BQ24261YFFR [TI]

3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger; 3A , 30V ,主机控制的单输入单节开关模式锂离子电池充电器
BQ24261YFFR
型号: BQ24261YFFR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger
3A , 30V ,主机控制的单输入单节开关模式锂离子电池充电器

电源电路 电池 开关 电源管理电路
文件: 总46页 (文件大小:6770K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
bq24260  
bq24261  
bq24262A  
www.ti.com  
SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger with  
Power Path Management and USB-OTG Support  
Check for Samples: bq24260, bq24261, bq24262A  
1
FEATURES  
Thermal Regulation Protection for Input  
Current Control  
Charge Time Optimizer (Enhanced CC/CV  
Transition) for Faster Charging  
Thermal Shutdown and Protection  
Integrated FETs for Up to 3A Charge Rate at  
5% Accuracy and 93% Peak Efficiency  
APPLICATIONS  
Smartphone and Tablets  
Boost Capability to Supply 5V at 1A at IN for  
USB OTG Supply  
Handheld Products  
Integrated 17mΩ Power Path MOSFET and  
optional BGATE control to Maximize Battery  
Life and Instantly Startup From a Deeply  
Discharged Battery or No Battery  
Power Banks and External Battery Packs  
Small Power Tools  
Portable Media Players and Gaming  
30V Input Rating with Over-Voltage Protection  
Supports 5V USB2.0/3.0 and 12V USB Power  
Delivery (bq24261)  
DESCRIPTION  
The  
bq24260/bq24261/bq24262A  
are  
highly  
integrated single cell Li-Ion battery charger and  
system power path management devices targeted for  
space-limited, portable applications with high capacity  
batteries. The single cell charger has a single input  
that supports operation from either a USB port or wall  
adapter supply for a versatile solution. (Continued on  
page 2)  
Small Solution Size In a 2.4mm x 2.4mm 36-  
ball WCSP or 4mm x 4mm QFN-24 Package  
Total Charging Solution Can be 50mm2 or  
less with WCSP  
Safe and Accurate Battery Management  
Functions Programmed Using I2C Interface  
Charge Voltage, Current, Termination  
Threshold, Input Current Limit, VIN_DPM  
Threshold  
Voltage-based, JEITA Compatible NTC  
Monitoring Input  
Application Schematic  
Charge Time Optimizer Effect  
Charge Cycle 4000mAh Battery 2A Charge Rate  
3
4.4  
4.2  
4
IN  
SW  
BOOT  
SYS  
VBUS  
D+  
D-  
2.5  
2
System  
Load  
GND  
PGND  
PMID  
3.8  
3.6  
3.4  
3.2  
3
`
More Energy  
Delivered to  
the Battery  
in the Same  
Time  
1.5  
1
`
D+  
D-  
BAT  
TS  
CD  
SDA  
SCL  
2.8  
2.6  
2.4  
0.5  
bq24260  
HOST  
INT  
PACK+  
TEMP  
0
VDRV  
0
2000  
4000  
6000  
8000  
10000 11000  
Time (sec)  
PACK-  
V I/O  
VBAT_CTO  
VBAT_Traditional  
IBAT_CTO  
IBAT_Traditional  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2013–2014, Texas Instruments Incorporated  
bq24260  
bq24261  
bq24262A  
SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
www.ti.com  
DESCRIPTION (CONTINUED)  
The power path management feature allows the bq2426x to power the system from a high efficiency DC to DC  
converter while simultaneously and independently charging the battery. The charger monitors the battery current  
at all times and reduces the charge current when the system load requires current above the input current limit or  
the adapter cannot support the required load, causing the adapter voltage to fall (VIN_DPM). This allows for proper  
charge termination and timer operation. The system voltage is regulated to the battery voltage but will not drop  
below 3.5V (VMINSYS). This minimum system voltage support enables the system to run with a defective or absent  
battery pack and enables instant system turn-on even with a totally discharged battery or no battery. The power-  
path management architecture also permits the battery to supplement the system current requirements when the  
adapter cannot deliver the peak system currents. The power-path feature coupled with VIN-DPM, enables the use  
of many adapters with no hardware change. The charge parameters are programmable using the I2C interface.  
To Support USB OTG applications, the bq2426x is configurable to boost the battery voltage to 5V at the input. In  
this mode, the bq2426x supplies up to 1A and operates with battery voltages down to 3.3V.  
The battery is charged using a standard Li-Ion charge profile with three phases: precharge, constant current and  
constant voltage. In all charge phases, an internal control loop monitors the IC junction temperature and reduces  
the input current to prevent the junction temperature from rising above 125°C. Additionally, a voltage-based,  
JEITA compatible battery pack thermistor monitoring input (TS) is included that monitors battery temperature and  
automatically changes charge parameters to prevent the battery from charging outside of its safe temperature  
range.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Available Options  
I2C  
ADDRESS  
PART  
NUMBER  
D+/D–  
DETECTION  
TIMERS (SAFETY and  
WATCHDOG)  
NTC  
MONITORING  
OTG  
BOOST  
OVP  
10.5  
14  
CE BIT DEFAULT  
0
bq24260  
bq24261  
bq24262A  
YES  
NO  
YES  
YES  
NO  
JEITA  
JEITA  
JEITA  
YES  
YES  
YES  
6B  
6B  
6B  
(Charge Enabled)  
1
(Charge Disabled)  
0
6.5  
NO  
(Charge Enabled)  
Ordering Information  
ORDERABLE  
NUMBER  
PART NUMBER  
IC MARKING  
PACKAGE  
QUANTITY  
DSBGA - YFF (PREVIEW)  
DSBGA - YFF (PREVIEW)  
QFN – RGE (PREVIEW)  
QFN – RGE (PREVIEW)  
DSBGA - YFF  
bq24260YFFR  
bq24260YFFT  
bq24260RGER  
bq24260RGET  
bq24261YFFR  
bq24261YFFT  
bq24261RGER  
bq24261RGET  
bq24262AYFFR  
bq24262AYFFT  
3000  
250  
bq24260  
bq24260  
3000  
250  
3000  
250  
DSBGA - YFF  
bq24261  
bq24261  
QFN – RGE  
3000  
250  
QFN – RGE  
DSBGA - YFF (PREVIEW)  
DSBGA - YFF (PREVIEW)  
3000  
250  
bq24262A  
bq24262A  
2
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Copyright © 2013–2014, Texas Instruments Incorporated  
Product Folder Links: bq24260 bq24261 bq24262A  
 
bq24260  
bq24261  
bq24262A  
www.ti.com  
SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
Absolute Maximum Ratings(1)  
over operating free-air temperature range (unless otherwise noted)  
VALUE  
UNIT  
MIN  
–1.3  
–0.3  
–0.7  
–0.3  
MAX  
30  
30  
20  
5
IN  
BOOT, PMID  
Pin Voltage Range (with respect  
to PGND)  
V
SW  
BAT, BGATE, CD, D+, D-, DRV, INT, PSEL, SDA, SCL, STAT,  
SYS, TS  
BOOT to SW  
–0.3  
5
V
A
SW  
4.5  
3.5  
2.75  
10  
Output Current (Continuous)  
SYS, BAT (charging/ discharging)  
Input Current (Continuous)  
Output Sink Current  
A
STAT, INT  
mA  
Operating free-air temperature range  
Junction temperature, TJ  
–40  
–40  
85  
°C  
°C  
125  
300  
Storage temperature, TSTG  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage  
values are with respect to the network ground terminal unless otherwise noted.  
THERMAL INFORMATION  
bq2426x  
THERMAL METRIC(1)  
UNITS  
YFF (36 PINS)  
RGE (24 PINS)  
θJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
55.8  
0.5  
10  
32.6  
30.5  
3.3  
θJCtop  
θJB  
°C/W  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
2.6  
9.9  
N/A  
0.4  
ψJB  
9.3  
θJCbot  
2.6  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
spacer  
Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.2  
4.2  
4.2  
4.2  
NOM  
MAX UNIT  
28(1)  
IN voltage range  
IN operating voltage range (bq24260)  
IN operating voltage range (bq24261)  
IN operating voltage range (bq24262A)  
Input current, IN input  
10  
V
VIN  
13.2  
6.0  
IIN  
2.5  
3
A
A
ISW  
Output Current from SW, DC  
IBAT, ISYS Charging  
Discharging, using internal battery FET  
Operating junction temperature range  
3
A
3
TJ  
0
125  
°C  
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOT or SW pins. A tight  
layout minimizes switching noise.  
Copyright © 2013–2014, Texas Instruments Incorporated  
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3
Product Folder Links: bq24260 bq24261 bq24262A  
bq24260  
bq24261  
bq24262A  
SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
www.ti.com  
ELECTRICAL CHARACTERISTICS  
Circuit of Figure 1, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
INPUT CURRENTS  
VUVLO < VIN < VOVP and VIN>VBAT+VSLP  
PWM switching  
15  
YFF Package: VUVLO < VIN < VOVP and VIN>VBAT+VSLP  
PWM NOT switching  
6.5  
mA  
μA  
μA  
IIN  
Supply current for control  
RGE Package: VUVLO < VIN < VOVP and VIN>VBAT+VSLP  
PWM NOT switching  
6.65  
250  
15  
0°C< TJ < 85°C, VIN = 5V, High-Z Mode  
0°C< TJ < 85°C, VBAT = 4.2 V, VIN = 5V,  
SCL, SDA = 0V or 1.8V, High-Z Mode  
Battery discharge current in  
High Impedance mode,  
(BAT, SW, SYS)  
YFF Package: 0°C< TJ < 85°C, VBAT = 4.2 V, VIN = 0V,  
SCL, SDA = 0V or 1.8V  
IBAT_HIZ  
77  
80  
RGE Package: 0°C< TJ < 85°C, VBAT = 4.2 V, VIN = 0V,  
SCL, SDA = 0V or 1.8V  
POWER-PATH MANAGEMENT  
VMINSYS  
+ 80mV  
VMINSYS  
+ 100mV + 120mV  
VMINSYS  
VSYSREG(LO) System Regulation Voltage  
VBAT < VMINSYS  
V
Battery FET turned off, no charging,  
VBAT > 3.5V  
VBATREG  
+2.2%  
VBATREG  
+2.5%  
VBATREG  
+2.77%  
VSYSREG(HI)  
VMINSYS  
System Regulation Voltage  
V
V
Minimum System Voltage  
Regulation Threshold  
VBAT + VDO(SYS_BAT) < 3.5V  
3.44  
3.5  
8
3.55  
tDGL(MINSYS_C Deglitch time, VMINSYS  
ms  
V
comparator rising  
MP)  
Enter supplement mode  
threshold  
VBAT  
VBSUP1  
VBAT > VBUVLO  
20mV  
Exit supplement mode  
threshold  
VBAT –  
5mV  
VBSUP2  
VBAT > VBUVLO  
V
Current Limit, Discharge or  
ILIM(DISCH)  
VLIM(BGATE) = VBAT – VSYS  
4
6
A
Supplement Mode  
Deglitch Time, OUT Short  
tDGL(SC1)  
Circuit during Discharge or  
Supplement Mode  
Measured from IBAT = 7A to FET off  
250  
2
μs  
Recovery time, OUT Short  
Circuit during Discharge or  
Supplement Mode  
tREC(SC1)  
s
Battery Range for BGATE  
Operation  
2.5  
4.5  
V
BATTERY CHARGER  
YFF  
17  
32  
25  
47  
Measured from BAT to SYS,  
VBAT = 4.2V, High-Z mode  
Internal battery charger  
RON(BAT-SYS)  
mΩ  
MOSFET on-resistance  
Charge Voltage  
RGE  
Operating in voltage regulation, Programmable Range  
TJ = 0°C to 50°C  
3.5  
4.44  
V
RGE Package Voltage  
Regulation Accuracy  
-0.5%  
0.5%  
0.7%  
1.0%  
0.8%  
RGE Package Voltage  
Regulation Accuracy  
TJ = 0°C to 85°C  
TJ = 0°C to 125°C  
TJ = 0°C to 125°C  
-0.7%  
-1.0%  
–1.7%  
VBATREG  
RGE Package Voltage  
Regulation Accuracy  
YFF Package Voltage  
Regulation Accuracy  
Fast Charge Current Range  
V
BATSHRT VBAT < VBAT(REG)  
500  
–10%  
–5%  
3000  
10%  
5%  
mA  
ICHARGE  
500 mA ICHARGE 1A  
Fast Charge Current  
Accuracy  
ICHARGE > 1000 mA  
Battery short circuit  
threshold  
VBATSHRT  
1.9  
2
2.1  
V
VBATSHRT_HY  
Hysteresis for VBATSHRT  
Battery voltage falling  
100  
mV  
S
4
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Copyright © 2013–2014, Texas Instruments Incorporated  
Product Folder Links: bq24260 bq24261 bq24262A  
 
bq24260  
bq24261  
bq24262A  
www.ti.com  
SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
ELECTRICAL CHARACTERISTICS (continued)  
Circuit of Figure 1, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Deglitch time for battery  
short to fastcharge transition  
VBAT rising or falling  
VBAT < VBATSHRT  
1
ms  
Battery short circuit charge  
current  
IBATSHRT  
33.5  
50  
32  
66.5  
mA  
ms  
I
TERM 50 mA  
50 mA < ITERM < 200 mA  
TERM 200 mA  
–30%  
–15%  
–15%  
30%  
15%  
10%  
ITERM  
Termination charge current  
I
Both rising and falling, 2-mV over-drive,  
tRISE, tFALL=100ns  
Deglitch time for charge  
termination  
tDGL(TERM)  
VRCH  
Recharge threshold voltage  
Deglitch time  
Below VBATREG  
100  
120  
32  
150  
mV  
ms  
tDGL(RCH)  
VBAT falling below VRCH, tFALL=100ns  
Battery detection voltage  
threshold  
VDET(SRC1)  
During current source (Turn IBATSHRT off  
)
VRCH  
V
(TE = 1)  
VRCH  
– 200mV  
VDET(SRC2)  
VDET(SNK)  
During current source (Turn IBATSHRT on  
During current sink  
)
V
V
VBATSHRT  
Battery detection current  
before charge done (sink  
current)  
IDETECT  
Termination enabled (TE = 1)  
7
mA  
Battery detection time  
(sourcing current)  
tDETECT(SRC)  
tDETECT(SNK)  
Termination enabled (TE = 1)  
Termination enabled (TE = 1)  
2
s
Battery detection time  
(sinking current)  
250  
ms  
INPUT CURRENT LIMITING  
IINLIM=USB100  
IINLIM=USB500  
IINLIM=USB150  
IINLIM=USB900  
IINLIM=1.5A  
90  
450  
125  
800  
1425  
95  
475  
140  
850  
1500  
100  
500  
150  
900  
1575  
Input current limiting  
threshold  
USB charge mode, VIN = 5V, Current pulled  
from SW  
IINLIM=2A, YFF  
Package  
IINLIM  
mA  
1850  
1850  
2300  
2225  
2000  
2000  
2500  
2500  
2150  
2200  
2700  
2825  
IINLIM=2A, RGE  
Package  
IINLIM=2.5A, YFF  
Package  
IINLIM=2.5A, RGE  
Package  
Input based DPM threshold  
range  
Charge mode, programmable via I2C  
VIN_DPM  
4.2  
11.6  
3%  
V
VIN_DPM threshold Accuracy  
–3%  
VDRV BIAS REGULATOR  
Internal bias regulator  
voltage  
VDRV  
VIN>5V  
4.3  
0
4.8  
5.3  
10  
V
IDRV  
DRV Output Current  
DRV Dropout Voltage  
mA  
mV  
VDO_DRV  
IIN = 1A, VIN = 4.2V, IDRV = 10mA  
450  
(VIN – VDRV  
)
STATUS OUTPUT (STAT, INT)  
Low-level output saturation  
VOL  
IO = 10 mA, sink current  
V STAT = VINT = 5V  
0.4  
1
V
voltage  
IIH  
High-level leakage current  
µA  
INPUT PINS (CD, PSEL)  
VIL  
Input low threshold  
0.4  
V
V
VIH  
Input high threshold  
1.4  
RPULLDOWN  
CD pull-down resistance  
CD Only  
100  
kΩ  
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Product Folder Links: bq24260 bq24261 bq24262A  
 
 
bq24260  
bq24261  
bq24262A  
SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
www.ti.com  
ELECTRICAL CHARACTERISTICS (continued)  
Circuit of Figure 1, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Deglitch for CD and PSEL  
CD or PSEL rising/falling  
100  
µs  
PROTECTION  
VUVLO  
IC active threshold voltage  
IC active hysteresis  
VIN rising  
3.2  
3.3  
3.4  
V
VUVLO_HYS  
VIN falling from above VUVLO  
300  
mV  
Battery Undervoltage  
Lockout threshold  
VBATUVLO  
VSLP  
VBAT falling, 100mV Hysteresis  
2.4  
40  
2.6  
V
Sleep-mode entry threshold,  
VIN-VBAT  
2.0 V < VBAT < VBATREG, VIN falling  
0
120  
mV  
Deglitch time, BAT above  
VBATUVLO before SYS starts  
to rise  
tDGL(BAT)  
1.2  
ms  
VSLP_HYS  
tDGL(VSLP)  
Sleep-mode exit hysteresis  
VIN rising above VSLP  
40  
100  
30  
190  
mV  
ms  
Deglitch time for supply  
rising above VSLP+VSLP_HYS  
Rising voltage, 2-mV over drive, tRISE=100ns  
bq24260  
bq24261  
bq24262  
10.1  
13.6  
6.25  
10.5  
14  
10.9  
14.4  
6.75  
Input supply OVP threshold  
voltage  
VOVP  
IN rising, 100mV hysteresis  
V
6.5  
Good Battery Monitor  
Threshold (BQ24260/1 only)  
VBATGD  
VIN Rising  
3.51  
3.7  
30  
3.89  
V
ms  
V
tDGL(BUCK_OV Deglitch time, VIN OVP in  
IN falling below VOVP  
Buck Mode  
P)  
1.03 ×  
VBATREG  
1.05 ×  
VBATREG  
1.07 ×  
VBATREG  
Battery OVP threshold  
voltage  
VBOVP  
VBAT threshold over VOREG to turn off charger during charge  
Lower limit for VBAT falling from above VBOVP  
% of  
VBATREG  
VBOVP_HYS  
VBOVP hysteresis  
1
tDGL(BOVP)  
ICbCLIMIT  
TSHTDWN  
BOVP Deglitch  
Battery entering/exiting BOVP  
VSYS shorted  
8
ms  
A
Cycle-by-cycle current limit  
Thermal trip  
4.1  
4.5  
150  
10  
4.9  
°C  
Thermal hysteresis  
TREG  
Thermal regulation threshold Input current begins to cut off  
Safety Timer Accuracy  
125  
°C  
–20%  
20%  
PWM  
YFF Package: Measured from IN to SW  
75  
80  
75  
80  
1.5  
95  
120  
135  
115  
135  
1.65  
mΩ  
mΩ  
mΩ  
mΩ  
MHz  
Internal top MOSFET on-  
resistance  
RDSON_Q1  
RGE Package: Measured from IN to SW  
YFF Package: Measured from SW to PGND  
RGE Package: Measured from SW to PGND  
Internal bottom N-channel  
MOSFET on-resistance  
RDSON_Q2  
fOSC  
Oscillator frequency  
Maximum duty cycle  
Minimum duty cycle  
1.35  
0
DMAX  
DMIN  
%
BATTERY-PACK NTC MONITOR (1)  
VHOT  
High temperature threshold  
VTS falling, 2% VDRV Hysteresis  
27.3  
36.0  
54.7  
58.2  
80  
30  
38.3  
56.4  
60  
32.6  
41.2  
58.1  
61.8  
85  
%VDRV  
%VDRV  
%VDRV  
%VDRV  
%VDRV  
ms  
VWARM  
VCOOL  
VCOLD  
TSOFF  
tDGL(TS)  
Warm temperature threshold VTS falling, 2% VDRV Hysteresis  
Cool temperature threshold  
Low temperature threshold  
TS Disable threshold  
VTS rising, 2% VDRV Hysteresis  
VTS rising, 2% VDRV Hysteresis  
VTS rising, 4% VDRV Hysteresis  
Deglitch time on TS change Applies to VHOT, VWARM, VCOOL and VCOLD  
50  
I2C COMPATIBLE INTERFACE  
VIH  
Input low threshold level  
VPULL-UP=1.8V, SDA and SCL  
VPULL-UP=1.8V, SDA and SCL  
IL=5mA, sink current  
1.3  
V
V
VIL  
Input low threshold level  
Output low threshold level  
High-Level leakage current  
0.4  
0.4  
1
VOL  
V
IBIAS  
VPULL-UP=1.8V, SDA and SCL  
μA  
s
tWATCHDOG  
30  
50  
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SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
ELECTRICAL CHARACTERISTICS (continued)  
Circuit of Figure 1, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
tI2CRESET  
OTG BOOST SUPPLY  
700  
ms  
Quiescent current during  
boost mode (BAT pin)  
IQBAT_ BOOST  
3.3V<VBAT<4.5V, no switching  
100  
4.5  
5.2  
µA  
V
Battery voltage range for  
specified boost operation  
VBAT falling  
3.3  
Boost output voltage (to pin  
VBUS)  
VIN_BOOST  
3.3V<VBAT<4.5V over line and load  
4.95  
5.05  
V
BOOST_ILIM = 1  
BOOST_ILIM = 0  
BOOST_ILIM = 1  
1000  
500  
Maximum output current for  
boost  
IBO  
3.3V<VBAT<4.5V  
mA  
A
Cycle by cycle current limit  
for boost (measured at low-  
side FET)  
4
2
IBLIMIT  
3.3V<VBAT<4.5V  
BOOST_ILIM = 0  
Over voltage protection  
threshold for boost (IN pin)  
VBOOSTOVP  
Signals fault and exits boost mode  
5.8  
6
6.2  
V
tDGL(BOOST_O Deglitch Time, VIN OVP in  
170  
µs  
Boost Mode  
VP)  
Upper VIN voltage threshold  
VBURST(ENT)  
to enter burst mode (stop  
switching)  
5.1  
4.9  
5.2  
5
5.3  
5.1  
V
V
Lower VBUS voltage  
VBURST(EXIT) threshold to exit burst mode  
(start switching)  
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Block Diagrams  
PMID  
ꢀ.8V  
Reference  
DRV  
IN  
ICbCLimit  
BOOT  
IINLIM  
Q1  
DC-DC CONVERTER PWM LOGIC,  
COMPENSATION AND BATTERY  
FET CONTROL  
VINDPM  
VSYS(REG)  
IBAT(REG)  
VBAT(REG)  
SW  
DIE Temp  
Regulation  
Qꢁ  
PGND  
VSUPPLY  
References  
SYS  
OVP  
Comparator  
Termination  
Reference  
VIN  
+
Q3  
VINOVP  
+
IBAT  
Termination  
Comparator  
Sleep  
Comparator  
BAT  
VIN  
+
Recharge Comparator  
+
VBAT+VSLP  
Start Recharge  
Cycle  
VBATREG 0.1ꢁV  
VBAT  
Hi-Impedance Mode  
BGATE  
VSYSREG Comparator  
Hi-Z  
Mode  
+
VSYS  
Enable Linear  
Charge  
CD  
VMINSYS  
+
Enable HiZ in  
DEFAULT mode  
SDA  
SCL  
VBATGD  
IꢁC  
Interface  
VBATSC Comparator  
+
Enable  
IBATSHRT  
VBAT  
VBATSHRT  
Supplement COMPARATOR  
+
VSYS  
VBSUP  
VBAT  
bqꢁꢀꢁ60  
D+  
VDRV  
VBOVP Comparator  
USB  
Adapter  
Detection  
Circuitry  
+
VBAT  
1.5A /  
USB100  
VBATOVP  
D-  
+
DISABLE  
bqꢁꢀꢁ61/ꢁ  
PSEL  
TS COLD  
+
+
1C/  
0.5C  
TS COOL  
VBATREG  
0.1ꢀV  
STAT  
INT  
TS WARM  
TS HOT  
+
DISABLE  
TS  
CHARGE  
CONTROLLER  
w/ Timers  
Figure 1. Block Diagram in Charging Mode  
8
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SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
PMID  
4.8-V  
DRV  
Reference  
IN  
BOOT  
V
Amp  
BOOST  
+
Q1  
V
IN_BOOST  
DC-DC  
CONVERTER  
PWM LOGIC  
AND  
Low Side Current  
Limit Comparator  
+
+
SW  
V
V
BURST_ENT  
Burst Mode Enter  
Comparator  
I
COMPENSATION  
BLIMITI  
V
DRV  
+
Q2  
BURST_EXT  
Burst Mode Exit  
Comparator  
PGND  
Boost Short Circuit  
Comparator  
+
V
BOOSTSHRT  
+
V
BOOSTOVP  
V
BOOST  
OVP Comparator  
SYS  
Battery SC Comparator  
V
BIAS  
V
Q3  
+
BAT  
Battery Short  
Circuit  
I
LIM(DISCH)  
BAT  
CD  
Hi-Z  
Mode  
SDA  
SCL  
2
I C  
interface  
BGATE  
Digital Control  
STAT  
INT  
TS  
Figure 2. Block Diagram in Boost Mode  
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PIN CONFIGURATION  
36-Ball 2.4mm x 2.4mm WCSP  
bq24260 (Top View)  
bq24261/2 (Top View)  
1
2
3
4
5
6
1
2
3
4
5
6
PGND  
PMID  
IN  
PGND  
PGND  
PGND  
PGND  
PGND  
PGND  
PGND  
PGND  
PGND  
PGND  
PGND  
A
B
C
D
E
F
A
B
C
D
E
F
SW  
IN  
SW  
IN  
SW  
IN  
SW  
CD  
SW  
PMID  
SW  
IN  
SW  
IN  
SW  
IN  
SW  
CD  
SW  
BOOT  
DRV  
SYS  
BOOT  
IN  
SDA  
STAT  
SCL  
INT  
D–  
D+  
TS  
SDA  
SCL  
INT  
N.C.  
SYS  
PSEL  
SYS  
TS  
DRV  
SYS  
SYS  
SYS  
SYS  
STAT  
SYS  
AGND  
BGATE  
BAT  
BAT  
BAT  
BAT  
AGND  
BGATE  
BAT  
BAT  
BAT  
BAT  
24-Pin 4mm × 4mm QFN  
(Top View)  
PMID  
1
18 IN  
PMID  
1
18 IN  
BOOT  
DRV  
2
3
17 SDA  
16 SCL  
BOOT  
DRV  
2
3
17 SDA  
16 SCL  
bq24260  
bq24261  
bq24262  
CD  
TS  
4
5
15 D–  
14 D+  
CD  
TS  
4
5
15 N.C.  
14 PSEL  
SYS  
6
13 STAT  
SYS  
6
13 STAT  
10  
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SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
Pin Configurations  
PIN NUMBER  
bq24261/2  
PIN NUMBER  
bq24260  
PIN  
NAME  
I/O  
DESCRIPTION  
YFF  
RGE  
YFF  
RGE  
AGND  
BAT  
F1  
12, 20  
F1  
12, 20  
Analog Ground. Connect to the thermal pad (for QFN only) and the ground plane of the circuit.  
Battery Connection. Connect to the positive terminal of the battery. Bypass BAT to GND with at  
least 1μF of ceramic capacitance. See Applicaton section for additional details.  
F3-F6  
8, 9  
F3-F6  
8, 9  
I/O  
O
BGATE  
External Discharge MOSFET Gate Connection. BGATE drives an external P-Channel MOSFET  
to provide a very low resistance discharge path. Connect BGATE to the gate of the external  
MOSFET. BGATE is low during high impedance mode or when no input is connected. If no  
external FET is required, leave BGATE disconnected. Do not connect BGATE to GND.  
F2  
11  
F2  
11  
BOOT  
CD  
High Side MOSFET Gate Driver Supply. Connect 0.033µF of ceramic capacitance (voltage  
rating > 10V) from BOOT to SW to supply the gate drive for the high side MOSFET.  
C6  
C5  
2
4
C6  
C5  
2
4
I
I
IC Hardware Disable Input. Drive CD high to place the bq24260 in high-z mode. Drive CD low  
for normal operation. CD is pulled low internally with 100kΩ  
D+  
D–  
D4  
D3  
14  
15  
I
I
D+ and D– Connections for USB Input Adapter Detection. When a source is initially connected  
to the input during DEFAULT mode, and a short is detected between D+ and D–, the input  
current limit is set to 1.5A. If a short is not detected, the USB100 mode is selected.  
DRV  
Gate Drive Supply. DRV is the bias supply for the gate drive of the internal MOSFETs. Bypass  
DRV to PGND with at least 1μF of ceramic capacitance. DRV may be used to drive external  
D6  
3
D6  
3
O
I
loads up to 10mA. DRV is active whenever the input is connected and VIN > VUVLO and VIN  
(VBAT + VSLP).  
>
IN  
DC Input Power Supply. IN is connected to the external DC supply (AC adapter or USB port).  
Bypass IN to PGND with at least a 4.7μF of ceramic capacitance.  
C1-C4  
19  
C1-C4  
19  
INT  
Status Output. INT is an open-drain output that signals charging status and fault interrupts. INT  
pulls low during charging. INT is high impedance when charging is complete, disabled or the  
charger is in high impedance mode. When a fault occurs, a 128μs pulse is sent out as an  
interrupt for the host. INT is enabled /disabled using the EN_STAT bit in the control register.  
Connect INT to a logic rail through a 100kΩ resistor to communicate with the host processor.  
E2  
10  
E2  
10  
O
PGND  
PMID  
A1-A6  
B1  
21,22  
1
A1-A6  
B1  
21,22  
1
I
Ground terminal. Connect to the thermal pad (for QFN only) and the ground plane of the circuit.  
High Side Bypass Connection. Connect at least 1µF of ceramic capacitance from PMID to  
PGND as close to the PMID and PGND pins as possible.  
PSEL  
Hardware Input Current Limit. In DEFAULT mode, PSEL selects the input current limit. Drive  
PSEL high to select USB100 (bq24261) or USB500 (bq24262A) mode, drive PSEL low to  
select 1.5A mode.  
D4  
14  
I
I2C Interface Clock. Connect SCL to the logic rail through a 10kΩ resistor.  
I2C Interface Data. Connect SDA to the logic rail through a 10kΩ resistor.  
SCL  
D2  
D1  
16  
17  
D2  
D1  
16  
17  
I
SDA  
STAT  
I/O  
Status Output. STAT is an open-drain output that signals charging status and fault interrupts.  
STAT pulls low during charging. STAT is high impedance when charging is complete, disabled  
or the charger is high impedance mode. When a fault occurs, a 128μs pulse is sent out as an  
interrupt for the host. STAT is enabled /disabled using the EN_STAT bit in the control register.  
Connect STAT to a logic rail using an LED for visual indication or through a 100kΩ resistor to  
communicate with the host processor.  
E1  
13  
E1  
13  
O
SW  
Inductor Connection. Connect to the switched side of the external inductor. The inductance  
must be between 1.5µH and 2.2µH.  
B2-B6  
E3-E6  
23, 24  
6, 7  
B2-B6  
E3-E6  
23, 24  
6, 7  
O
I
SYS  
System Voltage Sense and Charger FET Connection. Connect SYS to the system output at the  
output bulk capacitors. Bypass SYS locally with at least 10μF of ceramic capacitance. The SYS  
rail must have at least 20µF of total capacitance for stable operation. See Application section  
for additional details.  
TS  
Battery Pack NTC Monitor. Connect TS to the center tap of a resistor divider from DRV to GND.  
The NTC is connected from TS to GND. The TS function provides 4 thresholds for JEITA  
compatibility. TS faults are reported by the I2C interface. Pull TS high to VDRV to disable the TS  
function if unused. See the NTC Monitor section for more details on operation and selecting the  
resistor values.  
D5  
5
D5  
5
I
Thermal  
PAD  
There is an internal electrical connection between the exposed thermal pad and the PGND pin  
of the device. The thermal pad must be connected to the same potential as the PGND pin on  
the printed circuit board. Do not use the thermal pad as the primary ground input for the device.  
PGND pin must be connected to ground at all times.  
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Typical Application Circuit  
Typical Application Circuit 1 – bq24261, No External Discharge FET  
1 .5 uH  
PMID  
SW  
47 uF  
1 uF  
System  
Load  
0 .033 uF  
BOOT  
SYS  
VBUS  
IN  
D +  
D -  
10 uF  
GND  
4 .7 uF  
BGATE  
DRV  
BAT  
VDRV  
1 uF  
1 uF  
PGND  
PACK  
+
STAT  
TEMP  
TS  
V I/O  
(1 .8 V )  
PSEL  
USB PHY  
PACK–  
HOST  
bq 24261  
INT  
SDA  
SCL  
GPIO 1  
SDA  
SCL  
CD  
Typical Application Circuit 2 – bq24260, External Discharge FET  
1 .5 uH  
PMID  
SW  
1 uF  
47 uF  
System  
Load  
0 .033 uF  
BOOT  
SYS  
10 uF  
IN  
VBUS  
D +  
D -  
PGND  
GND  
4 .7 uF  
BGATE  
DRV  
BAT  
VDRV  
1 uF  
1 uF  
PACK  
+
STAT  
TEMP  
TS  
V SYS  
(1 .8 V )  
D +  
D -  
PACK  
-
HOST  
bq 24260  
INT  
SDA  
SCL  
GPIO 1  
SDA  
SCL  
CD  
12  
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SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
Typical Characteristics  
Figure 3. Startup With No Battery  
Figure 4. Battery Detection  
Figure 5. Battery Removal  
Figure 6. Default Start-up - bq24260  
(D+/D– shorted)  
Figure 7. Default Start-up - bq24260  
(D+/D– not shorted)  
Figure 8. VSYS Transient Without Supplement Mode  
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Typical Characteristics (continued)  
Figure 9. VSYS Transient With Supplement Mode  
Figure 10. VSYS Transient With Supplement Mode  
Figure 11. Boost Startup No Load  
Figure 12. Boost Burst Mode During Light Load  
Figure 13. Boost Startup 1A Load  
Figure 14. Boost Transient Response  
14  
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SLUSBU4A DECEMBER 2013REVISED JANUARY 2014  
Typical Characteristics (continued)  
Figure 15. Input OVP Event with INT  
Figure 16. Startup, 4.2V  
10  
8
95  
90  
85  
VIN=5V  
ICHG=1.2A  
6
4
2
0
-2  
-4  
-6  
-8  
80  
75  
70  
VIN=5V  
VIN=7V  
VIN=10V  
VIN=12V  
TA=25ºC  
TA=0ºC  
TA=85ºC  
TA=60ºC  
-10  
2.9  
3.1  
3.3  
3.5  
3.7  
3.9  
4.1  
4.3  
4.5  
0
0.5  
1
1.5  
2
2.5  
3
VBAT (V)  
Load Current (A)  
Figure 17. Charge Current vs Battery Voltage  
Figure 18. Efficiency vs Output Current  
100  
90  
80  
70  
60  
50  
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
ICHG=2A  
VIN=5V  
VREG=4.44V  
TA=25ºC  
TA=25ºC  
TA=60ºC  
TA=0ºC  
40  
2
2.5  
3
3.5  
4
4.5  
0
0.5  
1
1.5  
2
VBAT (V)  
IBAT (A)  
Figure 19. Efficiency vs Battery Voltage  
Figure 20. VBAT Accuracy vs IBAT – 4.2V Setting  
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Typical Characteristics (continued)  
16  
14  
12  
700  
600  
500  
400  
300  
200  
100  
0
10  
8
6
Input Current (μA)  
4
2
TA=25°C  
0
-100  
3
5
7
9
11  
13  
15  
-2  
0
2
4
6
8
10  
Input Voltage - V  
Figure 21. Input IQ - No Battery, No System  
12  
14  
16  
Input Voltage (V)  
Figure 22. Input IQ with Hi-Z Enabled  
Detailed Description  
High Impedance Mode  
High Impedance mode (Hi-Z mode) is the low quiescent current state for the bq2426x. During Hi-Z mode, the  
buck converter is off, and the battery FET and BGATE are on. SYS is powered by BAT. The bq2426x is in  
Hi-Z mode when VIN < VUVLO, the HZ_MODE bit in the I2C is '1' or the CD pin is driven high. Hi-Z mode  
resets the safety timer.  
The bq2426x contains a CD input that is used to disable the IC and place the bq2426x into high-impedance  
mode. Drive CD low to enable the bq2426x and enter normal operation. Drive CD high to disable charge  
and place the bq2426x into high-impedance mode. CD is internally pulled down to PGND with a 100kΩ  
resistor. When exiting Hi-Z mode, charging resumes in approximately 110ms.  
Battery Only Connected  
When the battery is connected with no input source, the battery FET is turned on. After the battery rises  
above VBATUVLO and the deglitch time, tDGL(BAT), the SYS output starts to rise. In this mode, the current is not  
regulated; however, there is a short circuit current limit. If the short circuit limit (ILIM(DISCHG)) is reached for the  
deglitch time (tDGL(SC)), the battery FET is turned off for the recovery time (tREC(SC)). After the recovery time,  
the battery FET is turned on to test and see if the short has been removed. If it has not, the FET turns off  
and the process repeats until the short is removed. This process protects the internal FET from over  
current. If an external FET is used for discharge, the body diode prevents the load on SYS from being  
disconnected from the battery and tDGL(BAT) is not applicable.  
Input Connected  
Input Voltage Protection in Charge Mode  
Sleep Mode  
The bq2426x enters the low-power sleep mode if the voltage on VIN falls below sleep-mode entry  
threshold, VBAT+VSLP, and VIN is higher than the undervoltage lockout threshold, VUVLO. In sleep mode,  
the input is isolated from the battery. This feature prevents draining the battery during the absence of  
VIN. When VIN < VBAT+ VSLP, the bq2426x turns off the PWM converter, turns the battery FET and  
BGATE on, sends a single 128μs pulse on the STAT and INT outputs and the STATx and FAULT_x bits  
of the status registers are updated in the I2C. Once VIN > VBAT+ VSLP, the STATx bits are cleared and the  
device initiates a new charge cycle. The FAULT_x bits are not cleared until they are read in the I2C and  
the sleep condition no longer exists.  
Input Voltage Based Dynamic Power Management (VIN-DPM)  
16  
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During normal charging process, if the input power source is not able to support the programmed or  
default charging current, the supply voltage deceases. Once the supply drops to VIN_DPM (default 4.2V),  
the charge current limit is reduced to prevent the further drop of the supply. When the IC enters this  
mode, the charge current is lower than the set value and the DPM_STATUS bit is set. This feature  
ensures IC compatibility with adapters with different current capabilities without a hardware change.  
Figure 23 shows the VIN-DPM behavior to a current limited source. In this figure the input source has a  
2A current limit and the device is charging at 1A. A 2.5A load transient then occurs on VSYS causing the  
adapter to hit its current limit and collapse, while VSYS goes from VSYSREG(LO) to VMINSYS. If the 2X timer is  
set, the safety timer is extended while VIN-DPM is active. Additionally, termination is disabled.  
Input voltage regulated to VIN_DPM  
VIN  
1V/div  
(5V Offset)  
Input current limit reduced to avoid crashing adapter  
2A/div  
IIN  
500mV/div  
VSYS  
(3.6V Offset)  
SYS enters supplement mode to ensure SYS load is supported  
Normal Charging (1A)  
2A/div  
SYS load removed,  
normal charging  
resumes  
IBAT  
2A/div  
ISYS  
800us/div  
Figure 23. bq24260 VIN-DPM  
Input Over-Voltage Protection  
The built-in input over-voltage protection protects the bq2426x and downstream components connected  
to SYS and/or BAT against damage from overvoltage on the input supply (Voltage from VIN to PGND).  
When VIN > VOVP, the bq2426x turns off the PWM converter immediately. After the deglitch time  
tDGL(BUCK_OVP), an OVP fault is determined to exist. During the OVP fault, the bq2426x turns the battery  
FET and BGATE on, sends a single 128μs pulse is sent on the STAT and INT outputs and the STATx  
and FAULT_x bits are updated in the I2C. Once the OVP fault is removed, the STATx bits are cleared  
and the device returns to normal operation. The FAULT_x bits are not cleared until they are read in the  
I2C after the OVP condition no longer exists.  
The OVP threshold for the bq24260 is 10.5V for operation from standard adapters while the bq24261 is  
set to 14V to enable operation from 12V sources. The bq24262A OVP is set to 6.5V to operate from  
standard USB sources.  
Charge Profile  
When a valid input source is connected (VIN>VUVLO and VBAT+VSLP<VIN<VOVP), the CE bit in the control register  
determines whether a charge cycle is initiated. By default, the bq24260 and bq24262A enable the charge cycle  
when a valid input source is connected while the bq24261 does not (CE=1 by default). When the CE bit is 1 and  
a valid input source is connected, the battery FET is turned off and the SYS output is regulated to  
VSYSREG(HI). A charge cycle is initiated when the CE bit is written to a 0.  
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The bq2426x supports a precision Li-Ion or Li-Polymer charging system for single-cell applications. Charging is  
done through the internal battery MOSFET. There are 6 loops that influence the charge current; constant current  
loop (CC), constant voltage loop (CV), thermal regulation loop, minimum system voltage loop (MINSYS), input  
current limit and VIN-DPM. During the charging process, all six loops are enabled and the one that is dominant  
takes control. The minimum system output feature regulates the system voltage to VSYSREG(LO), so that startup is  
enabled even for a missing or deeply discharged battery. Figure 24 shows a typical charge profile including the  
minimum system output voltage feature.  
Voltage Regulation  
Phase  
Precharge  
Phase  
Current Regulation  
Phase  
Regulation  
Voltage  
Regulation  
Current  
System Voltage  
VSYS  
(3.6V)  
VBATSHORT  
(2.0V)  
Battery  
Voltage  
Charge Current  
Termination  
IBATSHORT  
Linear Charge  
50mA Linear Charge  
to Close Pack  
Protector  
to Maintain  
Minimum  
System  
Battery  
FET  
is OFF  
Battery FET (Q3) is  
ON  
Voltage  
Figure 24. Typical Charging Profile of bq2426x with Termination Enabled  
Battery Charging Process  
When the battery is deeply discharged or shorted, the bq2426x applies a IBATSHRT current to close the battery  
protector switch and bring the battery voltage up to acceptable charging levels. During this time, the battery FET  
is off and the system output is regulated to VSYSREG(LO). Once the battery rises above VBATSHRT, the charge  
current is regulated to the value set in the I2C register. The battery FET is linearly regulated to maintain the  
system voltage at VSYSREG(LO). Under normal conditions, the time spent in this region is a very short percentage  
of the total charging time, so the linear regulation of the charge current does not affect the overall charging  
efficiency for very long. If the die temperature does heat up, the thermal regulation loop reduces the input current  
to maintain a die temperature at 125°C. If the current limit for the SYS output is reached (limited by the input  
current limit, VIN-DPM, or 100% duty cycle), the SYS output drops to the VMINSYS output voltage. When this  
happens, the charge current is reduced to ensure the system is supplied with all the current that is needed while  
maintaining the minimum system voltage. If the charge current is reduced to 0mA, pulling further current from  
SYS causes the output to fall to the battery voltage and enter supplement mode (see the “Dynamic Power Path  
Management” section for more details).  
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Once the battery is charged enough that the system voltage rises above VSYSREG(LO) (approximately 3.5V), the  
battery FET is turned on fully and the battery is charged with the full programmed charge current set by the I2C  
interface, ICHARGE. The charge current is regulated to ICHARGE until the voltage between BAT and PGND reaches  
the regulation voltage. The voltage between BAT and PGND is regulated to VBATREG (CV mode) while the charge  
current naturally tapers down as shown in Figure 24. During CV mode, the SYS output remains connected to the  
battery. The impedance of the battery FET is increased to 4x of the fully on value when IBAT falls below ~350mA  
to provide increased accuracy during termination. This will show a small rise in the SYS voltage when the RDSON  
increases below ~350mA.  
When termination is enabled (TE bit is '1'), the bq2426x monitors the charging current during the CV mode. Once  
the charge current tapers down to the termination threshold, ITERM, and the battery voltage is above the recharge  
threshold, the bq2426x terminates charge, turns off the battery charging FET and enters battery detection (see  
Battery Detection section for more details). The system output is regulated to the VSYSREG(HI) and supports the full  
current available from the input. The battery supplement mode is available to supply any SYS load that cannot  
be supported by the input source (see the “Dynamic Power Path Management” section for more details). The  
termination current level is programmable. To disable the charge current termination, the host sets the charge  
termination bit (TE) of charge control register to 0. Refer to I2C section for details. When termination is disabled,  
VBAT is continuously regulated to VBATREG. Termination is also disabled when any loop is active other than CC or  
CV. This includes VINDPM, input current limit, or thermal regulation. Termination is also disabled during TS  
warm/cool conditions and when the LOW_CHG bit is set to '1'.  
A charge cycle is initiated when one of the following conditions is detected:  
1. The battery voltage falls below the VBATREG-VRCH threshold.  
2. IN Power-on reset (POR)  
3. CE bit toggle or RESET bit is set (Host controlled)  
4. CD pin is toggled  
Charge Time Optimizer  
The CC to CV transition is enhanced in the bq2426x architecture. The "knee" between CC and CV is very sharp.  
This enables the charger to remain in CC mode as long as possible before beginning to taper the charge current  
(CV mode). This provides a decrease in charge time as compared to older topologies.  
Battery Detection  
When termination conditions are met, a battery detection cycle is started. During battery detection, IDETECT is  
pulled from VBAT for tDETECT(SNK) to verify there is a battery. If the battery voltage remains above VDETECT for the  
full duration of tDETECT(SNK), a battery is determined to present and the IC enters “Charge Done”. If VBAT falls  
below VDETECT, a “Battery Not Present” fault is signaled, the charge parameters are reset (VBATREG, ICHARGE and  
ITERM) and battery detection continues. The next cycle of battery detection, the bq2426x turns on IBATSHRT for  
tDETECT(SRC). If VBAT rises to VDET(SRC1), the current source is turned off and a “No Battery” condition is registered.  
In order to keep VBAT high enough to close the battery protector, the current source turns on if VBAT falls to  
VDET(SRC2). The source cycle continues for tDETECT(SRC). After tDETECT(SRC), the battery detection continues through  
another current sink cycle. Battery detection continues until charge is disabled, the bq2426x enters high-z mode  
or a battery is detected. Once a battery is detected, the fault status clears and a new charge cycle begins. With  
no battery connected, the BAT output will transition from VRCH to PGND with a high period of tDETECT(SRC) and a  
low period of tDETECT(SNK). See Figure 4 in the Typical Operating Characteristics. Battery detection is not  
performed when termination is disabled.  
Battery Overvoltage Protection (BOVP)  
If the battery is ever above the battery OVP threshold (VBOVP), the battery OVP circuit shuts the PWM converter  
off and the battery FET is turned on to discharge the battery to safe operating levels. A battery OVP most  
commonly occurs when the bq2426x returns to DEFAULT mode after a watchdog timer expiration or RESET bit  
written to '1'. In this condition, the VBATREG is reset and may be below the battery voltage. Other conditions may  
be when the input is initially plugged in before I2C communication is established or TS WARM conditions or when  
writing the VBATREG to less than the battery voltage. The battery OVP condition is cleared when the battery  
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voltage falls below the hysteresis of VBOVP either by the battery discharging or writing the VBATREG to a higher  
value. When a battery OVP event exists for tDGL(BOVP), the bq2426x turns the battery FET and BGATE on, sends  
a single 128μs pulse on the STAT / INT outputs and the STATx and FAULT_x bits are updated in the I2C. Once  
the BOVP fault is removed, the STATx bits are cleared and the device returns to normal operation. The  
FAULT_x bits are not cleared until they are read in the I2C after the BOVP condition no longer exists.  
Dynamic Power Path Management  
The bq2426x features a SYS output that powers the external system load connected to the battery. This output is  
active whenever a valid source is connected to IN or BAT. When VSYS > VSYSREG(LO), the SYS output is  
connected to VBAT. If the battery voltage falls to VMINSYS, VSYS is regulated to the VSYSREG(LO) threshold to  
maintain the system output even with a deeply discharged or absent battery. In this mode, the SYS output  
voltage is regulated by the buck converter and the battery FET is linearly regulated to regulate the charge current  
into the battery. The current from the supply is shared between charging the battery and powering the system  
load at SYS. The dynamic power path management (DPPM) circuitry of the bq2426x monitors the current limits  
continuously and if the SYS voltage falls to the VMINSYS threshold, it adjusts charge current to maintain the  
minimum system voltage and supply the load on SYS. If the charge current is reduced to zero and the load  
increases further, the bq2426x enters battery supplement mode. During supplement mode, the battery FET is  
turned on and VBAT = VSYS while the battery supplements the system load.  
2000mA  
1800mA  
ISYS  
800mA  
0mA  
1500mA  
IIN  
~850mA  
0mA  
1A  
0mA  
IBAT  
–200mA  
3.6V  
3.5V  
DPPM loop active  
VSYS  
~3.1V  
Supplement  
Mode  
Figure 25. Example DPPM Response (VSupply=5V, VBAT = 3.1V, 1.5A Input current limit)  
Battery Discharge FET (BGATE)  
The bq2426x contains a MOSFET driver to drive an external discharge FET between the battery and the system  
output. This external FET provides a low impedance path for supplying the system from the battery. Connect  
BGATE to the gate of the external discharge P-channel MOSFET. BGATE is on (low) under the following  
conditions:  
1. No input supply connected.  
2. HZ_MODE = 1  
3. CD pin = 1  
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DEFAULT Mode  
DEFAULT mode is used when I2C communication is not available. DEFAULT mode is entered in the following  
situations:  
1. When the charger is enabled and VBAT<VBATGD before I2C communication is established  
2. When the watchdog timer expires without a reset from the I2C interface  
3. The RESET bit is written in the I2C register  
In DEFAULT mode, the I2C registers are reset to the default values. The 2 minute safety timer is reset and starts  
when DEFAULT mode is entered if a charge cycle is underway. The default value for VBATREG is 3.6V for the  
BQ24260/1 and 4.2V for the bq24262A. The default value for ICHARGE is 1A. For the bq24260, the input current  
limit is determined by the D+/D– detection (See D+/D– Based Adapter Detection section). For the bq24261 and  
bq24262A, the input current limit in DEFAULT mode is set by PSEL. (See Power Source Selector Input section)  
DEFAULT mode is exited by writing to the I2C interface. Note that if termination is enabled and charging has  
terminated, a new charge cycle is NOT initiated when entering DEFAULT mode.  
Good Battery Monitor  
The bq2426x contains a good battery monitor circuit that places the bq2426x into high-z mode if the battery  
voltage is above the VBATGD threshold while in DEFAULT mode. This function is used to enable compliance to  
the battery charging standard that prevents charging from an un-enumerated USB host while the battery is above  
the good battery threshold. If the bq2426x is in HOST mode, it is assumed that USB host has been enumerated  
and the good battery circuit has no effect on charging. Any write to the i2c places the bq2426x in HOST mode  
and clears the high-impedance mode condition. The HZ_MODE bit is not updated during this condition.  
D+/D– Based Adapter Detection (D+/D–, bq24260 only)  
The bq24260 contains a D+/D- based adapter detection circuit that is used to program the input current limit for  
the input during DEFAULT mode. D+/D- is only performed in DEFAULT mode unless forced by the D+/D-_EN  
bit in host mode.  
By default the input current limit is set to 100mA. During DEFAULT mode, when the input source is connected,  
the bq24260 performs an adapter detection to determine if it is connected to a USB port or dedicated charger.  
The adapter detection starts with a connection detection as described in the USB Battery Charging Specification  
ver 1.2 (BC1.2). Once a connection is detected, the adapter detection is performed. If a connection is not  
detected within 500ms, the adapter detection begins. The adapter detection runs as described in BC1.2. If a  
CDP/DCP is detected, the input current limit is increased to 1.5A. If an SDP is detected, the current limit remains  
at 100mA, until changed in the I2C.  
D+/D- is initiated at any time by the host by setting the D+/D- EN bit in the I2C to 1. After detection is complete  
the D+/D- EN bit is automatically reset to 0 and the detection circuitry is disconnected from the D+ D- pins to  
avoid interference with USB data transfer. When a command is written to change the input current limit in the  
I2C, this overrides the current limit selected by D+/D- detection.  
Power Source Selector Input (PSEL, bq24261/2 only)  
The bq24261/2 contains a PSEL input that is used to program the input current limit during DEFAULT mode.  
Drive PSEL high to indicate a USB source is connected to the input and program the 100mA (bq24261) or  
500mA (bq24262A) current limit for IN. Drive PSEL low to indicate that an AC Adapter is connected to the input.  
When PSEL is low, the IC starts up with a 1.5A input current limit. Once an I2C write is done and the device is in  
HOST mode, the PSEL has no effect on the input current limit until the watchdog timer expires and returns the  
bq2426x to DEFAULT mode.  
Safety Timer and Watchdog Timer in Charge Mode (bq24260/1 only)  
At the beginning of charging process, the bq24260/1 starts the safety timer. This timer is active during the entire  
charging process. If charging has not terminated before the safety timer expires, the IC enters suspend mode  
where charging is disabled. When a safety timer fault occurs, a single 128μs pulse is sent on the STAT and INT  
outputs and the STATx and FAULT_x bits of the status registers are updated in the I2C. The CE bit, Hi-Z mode,  
or power must be toggled in order to clear the safety timer fault. The safety timer duration is selectable using the  
TMR_X bits in the Safety Timer Register/ NTC Monitor register. When the safety timer is active, changing the  
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safety timer duration resets the safety timer. The bq2426x also contains a 2X_TIMER bit that enables the 2x  
timer function to prevent premature safety timer expiration when the charge current is reduced by a load on SYS  
or a NTC condition. When 2X_TIMER is enabled, the timer runs at half speed when any loop is active other than  
CC or CV. This includes VINDPM, input current limit, or thermal regulation. The timer also runs at half speed during  
TS warm/cool conditions and when the LOW_CHG bit is set to '1'.  
In addition to the safety timer, the bq24260/1 contains a 30-second (tWATCHDOG) watchdog timer that monitors the  
host through the I2C interface. Once a write is performed on the I2C interface, a watchdog timer is started. The  
watchdog timer is reset by the host using the I2C interface. This is done by writing a “1” to the reset bit  
(TMR_RST) in the control register. The TMR_RST bit is automatically set to “0” when the watchdog timer is  
reset. This process must continue as long as the input is connected in order to maintain the register contents. If  
the watchdog timer expires, the IC enters DEFAULT mode where the default register values are loaded, the  
safety timer restarts at 2 minutes once charging continues. The I2C may be accessed again to reinitialize the  
desired values and restart the watchdog timer. The watchdog timer flow chart is shown in Figure 26.  
Start Safety Timer  
Yes  
Safety timer  
fault  
Safety timer expired?  
No  
Charging suspended  
Enter suspended  
mode  
Fault indicated in  
STAT registers  
STAT = Hi  
Update STAT  
bits  
Yes  
Charge Done?  
< I  
TERM  
I
CHG  
No  
I2C Write  
performed?  
No  
Yes  
Start watchdog timer  
Reset watchdog timer  
STAT = Hi  
Update STAT  
bits  
Yes  
Charge Done?  
< I  
I
CHG  
TERM  
No  
Yes  
Safety timer expired?  
No  
Safety timer  
fault  
Charging suspended  
Enter suspended  
mode  
Fault indicated in  
STAT registers  
No  
Yes  
Received  
software watchdog  
RESET?  
No  
WD timer expired?  
Yes  
Reset to default  
values in I2C  
register  
Restart 2 min  
safety timer  
Figure 26. The Watchdog Timer Flow Chart for bq24260  
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LDO Output (DRV)  
The bq24260 contains a linear regulator (DRV) that is used to supply the internal MOSFET drivers and other  
circuitry. Additionally, DRV supplies up to 10mA external loads to power the STAT LED or the USB transceiver  
circuitry. The maximum value of the DRV output is 5.3V so it ideal to protect voltage sensitive USB circuits. The  
LDO is on whenever a supply is connected to the input of the bq24260. The DRV is disabled under the following  
conditions:  
1. VSUPPLY < UVLO  
2. VSUPPLY < VBAT + VSLP  
3. Thermal Shutdown  
External NTC Monitoring (TS)  
The I2C interface allows the user to easily implement the JEITA standard for systems where the battery pack  
thermistor is monitored by the host. Additionally, the bq24260 provides a flexible, voltage based TS input for  
monitoring the battery pack NTC thermistor. The voltage at TS is monitored to determine that the battery is at a  
safe temperature during charging. The JEITA specification is shown in Figure 27.  
1.0 C  
Charging Current  
0.5 C  
Portion of spec not covered by TS  
Implementation on bq2426x  
4.25 V  
4.15 V  
VBAT  
4.1 V  
T1  
(0°C)  
T2  
(10°C)  
T3 T4  
(45°C) (50°C)  
T5  
(60°C)  
Cold  
Cool  
Warm  
Hot  
Figure 27. Charge Current During TS Conditions  
To satisfy the JEITA requirements, four temperature thresholds are monitored; the cold battery threshold (TNTC  
<
0°C), the cool battery threshold (0°C < TNTC < 10°C), the warm battery threshold (45°C < TNTC < 60°C) and the  
hot battery threshold (TNTC > 60°C). These temperatures correspond to the VCOLD, VCOOL, VWARM, and VHOT  
thresholds in the EC table. Charging is suspended and timers are suspended when VTS < VHOT or VTS > VCOLD  
.
When VCOOL < VTS < VCOLD, the charging current is reduced to half of the programmed charge current. When  
VHOT < VTS < VWARM, the battery regulation voltage is reduced by 140mV from the programmed regulation  
threshold. The TS function is disabled by connecting TS directly to DRV (VTS > VTSOFF).  
The TS function is voltage based for maximum flexibility. Connect a resistor divider from DRV to GND with TS  
connected to the center tap to set the threshold. The connections are shown in Figure 28. The resistor values are  
calculated using the following equations:  
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é
ù
ú
û
1
1
VDRV ´RCOLD´RHOT ´  
-
VCOLD VHOT  
ê
ë
RLO =  
é
ê
ë
ù
é
ù
V
VDRV  
VHOT  
DRV  
RHOT ´  
-1 - RCOLD´  
-1  
ú
ú
ê
VCOLD  
û
ë
û
(1)  
(2)  
VDRV  
-1  
VCOLD  
RHI =  
1
1
+
RLO RCOLD  
Where:  
VCOLD = 0.60 × VDRV  
VHOT = 0.30 × VDRV  
RLO´RHI´ 0.564  
RCOOL =  
RLO - RLO´0.564 -RHI´0.564  
RLO´RHI´ 0.383  
(3)  
(4)  
RWARM =  
RLO - RLO´ 0.383 -RHI´0.383  
Where RHOT is the NTC resistance at the hot temperature and RCOLD is the NTC resistance at cold  
temperature.  
The WARM and COOL thresholds are not independently programmable. The COOL and WARM NTC  
resistances for a selected resistor divider are calculated using Equation 3 and Equation 4.  
VBATREG  
1 x Charge/  
0.5 x Charge  
VDRV  
– 140 mV  
DISABLE  
TS COLD  
+
TS COOL  
TS WARM  
+
+
VDRV  
TS HOT  
RHI  
+
TS  
PACK+  
TEMP  
bq2426x  
RLO  
PACK–  
Figure 28. TS Circuit  
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Thermal Regulation and Protection  
During the charging process, to prevent overheating in the chip, bq2426x monitors the junction temperature, TJ,  
of the die and reduces the input current once TJ reaches the thermal regulation threshold, TREG. The input  
current is reduced to zero when the junction temperature increases about 10°C above TREG. Once the input  
current is reduced to 0, the system current is reduced while the battery supplements the load to supply the  
system. When the input current is completely reduced to 0 and TJ>125°C, this is may cause a thermal shutdown  
of the bq2426x if the die temperature rises too high. At any state, if TJ exceeds TSHTDWN, bq24260 stops charging  
and disables the buck converter. During thermal shutdown mode, PWM is turned off, all timers are suspended,  
and a single 128μs pulse is sent on the STAT and INT outputs and the STATx and FAULT_x bits of the status  
registers are updated in the I2C. The charge cycle resumes when TJ falls below TSHTDWN by approximately 10°C.  
Charge Status Outputs (STAT, INT)  
The STAT/INT output is used to indicate operation conditions for bq2426x. STAT/INT is pulled low during  
charging when EN_STAT bit in the control register is set to “1”. When charge is complete or disabled, STAT/INT  
is high impedance. When a fault occurs, a 128-µs pulse (interrupt) is sent out to notify the host. The status of  
STAT/INT during different operation conditions is summarized in Table 1. STAT/INT drives an LED for visual  
indication or can be connected to the logic rail for host communication. The EN_STAT bit in the control register is  
used to enable/disable the charge status for STAT/INT. The interrupt pulses are unaffected by EN_STAT and will  
always be shown.  
Table 1. STAT Pin Summary  
CHARGE STATE  
Charge in progress and EN_STAT=1  
STAT and INT BEHAVIOR  
Low  
Other normal conditions  
High-Impedance  
Charge mode faults: Timer faults, sleep mode, VIN over voltage, VIN < UVLO or Sleep  
mode, BOVP, thermal shutdown, No Battery and Battery Temperature faults  
128-µs pulse, then High Impedance  
Boost Mode Operation  
In HOST mode, when the operation mode bit (BOOST_EN) in the control register is set to 1, bq2426x operates  
in boost mode and delivers 5V to IN to supply USB OTG devices connected to the USB connector. Boost  
operation can start with VBAT between 3.45V to 4.5V, and will maintain boost output until VBAT falls to 3.3V. IN  
supplies up to 1A to power these devices. It is not recommended to operate boost mode when the battery  
voltage is less than 3.3V. Proper operation is not guaranteed.  
Chip Disable Input During Boost Mode (CD)  
The bq2426x contains a CD input that is used to disable the IC and place the bq2426x into high-impedance  
mode. CD must be low to enter boost mode. Driving CD high during boost mode places the bq2426x into high-z  
mode and resets the BOOST_EN bit in the I2C. When CD is high, the buck converter is off, and the battery FET  
and BGATE are turned on. CD is internally pulled down to GND with a 100kΩ resistor.  
PWM Controller in Boost Mode  
Similar to charge mode operation, in boost mode the IC switches at 1.5MHz to regulate the voltage at IN to 5V.  
The voltage control loop is internally compensated to provide enough phase margin for stable operation with the  
full battery voltage range and up to 1A.  
In boost mode, the cycle-by-cycle current limit is set to 4A or 2A (depending on the I2C setting) to provide  
protection against short circuit conditions. If the cycle-by-cycle current limit is active for 8ms, an overload  
condition is detected and the device exits boost mode, and signals an over-current fault. Additionally, discharge  
current limit (ILIM(DISCHG)) is active to protect the battery from overload. Synchronous operation and burst mode  
are used to maximize efficiency over the full load range.  
The bq2426x will not enter boost mode unless the IN voltage is less than the UVLO. When the boost function is  
enabled, the bq2426x enters a linear mode to bring IN up to the battery voltage. Once VIN > (VBAT – 1V), the  
bq2426x begins switching and regulates IN up to 5V. If VIN does not rise to within 1V of VBAT within 8ms, an  
over-current event is detected and boost mode is exited and a boost mode over-current event is announced, the  
BOOST_EN bit is reset to ‘0’ and the STAT_x and FAULT_x bits in the Status/ Control register are updated.  
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Burst Mode during Light Load  
In boost mode, the IC operates using burst mode to improve light load efficiency and reduce power loss. During  
boost mode, the PWM converter is turned off when the device reaches minimum duty cycle and the output  
voltage rises to VBURST(ENT) threshold. This corresponds to approximately a 75mA inductor current. The converter  
then restarts when VIN falls to VBURST(EXT). See Figure TBD in the Typical Operating Characteristics for an  
example waveform.  
Watchdog Timer in Boost Mode  
During boost mode, the watchdog timer is active. The watchdog timer works the same as in charge mode. Write  
a “1” to the TMR_RST reset bit in the control register. If the watchdog timer expires, the IC resets the  
EN_BOOST bit to 0, signals the fault pulse on the STAT and INT pins. The FAULT_x bits read "Low Supply  
Fault" as this is a higher priority fault than the WD timer.  
STAT/ INT During Boost Mode  
During boost mode, the STAT and INT outputs are high impedance. Under fault conditions, a 128µs pulse is sent  
out to notify the host of the error condition.  
Protection in Boost Mode  
Output Over-Voltage Protection  
The bq2426x contains integrated over-voltage protection on the IN pin. During boost mode, if an over-  
voltage condition is detected (VIN > VBOOSTOVP), after deglitch tDGL(BOOST_OVP), the IC turns off the PWM  
converter, resets EN_BOOST bit to 0, sets fault status bits and sends out a fault pulse on STAT and INT.  
The converter does not restart when VIN drops to the normal level until the EN_BOOST bit is reset to 1.  
Output Over-Current Protection  
The bq2426x contains over current protection to prevent the device and battery damage when IN is  
overloaded. When an over-current condition occurs, the cycle-by-cycle current limit limits the current from  
the battery to the load. If the overload condition lasts for 8ms, the overload fault is detected. When an  
overload condition is detected, the bq2426x turns off the PWM converter, resets EN_BOOST bit to 0,  
sets the fault status bits and sends out the fault pulse on STAT and INT. The boost operation starts only  
after the fault is cleared and the EN_BOOST bit is reset to 1 using the I2C.  
Battery Voltage Protection  
During boost mode, when the battery voltage is below the minimum battery voltage threshold, VBATUVLO  
,
the IC turns off the PWM converter, resets EN_BOOST bit to 0, sets fault status bits and sends out a  
fault pulse on STAT and INT. Once the battery voltage returns to the acceptable level, the boost starts  
only after the EN_BOOST bit is set to 1. Proper operation below 3.3V down to the VBATUVLOis not  
guaranteed.  
Serial Interface Description  
The bq24260 uses an I2C compatible interface to program charge parameters. I2C ™ is a 2-wire serial interface  
developed by NXP (formerly Philips Semiconductor, see I2C-Bus Specification, Version 5, October 2012). The  
bus consists of a data line (SDA) and a clock line (SCL) with pull-up structures. When the bus is idle, both SDA  
and SCL lines are pulled high. All the I2C compatible devices connect to the I2C bus through open drain I/O pins,  
SDA and SCL. A master device, usually a microcontroller or a digital signal processor, controls the bus. The  
master is responsible for generating the SCL signal and device addresses. The master also generates specific  
conditions that indicate the START and STOP of data transfer. A slave device receives and/or transmits data on  
the bus under control of the master device.  
The bq2426x device works as a slave and supports the following data transfer modes, as defined in the I2C  
Bus™ Specification: standard mode (100 kbps) and fast mode (400 kbps). The interface adds flexibility to the  
battery charge solution, enabling most functions to be programmed to new values depending on the  
instantaneous application requirements. The I2C circuitry is powered from IN when a supply is connected. If the  
IN supply is not connected, the I2C circuitry is powered from the battery through BAT. The battery voltage must  
stay above VBATUVLO with no input connected in order to maintain proper operation.  
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The data transfer protocol for standard and fast modes is exactly the same; therefore, they are referred to as the  
F/S-mode in this document. The bq24260/1/2 device only supports 7-bit addressing. The device 7-bit address is  
defined as ‘1101011’ (0x6Bh).  
To avoid I2C hang-ups, a timer (tI2CRESET) runs during I2C transactions. If the transaction takes longer than  
tI2CRESET, any additional commands are ignored and the I2C engine is reset. The timeout is reset with START  
and repeated START conditions and stops when a valid STOP condition is sent.  
F/S Mode Protocol  
The master initiates data transfer by generating a start condition. The start condition is when a high-to-low  
transition occurs on the SDA line while SCL is high, as shown in Figure 29. All I2C -compatible devices should  
recognize a start condition.  
DATA  
CLK  
S
P
START Condition  
STOP Condition  
Figure 29. START and STOP Condition  
The master then generates the SCL pulses, and transmits the 8-bit address and the read/write direction bit R/W  
on the SDA line. During all transmissions, the master ensures that data is valid. A valid data condition requires  
the SDA line to be stable during the entire high period of the clock pulse (see Figure 30). All devices recognize  
the address sent by the master and compare it to their internal fixed addresses. Only the slave device with a  
matching address generates an acknowledge (see Figure 31Figure 11) by pulling the SDA line low during the  
entire high period of the ninth SCL cycle. Upon detecting this acknowledge, the master knows that  
communication link with a slave has been established.  
DATA  
CLK  
Data Line  
Stable;  
Data Valid  
Change  
of Data  
Allowed  
Figure 30. Bit Transfer on the Serial Interface  
The master generates further SCL cycles to either transmit data to the slave (R/W bit 0) or receive data from the  
slave (R/W bit 1. In either case, the receiver needs to acknowledge the data sent by the transmitter. So an  
acknowledge signal can either be generated by the master or by the slave, depending on which one is the  
receiver. The 9-bit valid data sequences consisting of 8-bit data and 1-bit acknowledge can continue as long as  
necessary. To signal the end of the data transfer, the master generates a stop condition by pulling the SDA line  
from low to high while the SCL line is high (see Figure 29). This releases the bus and stops the communication  
link with the addressed slave. All I2C compatible devices must recognize the stop condition. Upon the receipt of  
a stop condition, all devices know that the bus is released, and wait for a start condition followed by a matching  
address. If a transaction is terminated prematurely, the master needs to send a STOP condition to prevent the  
slave I2C logic from remaining in a incorrect state. Attempting to read data from register addresses not listed in  
this section will result in 0xFFh being read out.  
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Data Output  
by Transmitter  
Not Acknowledge  
Data Output  
by Receiver  
Acknowledge  
8
SCL From  
1
Master  
9
2
Clock Pulse for  
Acknowledgement  
START  
Condition  
Figure 31. Acknowledge on the I2C Bus  
Recognize START or  
REPEATED START  
Condition  
Recognize STOP or  
REPEATED START  
Condition  
Generate ACKNOWLEDGE  
Signal  
P
SDA  
Acknowledgement  
Signal From Slave  
MSB  
Sr  
Address  
R/W  
SCL  
S
or  
Sr  
or  
P
ACK  
ACK  
Sr  
Figure 32. Bus Protocol  
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Register Description  
Status/Control Register (READ/WRITE)  
Memory location: 00, Reset state: 00xx 0xxx  
BIT  
NAME  
READ/WRITE  
FUNCTION  
B7(MSB)  
TMR_RST  
Read/Write  
Write: TMR_RST function, write “1” to reset the watchdog timer (auto clear)  
Read: Always 0  
(bq24260/1 only)  
B6  
EN_BOOST  
Read/Write  
0-Charger Mode  
1-Boost Mode (default 0)  
B5  
B4  
STAT_1  
STAT_0  
Read only  
Read only  
00-Ready  
01-Charge in progress  
10-Charge done  
11-Fault  
B3  
EN_SHIPMODE  
Read/Write  
0-Normal Operation  
1-Ship Mode Enabled (default 0)  
B2  
B1  
FAULT_2  
FAULT_1  
FAULT_0  
Read only  
Read only  
Read only  
000-Normal  
001-VIN > VOVP or Boost Mode OVP  
010- Low Supply connected (VIN<VUVLO or VIN<VSLP) or Boost Mode Overcurrent  
011- Thermal Shutdown  
B0(LSB)  
100-Battery Temperature Fault  
101- Timer Fault (watchdog or safety timer)  
110-Battery OVP  
111-No Battery connected  
EN_BOOST Bit (Operation Mode)  
The EN_BOOST bit selects the operation mode for the bq2426x. Write a “1” to enable boost mode and  
regulate IN to 5V to supply OTG peripherals. See “Boost Mode Operation” section for more details.  
EN_SHIPMODE Bit  
Writing the EN_SHIPMODE bit to a “1” latches off the IC, battery FET and BGATE until a high to low  
transition on UVLO occurs. This means that if EN_SHIPMODE is written to a “1” while the input is  
connected, it must first be removed and then replaced before the battery FET turns on. This allows the  
end product with no load on the battery and the end user will enable the device by plugging it into the  
adapter. The EN_SHIPMODE bit can be cleared using the I2C interface as well.  
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Control Register (READ/WRITE)  
Memory location: 01, Reset state: 1xxx 1100 (bq24260/2), 1xxx 1110 (bq24261)  
BIT  
NAME  
READ/WRITE  
FUNCTION  
Write: 1-Reset all registers to default values  
B7(MSB)  
RESET  
Write only  
0-No effect  
Read: always get “1”  
B6  
B5  
B4  
IN_LIMIT_2  
IN_LIMIT_1  
IN_LIMIT _0  
Read/Write  
Read/Write  
Read/Write  
000-USB2.0 host with 100mA current limit  
001-USB3.0 host with 150mA current limit  
010 – USB2.0 host with 500mA current limit  
011 – USB3.0 host/charger with 900mA current limit  
100 – Charger with 1500mA current limit  
101—Charger with 1950mA current limit  
110 – Charger with 2500mA current limit  
111- Charger with 2000mA current limit (default 000(1)  
)
B3  
B2  
EN_STAT  
TE  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
0-Disable STAT function (STAT only shows faults)  
1-Enable STAT function (default 1)  
0-Disable charge current termination  
1-Enable charge current termination (default 1)  
B1  
CE  
0-Charger enabled  
1-Charger is disabled (default 0-bq24260 / 2, 1-bq24261)  
B0(LSB)  
HZ_MODE  
0-Not high impedance mode  
1-High impedance mode (default 0)  
(1) When in DEFAULT mode, the PSEL (bq24261/2) determine the default input current limit.  
RESET Bit  
The RESET bit in the control register (0x01h) is used to reset all the charge parameters. Write “1” to  
RESET bit to reset all the registers to default values and place the bq2426x into DEFAULT mode and turn  
off the watchdog timer. The RESET bit is automatically cleared to zero once the bq2426x enters  
DEFAULT mode.  
CE Bit (Charge Enable)  
The CE bit is used to disable or enable the charge process. A low logic level (0) on this bit enables the  
charge and a high logic level (1) disables the charge. When charge is disabled, the SYS output regulates  
to VSYS(REG) and battery is disconnected from the SYS. Supplement mode is available if the system load  
demands cannot be met by the supply.  
HZ_MODE Bit (High Impedance Mode Enable)  
The HZ_MODE bit is used to disable or enable the high impedance mode. A low logic level (0) on this bit  
enables the IC and a high logic level (1) puts the IC in a low quiescent current state called high  
impedance mode. When in high impedance mode, the converter is off and the battery FET and BGATE  
are on. The load on SYS is supplied by the battery. BGATE is low (external FET turned on) while in high  
impedance mode.  
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Control/Battery Voltage Register (READ/WRITE)  
Memory location: 02, Reset state: 0001 0100 (BQ24260/1), 1000 1100 (bq24262A)  
BIT  
B7(MSB)  
B6  
NAME  
VBREG5  
READ/WRITE  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
Battery Regulation Voltage: 640mV (default 0)  
VBREG4  
Battery Regulation Voltage: 320mV (default 0)  
Battery Regulation Voltage: 160mV (default 0)  
Battery Regulation Voltage: 80mV (default 1)  
Battery Regulation Voltage: 40mV (default 0)  
Battery Regulation Voltage: 20mV (default 1)  
B5  
VBREG3  
B4  
VBREG2  
B3  
VBREG1  
B2  
VBREG0  
B1  
MOD_FREQ1  
MOD_FREQ0  
Modify Switching Frequency Target –  
00 – No Change to Nominal Frequency Target  
01 – +10% Change to Nominal Frequency  
10 – -10% Change to Nominal Frequency  
11 – NA (default 00)  
B0(LSB)  
VBREG Bits (Battery Regulation Threshold setting)  
Use VBREG bits to set the battery regulation threshold. The VBATREG is calculated using the following  
equation:  
indent VBATREG = 3.5 V + VBREGCODE × 20 mV  
The charge voltage range is 3.5V to 4.44V with the offset of 3.5V and step of 20mV. The default setting is  
3.6V for the BQ24260 and BQ24261. The default setting is 4.2V for the bq24262A. If a value greater than  
4.44V is written, the setting goes to 4.44V. It is recommended to set VBATREG above VMINSYS  
.
MOD_FREQx Bits (Frequency Modification)  
The MOD_FREQx bits are used to change the switching frequency by ±10%. This is used for applications  
where the 1.5MHz switching frequency noise interferes with other device operation. The frequency may  
be modified by ±10% of the nominal frequency.  
Vender/Part/Revision Register (READ only)  
Memory location: 03, Reset state: 0100 0010 (bq24262A), 0100 0110 (BQ24260/1)  
BIT  
B7(MSB)  
B6  
NAME  
Vendor2  
Vendor1  
Vendor0  
PN1  
READ/WRITE  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
FUNCTION  
Vender Code: bit 2 (default 0)  
Vender Code: bit 1 (default 1)  
Vender Code: bit 0 (default 0)  
For I2C Address 6Bh: 00 – bq24260  
B5  
B4  
B3  
PN0  
B2  
NA  
NA  
NA  
NA  
B1  
NA  
B0(LSB)  
NA  
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Battery Termination/Fast Charge Current Register (READ/WRITE)  
Memory location: 04, Reset state: 0010 1010  
BIT  
B7(MSB)  
B6  
NAME  
ICHRG4  
ICHRG3  
ICHRG2  
ICHRG1  
ICHRG0  
ITERM2  
ITERM1  
ITERM0  
READ/WRITE  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
Charge current 1600mA – (default 0)  
Charge current: 800mA — (default 0)  
Charge current: 400mA —(default 1)  
Charge current: 200mA — (default 0)  
Charge current: 100mA (default 1)  
B5  
B4  
B3  
B2  
Termination current sense: 200mA (default 0)  
B1  
Termination current sense voltage: 100mA (default 1)  
Termination current sense voltage: 50mA (default 0)  
B0(LSB)  
ICHRG Bits (Charge Current Regulation Threshold setting)  
Use ICHRG bits to set the charge current regulation threshold. The charge current is programmable from  
500mA to 3A in 100mA steps. The default is 1A. The ICHARGE is calculated using the following equation:  
indentICHARGE = 500 mA + ICHRGCODE × 100 mA  
Any setting programmed above 3A selects the 3A setting.  
ITERM Bits (Charge Current Termination Threshold setting)  
Use ITERM bits to set the charge current termination threshold. The termination threshold is programmable  
from 50mA to 300mA in 50mA steps. The default is 150mA. The ITERM is calculated using the following  
equation:  
indentITERM = 50 mA + ITERMCODE × 50 mA  
Any setting programmed above 300mA selects the 300mA setting.  
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VIN-DPM Voltage/ MINSYS Status Register  
Memory location: 05, Reset state: xx00 x000  
BIT  
NAME  
READ/WRITE  
FUNCTION  
B7(MSB)  
MINSYS_STATUS  
Read only  
0 – Minimum System Voltage mode is not active  
1 – Minimum System Voltage mode is active (low battery  
B6  
B5  
B4  
B3  
VINDPM_STATUS  
LOW_CHG  
Read only  
Read/Write  
Read/Write  
Read Only  
0 – VIN-DPM mode is not active  
1 – VIN-DPM mode is active  
0 – Normal charge current set by 04h  
1 – Low charge current setting 300mA (default 0)  
D+/D– EN  
0 – Bit returns to 0 after D+/D- detection is performed  
1 – Force D+/D- detection (bq24260 only, default 0)  
CD_STATUS  
0 – CD low, IC enabled  
1 – CD high, IC disabled  
B2  
B1  
VINDPM2  
VINDPM1  
VINDPM0  
Read/Write  
Read/Write  
Read/Write  
Input VIN-DPM voltage: VDPMOFF + 8% (default 0)  
Input VIN-DPM voltage: VDPMOFF + 4% (default 0)  
Input VIN-DPM voltage: VDPMOFF + 2% (default 0)  
B0(LSB)  
VIN-DPM voltage offset is programmable using the VINDPM_OFF bit (bit 0 of register 0x06) and default VIN-DPM  
threshold is 4.2V.  
LOW_CHG Bit (Low Charge Mode Enable)  
The LOW_CHG bit is used to reduce the charge current to a minimum current. This feature is used by  
systems where battery NTC is monitored by the host and requires a reduced charge current setting or by  
systems that need a “preconditioning” current for low battery voltages. Write a “1” to this bit to charge at  
300mA. Write a “0” to this bit to charge at the programmed charge current.  
VINDPM Bits (VINDPM Threshold setting)  
Use VINDPM bits to set the VINDPM regulation threshold. The VINDPM threshold is calculated using the  
following equation:  
indentVINDPM = VINDPM_OFF + VINDPMCODE × 2% × VINDPM_OFF  
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Safety Timer/ NTC Monitor Register (READ/WRITE)  
Memory location: 06, Reset state: 1001 1xx0  
BIT  
NAME  
READ/WRITE  
FUNCTION  
B7(MSB)  
2XTMR_EN  
Read/Write  
0 – Timer not slowed at any time  
1 – Timer slowed by 2x when in thermal regulation, VIN_DPM or input current limit  
(default 1)  
B6  
B5  
TMR_1  
TMR_2  
Read/Write  
Read/Write  
Safety Timer Time Limit –  
00 – 1.25 minute fast charge  
01 – 6 hour fast charge  
10 – 9 hour fast charge  
11 – Disable safety timers (default 00)  
(bq24260/1 only)  
B4  
B3  
BOOST_ILIM  
TS_EN  
Read/Write  
Read/Write  
0 – 500mA  
1 – 1A (Default 1)  
0 – TS function disabled  
1 – TS function enabled (default 1)  
B2  
B1  
TS_FAULT1  
TS_FAULT0  
Read only  
Read only  
TS Fault Mode:  
00 – Normal, No TS fault  
01 – TS temp < TCOLD or TS temp > THOT(Charging suspended)  
10 – TCOOL > TS temp > TCOLD (Charge current reduced by half)  
11 – TWARM < TS temp < THOT (Charge voltage reduced by 100mV)  
B0(LSB)  
VINDPM_OFF  
Read/Write  
0 – 4.2V  
1 – 10.1V  
(Default 0)  
BOOST_ILIM Bit (Boost current limit setting)  
The BOOST_ILIM bit programs the cycle by cycle current limit threshold for boost operation. The 1A  
setting sets the low side cycle by cycle current limit to 4A (typ). This ensures that at least 1A can be  
supplied from the boost converter over the entire battery range. The 500mA setting sets the current limit  
to 2A(typ) to ensure at least 500mA available from the boost converter. See the boost mode over-current  
section for more details.  
VINDPM_OFF Bit (VINDPM offset setting)  
The VINDPM_OFF bit programs the offset for the VINDPM function. The 4.2V setting is intended to work  
with a standard 5V output adapter. The 10.1V setting supports 12V adapters and the 12V output for the  
new USB Power Delivery specification (USB PD).  
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APPLICATION INFORMATION  
Output Inductor and Capacitor Selection Guidelines  
When selecting an inductor, several attributes must be examined to find the right part for the application. First,  
the inductance value should be selected. The bq2426x is designed to work with 1.5µH to 2.2µH inductors. The  
chosen value will have an effect on efficiency and package size. Due to the smaller current ripple, some  
efficiency gain is reached using the 2.2µH inductor, however, due to the physical size of the inductor, this may  
not be a viable option. The 1.5µH inductor provides a good tradeoff between size and efficiency.  
Once the inductance has been selected, the peak current must be calculated in order to choose the current  
rating of the inductor. Use Equation 5 to calculate the peak current.  
%
æ
ö
RIPPPLE  
IPEAK = ILOAD(MAX) ´ 1+  
ç
÷
2
è
ø
(5)  
The inductor selected must have a saturation current rating greater than or equal to the calculated IPEAK. Due to  
the high currents possible with the bq2426x, a thermal analysis must also be done for the inductor. Many  
inductors have 40°C temperature rise rating. This is the DC current that will cause a 40°C temperature rise  
above the ambient temperature in the inductor. For this analysis, the typical load current may be used adjusted  
for the duty cycle of the load transients. For example, if the application requires a 1.5A DC load with peaks at  
2.5A 20% of the time, a Δ40°C temperature rise current must be greater than 1.7A:  
ITEMPRISE = ILOAD + D × (IPEAK – ILOAD) = 1.5 A + 0.2 × (2.5 A – 1.5 A) = 1.7 A  
The bq2426x’s internal loop compensation is designed to be stable with 10µF to 150µF of local capacitance but  
requires at least 20µF total capacitance on the SYS rail (10µF local + 10µF distributed). The capacitance on the  
SYS rail can be higher than 150µF if distributed amongst the rail. To reduce the output voltage ripple, a ceramic  
capacitor with the capacitance between 10µF and 47µF is recommended for local bypass to SYS. If greater than  
100µF effective capacitance is on the SYS rail, place at least 10µF bypass on the BAT pin. Pay special attention  
to the DC bias characteristics of ceramic capacitors. For small case sizes, the capacitance can be derated as  
high as 70% at workable voltages. All capacitances specified in this datasheet are effective capacitance, not  
capacitor value.  
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PCB Layout Guidelines  
It is important to pay special attention to the PCB layout. Figure 33 provides a sample layout for the high current  
paths of the bq2426xYFF. Figure 34 provides a sample layout for the high current paths of the bq2426xRGE.  
PMID and IN  
Cap Gnds  
Close together  
PMID  
PGND  
IN Cap  
SW  
Close to  
IN Pin  
BOOT  
Thermal  
SYS Cap  
Vias connect  
To PGND  
Close to  
SYS Pins  
BAT Cap  
Close to  
BAT Pins  
Figure 33. Recommended bq2426x PCB Layout for WCSP Package  
sp  
PGND  
SW  
PMID  
PMID and IN  
Cap Gnds  
BOOT  
Close together  
SYS Cap  
IN Cap  
Close to  
Close to  
SYS Pins  
IN Pin  
BAT Cap  
Thermal  
Close to  
Vias connect  
BAT Pins  
To GND  
Figure 34. Recommended bq2426x PCB Layout for QFN Package  
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The following provides some guidelines:  
Place 1µF input capacitor as close to PMID pin and PGND pin as possible to make high frequency current  
loop area as small as possible.  
Connect the GND of the PMID and IN caps as close as possible.  
Place 4.7µF input capacitor as close to IN pin and PGND pin as possible to make high frequency current loop  
area as small as possible.  
The local bypass capacitor from SYS to GND should be connected between the SYS pin and PGND of the  
IC. The intent is to minimize the current path loop area from the SW pin through the LC filter and back to the  
PGND pin.  
Place all decoupling capacitors close to their respective IC pin and as close as to PGND as possible. Do not  
place components such that routing interrupts power stage currents. All small control signals should be routed  
away from the high current paths.  
The PCB should have a ground plane (return) connected directly to the return of all components through vias.  
Two vias per capacitor for power-stage capacitors and one via per capacitor for small-signal components. It is  
also recommended to put vias inside the PGND pads for the IC, if possible. A star ground design approach is  
typically used to keep circuit block currents isolated (high-power/low-power small-signal) which reduces noise-  
coupling and ground-bounce issues. A single ground plane for this design gives good results.  
The high-current charge paths into IN, BAT, SYS and from the SW pins must be sized appropriately for the  
maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be  
connected to the ground plane to return current through the internal low-side FET.  
For high-current applications, the balls for the power paths should be connected to as much copper in the  
board as possible. This allows better thermal performance as the board pulls heat away from the IC.  
spacer  
REVISION HISTORY  
Changes from Original (December 2013) to Revision A  
Page  
Deleted "PREVIEW" from the bq24261RGE device in the Ordering Info table. ................................................................... 2  
Added specifications to Electrical Characteristics table pertaining to RGE package. .......................................................... 4  
Added separate lines for IINLIM current for YFF and RGE packages. ................................................................................... 5  
Changed VDO_DRV spec MAX voltage from "500 mV" to "450 mV" ....................................................................................... 5  
Changed VIN to VIN in the Input Over-Voltage Protection section. ...................................................................................... 17  
Changed text string in Battery Charging Process section from " IBATSHORT" to " IBATSHRT" for clarification. ......................... 18  
Changed several device references from "bq24260" to "bq2426x" in the Detailed Description section. ........................... 20  
Changed the wording of the Safety Timer description for clarification. .............................................................................. 22  
Changed text in the F/S Mode Protocol section from "...to either transmit data to the slave (R/W bit 1) or receive  
data from the slave (R/W bit 0" to "...to either transmit data to the slave (R/W bit 0) or receive data from the slave  
(R/W bit 1" for clarification. ................................................................................................................................................. 27  
Copyright © 2013–2014, Texas Instruments Incorporated  
Submit Documentation Feedback  
37  
Product Folder Links: bq24260 bq24261 bq24262A  
PACKAGE OPTION ADDENDUM  
www.ti.com  
12-Feb-2014  
PACKAGING INFORMATION  
Orderable Device  
BQ24260SYFFR  
BQ24260SYFFT  
BQ24261RGER  
BQ24261RGET  
BQ24261YFFR  
BQ24261YFFT  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
PREVIEW  
DSBGA  
DSBGA  
VQFN  
YFF  
36  
36  
24  
24  
36  
36  
Green (RoHS  
& no Sb/Br)  
SNAGCU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
BQ24260S  
PREVIEW  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
YFF  
RGE  
RGE  
YFF  
YFF  
Green (RoHS  
& no Sb/Br)  
SNAGCU  
BQ24260S  
3000  
250  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
SNAGCU  
VQFN  
Green (RoHS  
& no Sb/Br)  
DSBGA  
DSBGA  
3000  
250  
Green (RoHS  
& no Sb/Br)  
BQ24261  
BQ24261  
Green (RoHS  
& no Sb/Br)  
SNAGCU  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
12-Feb-2014  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
13-Feb-2014  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
BQ24260SYFFR  
BQ24260SYFFT  
BQ24261RGER  
BQ24261RGET  
BQ24261YFFR  
BQ24261YFFT  
DSBGA  
DSBGA  
VQFN  
YFF  
YFF  
RGE  
RGE  
YFF  
YFF  
36  
36  
24  
24  
36  
36  
0
180.0  
180.0  
330.0  
180.0  
180.0  
180.0  
8.4  
8.4  
2.54  
2.54  
4.25  
4.25  
2.54  
2.54  
2.54  
2.54  
4.25  
4.25  
2.54  
2.54  
0.76  
0.76  
1.15  
1.15  
0.76  
0.76  
4.0  
4.0  
8.0  
8.0  
4.0  
4.0  
8.0  
8.0  
Q1  
Q1  
Q2  
Q2  
Q1  
Q1  
0
3000  
250  
3000  
250  
12.4  
12.4  
8.4  
12.0  
12.0  
8.0  
VQFN  
DSBGA  
DSBGA  
8.4  
8.0  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
13-Feb-2014  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
BQ24260SYFFR  
BQ24260SYFFT  
BQ24261RGER  
BQ24261RGET  
BQ24261YFFR  
BQ24261YFFT  
DSBGA  
DSBGA  
VQFN  
YFF  
YFF  
RGE  
RGE  
YFF  
YFF  
36  
36  
24  
24  
36  
36  
0
210.0  
210.0  
367.0  
210.0  
182.0  
182.0  
185.0  
185.0  
367.0  
185.0  
182.0  
182.0  
35.0  
35.0  
35.0  
35.0  
17.0  
17.0  
0
3000  
250  
3000  
250  
VQFN  
DSBGA  
DSBGA  
Pack Materials-Page 2  
D: Max = 2.485 mm, Min =2.425 mm  
E: Max = 2.485 mm, Min =2.425 mm  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other  
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
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TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and  
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