AT-250TR [TE]
Voltage Variable Absorptive Attenuator DC - 2 GHz; 可变电压衰减器吸收DC - 2 GHz的
| 型号： | AT-250TR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Voltage Variable Absorptive Attenuator DC - 2 GHz |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VoltageVariable Absorptive Attenuator
DC - 2 GHz
AT-250
V 2.00
SO-8
Features
● 12 dB Voltage Variable Attenuation
● Low Intermodulation Products
● Low DC Power Consumption: 50 µW
● Single Voltage Control 0 to -4 Volts
● Nanosecond Switching Speed
● Temperature Range: -40˚C to +85˚C
● Low Cost SOIC 8 Plastic Package
1
● Tape and Reel Packaging Available
Description
M/A-COM’s AT-250 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 8-lead surface mount plastic pack-
age. The AT-250 is ideally suited for use where attenuation fine
tuning, fast switching and very low power consumption are
required. Typical applications include radio, cellular, GPS equip-
ment and other Automatic Gain/Level Control circuits.
Ordering Information
Part Number
The AT-250 is fabricated with a monolithic GaAs MMIC using a
mature 1-micron process. The process features full chip passiva-
tion for increased performance and reliability.
Package
AT-250 PIN
SOIC 8-Lead Plastic Package
Forward Tape & Reel
AT-250TR
AT-250RTR
Reverse Tape & Reel
Electrical Specifications, TA = +25°C
Parameter
Insertion Loss
Test Conditions2
Unit
Min.
Typ.
2.9
3.0
3.2
3.4
+/– 0.1
+/– 0.2
+/– 0.5
+/– 1.2
Max
3.1
3.2
3.5
3.8
+/– 0.3
+/– 0.4
+/– 0.8
+/– 1.5
DC – 0.1 GHz
DC – 0.5 GHz
DC – 1.0 GHz
DC – 2.0 GHz
DC – 0.1 GHz
DC – 0.5 GHz
DC – 1.0 GHz
DC – 2.0 GHz
dB
dB
dB
dB
dB
dB
dB
dB
Flatness
(Peak to Peak)
VSWR
2.1:1
Trise, Tfall
Ton, Toff
Transients
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In Band
nS
nS
mV
3
5
10
Power
Handling
Linear Operation
Absolute Max Input Power
dBm
dBm
13
21
Measured Relative
to Input Power
0.05 GHz
0.5 – 2.0 GHz
28
40
34
47
IP
2
dBm
(For two-tone Input Power Up to +5 dBm)
Measured Relative
to Input Power
0.05 GHz
0.5 – 2.0 GHz
dBm
dBm
18
18.5
31(3)
36(3)
IP
3
(For two-tone Input Power Up to +5 dBm)
1. Refer to “Tape and Reel Packaging”Section, or contact factory.
2.All measurements at 1 GHz in a 50Wsystem, unless otherwise specified.A control voltage 0 to -4 volts @ 20 µA typ.
3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.
V 2.00
Absolute Maximum Ratings1
Functional Schematic
Parameter
Absolute Maximum
Max. Input Power
+21 dBm
Control Voltage
+5 V, -8.5 V
Operating Temperature
Storage Temperature
-40°C to +85°C
-65°C to +150°C
1.Operation of this device above any one of these parameters
may cause permanent damage.
Typical Performance
Pin Configuration
Pin No.
Description
RF1
1
2
3
4
5
6
7
8
GND
GND
A
GND
GND
GND
RF2
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