power path management device that supports
operation from either a USB port or wall adapter
supply. The power-path feature allows the
bq24260/1/1M/2 to power the system from a high
efficiency DC-DC converter while simultaneously and
independently charging the battery. The power path
also permits the battery to supplement the system
current requirements when the adapter cannot. Many
features are programmable using the I2C interface.
•
•
30-V Input Rating With Overvoltage Protection
Supports 5-V USB 2.0/3.0 and 12-V USB Power
Delivery (bq24261/1M)
Small Solution Size In a 2.4-mm × 2.4-mm 36-Pin
WCSP or 4-mm × 4-mm 24-Pin QFN Package
–
Total Charging Solution Can be 50 mm2 or
Less With WCSP
To
support
USB
OTG
applications,
the
•
Safe and Accurate Battery-Management
Functions Programmed Using I2C Interface
bq24260/1/1M/2 is configurable to boost the battery
voltage to 5 V and supply up to 1 A at the input. The
battery is charged with three phases: precharge,
constant current, and constant voltage. Thermal
regulation prevents the die temperature from
exceeding 125°C. Additionally, a JEITA-compatible
battery pack thermistor monitoring input (TS) is
included to prevent the battery from charging outside
of its safe temperature range.
–
Charge Voltage, Current, Termination
Threshold, Input Current Limit, VIN_DPM
Threshold
–
–
–
Voltage-Based, JEITA-Compatible NTC
Monitoring Input
Thermal Regulation Protection for Input
Current Control
Device Information(1)
Thermal Shutdown and Protection
PART NUMBER
PACKAGE
DSBGA (36)
QFN (24)
BODY SIZE (NOM)
2.40 mm × 2.40 mm
4.00 mm × 4.00 mm
bq24260/1/1M/2
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
4 Application Schematic
IN
SW
VBUS
Charge Time Optimizer Effect
Charge Cycle 4000mAh Battery 2A Charge Rate
D+
D-
System
Load
GND
PGND
3
BOOT
4.4
4.2
4
`
PMID
2.5
2
SYS
`
3.8
3.6
3.4
3.2
3
D+
D-
More Energy
Delivered to
the Battery
in the Same
Time
BAT
1.5
1
CD
SDA
SCL
bq24260
HOST
INT
PACK+
TEMP
TS
2.8
2.6
2.4
VDRV
0.5
PACK-
V I/O
0
0
2000
4000
6000
8000
10000 11000
IBAT_Traditional
Time (sec)
VBAT_CTO
VBAT_Traditional
IBAT_CTO
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
www.ti.com
Table of Contents
9.4 Device Functional Modes........................................ 16
9.5 Programming........................................................... 27
9.6 Register Maps......................................................... 30
10 Application and Implementation........................ 38
10.1 Application Information.......................................... 38
10.2 Typical Application ................................................ 38
11 Power Supply Recommendations ..................... 43
11.1 Requirements for SYS Output .............................. 43
11.2 Requirements for Charging................................... 43
12 Layout................................................................... 43
12.1 Layout Guidelines ................................................. 43
12.2 Layout Example .................................................... 44
13 Device and Documentation Support ................. 45
13.1 Documentation Support ....................................... 45
13.2 Related Links ........................................................ 45
13.3 Trademarks........................................................... 45
13.4 Electrostatic Discharge Caution............................ 45
13.5 Glossary................................................................ 45
1
2
3
4
5
6
7
8
Features.................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Application Schematic .......................................... 1
Revision History..................................................... 2
Device Comparison Table..................................... 4
Pin Configuration and Functions......................... 4
Specifications......................................................... 6
8.1 Absolute Maximum Ratings ...................................... 6
8.2 ESD Ratings.............................................................. 6
8.3 Recommended Operating Conditions....................... 6
8.4 Thermal Information ................................................. 7
8.5 Electrical Characteristics........................................... 7
8.6 Switching Characteristics........................................ 11
8.7 Typical Characteristics............................................ 11
Detailed Description ............................................ 13
9.1 Overview ................................................................. 13
9.2 Functional Block Diagram ....................................... 14
9.3 Feature Description................................................. 16
9
14 Mechanical, Packaging, and Orderable
Information ........................................................... 45
5 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (March 2015) to Revision D
Page
•
•
•
•
•
•
•
•
•
Added device bq24261M ....................................................................................................................................................... 1
Changed minimum capacitance for DRV pin from 1 µF to 2.2 µF. ........................................................................................ 5
Changed absolute max voltage for DRV, SYS from 5.0 V to 5.5 V ....................................................................................... 6
Changed VSYSREG(HI) from VBATREG+1.6% to original VBATREG+2.5% typical ........................................................... 7
Added bq24261M VSYSREG(HI) = 1.6% typical .................................................................................................................. 7
Changed ILIM(DISCH) from 9 A to original 6 A typical .......................................................................................................... 7
Added bq24261M ILIM(DISCH) = 9 A typical ........................................................................................................................ 7
Added Explanation for Reg05h B4 Force D+/D- ................................................................................................................. 36
Changed bypass capacitor value from 1 µF to 2.2 µF in the Typical Application Circuit .................................................... 38
Changes from Revision B (March 2014) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
Changes from Revision A (January 2014) to Revision B
Page
•
•
•
•
•
•
Changed global format to new data sheet schema................................................................................................................ 1
Changed device number from "bq24262A" to "bq24262" throughout .................................................................................... 1
Changed VBATREG accuracy for 0-125C, added 0-85C, and added mV specific numbers to Elec Charateristics table. ........ 8
Added Switching Characteristics .......................................................................................................................................... 11
Added Power Supply Recommendations............................................................................................................................. 43
Added Device and Documentation Support ......................................................................................................................... 45
2
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Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
•
Changed location of Ordering Information to Mechanical, Packaging, and Orderable Information ..................................... 45
Changes from Original (December 2013) to Revision A
Page
•
•
•
•
•
Added specifications to Electrical Characteristics table pertaining to RGE package............................................................. 7
Added separate lines for IINLIM current for YFF and RGE packages. ..................................................................................... 9
Changed VDO_DRV spec MAX voltage from "500 mV" to "450 mV"......................................................................................... 9
Changed the wording of the Safety Timer description for clarification. ............................................................................... 22
Changed text in the F/S Mode Protocol section from "...to either transmit data to the slave (R/W bit 1) or receive
data from the slave (R/W bit 0" to "...to either transmit data to the slave (R/W bit 0) or receive data from the slave
(R/W bit 1" for clarification.................................................................................................................................................... 28
Copyright © 2013–2015, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
www.ti.com
6 Device Comparison Table
SYSTEM
REGULATION
VOLTAGE
(TYP)
BATTERY
DISCHARGE
CURRENT LIMIT
(MIN)
DEFAULT
VBATREG
PART
NUMBER
CE BIT
DEFAULT
D+/D–
DETECTION
TIMERS (SAFETY
AND WATCHDOG)
OVP
0
bq24260
bq24261
10.5
14
Yes
No
Yes
Yes
4 A
4 A
VBATREG + 2.5%
3.6 V
3.6 V
(Charge Enabled)
1
(Charge
Disabled)
VBATREG + 2.5%
1
BQ24261M
bq24262
14
(Charge
Disabled)
No
No
Yes
No
6 A
4 A
VBATREG + 1.6%
VBATREG + 2.5%
3.6 V
4.2 V
0
6.5
(Charge Enabled)
7 Pin Configuration and Functions
YFF Package
36-Pin DSBGA
bq24260 (Top View)
bq24261/2 (Top View)
1
2
3
4
5
6
1
2
3
4
5
6
PGND
PGND
SW
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
A
B
C
D
E
F
A
B
C
D
E
F
PMID
SW
IN
SW
IN
SW
CD
SW
PMID
SW
IN
SW
IN
SW
IN
SW
CD
SW
BOOT
DRV
SYS
IN
IN
BOOT
IN
SDA
STAT
SCL
INT
D–
D+
TS
SDA
SCL
INT
N.C.
SYS
PSEL
SYS
TS
DRV
SYS
SYS
SYS
SYS
STAT
SYS
AGND
BGATE
BAT
BAT
BAT
BAT
AGND
BGATE
BAT
BAT
BAT
BAT
RGE Package
24-Pin VQFN
(Top View)
PMID
1
18 IN
PMID
1
18 IN
BOOT
DRV
2
3
17 SDA
16 SCL
BOOT
DRV
2
3
17 SDA
16 SCL
bq24260
bq24261
bq24262
CD
TS
4
5
15 D–
14 D+
CD
TS
4
5
15 N.C.
14 PSEL
SYS
6
13 STAT
SYS
6
13 STAT
4
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Copyright © 2013–2015, Texas Instruments Incorporated
Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
Pin Functions
PIN
bq24260
DSBGA VQFN DSBGA VQFN
bq24261/1M/2
I/O
DESCRIPTION
NAME
AGND
BAT
F1
12, 20
8, 9
F1
12, 20
8, 9
Analog Ground. Connect to the thermal pad (for QFN only) and the ground plane of the circuit.
Battery Connection. Connect to the positive terminal of the battery. Bypass BAT to GND with at
least 1 μF of ceramic capacitance. See Application and Implementation for additional details.
F3-F6
F3-F6
I/O
O
BGATE
External Discharge MOSFET Gate Connection. BGATE drives an external P-Channel MOSFET
to provide a very low resistance discharge path. Connect BGATE to the gate of the external
MOSFET. BGATE is low during high impedance mode or when no input is connected. If no
external FET is required, leave BGATE disconnected. Do not connect BGATE to GND.
F2
11
F2
11
BOOT
CD
High Side MOSFET Gate Driver Supply. Connect 0.033 µF of ceramic capacitance (voltage
rating > 10 V) from BOOT to SW to supply the gate drive for the high side MOSFET.
C6
C5
2
4
C6
C5
2
4
I
I
IC Hardware Disable Input. Drive CD high to place the bq24260/1/1M/2 in hi-z mode. Drive CD
low for normal operation. CD is pulled low internally with 100 kΩ.
D+
D–
D4
D3
14
15
–
–
–
–
I
I
D+ and D– Connections for USB Input Adapter Detection. When a source is initially connected
to the input during DEFAULT mode, and a short is detected between D+ and D–, the input
current limit is set to 1.5 A. If a short is not detected, the USB100 mode is selected.
DRV
Gate Drive Supply. DRV is the bias supply for the gate drive of the internal MOSFETs. Bypass
DRV to PGND with a 10-V or higher rated, +/-10%, X5R or better 2.2 µF ceramic capacitor. DRV
may be used to drive external loads up to 10mA. DRV is active whenever the input is connected
and VIN > VUVLO and VIN > (VBAT + VSLP).
D6
3
D6
3
O
I
IN
DC Input Power Supply. IN is connected to the external DC supply (AC adapter or USB port).
Bypass IN to PGND with at least a 4.7 μF of ceramic capacitance.
C1-C4
18, 19
C1-C4
18, 19
INT
Status Output. INT is an open-drain output that signals charging status and fault interrupts. INT
pulls low during charging. INT is high impedance when charging is complete, disabled or the
charger is in high impedance mode. When a fault occurs, a 128-μs pulse is sent out as an
interrupt for the host. INT is enabled /disabled using the EN_STAT bit in the control register.
Connect INT to a logic rail through a 100-kΩ resistor to communicate with the host processor.
E2
10
E2
10
O
PGND
PMID
A1-A6
B1
21,22
1
A1-A6
B1
21,22
1
–
I
Ground terminal. Connect to the thermal pad (for QFN only) and the ground plane of the circuit.
High Side Bypass Connection. Connect at least 1 µF of ceramic capacitance from PMID to
PGND as close to the PMID and PGND terminals as possible.
PSEL
Hardware Input Current Limit. In DEFAULT mode, PSEL selects the input current limit. Drive
PSEL high to select USB100 (bq24261/1M) or USB500 (bq24262) mode, drive PSEL low to
select 1.5 A mode.
–
–
D4
14
I
I2C Interface Clock. Connect SCL to the logic rail through a 10-kΩ resistor. Do not leave floating.
I2C Interface Data. Connect SDA to the logic rail through a 10-kΩ resistor.
SCL
D2
D1
16
17
D2
D1
16
17
I
SDA
STAT
I/O
Status Output. STAT is an open-drain output that signals charging status and fault interrupts.
STAT pulls low during charging. STAT is high impedance when charging is complete, disabled
or the charger is high impedance mode. When a fault occurs, a 128-μs pulse is sent out as an
interrupt for the host. STAT is enabled /disabled using the EN_STAT bit in the control register.
Connect STAT to a logic rail using an LED for visual indication or through a 100-kΩ resistor to
communicate with the host processor.
E1
13
E1
13
O
SW
Inductor Connection. Connect to the switched side of the external inductor. The inductance must
be between 1.5 µH and 2.2 µH.
B2-B6
E3-E6
23, 24
6, 7
B2-B6
E3-E6
23, 24
6, 7
O
I
SYS
System Voltage Sense and Charger FET Connection. Connect SYS to the system output at the
output bulk capacitors. Bypass SYS locally with at least 10 μF of ceramic capacitance. The SYS
rail must have at least 20 µF of total capacitance for stable operation. See Application and
Implementation for additional details.
TS
Battery Pack NTC Monitor. Connect TS to the center tap of a resistor divider from DRV to GND.
The NTC is connected from TS to GND. The TS function provides 4 thresholds for JEITA
compatibility. TS faults are reported by the I2C interface. Pull TS high to VDRV to disable the TS
function if unused. See the NTC Monitor section for more details on operation and selecting the
resistor values.
D5
–
5
–
D5
–
5
–
I
Thermal
Pad
There is an internal electrical connection between the exposed thermal pad and the PGND
terminal of the device. The thermal pad must be connected to the same potential as the PGND
terminal on the printed circuit board. Do not use the thermal pad as the primary ground input for
the device. PGND terminal must be connected to ground at all times.
–
Copyright © 2013–2015, Texas Instruments Incorporated
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Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
www.ti.com
8 Specifications
8.1 Absolute Maximum Ratings(1)
over operating free-air temperature range (unless otherwise noted)
MIN
–1.3
–0.3
–0.7
–0.3
–0.3
–0.3
MAX
30
30
20
5
UNIT
IN
BOOT, PMID
Terminal Voltage (with respect to
PGND)
SW
V
BAT, BGATE, CD, INT, PSEL, SDA, SCL, STAT, TS
DRV, SYS
5.5
5
BOOT to SW
V
A
A
SW
4.5
3.5
6
Output Current (Continuous)
SYS, BAT (charging/ discharging)
BAT (discharging)
Output Current (<20 ms pulse,
<10% duty cycle)
Input Current (Continuous)
Output Sink Current
2.75
10
A
STAT, INT
mA
Operating free-air temperature
Junction temperature, TJ
Storage temperature, Tstg
–40
–40
–40
85
°C
°C
125
300
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
8.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
4.2
4.2
4.2
4.2
NOM
MAX UNIT
28(1)
IN voltage range
IN operating voltage range (bq24260)
IN operating voltage range (bq24261/1M)
IN operating voltage range (bq24262)
Input current, IN input
10
V
VIN
13.2
6.0
IIN
2.5
3
A
A
ISW
Output Current from SW, DC
IBAT, ISYS Charging
Discharging, using internal battery FET
Operating junction temperature range
3
A
3
TJ
0
125
°C
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOT or SW terminals. A
tight layout minimizes switching noise.
6
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Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
8.4 Thermal Information
bq2426x
THERMAL METRIC(1)
YFF [DSBGA]
RGE [VQFN]
24 PINS
32.6
UNIT
36 PINS
55.8
0.5
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
RθJCtop
RθJB
30.5
10
3.3
°C/W
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
2.6
0.4
ψJB
9.9
9.3
RθJCbot
N/A
2.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENTS
VUVLO < VIN < VOVP and VIN > VBAT + VSLP
PWM switching
15
YFF Package: VUVLO < VIN < VOVP and VIN > VBAT + VSLP
PWM NOT switching
6.5
mA
μA
μA
IIN
Supply current for control
RGE Package: VUVLO < VIN < VOVP and VIN > VBAT + VSLP
PWM NOT switching
6.65
250
15
0°C < TJ < 85°C, VIN = 5 V, Hi-Z Mode
0°C < TJ < 85°C, VBAT = 4.2 V, VIN = 5 V,
SCL, SDA = 0 V or 1.8 V, Hi-Z Mode
Battery discharge current in
High Impedance mode, (BAT,
SW, SYS)
YFF Package: 0°C < TJ < 85°C, VBAT = 4.2 V, VIN = 0 V,
SCL, SDA = 0 V or 1.8 V
IBAT_HIZ
77
80
RGE Package: 0°C < TJ < 85°C, VBAT = 4.2 V, VIN = 0 V,
SCL, SDA = 0 V or 1.8 V
POWER-PATH MANAGEMENT
VSYSREG(LO) System Regulation Voltage
VMINSYS
+ 120
mV
VMINSYS
+ 80 mV + 100 mV
VMINSYS
VBAT < VMINSYS
V
V
VBATREG
+2.2%
VBATREG VBATREG
+2.5% +2.77%
bq24260/1/2 - Battery FET turned off, no charging, VBAT > 3.5
V
VSYSREG(HI)
System Regulation Voltage
VBATREG
+1.4%
VBATREG VBATREG
bq24261M - Battery FET turned off, no charging, VBAT > 3.5 V
VBAT + VDO(SYS_BAT) < 3.5 V
+1.6%
+1.77%
Minimum System Voltage
Regulation Threshold
VMINSYS
3.44
3.5
3.55
V
ms
V
Deglitch time, VMINSYS
comparator rising
tDGL(MINSYS_CMP)
8
Enter supplement mode
threshold
VBAT – 20
mV
VBSUP1
VBAT > VBUVLO
VBAT > VBUVLO
Exit supplement mode
threshold
VBAT – 5
mV
VBSUP2
V
bq24260/1/2 - VLIM(BGATE) = VBAT – VSYS
bq24261M - VLIM(BGATE) = VBAT – VSYS
4
6
6
9
Current Limit, Discharge or
Supplement Mode(1)
ILIM(DISCH)
A
Deglitch Time, SYS Short
Circuit during Discharge or
Supplement Mode
tDGL(SC1)
Measured from IBAT = 7A to FET off
250
2
μs
Recovery time, SYS Short
Circuit during Discharge or
Supplement Mode
tREC(SC1)
s
Battery Range for BGATE
Operation
2.5
4.5
V
(1) Continuous and periodic pulse currents from BAT to SYS are limited by Output Current specifications in Absolute Maximum Ratings
table.
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Product Folder Links: bq24260 bq24261 bq24261M bq24262
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
www.ti.com
Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BATTERY CHARGER
YFF
17
32
25
47
Measured from BAT to SYS,
VBAT = 4.2 V, Hi-Z mode
Internal battery charger
MOSFET ON-resistance
RON(BAT-SYS)
mΩ
RGE
Charge Voltage
Operating in voltage regulation, Programmable Range
TJ = 0°C to 50°C
3.5
4.44
V
RGE Package Voltage
Regulation Accuracy
–0.5%
0.5%
0.7%
0.75%
1.0%
28.1
RGE Package Voltage
Regulation Accuracy
TJ = 0°C to 85°C
TJ = 0°C to 85°C
TJ = 0°C to 125°C
TJ = 25°C
–0.7%
–0.75%
–1.0%
–29.2
YFF Package Voltage
Regulation Accuracy
VBATREG
RGE and YFF Package
Voltage Regulation Accuracy
YFF Package Voltage
Regulation Accuracy
YFF Package Voltage
Regulation Accuracy
TJ = 0°C to 85°C
TJ = 0°C to 125°C
–32.0
29.3
mV
mA
YFF Package Voltage
Regulation Accuracy
–40.2
29.3
Fast Charge Current Range
VBATSHRT ≤ VBAT < VBAT(REG)
500
–10%
–5%
1.9
3000
10%
5%
ICHARGE
500 mA ≤ ICHARGE ≤ 1A
Fast Charge Current
Accuracy
ICHARGE > 1000 mA
VBATSHRT
Battery short-circuit threshold
Hysteresis for VBATSHRT
2
2.1
V
VBATSHRT_HYS
Battery voltage falling
VBAT rising or falling
100
mV
Deglitch time for battery short
to fastcharge transition
1
ms
Battery short-circuit charge
current
IBATSHRT
VBAT < VBATSHRT
33.5
50
66.5
mA
I
TERM ≤ 50 mA
50 mA < ITERM < 200 mA
TERM ≥ 200 mA
–30%
–15%
–15%
30%
15%
10%
ITERM
Termination charge current
I
Both rising and falling, 2-mV over-drive,
tRISE, tFALL=100 ns
Deglitch time for charge
termination
tDGL(TERM)
32
ms
VRCH
Recharge threshold voltage
Deglitch time
Below VBATREG
100
120
32
150
mV
ms
tDGL(RCH)
VBAT falling below VRCH, tFALL=100 ns
Battery detection voltage
threshold
VDET(SRC1)
During current source (Turn IBATSHRT off
)
VRCH
V
(TE = 1)
VRCH
– 200mV
VDET(SRC2)
VDET(SNK)
During current source (Turn IBATSHRT on
During current sink
)
V
V
VBATSHRT
Battery detection current
before charge done (sink
current)
IDETECT
Termination enabled (TE = 1)
7
mA
Battery detection time
(sourcing current)
tDETECT(SRC)
tDETECT(SNK)
Termination enabled (TE = 1)
Termination enabled (TE = 1)
2
s
Battery detection time (sinking
current)
250
ms
8
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Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENT LIMITING
IINLIM=USB100
IINLIM=USB500
IINLIM=USB150
IINLIM=USB900
IINLIM=1.5 A
90
450
95
475
100
500
125
140
150
800
850
900
1425
1500
1575
USB charge mode, VIN = 5 V, Current
pulled from SW
IINLIM=2 A, YFF
Package
IINLIM
Input current limiting threshold
mA
1850
1850
2300
2225
2000
2000
2500
2500
2150
2200
2700
2825
IINLIM=2 A, RGE
Package
IINLIM=2.5 A, YFF
Package
IINLIM=2.5 A,
RGE Package
Input based DPM threshold
range
Charge mode, programmable via I2C
VIN_DPM
4.2
11.6
3%
V
VIN_DPM threshold Accuracy
–3%
VDRV BIAS REGULATOR
VDRV Internal bias regulator voltage VIN > 5 V
IDRV
4.3
0
4.8
5.3
10
V
DRV Output Current
DRV Dropout Voltage
mA
VDO_DRV
IIN = 1 A, VIN = 4.2 V, IDRV = 10 mA
450
mV
(VIN – VDRV
)
STATUS OUTPUT (STAT, INT)
Low-level output saturation
VOL
IO = 10 mA, sink current
V STAT = VINT = 5 V
0.4
1
V
voltage
IIH
High-level leakage current
µA
INPUT PINS (CD, PSEL)
VIL
Input low threshold
0.4
V
V
VIH
Input high threshold
1.4
3.2
RPULLDOWN
CD pulldown resistance
Deglitch for CD and PSEL
CD Only
100
100
kΩ
µs
CD or PSEL rising/falling
PROTECTION
VUVLO
IC active threshold voltage
IC active hysteresis
VIN rising
3.3
3.4
V
VUVLO_HYS
VIN falling from above VUVLO
300
mV
Battery Undervoltage Lockout
threshold
VBATUVLO
VSLP
VBAT falling, 100-mV Hysteresis
2.0 V < VBAT < VBATREG, VIN falling
2.4
40
2.6
V
Sleep-mode entry threshold,
VIN-VBAT
0
120
mV
Deglitch time, BAT above
VBATUVLO before SYS starts to
rise
tDGL(BAT)
1.2
ms
VSLP_HYS
tDGL(VSLP)
Sleep-mode exit hysteresis
VIN rising above VSLP
40
100
30
190
mV
ms
Deglitch time for supply rising
above VSLP+VSLP_HYS
Rising voltage, 2-mV over drive, tRISE=100 ns
bq24260
10.1
13.6
6.25
10.5
14
10.9
14.4
6.75
Input supply OVP threshold
voltage
VOVP
IN rising, 100-mV hysteresis
bq24261/1M
bq24262
V
6.5
Good Battery Monitor
Threshold (BQ24260/1 only)
VBATGD
VIN Rising
3.51
3.7
3.89
V
ms
V
Deglitch time, VIN OVP in
Buck Mode
tDGL(BUCK_OVP)
VBOVP
IN falling below VOVP
30
1.03 ×
VBATREG
1.05 ×
VBATREG VBATREG
1.07 ×
Battery OVP threshold voltage VBAT threshold over VOREG to turn off charger during charge
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Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
% of
VBATREG
VBOVP_HYS
VBOVP hysteresis
Lower limit for VBAT falling from above VBOVP
1
tDGL(BOVP)
ICbCLIMIT
TSHTDWN
BOVP Deglitch
Battery entering/exiting BOVP
VSYS shorted
8
4.5
150
10
ms
A
Cycle-by-cycle current limit
Thermal trip
4.1
4.9
°C
°C
°C
Thermal hysteresis
Thermal regulation threshold
Safety Timer Accuracy
TREG
Input current begins to cut off
125
–20%
20%
PWM
YFF Package: Measured from IN to SW
RGE Package: Measured from IN to SW
YFF Package: Measured from SW to PGND
RGE Package: Measured from SW to PGND
75
80
120
135
115
135
1.65
mΩ
mΩ
mΩ
mΩ
MHz
Internal top MOSFET ON-
resistance
RDSON_Q1
75
Internal bottom N-channel
MOSFET ON-resistance
RDSON_Q2
80
fOSC
Oscillator frequency
Maximum duty cycle
Minimum duty cycle
1.35
0%
1.5
95%
DMAX
DMIN
—
BATTERY-PACK NTC MONITOR (1)
VHOT
High temperature threshold
VTS falling, 2% VDRV Hysteresis
VTS falling, 2% VDRV Hysteresis
VTS rising, 2% VDRV Hysteresis
VTS rising, 2% VDRV Hysteresis
VTS rising, 4% VDRV Hysteresis
Applies to VHOT, VWARM, VCOOL and VCOLD
27.3
36.0
54.7
58.2
80
30
38.3
56.4
60
32.6 %VDRV
41.2 %VDRV
58.1 %VDRV
61.8 %VDRV
85 %VDRV
ms
VWARM
VCOOL
VCOLD
TSOFF
tDGL(TS)
Warm temperature threshold
Cool temperature threshold
Low temperature threshold
TS Disable threshold
Deglitch time on TS change
50
I2C-COMPATIBLE INTERFACE
VIH
Input low threshold level
VPULL-UP=1.8 V, SDA and SCL
VPULL-UP=1.8 V, SDA and SCL
IL=5 mA, sink current
1.3
30
V
VIL
Input low threshold level
Output low threshold level
High-Level leakage current
0.4
0.4
1
V
V
VOL
IBIAS
VPULL-UP=1.8 V, SDA and SCL
μA
s
tWATCHDOG
tI2CRESET
OTG BOOST SUPPLY
50
700
ms
Quiescent current during
boost mode (BAT pin)
IQBAT_ BOOST
3.3 V < VBAT < 4.5 V, no switching
VBAT falling
100
4.5
5.2
µA
V
Battery voltage range for
specified boost operation
3.3
Boost output voltage (to pin
VBUS)
VIN_BOOST
3.3 V < VBAT < 4.5 V over line and load
4.95
5.05
V
BOOST_ILIM = 1
BOOST_ILIM = 0
BOOST_ILIM = 1
1000
500
Maximum output current for
boost
IBO
3.3 V < VBAT < 4.5 V
mA
A
Cycle by cycle current limit for
boost (measured at low-side
FET)
4
2
IBLIMIT
3.3 V < VBAT < 4.5 V
BOOST_ILIM = 0
Overvoltage protection
threshold for boost (IN pin)
VBOOSTOVP
Signals fault and exits boost mode
5.8
6
6.2
V
Deglitch Time, VIN OVP in
Boost Mode
tDGL(BOOST_OVP)
170
µs
Upper VIN voltage threshold to
enter burst mode (stop
switching)
VBURST(ENT)
5.1
4.9
5.2
5
5.3
5.1
V
V
Lower VBUS voltage threshold
to exit burst mode (start
switching)
VBURST(EXIT)
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8.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
Oscillator frequency
Maximum duty cycle
Minimum duty cycle
TEST CONDITIONS
MIN
TYP
1.5
MAX
UNIT
fOSC
1.35
1.65
MHz
DMAX
DMIN
95%
0%
8.7 Typical Characteristics
10
8
95
90
85
6
4
2
0
-2
-4
-6
-8
-10
80
75
70
VIN=5V
TA=25ºC
TA=0ºC
VIN=7V
VIN=10V
VIN=12V
TA=85ºC
TA=60ºC
0
0.5
1
1.5
Load Current (A)
Figure 2. Efficiency vs Output Current
2
2.5
3
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
4.5
VBAT (V)
Figure 1. Charge Current vs Battery Voltage
100
0.0
90
80
70
60
50
40
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
TA=25ºC
TA=60ºC
TA=0ºC
0
0.5
1
1.5
2
2
2.5
3
3.5
4
4.5
VBAT (V)
IBAT (A)
Figure 3. Efficiency vs Battery Voltage
Figure 4. VBAT Accuracy vs IBAT – 4.2-V Setting
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Typical Characteristics (continued)
700
600
500
400
300
200
100
0
16
14
12
10
8
6
4
Input Current (μA)
2
0
-100
-2
3
5
7
9
11
13
15
0
2
4
6
8
10
Input Voltage - V
Figure 5. Input IQ - No Battery, No System
12
14
16
Input Voltage (V)
Figure 6. Input IQ With Hi-Z Enabled
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SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
9 Detailed Description
9.1 Overview
The bq24260/1/1M/2 is a highly integrated single-cell Li-Ion battery charger and system power-path management
device targeted for space-limited, portable applications with high capacity batteries. The single-cell charger has a
single input that supports operation from either a USB port or wall adapter supply for a versatile solution.
The power-path management feature allows the bq24260/1/1M/2 to power the system from a high efficiency DC-
DC converter while simultaneously and independently charging the battery. The charger monitors the battery
current at all times and reduces the charge current when the system load requires current above the input
current limit or the adapter cannot support the required load, causing the adapter voltage to fall (VIN_DPM). This
allows for proper charge termination and timer operation. The system voltage is regulated to the battery voltage
but will not drop below 3.5 V (VMINSYS). This minimum system voltage support enables the system to run with a
defective or absent battery pack and enables instant system turnon even with a totally discharged battery or no
battery. The power-path management architecture also permits the battery to supplement the system current
requirements when the adapter cannot deliver the peak system currents. The power-path feature coupled with
VIN-DPM, enables the use of many adapters with no hardware change. The charge parameters are
programmable using the I2C interface. To support USB OTG applications, the bq24260/1/1M/2 is configurable to
boost the battery voltage to 5 V at the input. In this mode, the bq24260/1/1M/2 supplies up to 1 A and operates
with battery voltages down to 3.3 V.
The battery is charged using a standard Li-Ion charge profile with three phases: precharge, constant current, and
constant voltage. In all charge phases, an internal control loop monitors the IC junction temperature and reduces
the input current to prevent the junction temperature from rising above 125°C. Additionally, a voltage-based,
JEITA-compatible battery pack thermistor monitoring input (TS) is included that monitors battery temperature and
automatically changes charge parameters to prevent the battery from charging outside of its safe temperature
range.
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9.2 Functional Block Diagram
PMID
ꢀ.8V
Reference
DRV
IN
ICbCLimit
BOOT
IINLIM
Q1
DC-DC CONVERTER PWM LOGIC,
COMPENSATION AND BATTERY
FET CONTROL
VINDPM
VSYS(REG)
IBAT(REG)
VBAT(REG)
SW
DIE Temp
Regulation
Qꢁ
PGND
VSUPPLY
References
SYS
OVP
Comparator
Termination
Reference
VIN
+
Q3
VINOVP
+
IBAT
Termination
Comparator
Sleep
Comparator
BAT
VIN
+
Recharge Comparator
+
VBAT+VSLP
Start Recharge
Cycle
VBATREG 0.1ꢁV
VBAT
Hi-Impedance Mode
BGATE
VSYSREG Comparator
Hi-Z
Mode
+
VSYS
Enable Linear
Charge
CD
VMINSYS
+
Enable HiZ in
DEFAULT mode
SDA
SCL
VBATGD
IꢁC
Interface
VBATSC Comparator
+
Enable
IBATSHRT
VBAT
VBATSHRT
Supplement COMPARATOR
+
VSYS
VBSUP
VBAT
bqꢁꢀꢁ60
D+
VDRV
VBOVP Comparator
USB
Adapter
Detection
Circuitry
+
VBAT
1.5A /
USB100
VBATOVP
D-
+
DISABLE
bqꢁꢀꢁ61/ꢁ
PSEL
TS COLD
+
+
1C/
0.5C
TS COOL
VBATREG
0.1ꢀV
STAT
INT
TS WARM
TS HOT
+
DISABLE
TS
CHARGE
CONTROLLER
w/ Timers
Figure 7. Block Diagram in Charging Mode
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SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
Functional Block Diagram (continued)
PMID
4.8-V
DRV
Reference
IN
BOOT
V
Amp
BOOST
+
Q1
V
IN_BOOST
DC-DC
CONVERTER
PWM LOGIC
AND
Low Side Current
Limit Comparator
+
+
SW
V
V
BURST_ENT
Burst Mode Enter
Comparator
I
COMPENSATION
BLIMITI
V
DRV
+
Q2
BURST_EXT
Burst Mode Exit
Comparator
PGND
Boost Short Circuit
Comparator
+
V
BOOSTSHRT
+
V
BOOSTOVP
V
BOOST
OVP Comparator
SYS
Battery SC Comparator
V
BIAS
V
Q3
+
BAT
Battery Short
Circuit
I
LIM(DISCH)
BAT
CD
Hi-Z
Mode
SDA
SCL
2
I C
interface
BGATE
Digital Control
STAT
INT
TS
Figure 8. Block Diagram in Boost Mode
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9.3 Feature Description
The bq24260/1/1M/2 is a highly integrated single-cell Li-Ion battery charger and system power path management
device that supports operation from either a USB port or wall adapter supply. The power path feature allows the
bq24260/1/1M/2 to power the system from a high efficiency DC-DC converter while simultaneously and
independently charging the battery. The power path also permits the battery to supplement the system current
requirements when the adapter cannot. Many features are programmable using the I2C interface. To support
USB OTG applications, the bq24260/1/1M/2 is configurable to boost the battery voltage to 5 V and supply up to 1
A at the input. The battery is charged with three phases: precharge, constant current and constant voltage.
Thermal regulation prevents the die temperature from exceeding 125°C. Additionally, a JEITA compatible battery
pack thermistor monitoring input (TS) is included to prevent the battery from charging outside of its safe
temperature range.
Device Functional Modes explains these features in detail.
9.4 Device Functional Modes
9.4.1 High Impedance Mode
High Impedance mode (Hi-Z mode) is the low quiescent current state for the bq24260/1/1M/2. During Hi-Z mode,
the buck converter is off, and the battery FET and BGATE are on. SYS is powered by BAT. The bq24260/1/1M/2
is in Hi-Z mode when VIN < VUVLO, the HZ_MODE bit in the I2C is '1' or the CD terminal is driven high. Hi-Z mode
resets the safety timer.
The bq24260/1/1M/2 contains a CD input that is used to disable the IC and place the bq24260/1/1M/2 into high-
impedance mode. Drive CD low to enable the bq24260/1/1M/2 and enter normal operation. Drive CD high to
disable charge and place the bq24260/1/1M/2 into high-impedance mode. CD is internally pulled down to PGND
with a 100-kΩ resistor. When exiting Hi-Z mode, charging resumes in approximately 110 ms.
9.4.2 Battery Only Connected
When the battery is connected with no input source, the battery FET is turned on. After the battery rises above
VBATUVLO and the deglitch time, tDGL(BAT), the SYS output starts to rise. In this mode, the current is not regulated;
however, there is a short-circuit current limit. If the short-circuit limit (ILIM(DISCHG)) is reached for the deglitch time
(tDGL(SC)), the battery FET is turned off for the recovery time (tREC(SC)). After the recovery time, the battery FET is
turned on to test and see if the short has been removed. If it has not, the FET turns off and the process repeats
until the short is removed. This process protects the internal FET from overcurrent. If an external FET is used
for discharge, the body diode prevents the load on SYS from being disconnected from the battery and tDGL(BAT) is
not applicable.
9.4.3 Input Connected
9.4.3.1 Input Voltage Protection in Charge Mode
9.4.3.1.1 Sleep Mode
The bq24260/1/1M/2 enters the low-power sleep mode if the voltage on VIN falls below sleep-mode entry
threshold, VBAT+VSLP, and VIN is higher than the undervoltage lockout threshold, VUVLO. In sleep mode, the input
is isolated from the battery. This feature prevents draining the battery during the absence of VIN. When VIN
<
VBAT+ VSLP, the bq24260/1/1M/2 turns off the PWM converter, turns the battery FET and BGATE on, sends a
single 128-μs pulse on the STAT and INT outputs and the STATx and FAULT_x bits of the status registers are
updated in the I2C. Once VIN > VBAT+ VSLP, the STATx bits are cleared and the device initiates a new charge
cycle. The FAULT_x bits are not cleared until they are read in the I2C and the sleep condition no longer exists.
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Device Functional Modes (continued)
9.4.3.1.2 Input Voltage Based Dynamic Power Management (VIN-DPM)
During normal charging process, if the input power source is not able to support the programmed or default
charging current, the supply voltage deceases. Once the supply drops to VIN_DPM (default 4.2 V), the charge
current limit is reduced to prevent the further drop of the supply. When the IC enters this mode, the charge
current is lower than the set value and the DPM_STATUS bit is set. This feature ensures IC compatibility with
adapters with different current capabilities without a hardware change. Figure 9 shows the VIN-DPM behavior to a
current limited source. In this figure the input source has a 2-A current limit and the device is charging at 1 A. A
2.5-A load transient then occurs on VSYS causing the adapter to hit its current limit and collapse, while VSYS goes
from VSYSREG(LO) to VMINSYS. If the 2X timer is set, the safety timer is extended while VIN-DPM is active.
Additionally, termination is disabled.
Input voltage regulated to VIN_DPM
VIN
1V/div
2A/div
(5V Offset)
Input current limit reduced to avoid crashing adapter
IIN
500mV/div
2A/div
VSYS
(3.6V Offset)
SYS enters supplement mode to ensure SYS load is supported
Normal Charging (1A)
SYS load removed,
normal charging
resumes
IBAT
2A/div
ISYS
800us/div
Figure 9. bq24260/1/1M/2 VIN-DPM
9.4.3.1.3 Input Overvoltage Protection
The built-in input overvoltage protection protects the bq24260/1/1M/2 and downstream components connected to
SYS and/or BAT against damage from overvoltage on the input supply (Voltage from VIN to PGND). When VIN
>
VOVP, the bq24260/1/1M/2 turns off the PWM converter immediately. After the deglitch time tDGL(BUCK_OVP), an
OVP fault is determined to exist. During the OVP fault, the bq24260/1/1M/2 turns the battery FET and BGATE
on, sends a single 128-μs pulse on the STAT and INT outputs, and the STATx and FAULT_x bits are updated in
the I2C. Once the OVP fault is removed, the STATx bits are cleared and the device returns to normal operation.
The FAULT_x bits are not cleared until they are read in the I2C after the OVP condition no longer exists.
The OVP threshold for the bq24260 is 10.5 V for operation from standard adapters while the bq24261/1M is set
to 14 V to enable operation from 12-V sources. The bq24262 OVP is set to 6.5 V to operate from standard USB
sources.
9.4.3.2 Charge Profile
When a valid input source is connected (VIN > VUVLO and VBAT + VSLP < VIN < VOVP), the CE bit in the control
register determines whether a charge cycle is initiated. By default, the bq24260 and bq24262 enable the charge
cycle when a valid input source is connected while the bq24261/1M do not (CE = 1 by default). When the CE bit
is 1 and a valid input source is connected, the battery FET is turned off and the SYS output is regulated to
VSYSREG(HI). A charge cycle is initiated when the CE bit is written to a 0.
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Device Functional Modes (continued)
The bq24260/1/1M/2 supports a precision Li-Ion or Li-Polymer charging system for single-cell applications.
Charging is done through the internal battery MOSFET. There are 6 loops that influence the charge current;
constant current loop (CC), constant voltage loop (CV), thermal regulation loop, minimum system voltage loop
(MINSYS), input current limit and VIN-DPM. During the charging process, all six loops are enabled and the one
that is dominant takes control. The minimum system output feature regulates the system voltage to VSYSREG(LO)
,
so that startup is enabled even for a missing or deeply discharged battery. Figure 10 shows a typical charge
profile including the minimum system output voltage feature.
Voltage Regulation
Phase
Precharge
Phase
Current Regulation
Phase
Regulation
Voltage
Regulation
Current
System Voltage
VSYS
(3.6V)
VBATSHORT
(2.0V)
Battery
Voltage
Charge Current
Termination
IBATSHORT
Linear Charge
50mA Linear Charge
to Close Pack
Protector
to Maintain
Minimum
System
Battery
FET
is OFF
Battery FET (Q3) is
ON
Voltage
Figure 10. Typical Charging Profile of bq24260/1/1M/2 With Termination Enabled
9.4.4 Battery Charging Process
When the battery is deeply discharged or shorted, the bq24260/1/1M/2 applies a IBATSHRT current to close the
battery protector switch and bring the battery voltage up to acceptable charging levels. During this time, the
battery FET is off and the system output is regulated to VSYSREG(LO). Once the battery rises above VBATSHRT, the
charge current is regulated to the value set in the I2C register. The battery FET is linearly regulated to maintain
the system voltage at VSYSREG(LO). Under normal conditions, the time spent in this region is a very short
percentage of the total charging time, so the linear regulation of the charge current does not affect the overall
charging efficiency for very long. If the die temperature does heat up, the thermal regulation loop reduces the
input current to maintain a die temperature at 125°C. If the current limit for the SYS output is reached (limited by
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Device Functional Modes (continued)
the input current limit, VIN-DPM, or 100% duty cycle), the SYS output drops to the VMINSYS output voltage. When
this happens, the charge current is reduced to ensure the system is supplied with all the current that is needed
while maintaining the minimum system voltage. If the charge current is reduced to 0 mA, pulling further current
from SYS causes the output to fall to the battery voltage and enter supplement mode (see Dynamic Power-Path
Management for more details).
Once the battery is charged enough that the system voltage rises above VSYSREG(LO) (approximately 3.5 V), the
battery FET is turned on fully and the battery is charged with the full programmed charge current set by the I2C
interface, ICHARGE. The charge current is regulated to ICHARGE until the voltage between BAT and PGND reaches
the regulation voltage. The voltage between BAT and PGND is regulated to VBATREG (CV mode) while the charge
current naturally tapers down as shown in Figure 10. During CV mode, the SYS output remains connected to the
battery. The impedance of the battery FET is increased to 4x of the fully on value when IBAT falls below
approximately 350 mA to provide increased accuracy during termination. This will show a small rise in the SYS
voltage when the RDSON increases below approximately 350 mA.
When termination is enabled (TE bit is '1'), the bq24260/1/1M/2 monitors the charging current during the CV
mode. Once the charge current tapers down to the termination threshold, ITERM, and the battery voltage is above
the recharge threshold, the bq24260/1/1M/2 terminates charge, turns off the battery charging FET and enters
battery detection (see Battery Detection section for more details). The system output is regulated to the
VSYSREG(HI) and supports the full current available from the input. The battery supplement mode is available to
supply any SYS load that cannot be supported by the input source (see Dynamic Power-Path Management for
more details). The termination current level is programmable. To disable the charge current termination, the host
sets the charge termination bit (TE) of charge control register to 0. Refer to I2C section for details. When
termination is disabled, VBAT is continuously regulated to VBATREG. Termination is also disabled when any loop is
active other than CC or CV. This includes VINDPM, input current limit, or thermal regulation. Termination is also
disabled during TS warm/cool conditions and when the LOW_CHG bit is set to '1'.
A charge cycle is initiated when one of the following conditions is detected:
1. The battery voltage falls below the VBATREG-VRCH threshold.
2. IN Power-on reset (POR)
3. CE bit toggle or RESET bit is set (Host controlled)
4. CD terminal is toggled
9.4.5 Charge Time Optimizer
The CC to CV transition is enhanced in the bq24260/1/1M/2 architecture. The "knee" between CC and CV is
sharp. This enables the charger to remain in CC mode as long as possible before beginning to taper the charge
current (CV mode). This provides a decrease in charge time as compared to older topologies.
9.4.6 Battery Detection
When termination conditions are met, a battery detection cycle is started. During battery detection, IDETECT is
pulled from VBAT for tDETECT(SNK) to verify there is a battery. If the battery voltage remains above VDET(SINK) for the
full duration of tDETECT(SNK), a battery is determined to present and the IC enters “Charge Done”. If VBAT falls
below VDET(SINK), a “Battery Not Present” fault is signaled, the charge parameters are reset (VBATREG, ICHARGE and
ITERM) and battery detection continues. The next cycle of battery detection, the bq24260/1/1M/2 turns on IBATSHRT
for tDETECT(SRC). If VBAT rises to VDET(SRC1), the current source is turned off and a “No Battery” condition is
registered. In order to keep VBAT high enough to close the battery protector, the current source turns on if VBAT
falls to VDET(SRC2). The source cycle continues for tDETECT(SRC). After tDETECT(SRC), the battery detection continues
through another current sink cycle. Battery detection continues until charge is disabled, the
bq24260/1/1M/2enters hi-z mode or a battery is detected. Once a battery is detected, the fault status clears and
a new charge cycle begins. With no battery connected, the BAT output will transition from VRCH to PGND with a
high period of tDETECT(SRC) and a low period of tDETECT(SNK). See Figure 30 in Application Curves. Battery detection
is not performed when termination is disabled.
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Device Functional Modes (continued)
9.4.7 Battery Overvoltage Protection (BOVP)
If the battery is ever above the battery OVP threshold (VBOVP), the battery OVP circuit shuts the PWM converter
off and the battery FET is turned on to discharge the battery to safe operating levels. A battery OVP most
commonly occurs when the bq24260/1/1M/2 returns to DEFAULT mode after a watchdog timer expiration or
RESET bit written to '1'. In this condition, the VBATREG is reset and may be below the battery voltage. Other
conditions may be when the input is initially plugged in before I2C communication is established or TS WARM
conditions or when writing the VBATREG to less than the battery voltage. The battery OVP condition is cleared
when the battery voltage falls below the hysteresis of VBOVP either by the battery discharging or writing the
VBATREG to a higher value. When a battery OVP event exists for tDGL(BOVP), the bq24260/1/1M/2 turns the battery
FET and BGATE on, sends a single 128μs pulse on the STAT / INT outputs and the STATx and FAULT_x bits
are updated in the I2C. Once the BOVP fault is removed, the STATx bits are cleared and the device returns to
normal operation. The FAULT_x bits are not cleared until they are read in the I2C after the BOVP condition no
longer exists.
9.4.8 Dynamic Power-Path Management
The bq24260/1/1M/2 features a SYS output that powers the external system load connected to the battery. This
output is active whenever a valid source is connected to IN or BAT. When VSYS > VSYSREG(LO), the SYS output is
connected to VBAT. If the battery voltage falls to VMINSYS, VSYS is regulated to the VSYSREG(LO) threshold to
maintain the system output even with a deeply discharged or absent battery. In this mode, the SYS output
voltage is regulated by the buck converter and the battery FET is linearly regulated to regulate the charge current
into the battery. The current from the supply is shared between charging the battery and powering the system
load at SYS. The dynamic power-path management (DPPM) circuitry of the bq24260/1/1M/2 monitors the current
limits continuously and if the SYS voltage falls to the VMINSYS threshold, it adjusts charge current to maintain the
minimum system voltage and supply the load on SYS. If the charge current is reduced to zero and the load
increases further, the bq24260/1/1M/2 enters battery supplement mode. During supplement mode, the battery
FET is turned on and VBAT = VSYS while the battery supplements the system load.
2000mA
1800mA
ISYS
800mA
0mA
1500mA
IIN
~850mA
0mA
1A
0mA
IBAT
–200mA
3.6V
3.5V
DPPM loop active
VSYS
~3.1V
Supplement
Mode
Figure 11. Example DPPM Response (VSupply=5V, VBAT = 3.1V, 1.5A Input Current Limit)
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Device Functional Modes (continued)
9.4.9 Battery Discharge FET (BGATE)
The bq24260/1/1M/2 contains a MOSFET driver to drive an external discharge FET between the battery and the
system output. This external FET provides a low impedance path for supplying the system from the battery.
Connect BGATE to the gate of the external discharge P-channel MOSFET. BGATE is on (low) under the
following conditions:
1. No input supply connected.
2. HZ_MODE = 1
3. CD terminal = 1
9.4.10 DEFAULT Mode
DEFAULT mode is used when I2C communication is not available. DEFAULT mode is entered in the following
situations:
1. When the charger is enabled and VBAT<VBATGD before I2C communication is established
2. When the watchdog timer expires without a reset from the I2C interface
3. The RESET bit is written in the I2C register
In DEFAULT mode, the I2C registers are reset to the default values. The 2-minute safety timer is reset and starts
when DEFAULT mode is entered if a charge cycle is underway. The default value for VBATREG is 3.6 V for the
bq24260/1/1M and 4.2 V for the bq24262. The default value for ICHARGE is 1 A. For the bq24260, the input current
limit is determined by the D+/D– detection (See D+/D– Based Adapter Detection section). For the bq24261,
bq24261M and bq24262, the input current limit in DEFAULT mode is set by PSEL. (See Power Source Selector
Input section) DEFAULT mode is exited by writing to the I2C interface. Note that if termination is enabled and
charging has terminated, a new charge cycle is NOT initiated when entering DEFAULT mode.
9.4.11 Good Battery Monitor
The bq2426x contains a good battery monitor circuit that places the bq2426x into hi-z mode if the battery voltage
is above the VBATGD threshold while in DEFAULT mode. This function is used to enable compliance to the
battery charging standard that prevents charging from an un-enumerated USB host while the battery is above the
good battery threshold. If the bq24260/1/1M/2 is in HOST mode, it is assumed that USB host has been
enumerated and the good battery circuit has no effect on charging. Any write to the I2C places the
bq24260/1/1M/2 in HOST mode and clears the high-impedance mode condition. The HZ_MODE bit is not
updated during this condition.
9.4.12 D+/D– Based Adapter Detection (D+/D–, bq24260 only)
The bq24260 contains a D+/D- based adapter detection circuit that is used to program the input current limit for
the input during DEFAULT mode. D+/D- is only performed in DEFAULT mode unless forced by the D+/D-_EN
bit in host mode.
By default the input current limit is set to 100 mA. During DEFAULT mode, when the input source is connected,
the bq24260 performs an adapter detection to determine if it is connected to a USB port or dedicated charger.
The adapter detection starts with a connection detection as described in the USB Battery Charging Specification
ver 1.2 (BC1.2). Once a connection is detected, the adapter detection is performed. If a connection is not
detected within 500ms, the adapter detection begins. The adapter detection runs as described in BC1.2. If a
CDP/DCP is detected, the input current limit is increased to 1.5 A. If an SDP is detected, the current limit
remains at 100 mA, until changed in the I2C.
D+/D- is initiated at any time by the host by setting the D+/D- EN bit in the I2C to 1. After detection is complete
the D+/D- EN bit is automatically reset to 0 and the detection circuitry is disconnected from the D+ D- terminals
to avoid interference with USB data transfer. When a command is written to change the input current limit in the
I2C, this overrides the current limit selected by D+/D- detection.
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Device Functional Modes (continued)
9.4.13 Power Source Selector Input (PSEL, bq24261/2 only)
The bq24261/2 contains a PSEL input that is used to program the input current limit during DEFAULT mode.
Drive PSEL high to indicate a USB source is connected to the input and program the 100 mA (bq24261/1M) or
500mA (bq24262) current limit for IN. Drive PSEL low to indicate that an AC Adapter is connected to the input.
When PSEL is low, the IC starts up with a 1.5-A input current limit. Once an I2C write is done and the device is in
HOST mode, the PSEL has no effect on the input current limit until the watchdog timer expires and returns
thebq24260/1/1M/2 to DEFAULT mode.
9.4.14 Safety Timer and Watchdog Timer in Charge Mode (bq24260/1/1M only)
At the beginning of charging process, the bq24260/1/1M starts the safety timer. This timer is active during the
entire charging process. If charging has not terminated before the safety timer expires, the IC enters suspend
mode where charging is disabled. When a safety timer fault occurs, a single 128μs pulse is sent on the STAT
and INT outputs and the STATx and FAULT_x bits of the status registers are updated in the I2C. The CE bit, Hi-Z
mode, or power must be toggled in order to clear the safety timer fault. The safety timer duration is selectable
using the TMR_X bits in the Safety Timer Register/ NTC Monitor register. When the safety timer is active,
changing the safety timer duration resets the safety timer. The bq24260/1/1M also contains a 2X_TIMER bit that
enables the 2x timer function to prevent premature safety timer expiration when the charge current is reduced by
a load on SYS or a NTC condition. When 2X_TIMER is enabled, the timer runs at half speed when any loop is
active other than CC or CV. This includes VINDPM, input current limit, or thermal regulation. The timer also runs at
half speed during TS warm/cool conditions and when the LOW_CHG bit is set to 1.
In addition to the safety timer, the bq24260/1/1M contains a 30-second (tWATCHDOG) watchdog timer that monitors
the host through the I2C interface. Once a write is performed on the I2C interface, a watchdog timer is started.
The watchdog timer is reset by the host using the I2C interface. This is done by writing a 1 to the reset bit
(TMR_RST) in the control register. The TMR_RST bit is automatically set to 0 when the watchdog timer is reset.
This process must continue as long as the input is connected in order to maintain the register contents. If the
watchdog timer expires, the IC enters DEFAULT mode where the default register values are loaded, the safety
timer restarts at 2 minutes once charging continues. The I2C may be accessed again to reinitialize the desired
values and restart the watchdog timer. The watchdog timer flow chart is shown in Figure 12.
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Device Functional Modes (continued)
Start Safety Timer
Yes
Safety timer
fault
Safety timer expired?
No
Charging suspended
Enter suspended
mode
Fault indicated in
STAT registers
STAT = Hi
Update STAT
bits
Yes
Charge Done?
< I
TERM
I
CHG
No
I2C Write
performed?
No
Yes
Start watchdog timer
Reset watchdog timer
STAT = Hi
Update STAT
bits
Yes
Charge Done?
< I
I
CHG
TERM
No
Yes
Safety timer expired?
No
Safety timer
fault
Charging suspended
Enter suspended
mode
Fault indicated in
STAT registers
No
Yes
Received
software watchdog
RESET?
No
WD timer expired?
Yes
Reset to default
values in I2C
register
Restart 2 min
safety timer
Figure 12. Watchdog Timer Flow Chart for bq24260/1/1M
9.4.15 LDO Output (DRV)
The bq24260/1/1M/2 contains a linear regulator (DRV) that is used to supply the internal MOSFET drivers and
other circuitry. Additionally, DRV supplies up to 10mA external loads to power the STAT LED or the USB
transceiver circuitry. The maximum value of the DRV output is 5.3 V so it ideal to protect voltage sensitive USB
circuits. The LDO is on whenever a supply is connected to the input of the bq24260/1/1M/2. The DRV is disabled
under the following conditions:
•
•
•
VSUPPLY < UVLO
VSUPPLY < VBAT + VSLP
Thermal Shutdown
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Device Functional Modes (continued)
9.4.16 External NTC Monitoring (TS)
The I2C interface allows the user to easily implement the JEITA standard for systems where the battery pack
thermistor is monitored by the host. Additionally, the bq24260/1/1M/2 provides a flexible, voltage based TS input
for monitoring the battery pack NTC thermistor. The voltage at TS is monitored to determine that the battery is at
a safe temperature during charging. The JEITA specification is shown in Figure 13.
1.0 C
Charging Current
0.5 C
Portion of spec not covered by TS
Implementation on bq2426x
4.25 V
4.15 V
VBAT
4.1 V
T1
(0°C)
T2
(10°C)
T3 T4
(45°C) (50°C)
T5
(60°C)
Cold
Cool
Warm
Hot
Figure 13. Charge Current During TS Conditions
To satisfy the JEITA requirements, four temperature thresholds are monitored; the cold battery threshold (TNTC
<
0°C), the cool battery threshold (0°C < TNTC < 10°C), the warm battery threshold (45°C < TNTC < 60°C) and the
hot battery threshold (TNTC > 60°C). These temperatures correspond to the VCOLD, VCOOL, VWARM, and VHOT
thresholds in the EC table. Charging is suspended and timers are suspended when VTS < VHOT or VTS > VCOLD
.
When VCOOL < VTS < VCOLD, the charging current is reduced to half of the programmed charge current. When
VHOT < VTS < VWARM, the battery regulation voltage is reduced by 140mV from the programmed regulation
threshold. The TS function is disabled by connecting TS directly to DRV (VTS > VTSOFF).
The TS function is voltage based for maximum flexibility. Connect a resistor divider from DRV to GND with TS
connected to the center tap to set the threshold. The connections are shown in Figure 14. The resistor values are
calculated using the following equations:
é
ê
ë
ù
ú
û
1
1
VDRV ´RCOLD´RHOT ´
-
VCOLD VHOT
RLO =
é
ê
ë
ù
é
ê
ù
V
VDRV
VHOT
DRV
RHOT ´
-1 - RCOLD´
-1
ú
ú
VCOLD
û
ë
û
(1)
VDRV
-1
VCOLD
RHI =
1
1
+
RLO RCOLD
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Device Functional Modes (continued)
where
•
•
VCOLD = 0.60 × VDRV
VHOT = 0.30 × VDRV
(2)
(3)
RLO´RHI´ 0.564
RLO - RLO´0.564 -RHI´0.564
RLO´RHI´ 0.383
RCOOL =
RWARM =
RLO - RLO´ 0.383 -RHI´0.383
where
•
•
RHOT is the NTC resistance at the hot temperature
RCOLD is the NTC resistance at cold temperature
(4)
The WARM and COOL thresholds are not independently programmable. The COOL and WARM NTC
resistances for a selected resistor divider are calculated using Equation 3 and Equation 4.
VBATREG
1 x Charge/
0.5 x Charge
VDRV
– 140 mV
DISABLE
TS COLD
+
TS COOL
TS WARM
+
+
VDRV
TS HOT
RHI
+
TS
PACK+
TEMP
bq2426x
RLO
PACK–
Figure 14. TS Circuit
9.4.17 Thermal Regulation and Protection
During the charging process, to prevent overheating in the chip, bq24260/1/1M/2 monitors the junction
temperature, TJ, of the die and reduces the input current once TJ reaches the thermal regulation threshold, TREG
.
The input current is reduced to zero when the junction temperature increases about 10°C above TREG. Once the
input current is reduced to 0, the system current is reduced while the battery supplements the load to supply the
system. When the input current is completely reduced to 0 and TJ > 125°C, this is may cause a thermal
shutdown of the bq24260/1/1M/2 if the die temperature rises too high. At any state, if TJ exceeds TSHTDWN
,
bq24260/1/1M/2 stops charging and disables the buck converter. During thermal shutdown mode, PWM is turned
off, all timers are suspended, a single 128-μs pulse is sent on the STAT and INT outputs, and the STATx and
FAULT_x bits of the status registers are updated in the I2C. The charge cycle resumes when TJ falls below
TSHTDWN by approximately 10°C.
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Device Functional Modes (continued)
9.4.18 Charge Status Outputs (STAT, INT)
The STAT/INT output is used to indicate operation conditions for bq24260/1/1M/2. STAT/INT is pulled low during
charging when EN_STAT bit in the control register is set to 1. When charge is complete or disabled, STAT/INT is
high impedance. When a fault occurs, a 128-µs pulse (interrupt) is sent out to notify the host. The status of
STAT/INT during different operation conditions is summarized in Table 1. STAT/INT drives an LED for visual
indication or can be connected to the logic rail for host communication. The EN_STAT bit in the control register is
used to enable/disable the charge status for STAT/INT. The interrupt pulses are unaffected by EN_STAT and will
always be shown.
Table 1. STAT Terminal Summary
CHARGE STATE
Charge in progress and EN_STAT=1
STAT and INT BEHAVIOR
Low
Other normal conditions
High-Impedance
Charge mode faults: Timer faults, sleep mode, VIN overvoltage, VIN < UVLO or Sleep
mode, BOVP, thermal shutdown, No Battery and Battery Temperature faults
128-µs pulse, then High Impedance
9.4.19 Boost Mode Operation
In HOST mode, when the operation mode bit (BOOST_EN) in the control register is set to 1, bq24260/1/1M/2
operates in boost mode and delivers 5 V to IN to supply USB OTG devices connected to the USB connector.
Boost operation can start with VBAT between 3.45 V to 4.5 V, and will maintain boost output until VBAT falls to
3.3 V. IN supplies up to 1 A to power these devices. It is not recommended to operate boost mode when the
battery voltage is less than 3.3 V. Proper operation is not ensured.
9.4.19.1 Chip Disable Input During Boost Mode (CD)
The bq24260/1/1M/2 contains a CD input that is used to disable the IC and place the bq24260/1/1M/2 into high-
impedance mode. CD must be low to enter boost mode. Driving CD high during boost mode places the
bq24260/1/1M/2 into hi-z mode and resets the BOOST_EN bit in the I2C. When CD is high, the buck converter is
off, and the battery FET and BGATE are turned on. CD is internally pulled down to GND with a 100-kΩ resistor.
9.4.19.2 PWM Controller in Boost Mode
Similar to charge mode operation, in boost mode the IC switches at 1.5MHz to regulate the voltage at IN to 5 V.
The voltage control loop is internally compensated to provide enough phase margin for stable operation with the
full battery voltage range and up to 1 A.
In boost mode, the cycle-by-cycle current limit is set to 4 A or 2 A (depending on the I2C setting) to provide
protection against short-circuit conditions. If the cycle-by-cycle current limit is active for 8 ms, an overload
condition is detected and the device exits boost mode, and signals an overcurrent fault. Additionally, discharge
current limit (ILIM(DISCHG)) is active to protect the battery from overload. Synchronous operation and burst mode
are used to maximize efficiency over the full load range.
The bq24260/1/1M/2 will not enter boost mode unless the IN voltage is less than the UVLO. When the boost
function is enabled, the bq24260/1/1M/2 enters a linear mode to bring IN up to the battery voltage. Once VIN
>
(VBAT – 1 V), the bq24260/1/1M/2 begins switching and regulates IN up to 5 V. If VIN does not rise to within 1 V of
VBAT within 8 ms, an overcurrent event is detected and boost mode is exited and a boost mode overcurrent event
is announced, the BOOST_EN bit is reset to 0 and the STAT_x and FAULT_x bits in the Status/ Control register
are updated.
9.4.19.3 Burst Mode During Light Load
In boost mode, the IC operates using burst mode to improve light load efficiency and reduce power loss. During
boost mode, the PWM converter is turned off when the device reaches minimum duty cycle and the output
voltage rises to VBURST(ENT) threshold. This corresponds to approximately a 75-mA inductor current. The
converter then restarts when VIN falls to VBURST(EXT). See Figure 38 in the Application Curves for an example
waveform.
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9.4.19.4 Watchdog Timer in Boost Mode
During boost mode, the watchdog timer is active. The watchdog timer works the same as in charge mode. Write
a 1 to the TMR_RST reset bit in the control register. If the watchdog timer expires, the IC resets the EN_BOOST
bit to 0, signals the fault pulse on the STAT and INT terminals. The FAULT_x bits read "Low Supply Fault" as
this is a higher priority fault than the WD timer.
9.4.19.5 STAT/ INT During Boost Mode
During boost mode, the STAT and INT outputs are high impedance. Under fault conditions, a 128-µs pulse is
sent out to notify the host of the error condition.
9.4.19.6 Protection in Boost Mode
9.4.19.6.1 Output Overvoltage Protection
The bq24260/1/1M/2 contains integrated overvoltage protection on the IN terminal. During boost mode, if an
overvoltage condition is detected (VIN > VBOOSTOVP), after deglitch tDGL(BOOST_OVP), the IC turns off the PWM
converter, resets EN_BOOST bit to 0, sets fault status bits and sends out a fault pulse on STAT and INT. The
converter does not restart when VIN drops to the normal level until the EN_BOOST bit is reset to 1.
9.4.19.6.2 Output Overcurrent Protection
The bq24260/1/1M/2 contains overcurrent protection to prevent the device and battery damage when IN is
overloaded. When an overcurrent condition occurs, the cycle-by-cycle current limit limits the current from the
battery to the load. If the overload condition lasts for 8 ms, the overload fault is detected. When an overload
condition is detected, the bq24260/1/1M/2 turns off the PWM converter, resets EN_BOOST bit to 0, sets the fault
status bits and sends out the fault pulse on STAT and INT. The boost operation starts only after the fault is
cleared and the EN_BOOST bit is reset to 1 using the I2C.
9.4.19.6.3 Battery Voltage Protection
During boost mode, when the battery voltage is below the minimum battery voltage threshold, VBATUVLO, the IC
turns off the PWM converter, resets EN_BOOST bit to 0, sets fault status bits and sends out a fault pulse on
STAT and INT. Once the battery voltage returns to the acceptable level, the boost starts only after the
EN_BOOST bit is set to 1. Proper operation below 3.3 V down to the VBATUVLOis not specified.
9.5 Programming
9.5.1 Serial Interface Description
The bq24260 uses an I2C compatible interface to program charge parameters. I2C is a 2-wire serial interface
developed by NXP (formerly Philips Semiconductor, see I2C-Bus Specification, Version 5, October 2012). The
bus consists of a data line (SDA) and a clock line (SCL) with pullup structures. When the bus is idle, both SDA
and SCL lines are pulled high. All the I2C compatible devices connect to the I2C bus through open-drain I/O
terminals, SDA and SCL. A master device, usually a microcontroller or a digital signal processor, controls the
bus. The master is responsible for generating the SCL signal and device addresses. The master also generates
specific conditions that indicate the START and STOP of data transfer. A slave device receives and/or transmits
data on the bus under control of the master device.
The bq24260/1/1M/2 device works as a slave and supports the following data transfer modes, as defined in the
I2C Bus™ Specification: standard mode (100 kbps) and fast mode (400 kbps). The interface adds flexibility to
the battery charge solution, enabling most functions to be programmed to new values depending on the
instantaneous application requirements. The I2C circuitry is powered from IN when a supply is connected. If the
IN supply is not connected, the I2C circuitry is powered from the battery through BAT. The battery voltage must
stay above VBATUVLO with no input connected in order to maintain proper operation.
The data transfer protocol for standard and fast modes is exactly the same; therefore, they are referred to as the
F/S-mode in this document. The bq24260/1/1M/2 device only supports 7-bit addressing. The device 7-bit address
is defined as ‘1101011’ (0x6Bh).
To avoid I2C hang-ups, a timer (tI2CRESET) runs during I2C transactions. If the transaction takes longer than
tI2CRESET, any additional commands are ignored and the I2C engine is reset. The timeout is reset with START and
repeated START conditions and stops when a valid STOP condition is sent.
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Programming (continued)
9.5.2 F/S Mode Protocol
The master initiates data transfer by generating a start condition. The start condition is when a high-to-low
transition occurs on the SDA line while SCL is high, as shown in Figure 15. All I2C -compatible devices should
recognize a start condition.
DATA
CLK
S
P
START Condition
STOP Condition
Figure 15. START and STOP Condition
The master then generates the SCL pulses, and transmits the 8-bit address and the read/write direction bit R/W
on the SDA line. During all transmissions, the master ensures that data is valid. A valid data condition requires
the SDA line to be stable during the entire high period of the clock pulse (see Figure 16). All devices recognize
the address sent by the master and compare it to their internal fixed addresses. Only the slave device with a
matching address generates an acknowledge (see Figure 17) by pulling the SDA line low during the entire high
period of the ninth SCL cycle. Upon detecting this acknowledge, the master knows that communication link with a
slave has been established.
DATA
CLK
Data Line
Stable;
Data Valid
Change
of Data
Allowed
Figure 16. Bit Transfer on the Serial Interface
The master generates further SCL cycles to either transmit data to the slave (R/W bit 0) or receive data from the
slave (R/W bit 1. In either case, the receiver needs to acknowledge the data sent by the transmitter. So an
acknowledge signal can either be generated by the master or by the slave, depending on which one is the
receiver. The 9-bit valid data sequences consisting of 8-bit data and 1-bit acknowledge can continue as long as
necessary. To signal the end of the data transfer, the master generates a stop condition by pulling the SDA line
from low to high while the SCL line is high (see Figure 15). This releases the bus and stops the communication
link with the addressed slave. All I2C compatible devices must recognize the stop condition. Upon the receipt of
a stop condition, all devices know that the bus is released, and wait for a start condition followed by a matching
address. If a transaction is terminated prematurely, the master needs to send a STOP condition to prevent the
slave I2C logic from remaining in a incorrect state. Attempting to read data from register addresses not listed in
this section will result in 0xFFh being read out.
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Programming (continued)
Data Output
by Transmitter
Not Acknowledge
Acknowledge
Data Output
by Receiver
SCL From
Master
9
8
1
2
Clock Pulse for
Acknowledgement
START
Condition
Figure 17. Acknowledge on the I2C Bus
Recognize START or
REPEATED START
Condition
Recognize STOP or
REPEATED START
Condition
Generate ACKNOWLEDGE
Signal
P
SDA
Acknowledgement
Signal From Slave
MSB
Sr
Address
R/W
SCL
Sr
or
P
S
or
Sr
ACK
ACK
Figure 18. Bus Protocol
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9.6 Register Maps
9.6.1 Status/Control Register (READ/WRITE)
Memory location: 00, Reset state: 00xx 0xxx
Figure 19. Status/Control Register
B7(MSB)
B6
0
B5
X
B4
X
B3
0
B2
X
B1
X
B0(LSB)
0
X
R
R/W
R/W
R
R
R/W
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 2. Status/Control Register Field Descriptions
BIT
FIELD(1) (2)
TYPE
DESCRIPTION
B7(MSB)
TMR_RST
R/W
Write: TMR_RST function, write 1 to reset the watchdog timer (auto clear)
Read: Always 0
(bq24260/1/1M only)
B6
EN_BOOST
R/W
0-Charger Mode
1-Boost Mode (default 0)
B5
B4
STAT_1
STAT_0
R
R
00-Ready
01-Charge in progress
10-Charge done
11-Fault
B3
EN_SHIPMODE
R/W
0-Normal Operation
1-Ship Mode Enabled (default 0)
B2
B1
FAULT_2
FAULT_1
FAULT_0
R
R
R
000-Normal
001-VIN > VOVP or Boost Mode OVP
010- Low Supply connected (VIN<VUVLO or VIN<VSLP) or Boost Mode Overcurrent
011- Thermal Shutdown
B0(LSB)
100-Battery Temperature Fault
101- Timer Fault (watchdog or safety timer)
110-Battery OVP
111-No Battery connected
(1) STAT_x bits show current status. These bits change based on the current condition. When a status change occurs, a single 128-µs
pulse on the STAT and INT outputs occur and the STATx and FAULT_x bits of the status registers are updated in the I2C. Once the
fault is removed, the STATx bits are updated to show the current status.
(2) FAULT_x bits show faults. If a fault occurs, these bits announce the fault and do not clear until read. If more than one fault occurs only
the highest priority fault is shown, ranked from 1 to 8 in the order shown in the table. When a fault occurs, a single 128-µs pulse on the
STAT and INT outputs occur and the STATx and FAULT_x bits of the status registers are updated in the I2C. The FAULT_x bits are not
cleared until they are read in the I2C and the fault condition no longer exists.
EN_BOOST Bit (Operation Mode)
The EN_BOOST bit selects the operation mode for the bq24260/1/1M/2. Write a 1 to enable boost mode
and regulate IN to 5V to supply OTG peripherals. See Boost Mode Operation for more details.
EN_SHIPMODE Bit
Writing the EN_SHIPMODE bit to a 1 latches off the IC, battery FET and BGATE until a high to low
transition on UVLO occurs. This means that if EN_SHIPMODE is written to a 1 while the input is
connected, it must first be removed and then replaced before the battery FET turns on. This allows the
end product with no load on the battery and the end user will enable the device by plugging it into the
adapter. The EN_SHIPMODE bit can be cleared using the I2C interface as well.
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9.6.2 Control Register (READ/WRITE)
Memory location: 01, Reset state: 1xxx 1100 (bq24260/2), 1xxx 1110 (bq24261/1M)
Figure 20. bq24260/2 Control Register
B7(MSB)
B6
X
B5
X
B4
X
B3
1
B2
1
B1
0
B0(LSB)
.0
1
W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Figure 21. bq24261/1M Control Register
B7(MSB)
B6
X
B5
X
B4
X
B3
1
B2
1
B1
1
B0(LSB)
0
1
W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 3. Control Register Field Descriptions
BIT
FIELD
TYPE
DESCRIPTION
B7(MSB)
RESET
W
Write: 1-Reset all registers to default values
0-No effect
Read: always get 1
B6
B5
B4
IN_LIMIT_2
IN_LIMIT_1
IN_LIMIT _0
R/W
R/W
R/W
000-USB2.0 host with 100-mA current limit
001-USB3.0 host with 150-mA current limit
010 – USB2.0 host with 500-mA current limit
011 – USB3.0 host/charger with 900-mA current limit
100 – Charger with 1500-mA current limit
101—Charger with 1950-mA current limit
110 – Charger with 2500-mA current limit
111- Charger with 2000-mA current limit (default 000(1)
)
B3
B2
EN_STAT
TE
R/W
R/W
R/W
R/W
0-Disable STAT function (STAT only shows faults)
1-Enable STAT function (default 1)
0-Disable charge current termination
1-Enable charge current termination (default 1)
B1
CE
0-Charger enabled
1-Charger is disabled (default 0-bq24260 / 2, 1-bq24261/1M)
B0(LSB)
HZ_MODE
0-Not high impedance mode
1-High impedance mode (default 0)
(1) When in DEFAULT mode, PSEL (bq24261/1M/2) determines the default input current limit.
RESET Bit
The RESET bit in the control register (0x01h) is used to reset all the charge parameters. Write 1 to
RESET bit to reset all the registers to default values and place the bq24260/1/1M/2 into DEFAULT mode
and turn off the watchdog timer. The RESET bit is automatically cleared to zero once the bq24260/1/1M/2
enters DEFAULT mode.
CE Bit (Charge Enable)
The CE bit is used to disable or enable the charge process. A low logic level (0) on this bit enables the
charge and a high logic level (1) disables the charge. When charge is disabled, the SYS output regulates
to VSYS(REG) and battery is disconnected from the SYS. Supplement mode is available if the system load
demands cannot be met by the supply.
HZ_MODE Bit (High Impedance Mode Enable)
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The HZ_MODE bit is used to disable or enable the high impedance mode. A low logic level (0) on this bit
enables the IC and a high logic level (1) puts the IC in a low quiescent current state called high
impedance mode. When in high impedance mode, the converter is off and the battery FET and BGATE
are on. The load on SYS is supplied by the battery. BGATE is low (external FET turned on) while in high
impedance mode.
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9.6.3 Control/Battery Voltage Register (READ/WRITE)
Memory location: 02, Reset state: 0001 0100 (BQ24260/1/1M), 1000 1100 (bq24262)
Figure 22. bq24260/1/1M Control/Battery Voltage Register
B7(MSB)
B6
0
B5
0
B4
0
B3
1
B2
1
B1
0
B0(LSB)
0
1
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Figure 23. bq24262 Control/Battery Voltage Register
B7(MSB)
B6
0
B5
0
B4
1
B3
0
B2
1
B1
0
B0(LSB)
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 4. Control/Battery Voltage Register Field Descriptions
BIT
B7(MSB)
B6
FIELD
VBREG5
TYPE
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
DESCRIPTION
Battery Regulation Voltage: 640 mV (default 0)
VBREG4
Battery Regulation Voltage: 320 mV (default 0)
Battery Regulation Voltage: 160 mV (default 0)
Battery Regulation Voltage: 80 mV (default 1)
Battery Regulation Voltage: 40 mV (default 0)
Battery Regulation Voltage: 20 mV (default 1)
B5
VBREG3
B4
VBREG2
B3
VBREG1
B2
VBREG0
B1
MOD_FREQ1
MOD_FREQ0
Modify Switching Frequency Target –
00 – No Change to Nominal Frequency Target
01 – +10% Change to Nominal Frequency
10 – -10% Change to Nominal Frequency
11 – NA (default 00)
B0(LSB)
VBREG Bits (Battery Regulation Threshold setting)
Use VBREG bits to set the battery regulation threshold. The VBATREG is calculated using the following
equation:
indent VBATREG = 3.5 V + VBREGCODE × 20 mV
The charge voltage range is 3.5 V to 4.44 V with the offset of 3.5 V and step of 20 mV. The default setting
is 3.6 V for the bq24260 and bq24261 and bq24261M. The default setting is 4.2 V for the bq24262. If a
value greater than 4.44 V is written, the setting goes to 4.44 V. It is recommended to set VBATREG above
VMINSYS
.
MOD_FREQx Bits (Frequency Modification)
The MOD_FREQx bits are used to change the switching frequency by ±10%. This is used for applications
where the 1.5MHz switching frequency noise interferes with other device operation. The frequency may
be modified by ±10% of the nominal frequency.
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9.6.4 Vender/Part/Revision Register (READ only)
Memory location: 03, Reset state: 0100 0110
Figure 24. Vender/Part/Revision Register
B7(MSB)
B6
1
B5
0
B4
0
B3
0
B2
1
B1
1
B0(LSB)
0
0
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 5. Vender/Part/Revision Register Field Descriptions
BIT
B7(MSB)
B6
FIELD
Vendor2
Vendor1
Vendor0
PN1
TYPE
R
DESCRIPTION
Vender Code: bit 2 (default 0)
Vender Code: bit 1 (default 1)
Vender Code: bit 0 (default 0)
R
B5
R
B4
R
For I2C Address 6Bh: 00 – bq24260/1/1M/2
B3
PN0
R
B2
NA
R
NA
NA
NA
B1
NA
R
B0(LSB)
NA
R
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9.6.5 Battery Termination/Fast Charge Current Register (READ/WRITE)
Memory location: 04, Reset state: 0010 1010
Figure 25. Battery Termination/Fast Charge Current Register
B7(MSB)
B6
0
B5
1
B4
0
B3
1
B2
0
B1
1
B0(LSB)
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 6. Battery Termination/Fast Charge Current Register Field Descriptions
BIT
B7(MSB)
B6
FIELD
ICHRG4
ICHRG3
ICHRG2
ICHRG1
ICHRG0
ITERM2
ITERM1
ITERM0
TYPE
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
DESCRIPTION
Charge current 1600 mA – (default 0)
Charge current: 800 mA — (default 0)
B5
Charge current: 400 mA —(default 1)
B4
Charge current: 200 mA — (default 0)
B3
Charge current: 100 mA (default 1)
B2
Termination current sense: 200 mA (default 0)
Termination current sense voltage: 100 mA (default 1)
Termination current sense voltage: 50 mA (default 0)
B1
B0(LSB)
ICHRG Bits (Charge Current Regulation Threshold setting)
Use ICHRG bits to set the charge current regulation threshold. The charge current is programmable from
500 mA to 3 A in 100 mA steps. The default is 1 A. The ICHARGE is calculated using the following equation:
indentICHARGE = 500 mA + ICHRGCODE × 100 mA
Any setting programmed above 3 A selects the 3-A setting.
ITERM Bits (Charge Current Termination Threshold setting)
Use ITERM bits to set the charge current termination threshold. The termination threshold is programmable
from 50 mA to 300 mA in 50-mA steps. The default is 150 mA. The ITERM is calculated using the following
equation:
indentITERM = 50 mA + ITERMCODE × 50 mA
Any setting programmed above 300 mA selects the 300-mA setting.
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9.6.6 VIN-DPM Voltage/ MINSYS Status Register
Memory location: 05, Reset state: xx00 x000
Figure 26. VIN-DPM Voltage/ MINSYS Status Register
B7(MSB)
B6
X
B5
0
B4
0
B3
X
B2
0
B1
0
B0(LSB)
0
X
R
R
R/W
R/W
R
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 7. VIN-DPM Voltage/ MINSYS Status Register Field Descriptions
BIT
FIELD
TYPE
DESCRIPTION
B7(MSB)
MINSYS_STATUS
R
0 – Minimum System Voltage mode is not active
1 – Minimum System Voltage mode is active (low battery
B6
B5
B4
B3
VINDPM_STATUS
LOW_CHG
R
0 – VIN-DPM mode is not active
1 – VIN-DPM mode is active
R/W
R/W
R
0 – Normal charge current set by 04h
1 – Low charge current setting 300 mA (default 0)
FORCE_D+D-
CD_STATUS
0 - Detection complete
1 - Force D+/D- detection (bq24260 only)
0 – CD low, IC enabled
1 – CD high, IC disabled
B2
B1
VINDPM2
VINDPM1
VINDPM0
R/W
R/W
R/W
Input VIN-DPM voltage: VDPMOFF + 8% (default 0)
Input VIN-DPM voltage: VDPMOFF + 4% (default 0)
Input VIN-DPM voltage: VDPMOFF + 2% (default 0)
B0(LSB)
•
VIN-DPM voltage offset is programmable using the VINDPM_OFF bit (bit 0 of register 0x06) and default VIN-DPM
threshold is 4.2 V.
LOW_CHG Bit (Low Charge Mode Enable)
The LOW_CHG bit is used to reduce the charge current to a minimum current. This feature is used by
systems where battery NTC is monitored by the host and requires a reduced charge current setting or by
systems that need a “preconditioning” current for low battery voltages. Write a 1 to this bit to charge at
300 mA. Write a 0 to this bit to charge at the programmed charge current.
VINDPM Bits (VINDPM Threshold setting)
Use VINDPM bits to set the VINDPM regulation threshold. The VINDPM threshold is calculated using the
following equation:
indentVINDPM = VINDPM_OFF + VINDPMCODE × 2% × VINDPM_OFF
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bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
9.6.7 Safety Timer/ NTC Monitor Register (READ/WRITE)
Memory location: 06, Reset state: 1001 1xx0
Figure 27. Safety Timer/ NTC Monitor Register
B7(MSB)
B6
0
B5
0
B4
1
B3
1
B2
X
B1
X
B0(LSB)
0
1
R/W
R/W
R/W
R/W
R/W
R
R
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 8. Safety Timer/ NTC Monitor Register Field Descriptions
BIT
FIELD
TYPE
DESCRIPTION
B7(MSB)
2XTMR_EN
R/W
0 – Timer not slowed at any time
1 – Timer slowed by 2× when in thermal regulation, VIN_DPM or input current limit
(default 1)
B6
B5
TMR_1
TMR_2
R/W
R/W
Safety Timer Time Limit –
00 – 1.25 minute fast charge
01 – 6 hour fast charge
10 – 9 hour fast charge
11 – Disable safety timers (default 00)
(bq24260/1/1M only)
B4
B3
BOOST_ILIM
TS_EN
R/W
R/W
0 – 500 mA
1 – 1 A (Default 1)
0 – TS function disabled
1 – TS function enabled (default 1)
B2
B1
TS_FAULT1
TS_FAULT0
R
R
TS Fault Mode:
00 – Normal, No TS fault
01 – TS temp < TCOLD or TS temp > THOT(Charging suspended)
10 – TCOOL > TS temp > TCOLD (Charge current reduced by half)
11 – TWARM < TS temp < THOT (Charge voltage reduced by 100mV)
B0(LSB)
VINDPM_OFF
R/W
0 – 4.2 V
1 – 10.1 V
(Default 0)
BOOST_ILIM Bit (Boost current limit setting)
The BOOST_ILIM bit programs the cycle by cycle current limit threshold for boost operation. The 1-A
setting sets the low side cycle by cycle current limit to 4 A (typical). This ensures that at least 1 A can be
supplied from the boost converter over the entire battery range. The 500-mA setting sets the current limit
to 2 A (typ) to ensure at least 500 mA available from the boost converter. See Output Overcurrent
Protection for more details.
VINDPM_OFF Bit (VINDPM offset setting)
The VINDPM_OFF bit programs the offset for the VINDPM function. The 4.2-V setting is intended to work
with a standard 5-V output adapter. The 10.1-V setting supports 12-V adapters and the 12-V output for
the new USB Power Delivery specification (USB PD).
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The bq24260EVM-079 evaluation module (EVM) is a complete charger module for evaluating the bq24260. The
application curves were taken using the bq24260EVM-079. See Related Documentation for details.
The EVM supports both typical application circuits shown below through board options. Figure 28 shows the
bq24261 using PSEL for the input current limit selection. Figure 28 shows the bq24260 using D+/D– for the input
current limit selection. Figure 28 also shows the addition of an external battery FET. This external FET can be
used with the bq24260/1/1M/2 to provide lower loss discharge path from the battery, and is controlled by the
BGATE pin.
10.2 Typical Application
1.5 µH
PMID
SW
10 µF
1 µF
System
Load
0.033 µF
BOOT
SYS
VBUS
D+
IN
D-
10 µF
GND
Optional FET
4.7 µF
BGATE
BAT
DRV
DRV
5.62 k
2.2 µF
DRV
1 µF
PGND
TS
PACK+
STAT
TEMP
1.5 k
VI/O
(1.8 V)
12.4 k
PSEL(bq24261)
USB PHY
PACK-
1.5 k
HOST
INT
SDA
SCL
GPIO
D+
(bq24260)
SDA
SCL
D-
GPIO
CD
Figure 28. bq24260/1 Typical Application Circuit
38
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bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
Typical Application (continued)
10.2.1 Design Requirements
For this example, use the parameters listed in Table 9.
Table 9. Design Requirements
DESIGN PARAMATER
Input Voltage Range
Input Current Limit
EXAMPLE VALUE
4.75 V to 5.25 V nominal, withstand 28 V
2500 mA
4.25 V
Input DPM Threshold
Fast Charge Current
Battery Charge Voltage
Termination Current
3000 mA
4.2 V
50 mA
10.2.2 Detailed Design Procedure
Following the guidance in the next section, the capacitors on IN, PMID, SYS, BAT and BOOT are the minimum
recommended values of 4.7 µF, 1 µF, 10 µF, 1 µF, and 0.033 µF, respectively. It is assumed that at least 10 µF
of additional capacitance is on the SYS rail. To minimize footprint, a 1.5-µH inductor with at least 3.5-A saturation
current is selected. The optional FET, with gate connected at BGATE, only turns on in high-impedance mode (for
example, no input power/battery only) to reduce the losses across the internal battery FET of the IC . See the
bq24261EVM for exact part numbers. Pullup resistors for STAT and INT of 1.5 kΩ were selected per the current
requirements of the LED. The values for the resistor divider on TS were found using Equation 1 and Equation 2,
where RHOT is the resistance of the NTC thermistor at the hot temperature, RCOLD is the resistance of the
thermistor at cold temperature, VDRV = 5 V, VHOT = 0.3 × VDRV and VCOLD = 0.6 x VDRV
.
Many parameters configurable by the I2C registers can be changed by using the EVM software.
10.2.2.1 Output Inductor and Capacitor Selection Guidelines
When selecting an inductor, several attributes must be examined to find the right part for the application. First,
the inductance value should be selected. The bq2426x is designed to work with 1.5-µH to 2.2-µH inductors. The
chosen value will have an effect on efficiency and package size. Due to the smaller current ripple, some
efficiency gain is reached using the 2.2-µH inductor. However, due to the physical size of the inductor, this option
may not be viable. The 1.5-µH inductor provides a good tradeoff between size and efficiency.
Once the inductance has been selected, the peak current must be calculated in order to choose the current
rating of the inductor. Use Equation 5 to calculate the peak current.
%
æ
ö
RIPPPLE
IPEAK = ILOAD(MAX) ´ 1+
ç
÷
2
è
ø
(5)
The inductor selected must have a saturation current rating greater than or equal to the calculated IPEAK. Due to
the high currents possible with the bq24260/1/1M/2, a thermal analysis must also be done for the inductor. Many
inductors have 40°C temperature rise rating. This is the DC current that will cause a 40°C temperature rise
above the ambient temperature in the inductor. For this analysis, the typical load current may be used adjusted
for the duty cycle of the load transients. For example, if the application requires a 1.5-A DC load with peaks at
2.5 A 20% of the time, a Δ40°C temperature rise current must be greater than 1.7 A:
ITEMPRISE = ILOAD + D × (IPEAK – ILOAD) = 1.5 A + 0.2 × (2.5 A – 1.5 A) = 1.7 A
(6)
The internal loop compensation of the bq24260/1/1M/2 is designed to be stable with 10 µF to 150 µF of local
capacitance but requires at least 20 µF total capacitance on the SYS rail (10 µF local + ≥ 10 µF distributed). The
capacitance on the SYS rail can be higher than 150 µF if distributed amongst the rail. To reduce the output
voltage ripple, a ceramic capacitor with the capacitance between 10 µF and 47 µF is recommended for local
bypass to SYS. If greater than 100 µF effective capacitance is on the SYS rail, place at least 10-µF bypass on
the BAT terminal. Pay special attention to the DC bias characteristics of ceramic capacitors. For small case
sizes, the capacitance can be derated as high as 70% at workable voltages. All capacitances specified in this
data sheet are effective capacitance, not capacitor value.
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10.2.3 Application Curves
Figure 29. Start-up With No Battery
Figure 30. Battery Detection
Figure 31. Battery Removal
Figure 32. Default Start-up - bq24260
(D+/D– Shorted)
Figure 33. Default Start-up - bq24260
(D+/D– Not Shorted)
Figure 34. VSYS Transient Without Supplement Mode
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bq24260, bq24261, bq24261M, bq24262
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SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
Figure 36. VSYS Transient With Supplement Mode
Figure 35. VSYS Transient With Supplement Mode
Figure 38. Boost Burst Mode During Light Load
Figure 37. Boost Start-up No Load
Figure 39. Boost Start-up 1-A Load
Figure 40. Boost Transient Response
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bq24260, bq24261, bq24261M, bq24262
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
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Figure 42. Start-up, 4.2 V
Figure 41. Input OVP Event With INT
42
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bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
11 Power Supply Recommendations
11.1 Requirements for SYS Output
In order to provide an output voltage on SYS, the bq2426x requires either a power supply between 4.2 V and 6 V
input on all versions, 4.2 V and 6.5 V for IN input on bq24262, 4.2 V and 10.5 V on bq24260, and 4.2 and 14 V
on bq24261/M with at least 100 mA current rating connected to IN; or, a single-cell Li-Ion battery with voltage >
VBATUVLO connected to BAT. The source current rating must be at least 2.5 A for the buck converter of the
charger to provide maximum output power to SYS.
11.2 Requirements for Charging
In order for charging to occur the source voltage measured at the IN terminals of the IC, factoring in cable/trace
losses from the source, must be greater than the VINDPM threshold, but less than the maximum values shown
above. The current rating of the source must be higher than the buck converter needs to provide the load on
SYS. For charging at a desired charge current of ICHRG, VIN × IIN × η > VSYS × (ISYS+ ICHRG) where η is the
efficiency estimate from Figure 2 or Figure 3 and VSYS = VBAT when VBAT charges above VMINSYS. The
charger limits IIN to the current limit setting of that input. With ISYS = 0 A, the charger consumes maximum
power at the end of CC mode, when the voltage at the BAT terminal is near VBATREG but ICHRG has not
started to taper off toward ITERM.
12 Layout
12.1 Layout Guidelines
The following provides some guidelines:
•
Place 1-µF input capacitor as close to PMID terminal and PGND terminal as possible to make high-frequency
current loop area as small as possible.
•
•
Connect the GND of the PMID and IN capacitors as close as possible.
Place 4.7-µF input capacitor as close to IN terminal and PGND terminal as possible to make high-frequency
current loop area as small as possible.
•
•
•
The local bypass capacitor from SYS to GND should be connected between the SYS terminal and PGND of
the IC. The intent is to minimize the current path loop area from the SW terminal through the LC filter and
back to the PGND terminal.
Place all decoupling capacitors close to their respective IC terminal and as close as to PGND as possible. Do
not place components such that routing interrupts power stage currents. All small control signals should be
routed away from the high current paths.
The PCB should have a ground plane (return) connected directly to the return of all components through vias.
Two vias per capacitor for power-stage capacitors and one via per capacitor for small-signal components. TI
also recommends putting vias inside the PGND pads for the IC, if possible. A star ground design approach is
typically used to keep circuit block currents isolated (high-power/low-power small-signal) which reduces noise-
coupling and ground-bounce issues. A single ground plane for this design gives good results.
•
•
The high-current charge paths into IN, BAT, SYS and from the SW terminals must be sized appropriately for
the maximum charge current in order to avoid voltage drops in these traces. The PGND terminals should be
connected to the ground plane to return current through the internal low-side FET.
For high-current applications, the balls for the power paths should be connected to as much copper in the
board as possible. This allows better thermal performance as the board pulls heat away from the IC.
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SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
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12.2 Layout Example
It is important to pay special attention to the PCB layout. Figure 43 provides a sample layout for the high current
paths of the bq2426xYFF. Figure 44 provides a sample layout for the high current paths of the bq2426xRGE.
PMID and IN
Cap Gnds
close together
PMID
PGND
SW
IN cap close
to IN pin
BOOT
Thermal vias
connect to
PGND
SYS cap
close to
SYS pins
BAT cap close
to BAT pins
Figure 43. Recommended bq2426x PCB Layout for WCSP Package
sp
PGND
SW
PMID
BOOT
PMID and IN
Cap Gnds
Close together
SYS Cap
Close to
SYS Pins
IN Cap
Close to
IN Pin
BAT Cap
Close to
BAT Pins
Thermal
Vias connect
To GND
Figure 44. Recommended bq2426x PCB Layout for QFN Package
44
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bq24260, bq24261, bq24261M, bq24262
www.ti.com
SLUSBU4D –DECEMBER 2013–REVISED APRIL 2015
13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
User's Guide for WCSP Packaged bq24260, bq24261 and bq24262A 3-A Battery Charger Evaluation Module,
SLUUAB0.
User's Guide for QFN Packaged bq24260, bq24261, and bq24262 3-A Battery Charger Evaluation Module,
SLUUAV8.
3A, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger Evaluation Module,
http://www.ti.com/tool/bq24261evm-611.
Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger Evaluation Module,
http://www.ti.com/tool/bq24261evm-079.
EVM Software, SLUC519
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 10. Related Links
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
PARTS
PRODUCT FOLDER
SAMPLE & BUY
bq24260
bq24261
bq24262
bq24261M
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
13.3 Trademarks
All trademarks are the property of their respective owners.
13.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
29-May-2015
PACKAGING INFORMATION
Orderable Device
BQ24260RGER
BQ24260RGET
BQ24260YFFR
BQ24260YFFT
BQ24261MRGER
BQ24261MRGET
BQ24261MYFFR
BQ24261MYFFT
BQ24261RGER
BQ24261RGET
BQ24261YFFR
BQ24261YFFT
BQ24262RGER
BQ24262RGET
BQ24262YFFR
BQ24262YFFT
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
NRND
VQFN
VQFN
RGE
24
24
36
36
24
24
36
36
24
24
36
36
24
24
36
36
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
CU NIPDAU
SNAGCU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
BQ
24260
NRND
NRND
RGE
YFF
YFF
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
250
3000
250
Green (RoHS
& no Sb/Br)
BQ
24260
DSBGA
DSBGA
VQFN
Green (RoHS
& no Sb/Br)
BQ24260
NRND
Green (RoHS
& no Sb/Br)
SNAGCU
BQ24260
ACTIVE
ACTIVE
ACTIVE
ACTIVE
NRND
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
CU NIPDAU
SNAGCU
BQ
24261M
VQFN
Green (RoHS
& no Sb/Br)
BQ
24261M
DSBGA
DSBGA
VQFN
3000
250
Green (RoHS
& no Sb/Br)
BQ24261M
Green (RoHS
& no Sb/Br)
SNAGCU
BQ24261M
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
CU NIPDAU
SNAGCU
BQ
24261
NRND
VQFN
Green (RoHS
& no Sb/Br)
BQ
24261
NRND
DSBGA
DSBGA
VQFN
3000
250
Green (RoHS
& no Sb/Br)
BQ24261
NRND
Green (RoHS
& no Sb/Br)
SNAGCU
BQ24261
ACTIVE
ACTIVE
ACTIVE
ACTIVE
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
CU NIPDAU
SNAGCU
BQ
24262
VQFN
Green (RoHS
& no Sb/Br)
BQ
24262
DSBGA
DSBGA
3000
250
Green (RoHS
& no Sb/Br)
BQ24262
Green (RoHS
& no Sb/Br)
SNAGCU
BQ24262
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
29-May-2015
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Jun-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ24260RGER
BQ24260RGET
BQ24260YFFR
BQ24260YFFT
BQ24261MRGER
BQ24261MRGET
BQ24261MYFFR
BQ24261MYFFT
BQ24261RGER
BQ24261RGET
BQ24261YFFR
BQ24261YFFT
BQ24262RGER
BQ24262RGET
BQ24262YFFR
BQ24262YFFT
VQFN
VQFN
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
24
24
36
36
24
24
36
36
24
24
36
36
24
24
36
36
3000
250
330.0
180.0
180.0
180.0
330.0
180.0
180.0
180.0
330.0
180.0
180.0
180.0
330.0
180.0
180.0
180.0
12.4
12.4
8.4
4.25
4.25
2.54
2.54
4.25
4.25
2.54
2.54
4.25
4.25
2.54
2.54
4.25
4.25
2.54
2.54
4.25
4.25
2.54
2.54
4.25
4.25
2.54
2.54
4.25
4.25
2.54
2.54
4.25
4.25
2.54
2.54
1.15
1.15
0.76
0.76
1.15
1.15
0.76
0.76
1.15
1.15
0.76
0.76
1.15
1.15
0.76
0.76
8.0
8.0
4.0
4.0
8.0
8.0
4.0
4.0
8.0
8.0
4.0
4.0
8.0
8.0
4.0
4.0
12.0
12.0
8.0
Q2
Q2
Q1
Q1
Q2
Q2
Q1
Q1
Q2
Q2
Q1
Q1
Q2
Q2
Q1
Q1
DSBGA
DSBGA
VQFN
3000
250
8.4
8.0
3000
250
12.4
12.4
8.4
12.0
12.0
8.0
VQFN
DSBGA
DSBGA
VQFN
3000
250
8.4
8.0
3000
250
12.4
12.4
8.4
12.0
12.0
8.0
VQFN
DSBGA
DSBGA
VQFN
3000
250
8.4
8.0
3000
250
12.4
12.4
8.4
12.0
12.0
8.0
VQFN
DSBGA
DSBGA
3000
250
8.4
8.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Jun-2015
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
BQ24260RGER
BQ24260RGET
BQ24260YFFR
BQ24260YFFT
BQ24261MRGER
BQ24261MRGET
BQ24261MYFFR
BQ24261MYFFT
BQ24261RGER
BQ24261RGET
BQ24261YFFR
BQ24261YFFT
BQ24262RGER
BQ24262RGET
BQ24262YFFR
BQ24262YFFT
VQFN
VQFN
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
RGE
RGE
YFF
YFF
24
24
36
36
24
24
36
36
24
24
36
36
24
24
36
36
3000
250
367.0
210.0
182.0
182.0
367.0
210.0
182.0
182.0
367.0
210.0
182.0
182.0
367.0
210.0
182.0
182.0
367.0
185.0
182.0
182.0
367.0
185.0
182.0
182.0
367.0
185.0
182.0
182.0
367.0
185.0
182.0
182.0
35.0
35.0
20.0
20.0
35.0
35.0
20.0
20.0
35.0
35.0
20.0
20.0
35.0
35.0
20.0
20.0
DSBGA
DSBGA
VQFN
3000
250
3000
250
VQFN
DSBGA
DSBGA
VQFN
3000
250
3000
250
VQFN
DSBGA
DSBGA
VQFN
3000
250
3000
250
VQFN
DSBGA
DSBGA
3000
250
Pack Materials-Page 2
PACKAGE OUTLINE
YFF0036
DSBGA - 0.625 mm max height
S
C
A
L
E
4
.
5
0
0
DIE SIZE BALL GRID ARRAY
B
E
A
BUMP A1
CORNER
D
C
0.625 MAX
SEATING PLANE
0.05 C
BALL TYP
0.30
0.12
2 TYP
SYMM
F
E
D: Max = 2.485 mm, Min =2.425 mm
E: Max = 2.485 mm, Min =2.425 mm
D
C
SYMM
2
TYP
B
A
0.3
0.2
36X
0.015
C A
B
0.4 TYP
1
2
4
5
6
3
0.4 TYP
4222008/A 03/2015
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
YFF0036
DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
3
36X ( 0.23)
(0.4) TYP
1
2
4
5
6
A
B
C
SYMM
D
E
F
SYMM
LAND PATTERN EXAMPLE
SCALE:25X
0.05 MAX
0.05 MIN
(
0.23)
(
0.23)
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON-SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4222008/A 03/2015
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YFF0036
DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
36X ( 0.25)
(R0.05) TYP
1
3
4
5
2
6
A
B
(0.4)
TYP
METAL
TYP
C
D
E
F
SYMM
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:30X
4222008/A 03/2015
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
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