U3500BM-BFLG3 [TEMIC]
Cordless Telephone Signal Processor; 无绳电话信号处理器
| 型号： | U3500BM-BFLG3 |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Cordless Telephone Signal Processor |
| 文件： | 总17页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U3500BM
Cordless Telephone Signal Processor
Description
The programmable cordless phone signal processor such as IF converter, FM demodulator. RSSI and low
includes all necessary low frequency parts such as noise amplifier.
microphone- and earphone amplifier, compander, pre- Several gains and mutes in transmit and receive direction
emphasis, deemphasis, scrambler, data management, are controlled by serial bus while compander, pre- and
power-supply management, as well as RF receiving parts deemphasis and scrambler can be bypassed.
Features
RF Receiver Part
Compander
Low-noise amplifier
Pre- and deemphasis
Scrambler
IF converter
FM demodulator
Data management
Power-supply management
Serial bus
RSSI
Low Frequency Part
Symmetrical input of microphone amplifier
Symmetrical output of earpiece amplifier
Application: CT0
Block Diagram
MIXO IFIN1 IFIN2
DACO
IFAMP
RGAIN
ADJ
MIXIN
MIXGND
Deem
RXO
Demodulator
LPF
LPF
LOG
Scrambler
frequency
ETC
Expander
EXIN
RECO2
Oscillator
11.15 MHz
LOIN
Divider
D/A
LPF
REC
RECO1
LNA
LNAIN
MIC1
MIC2
MICO
RGND
LNAO
MIC
VBATT
RXDAT
TXDAT
Battery low
detector
Scrambler
frequency
C
D
Serial
TGAIN
ADJ.2
TGAIN
ADJ.1
COIN
LPF
LPF
Limiter
Preem
GND
Compressor
CTC
Bus
14678
VCC TXO
Figure 1. Block diagram
Rev. A3, 20-May-98
1 (17)
Preliminary Information
U3500BM
Pin Description
Pin Symbol
Function
Transmit section analog output
Compressor time constant
control analog output
Compressor analog input
1
28
TXO
TXDAT
1
2
TXO
CTC
CTC
2
3
4
5
6
7
8
9
27 RXDAT
3
4
5
COIN
26
D
MICO Microphone amplifier output
MIC2
COIN
MICO
Non-inverting input of
microphone amplifier
Inverting input of microphone
amplifier
LF analog/ digital ground
Intermediate receive analog
output
25
C
6
MIC1
24
DACO
MIC2
MIC1
7
8
GND
RXO
23
22
VCC
9
RECO2 Symmetrical output of receive
amplifier
GND
RXO
LOIN
10
RECO1 Symmetrical output of receive
amplifier
21
20
19
VBATT
LNAO
11
12
EMN
ETC
Expander analog input
Expander time constant control
analog output
Symmetrical IF amplifier input
Symmetrical IF amplifier input
RECO2
RECO1
EXIN
ETC
13
14
15
16
IFIN2
IFIN1
MIXO Mixer output
MIXIN Mixer input
10
11
12
RGND
18
17
16
LNAIN
MIXGND
MIXIN
17 MIXGND IF amplifier and mixer ground
18
19
20
LNAIN Low-noise amplifier input
RGND Low-noise amplifier ground
LNAO Low-noise amplifier output/
External LO input
13
14
IFIN2
IFIN1
15 MIXO
21
22
VBATT Battery supply
LOIN
96 11791
Local oscillator input
(11.15 MHz)
Figure 2. Pinning
23
VCC
Supply-voltage output for
peripherals and internal supply
of digital part
24
25
26
27
28
DACO D/A comparator output
C
D
Clock input of serial bus
Data input of serial bus
RXDAT Receive data digital output
TXDAT Transmit data input
Order Information
Extended Type Number
U3500BM-BFL
U3500BM-BFLG3
Package
SO28
SO28
Remarks
Taped and reeled
2 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Absolute Maximum Ratings
Parameters
Symbol
, V
Value
5.5
+125
Unit
V
°C
°C
°C
W
Supply voltage
V
Batt
CC
Junction temperature
Ambient temperature
Storage temperature
T
j
T
amb
–25 to +75
–50 to +125
1
T
stg
Power dissipation
T
= 60°C
P
tot
amb
Thermal Resistance
Parameters
Symbol
R
thJA
Value
120
Unit
K/W
Junction ambient
SO28
Electrical Characteristics
Test conditions (unless otherwise specified): V
= V = 3.6 V, T
= +25°C
Batt
CC
amb
Parameters
Test Conditions / Pins
Symbol Min.
Typ.
Max.
Unit Fig.
Current consumption
ERX2
0
ELNA
0
ERXHF
0
ERX1
0
ERXO
0
EEA
0
EDEE
ETX
0
EPREE
0
0
Operating voltage range
Inactive mode
3.1
30
3.6
60
5.2
80
V
A
V
Batt
= 2.9 V
Standby mode
RX waiting for RSSI
RX waiting for data
Operating current, RX and
TX completely active
100
2.5
1.9
6.5
120
3.4
2.45
9.5
A
ELNA = ERXHF = 1
ELNA = ERXHF = ERX1 = 1
ERX2 = ELNA = ERXHF =
ERX1 = ERXO = EEA=
EDEE = GDEM = ETX = 1
1.7
1.45
4.5
mA
mA
mA
Low noise amplifier (LNA) f = 41.4 MHz, input level = –50 dBm
Supply current
Input impedance
Output impedance
Gain
Noise figure
1-dB input compression
point
Third-order input intercept f = 41.4 MHz
0.8
160
40
1
200
80
23
4
1.2
240
120
26
mA
3
3
3
3
3
3
f = 50 MHz
Bandwidth = 1 MHz
20
dB
dB
dBm
5
–27
–15
–24
–12
dBm
MHz
3
3
point
f = 41.4125 MHz
Input level = –60 dBm
Frequency range FRF
20
50
Rev. A3, 20-May-98
3 (17)
Preliminary Information
U3500BM
Parameters
Test Conditions / Pins
Symbol Min.
Typ.
Max.
Unit Fig.
Receiver
IF mixer, f = 10.7 MHz
Input resistance
2000
2.5
1200
13
–17
–9
3000
3
1500
15
4000
3.5
1800
17
4
Input capacitance
Output impedance
Gain GVMIX
Input compression point
Third-order input intercept
point
pF
4
4
4
4
Input level 7 mV
G
MIX
dB
dBm
dBm
rms
4
Carrier breakthrough from
internal LO (11.15 MHz) to
IF output
Carrier breakthrough from
internal LO (11.15 MHz) to
RF input
300
10
V
rms
4
V
rms
4
5
IF amplifier: RSSI
Input resistance
1.6
2
2.5
k
RSSI-sensitivity
VIF = 0 V
rms
starting from 0 increase RSSI-
level until mean of sampled
signal at DACO is 0.2
RSSI-level = CON0
VIF = 25.4 V
f = 450 kHz
rms,
5
increase RSSI level again
until mean of sampled signal
at DACO is 0.2.
1
RSSI-level = CON1
RSSI-sensitivity =
CON1–CON0
RSSI-input voltage
dynamic range
RSSI-level number of
programmable steps
RSSI-level step size in the
logarithmic region
60
65
dB
dB
5
5
5
127
0.46
*)
0.35
0.6
*) RSSI Level Programming (Typical Values)
Input Voltage VIF ( V
)
RSSI Level (Decimal)
rms
0
5
8
25.4
42.4
424
14
54
97
111
4240
42400
4 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Parameters
Test Conditions / Pins
Symbol Min.
Typ.
Max.
Unit Fig.
RF demodulator
fIF = 450 kHz, fMOD = 1 kHz, V = 500 V
IF
rms
BSCR
1
EDEE
0
GRX0
1
GRX1
1
GRX2
1
GRX3
ERX1
ERXO
1
ERX2
1
0
1
Recovered audio
GDEM = 0, fFM = 2.5 kHz
GDEM = 1, fFM = 5.0 kHz
0.4
0.4
0.8
0.8
1.6
1.6
Vpp
6
Vpp
Recovered audio output
voltage drop
V
Batt
= 3.1 to 5.2 V
–1
+1
dB
6
AM rejection ratio
RX audio
Change of RX0 signal
deemphasis bypass
30% AM
30
35
0
dB
dB
6
6
EDEE = 0
–0.5
0.5
Gain adjust range
Gain adjust step
12
0.8
15
1
17
1.2
dB
dB
6
6
Output signal vs. frequency 100 Hz
–7.5
–2.0
–1.3
–0.8
–6.5
–1.0
–0.3
0.2
–5.5
0
0.7
1.2
–60
relative to 1 kHz (0 dB)
deemphasis bypassed
300 Hz
1800 Hz
3200 Hz
4100 Hz
dB
dB
6
6
Output signal vs. frequency 100 Hz
–0.7
3.7
–5.7
–10
0.3
4.7
–4.7
–9.0
1.3
5.7
–3.7
–8.0
–66
relative to 1 kHz (0 dB)
deemphasis enable
EDEE = 1
300 Hz
1800 Hz
3200 Hz
4100 Hz
Total harmonic distortion
Audio mute
FM = 250 Hz
FM = 2.50 kHz
FM = 2.5 kHz, ERXO = 0
ERX1 = 0, ERX2 = 0
3.5
3.5
%
%
dB
6
6
65
Output impedance
100
Expander
EEA
1
GEA0
0
GEA1
0
GEA2
0
GEA3
1
GEA4
1
Gain reference level
Change of gain when
expander is bypassed
VEXIN = –10 dBV
BCOMP = 1
G
OREC
11
–0.5
13
15
0.5
dB
dB
7
7
rms
Gain tracking
VEXIN = –20 dBV
VEXIN = –30 dBV
VEXIN = –35 dBV
VEXIN = –40 dBV
–21
–41
–53
–19
–39
–47
rms
rms
rms
rms
dB
7
–50
–60
Input impedance
Gain change vs. supply
voltage
9.5
–0.5
14.5
0.5
k
dB
7
7
V
Batt
= 3.1 to 5.2 V
Attack time
VEXIN = step
–20 dBV
measure time after step, when
output voltage has 0.75 times
the final value
t
t
16
16
ms
f
–14 dBV
,
rms
rms
7
7
Release time
VEXIN = step
ms
f
14 dBV
–20 dBV
,
rms
rms
measure time after step, when
output voltage has 1.5 times of
the final value
Rev. A3, 20-May-98
5 (17)
Preliminary Information
U3500BM
Parameters
Test Conditions / Pins
Symbol Min.
Typ.
5
Max.
6
Unit Fig.
Earpiece amplifier BCOMP = 1, EEA = 1, VEXIN = 100 mV
Medium gain
rms
GEA0 GEA1 GEA2 GEA3
4
dB
7
0
0
0
0
GEA4 = 1
Minimum gain
GEA0 GEA1 GEA2 GEA3
–12
–11
–10
0.2
dB
7
0
0
0
0
GEA4 = 0
Gain change versus V
Gain adjust range
Gain adjust step
Output impedance
Distortion
V
Batt
= 3.1 to 5.2 V
–0.2
0.8
dB
dB
dB
7
7
7
7
7
7
S
31
1
10
1.2
30
2
d
t
%
mV
Vpp
Output offset voltage
Output voltage swing
VEXIN = 0 mV
–200
4.8
200
rms
Increase VEXIN until distor-
tion (RECO1/ RECO2) is 5%
GEA0 GEA1 GEA2 GEA3
5.0
20
7
Maximum gain
19
21
dB
1
1
1
1
7
GEA4 = 1
Low Frequency Transmitter
GMIC
1
EPREE
1
BSCR
1
GlTX
1000
G2TX
1000
BCOMP
1
ETX
1
Microphone Amplifier
VMIC = 10 mV , fIN = 1 kHz
rms
Gain
High gain: GMIC = 1
Low gain: GMIC = 0
31
23
–0.2
41
32
24
0
75
10
33
25
0.2
103
35
1
dB
dB
dB
k
8
Gain change versus V
Differential input impedance
Output impedance
V
Batt
= 3.1 to 5.2 V
8
8
8
8
S
Distortion
VMIC = 10 mV
d
t
%
rms
Output noise
VMIC = 0 V high gain
50
V
rmsp
rms
8
(psophmetrically weighted)
TX Audio VCOIN = –20 dBV
Gain
(inputs closed across 200
)
rms
GTX (COIN, TXO)
EPREE = 0
2.5
–0.5
–1
12
0.8
5.5
0
0
15
1
15
1
–0.3
–0.3
0.2
0.9
8.5
0.5
+1
18
dB
9
9
9
9
9
9
9
Change of gain TXO
Gain between 3.2 and 5.2 V
TX gain adjust range adj. 1
TX gain adjust step adj. 1
LIM gain adjust range adj. 2
LIM gain adjust range adj. 2
TX gain vs. frequency
(preemphasis bypassed)
relative to 1 kHz reference
level 0 dB
dB
dB
dB
dB
dB
dB
1.2
0.8
1.2
0.7
0.7
1.2
0.1
100 Hz
300 Hz
1800 Hz
3200 Hz
4100 Hz
–1.3
–1.3
–0.8
–1.9
dB
9
–25.9 –23.9 –21.9
Gain vs. frequency with
preemphasis relative to 1 kHz 300 Hz
reference level 0 dB
100 Hz
–0.8
–6.8
3.3
6.0
16.6
–7.0
–5.8
4.3
–6.0
–4.8
5.3
1800 Hz
3200 Hz
4100 Hz
dB
dB
9
9
7.0
8.0
–14.6 –12.6
Total band ripple
V
= 3.1 to 5.2 V
2
Batt
VCOIN = –20 dBV
6 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Parameters
Test Conditions / Pins
Symbol Min.
Typ.
10
Max.
Unit Fig.
Limiter
Output voltage
Increase VCOIN until d = 5%
at TX0 then measure VTX0
ETX = 0, VCOIN = –l0 dBV
attenuation at TX0 output
1.05
56
7
2.0
Vpp
9
Mute
dB
9
Output impedance TXO
14
k
9
Compressor
BSCR EPREE G2TX0 G2TX1 G2TX2
G2TX3
1
EIX
1
GlTX0
G1TX1 G1TX2 G1TX3
1
0
0
1
0
0
0
1
0
Input impedance
Gain reference level G0TX VCOIN = –10 dBV
Gain change when
compressor is bypassed
BCOMP = 1
9
1
0.5
14
5.5
22
10
0.5
k
dB
dB
9
9
G
0TX
rms
VCOIN = –10 dBV
BCOMP = 1
rms
9
Gain tracking
VCOIN = –30 dBV
VCOIN = –50 dBV
VCOIN = –60 dBV
VCOIN = –70 dBV
VCOIN= step
–11
–21
–22
–9
–19
–28
rms
rms
rms
rms
dB
ms
9
–30
3.5
Attack time
t
t
f
–30 dBV
–18 dBV
rms
rms
measure time after step when
output voltage has 1.5 times
the final value
9
9
Release time
VCOIN= step
14.4
ms
f
–18 dBV
–30 dBV
rms
rms
measure time after step when
output voltage has 0.75 times
the final value
Scrambler
EPREE BSCR
BCOMP
0
0
1
Conversion gain versus
frequency FIN (1 kHz)
reference level 0 dB
FIN=1kHz, FOUT=3.1kHz
FIN=0.1kHz, FOUT=4.0kHz
FIN=0.3kHz, FOUT=3.8kHz
FIN=0.7kHz, FOUT=3.4kHz
FIN=1.8kHz, FOUT=2.3kHz
FIN=2.6kHz, FOUT=1.5kHz
FIN=3.2kHz, FOUT=0.9kHz
FIN=3.4kHz, FOUT=0.7kHz
–1.0
–4.4
–2.1
–0.8
–1.1
–1.1
–2.5
–5
0
1.0
–3.4
–1.1
0.2
–0.1
–0.1
–0.5
–4
–2.4
–0.1
1.2
0.9
0.9
–0.5
–3
dB
11
Carrier break through
10
20
mV
rms
Descrambler
EDEE
0
BSCR
0
BCOMP
1
Conversion gain vs.
frequency
FIN=4kHz, FOUT=0.1kHz
–3.6
–1.3
–0.4
–1.5
–0.4
–1.7
–1.9
–2.6
–0.3
0.6
0.5
0.6
–0.3
–0.9
0.1
–1.6
0.7
1.6
0.5
1.6
0.7
0.1
0.5
FIN=3.8kHz, FOUT=0.3kHz
FIN=3.4kHz, FOUT=0.7kHz
FIN=2.3kHz, FOUT=1.8kHz
FIN=l.5kHz, FOUT=2.6kHz
FIN=0.9kHz, FOUT=3.2kHz
FIN=0.7kHz, FOUT=3.4kHz
Measure FOUT = 4.099 kHz
11
dB
Carrier break through
Rev. A3, 20-May-98
mV
rms
7 (17)
Preliminary Information
U3500BM
Parameters
Data management
Receive data management
Test Conditions / Pins
Symbol
Min.
0.4
Typ.
0.5
Max.
0.6
Unit Fig.
GDEM
1
ERX1 ERXHF
1
1
Duty cycle RXDAT
V = 100 V
IF rms
f
f
= 450 kHz
IF
10
= 1 kHz
= 5 kHz
MIF
f
IF
Transmit data management
Input impedance TXDAT
Final value of step re-
sponse
ETX1
1
200
311
k
mV
10
10
ETDM = 1, BSCR = 1
= step
1.5 V → 1.75 V
V
TXDAT
Measure step at TXO
Logical Part
Inputs: C, D
Low voltage input
High voltage input
Input leakage current
0.2
0.1
V
CC
0.8
V
CC
(0 < VI < V )
CC
–1
+5
A
A
Input LOIN
Input leakage current
(0 < VI < V
–5
5
)
CC
Outputs: DACO, RXDAT
Output low
lol = 10 A
V
CC
Output high
loh = –10 A
0.9 V
CC
Serial bus
Data set-up time
Data hold time
Clock low time
Clock high time
Hold time before transfer
condition
tsud
thd
tcl
tch
teon
0.1
0
2
2
0.1
s
s
s
s
s
14
Data low pulse on transfer teh
condition
0.2
0.2
s
s
Data high pulse on
transfer condition
teof
8 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Parameters
Battery Management
Max bat low
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit Fig.
DA0 to 6 = 1, RBAT = 1
DA0 to 6 = 27 BIN,
RBAT = 1
3.7
3.05
3.95
3.2
4.1
3.35
V
V
Min bat low over switch
Max bat high
Min bat high
Adjust step
DA0 to 6 = 1, RBAT = 0
DA0 to 6 = 0, RBAT = 0
4.75
3.83
3.5
852.5
100
5.05
4.1
7.5
952.5 1052.5
200
5.25
4.27
11.5
V
V
mV
mV
mV
Max – Min
MINBL – SWOFF
Battery Switch
Off threshold
On threshold
300
DA0 to 6 = 1, RBAT = 1
DA0 to 6 = 27 BIN,
RBAT = 1
2.9
3.1
3.0
3.2
3.1
3.35
V
V
Hysteresis
Switch ron
220
250
35
280
50
mV
DA0 to 6 = 0, RBAT = 0
Max bat low
Min bat low
Max bat high
Min bat high
Adjust step
:
MAXL (battery voltage when all DAC bits are high, low range)
MINBL (battery voltage when DAC bits are 001 1011, low range)
MAXBH (battery voltage when all DAC bits are high, high range)
MINBH (battery voltage when all DAC bits are low, high range)
Adjust step
:
:
:
:
:
:
:
:
:
:
Max – Min
MAXBH – MINBH
MINBL – SWOFF
Off threshold
On threshold
Hysteresis
MINBL – SWOFF
SWOFF (off threshold of the battery switch)
SWON (on threshold of the battery switch)
SWON– SWOFF
Switch ron
Switch Ron (resistance of the switch transistor, when switch is “ON”)
LNAIN
1 nF
LNAO
18
20
LNA
100 pF
MIXIN 16
15 MIXO
200 Ω
3 kΩ
10 nF
50 Ω
VFRF
1.5 kΩ
VFRF
11.15 MHz
RF generator
100 nF
VBATT
RF generator
11779
11780
Figure 3.
Figure 4.
Rev. A3, 20-May-98
9 (17)
Preliminary Information
U3500BM
20 kΩ
100 nF
26
25
D
C
MICO
MIC2
MIC1
4
5
6
Setup
IFIN2 13
26
25
D
C
RSSI–level
programming
IFIN1
14
Setup
100 nF
24 DACO
RSSI–level
information
VMIC
100 Ω
100 Ω
V
IF
100 nF
11781
11784
Figure 5.
Figure 8.
2
3
26
D
C
CTC
IFIN2
13
14
470 nF
100 nF
Setup
8
RXO
25
1
IFIN1
100 nF
470 nF
COIN
TXO
VIF
100 nF
2.5 kΩ
14696
VCOIN
100 kΩ
Figure 6.
11785
Figure 9.
RECO2
9
26
25
D
C
28 TXDAT
27 RXDAT
TXO
1
Setup
1 kΩ
VTXDAT
1.5 V
RECO1 10
100 kΩ
EXIN
ETC
11
12
100 nF
26
25
D
C
IFIN2 13
IFIN1 14
100 nF
Setup
100 nF
VEXIN
470 nF
VIF
11783
14679
Figure 7.
Figure 10.
10 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
DATA
F–3 dB=3.35 kHz
F–3 dB=3.95 kHz
Output buffer
Gain stage
Signal: 4.1 kHz/DC/OFF
Signal: 1 kHz
State : SCRON/SCROFF/DATA
Gain : –4 dB/0 dB/OFF
State : SCRON/SCROFF
Gain : 5.9 dB/1.9 dB
F–3 dB=90 Hz
F–3 dB=3.95 kHz
F–3 dB=3.35 kHz
RGAIN
ADJ
Demo–
dulator
Deemphasis
Signal: 4.1 kHz/DC/OFF
Signal: 1 kHz
State : DESCRON/DESCROFF/DATA
Gain : –4 dB/0 dB/OFF
State : DESCRON/DESCROFF
Gain : –0.5 dB/–4.5 dB
F–3 dB=1 kHz
Comparator
DATA
11786
Figure 11.
Serial Bus Interface
The circuit is remoted by an external microcontroller
through the serial bus (programming can be started 10 s
after power supply settled).
The data is an 12-bit word:
A3 – A0: address of the destination register (0 to 15)
D7 – D0: contents of register
Data
D
Micro-
processor
Clock
C
The data line must be stable when the clock is high and
data must be serially shifted.
96 11787
After 12 clock periods, the transfer to the destination reg-
ister is (internally) generated by a low-to-high transition
of the data line when the clock is high.
Figure 12.
Rev. A3, 20-May-98
11 (17)
Preliminary Information
U3500BM
Data
D0
D1
D2
A1
A2
A3
(D)
Clock
(C)
Ist word
2nd word
13317
Word transmission
Figure 13.
Transfer condition
Data
8
4
Clock
0
Address
decoder
128 latches
Commands
15
96 11789
Figure 14.
Data
(D)
A1
A2
A3
D0
(C)
Clock
t
t
hd
t
ch
t
cl
t
t
eh
t
eoff
sud
eon
13318
Figure 15.
12 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Content of Internal Registers
The registers have the following structure:
D7
D6
D5
D4
D3
D2
D1
D0
RO: Reference for D/A converter
MUXDA
DA6
DA5
DA4
DA3
DA2
DA1
DA0
MUXDA:
DA(6:0):
D/A multiplexing
Reference voltage D/A
R1: Gain adjustment RECLF
GEA3 GEA2
GEA1
GEA0
GRX3
G1TX3
ERX1
GRX2
GRX1
G1TX1
ELNA
GRX0
G1TX0
ERX2
GEA(3:0): Gain earpiece amplifier (see also R5)
GRX(3:0): Gain adjustment RX
R2: Gain adjustment TRANLF
G2TX3
G2TX2
G2TX1
G2TXO
G1TX2
ERXHF
G2TX(3:0): Gain adjustment TX after limiter
G1TX(3:0): Gain adjustment TX
R3: Enable functions receive
GDEM
EDDE
EEA
ERXO
GDEM:
EDDE:
EEA:
ERXO:
ERXHF:
ELNA:
ERX(l:0):
Gain demodulator
Enable deemphasis (disables bypass)
Enable earpiece amplifier
Enable RXO output
Enable mixer and IF amplifier
Enable low-noise amplifier
Enable parts of RXLF
R4: Enable functions transmit
SSCCK
RBAT
BCOMP
BSCR
GMIC
ETDM
EPREE
ETX
SSCCK:
RBAT:
BCOMP:
BSCR:
GMIC:
ETDM:
EPREE:
ETX:
Shift SC-clock (chifts SC-clock by 17/16)
Battery detection high/low range
Bypass compressor and expander
Bypass scrambler and descrambler
Gain of microphone preamplifier
Enable transmit data management
Enable preemphasis (disables bypass)
Enable TX low frequency part
R5:
free
free
free
free
free
free
GEA4
EXTLO
GEA4:
EXTLO:
Gain earpiece amplifier MSB (see also R1)
Select input mixer
R6 – R15: reserved for U3550BM
Rev. A3, 20-May-98
13 (17)
Preliminary Information
U3500BM
Example of Mode Setting Using Enable Bits
(U3500B + U3550B)
Active Mode
(Transmission)
Active Mode
(PLL
Convergence
Waiting)
Receive Mode Receive Mode Standby Mode Inactive Mode
(Only Data)
(RX Waiting)
(ex. Battery
Low)
(Switch Off)
*PA (VTX PIN),
EEA
X
X
*EVCO1 ETX,
ERX2, ERXO
X
ERX1
X
X
X
X
X
X
ERXHF, ELNA
*EVCO3
X
RSSI / Battery
Management
(MUXDA)
LOGIC PART
(Enables when VBatt
> 3.2 V)
X
X
X
X
X
X
X
X
X
X
Switch Comparator
(Always Enabled)
X
* refer to U3550BM
14 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Application Circuit
Figure 16.
Rev. A3, 20-May-98
15 (17)
Preliminary Information
U3500BM
Package Information
9.15
8.65
Package SO28
Dimensions in mm
18.05
17.80
7.5
7.3
2.35
0.25
0.25
0.10
0.4
10.50
10.20
1.27
16.51
28
15
technical drawings
according to DIN
specifications
13033
1
14
16 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC Semiconductor GmbH semiconductor division has been able to use its policy of continuous improvements
to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev. A3, 20-May-98
17 (17)
Preliminary Information
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