U3501BM [TEMIC]
Cordless Telephone Signal Processor; 无绳电话信号处理器
| 型号： | U3501BM |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Cordless Telephone Signal Processor |
| 文件： | 总20页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U3501BM
Cordless Telephone Signal Processor
Description
Cordless telephone signal processor reduces the need for
many external components.
Features
RF Receiver Part
coding, transmit and receive part adjustable and mutable
by serial bus, compander, pre-/ de-emphasis, scrambler
with bypass function
IF converter, FM demodulator, RSSI-digital information
LF Part
Application: CT1, CT1P, 900 MHz USA standard
Microphone amplifier, earpiece amplifier, compander,
preemphasis, deemphasis, scrambler, descrambler,
digital power management, data management by FSK Package: SO28
Block Diagram
IFIN2
IFIN1
MIXO
DACO
RECDC
RXO
ETC
LPF
IFAMP
MIXIN
DFIL
RDEMO
RGAIN
ADJ
LPF
Demodulator
MIXGND
LOG
EXPANDER
RSSI
EXIN
OSCILATOR
11.15MHz
Scrambler frequency
LOIN
RECO2
DIVI
Switched Cap.
Divider.
RECOUT
LOEXT
RECO1
RXDAT
NC
D/A
FSK
MODEM
VBAT
TXDAT
MIC1
BATD
Battery low
Scrambler frequency
MIC
MIC2
MICO
detector
C
D
INTBUS
Serial
TGAIN
LPF
LPF
ADJ.2
TGAIN
ADJ.1
Bus
COMPRESSOR
PFIL
COIN
LIMITER
Modem
GND
CTC
VCC TXO
12386
Figure 1.
TELEFUNKEN Semiconductors
1 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Pin Description
Pin
1
Symbol
TXO
Function
Transmit section analog output
2
CTC
Compressor time constant control
analog output
1
28
TXO
TXDAT
3
4
5
COIN
Compressor analog input
CTC
2
3
4
5
6
7
8
9
27 RXDAT
MICO Microphone amplifier output
MIC2
Non-inverting input of microphone
amplifier
26
D
COIN
MICO
6
MIC1
Inverting input of microphone
amplifier
25
C
7
8
9
GND
RXO
LF analog/ digital ground
24
DACO
MIC2
MIC1
Intermediate receive analog output
RECO2 Symmetrical output of receive
amplifier
23
22
VCC
10
RECO1 Symmetrical output of receive
amplifier
GND
RXO
LOIN
11
12
EXIN
ETC
Expander analog input
21
20
19
VBAT
LOEXT
Expander time constant control
analog output
RECO2
RECO1
EXIN
ETC
13
14
15
16
IFIN2
IFIN1
Symmetrical IF amplifier input
Symmetrical IF amplifier input
10
11
12
NC
MIXO Mixer output
MIXIN Mixer input
18
17
16
RECDC
MIXGND
MIXIN
17 MIXGND IF amplifier and mixer ground
18
RECDC Reference voltage generation for
FSK demodulator
19
20
21
22
NC
Not connected
13
14
IFIN2
IFIN1
LOEXT External LO input
VBAT Battery supply
15 MIXO
LOIN
Local oscillator input for TCO or
SC filter oscillator: 11.15 MHz
96 12 387
23
VCC
Supply voltage output for
peripherals and internal supply of
digital part
Figure 2. Pinning
24
25
26
27
28
DACO D/A comparator output
C
D
Clock input of serial bus
Data input of serial bus
RXDAT Receive data digital output
TXDAT Transmit data digital input
2 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Absolute Maximum Ratings
Parameters
Supply voltage
Symbol
Min.
Typ.
Max.
5.5
Unit
V
V , V
BAT CC
Junction temperature
Ambient temperature
Storage temperature
Power dissipation
Tj
+125
+75
+125
1
°C
°C
°C
W
T
amb
–25
–50
T
stg
PD
Current Consumption
Test conditions (unless otherwise specified): VBAT = VCC = 3.6 V, T
= +25°C
amb
ERX2 ELNA ERXHF ERX1 ERXO EEA EDEE ETX EPREE
0
0
0
0
0
0
0
0
0
Parameters
Operating voltage range
Inactive mode
Standby mode
RX waiting for RSSI
Test Conditions
Min.
3.1
Typ.
3.6
60
0.3
1.6
2.6
Max.
4.7
80
Unit
V
µA
mA
mA
mA
VBAT = 2.9 V (or smaller)
0.5
ERXHF = 1
ERXHF = ERX1 = 1
1
1.7
2.4
3.7
RX demodulating
MODEM-signal
Operating current, RX and TX
completely active
ERX2 = ELNA = ERXHF =
ERX1 = ERXO = EEA = EDEE =
GDEM = ETX = 1
7.0
11.5
mA
TELEFUNKEN Semiconductors
3 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Receiver
IF Mixer
Electrical Characteristics
Test conditions (unless otherwise specified) VBAT = 3.6 V, ERXHF = 1, T = 25°C, FMIXIN = 10.7 MHz,
amb
FMIXO = 450 kHz
Parameters
Input resistance
Input capacitance
Test Conditions
Pin MIXIN
Pin MIXIN
Min.
2000
Typ.
3000
3
Max.
4000
Unit
pF
Fig.
Output impedance
Voltage gain GVMIX
Pin MIXO
Input level 7 mV
1200
13
1500
15
1800
17
dB
dBm
dBm
RMS
Input compression point
Third order input intercept point
–17
–9
3
Carrier breakthrough from internal
LO (11.15 MHz) to IF output
Carrier breakthrough from internal
LO (11.15 MHz) to RF input
300
10
µVrms
µV
Input frequency range
Output frequency
10
60
MHz
kHz
450
RF-Generator
MIXO
MIXIN
16
15
1.5 k
100 nF
50
10 nF
FIF1
11.15 MHz
96 11780
Figure 3. Test circuit
4 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
IF Amplifier: RSSI
Parameters
Input resistance
RSSI-sensitivity
Test Conditions
VIF = 0 µVrms
Min.
1.6
Typ.
2
Max.
2.5
Unit
k
Fig.
starting from 0 increase RSSI-
level until mean of sampled
signal at DACO is < 0.2
RSSI-level = CON0
VIF = 6 µVrms, F = 450 kHz
increase RSSI-level again until
mean of sampled signal at
DACO is < 0.2.
4
4
RSSI-level = CON1
RSSI-sensitivity = CON1-CON0
RSSI input voltage dynamic
range
RSSI-level number of step
RSSI level step-size in the
logarithmic region
65
dB
dB
127
0.46
RSSI Level Programming (Typical Values)
Input Voltage VIF (µVrms)
RSSI-Level (Decimal)
0
6
10
100
1000
10000
8
15
23
67
114
D
C
26
25
IFIN2
IFIN1
Setup
13
14
RSSI–level programming
100 nF
VIF
100 nF
DACO 24
RSSI–level information
96 11781
Figure 4.
TELEFUNKEN Semiconductors
5 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
RF Demodulator
IF = 450 kHz, FMOD = 1 kHz, input level = 500 µVrms
BSCR EDEE GRX0 GRX1 GRX2 GRX3 ERX1 ERXO
1
0
1
1
1
0
1
1
Parameters
Recovered audio
Test Conditions
GDEM = 0, dFM = 2.5 kHz
GDEM = 1, dFM = 5 kHz
Min.
0.4
Typ.
0.8
Max.
1.6
Unit
Vpp
Fig.
5
Recovered audio output
voltage drop
AM rejection ratio
VBAT = 4.7 to 3.1 V
–3
0
dB
dB
30% AM
35
RX Audio
dFM = 1 kHz, GDEM = 0
Parameters
Change of RX0 signal
deemphasis bypass
Test Conditions
EDEE = 0; 1
FM0D = 1 kHz
Min.
–0.5
Typ.
0
Max.
0.5
Unit
dB
Fig.
RX gain adjust range
RX gain adjust step
Output signal versus
frequency relative to 1 kHz
(0 dB) de-emphasis bypassed DRXGF (1800 Hz)
DRXGF (3400 Hz)
15
1
–7
–1.2
–0.4
0.2
–60
–0.6
4.2
–4.7
–9.5
–60
dB
dB
0.8
–8
1.2
DRXGF (100 Hz)
DRXGF (300 Hz)
–6
–0.2
0.6
1.2
–55
0.4
5.2
–3.7
–8.5
–55
–2.2
–1.4
–0.8
–80
–1.6
3.2
–5.7
–10.5
–80
dB
dB
DRXGF (4350 Hz)
Output signal versus
frequency relative to 1 kHz
(0 dB) de-emphasis enable
EDEE = 1
DFIL (100 Hz)
DFIL (300 Hz)
DFIL (1800 Hz)
DFIL (3400 Hz)
DFIL (4350 Hz)
5
RX total harmonic distortion dFM = 250 Hz
dFM = 2.50 kHz
2.5
2.5
%
RX audio mute
dFM = 2.5 kHz
ERX0 = 0
65
dB
ERX1 = 0
ERX2 = 0
RX output impedance
100
6 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
IFIN2
IFIN1
13
14
470 nF
8
100 nF
VIF
12.5 k
100 nF
12405
Figure 5.
Expander
EEA GEA0 GEA1 GEA2 GEA3 GEA4
1
0
0
0
1
1
Parameters
Gain reference level
G0REC
Test Conditions
VEXIN = –10 dBVrms
Min.
11
Typ.
13
Max.
15
Unit
dB
Fig.
Change of gain when expander
is bypassed (relative to G0REC)
BCOMP = 1
–0.5
0.5
dB
Gain tracking (relative to
G0REC)
VEXIN = –20 dBV
VEXIN = –30 dBV
VEXIN = –35 dBV
VEXIN = –40 dBV
–21
–41
–53
–19
–39
–47
dB
–50
–60
Input impedance
Change of gain due to change of Supply voltage between
9.5
–0.5
14.5
0.5
k
dB
6
supply voltage
3.2 and 5.2 V
Attack time
VEXIN = step
–20 dBVrms –14 dBVrms,
measure time after step, when
output voltage has 0.75 times
the final value
16
16
ms
ms
Release time
VEXIN = step
14 dBVrms –20 dBVrms,
measure time after step, when
output voltage has 1.5 times
of final value
TELEFUNKEN Semiconductors
7 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Earpiece Amplifier
BCOMP = 1, EEA = 1, VEXIN = 100 mVrms
Parameters
Maximum gain
Test Conditions
GEA0 GEA1 GEA2 GEA3
Min.
19
Typ.
20
Max.
21
Unit
dB
Fig.
1
1
1
1
GEA4 = 1
Medium gain
GEA0 GEA1 GEA2 GEA3
4
5
6
dB
dB
dB
0
0
0
0
GEA4 = 1
GEA0 GEA1 GEA2 GEA3
Minimum gain
–12
–0.2
–11
–10
0.2
0
0
0
0
GEA4 = 0
Supply voltage varies between
3.2 and 4.7 V
6
Change of gain due to change
of supply voltage
Gain adjust range
Gain adjust step
Output impedance
Total harmonic distortion
Output offset
31
1
10
dB
dB
0.8
1.2
30
1
%
mV
Vpp
VEXIN = 0 mV
Increase VEXIN until THD at
output (RECO1/ RECO2) is 5%
–200
4.8
200
RMS
Output voltage swing
5.0
RECO2
9
26
25
D
C
1kOhm
Setup
10
11
RECO1
EXIN
ETC
100 nF
12
VEXIN
470 nF
96 11783
Figure 6.
8 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
LF Transmitter
GMIC EPREE BXCR G1TX G2TX BCOMP ETX
1
1
1
1000 1000
1
1
Microphone Amplifier
VMIC = 10 mVrms, FIN = 1 kHz
Parameters
Gain
Test Conditions
Min.
Typ.
Max.
Unit
dB
Fig.
High gain: GMIC = 1
Low gain: GMIC = 0
31
23
32
24
33
25
Change of gain due to
change of supply voltage
Supply voltage varies between
3.2 and 4.7 V
–0.2
0
0.2
dB
k
Differential input impedance
Output impedance
41
75
10
103
35
1
8
Total harmonic distortion
Output noise
VMIC = 10 mV
%
RMS
VMIC = 0 V
high gain
50
µVrmsp
RMS
(inputs closed across 200
output voltage psophmet-
rically weighted
)
100 nF
4
5
MICO
MIC2
26
25
D
C
20 k
Setup
100
100
VMIC
6
MIC1
96 11784
Figure 7.
TELEFUNKEN Semiconductors
9 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
TX Audio
VCOIN = –20 dBVrms
Parameters
Change of gain TXO
Test Conditions
EPREE = 0
Min.
–0.5
–1
Typ.
0
0
15
1
15
1
Max.
0.5
–1
Unit
dB
dB
dB
dB
dB
dB
Fig.
Gain between 3.2 and 4.7 V
TX gain adjust range adj. 1
TX gain adjust step adj. 1
LIM gain adjust range adj. 2
LIM gain adjust range adj.2
0.8
1.2
0.8
1.2
TX gain versus frequency
(pre-emphasis bypassed)
relative to 1 kHz reference
level 0 dB
DTXGT (100 Hz)
DTXGT (300 Hz)
DTXGT (1800 Hz)
DTXGT (3400 Hz)
DTXGT (4350 Hz)
–1.3
–1.2
–0.8
–1.1
–20
–7.5
–6.5
3.3
–0.3
–0.2
0.2
–0.1
–24
–6.5
–5.5
4.3
0.7
0.8
1.2
0.7
–28
–5.5
–4.5
5.3
dB
dB
6
Gain versus frequency with PFIL (100 Hz)
preemphasis relative to
1 kHz reference level 0 dB
PFIL (300 Hz)
PFIL (1800 Hz)
PFIL (3400 Hz)
PFIL (4350 Hz)
6.9
–15
7.9
–14
8.9
–13
Total band ripple
TX gain
VBAT = 3.6 V and 5.2 V
VCOIN = –20 dBV
GTX (TXO, COIN)
2
%
5.5
dB
Limiter
Parameters
TX limiter level
Test conditions
Increase VCOIN until THD at
TX0 = 5% then measure VTX0
Min.
1.2
Typ.
1.68
Max.
2.3
Unit
Vpp
TX audio mute
ETX = 0, VCOIN = –10 dBV
attenuation at TX0 output
65
7
dB
k
TX output impedance
10
14
10 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Compander / Compressor
BSCR EPREE G2TX0 G2TX1 G2TX2 G2TX3 ETX G1TX0 G1TX1 G1TX2 G1TX3
1
0
0
1
0
1
1
0
0
1
0
Parameters
TX input impedance COIN BCOMP = 1
Test conditions
Min.
9
Typ.
14
Max.
22
Unit
k
Fig.
Gain reference level G0TX VCOIN = –10 dBVrms
1
0,5
5.5
10
0.5
dB
dB
Change of gain when
compresser is bypassed
(relative to G0TX)
VCOIN = –10 dBVrms
BCOMP = 1
Gain tracking
(relative to G0TX)
VCOIN = –30 dBVrms
VCOIN = –50 dBVrms
VCOIN = –60 dBVrms
VCOIN = –70 dBVrms
–11
–21
–22
–9
–19
–28
–30
3.5
8
Attack time
Release time
VCOIN = step
–30 dBVrms –18 dBVrms
measure time after step when
output voltage has 1.5 times the
final value
ms
ms
VCOIN = step
14.4
–18 dBVrms
–30 dBVrms
measure time after step when
output voltage has 0.75 times the
final value
26
D
C
2
CTC
470 nF
Setup
25
1
TXO
100 nF
COIN
3
100 k
VCOIN
96 11785
Figure 8.
TELEFUNKEN Semiconductors
11 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Scrambler
EPREE
0
BSCR
0
BCOMP
1
Parameters
Test Conditions / Pins
Min.
Typ.
Max.
Unit
dB
Conversion gain versus
frequency FIN (1 kHz)
reference level 0 dB
FIN = 100 Hz, FOUT = 4255 Hz
FIN = 300 Hz, FOUT = 4055 Hz
FIN = 700 Hz, FOUT = 3655 Hz
FIN = 1800 Hz, FOUT = 2555 Hz
FIN = 2600 Hz, FOUT = 1755 Hz
FIN = 3400 Hz, FOUT = 955 Hz
FIN = 3600 Hz, FOUT = 755 Hz
FIN = 1000 Hz, FOUT = 3355 Hz
Measure FOUT = 4355 Hz
–4.5
–2.3
–0.9
–1.1
–1.1
–2.5
–4.9
–1
–3.5
–1.3
0.1
–0.1
–0.1
–1.5
–3.9
0
–2.5
–0.3
1.1
0.9
0.9
–0.5
–2.8
1
Carrier break through
10
mV
RMS
Descrambler
EDEE BSCR
BCOMP
0
0
1
Parameters
Conversion gain
Versus frequency
Test Conditions / Pins
Min.
Typ.
Max.
Unit
dB
FIN = 4255 Hz, FOUT = 100 Hz
FIN = 4055 Hz, FOUT = 300 Hz
FIN = 3655 Hz, FOUT = 700 Hz
FIN = 2555 Hz, FOUT = 1800 Hz
FIN = 1755 Hz, FOUT = 2600 Hz
FIN = 955 Hz, FOUT = 3400 Hz
FIN = 755 Hz, FOUT = 3600 Hz
FIN = 3355 Hz, FOUT = 1000 Hz
–3.8
–1.6
–0.5
–1.7
–0.7
–1.4
–1.7
–1
–2.6
–0.6
0.5
–0.7
6.3
–0.4
–0.7
0
–1.8
0.1
1.5
0.3
1.3
0.6
0.3
1
Carrier break through
Measure FOUT = 4355 kHz
0.3
mV
RMS
DATAS
F –3dB = 4.2 kHz
F –3dB = 3.55 kHz
Gain
Output buffer
Stage
Signal:
State:
Gain:
4.35 kHz / DC / OFF
SCRON / SCROFF / DATA
–4dB / 0 dB / OFF
1 kHz
SCRON / SCROFF
5.9 dB / 1.9 dB
DATAS
F –3dB = 3.55 kHz
F –3dB = 4.2 kHz
Gain
Deemphasis
Stage
1 kHz
Signal:
State:
Gain:
4.35 kHz / DC / OFF
DESCRON / DESCROFF / DATA
–4dB / 0 dB / OFF
DESCRON / DESCROFF
–0.5 dB / –4.5 dB
12406
Figure 9.
12 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
FSK Modem (1200 Bauds)
Parameters
FSK-demodulator
Input signal discriminator
IFIN1-IFIN2––––RXDAT
Test Conditions
IFIN = 450 kHz
VIFIN = 0.5
df = 2.4 kHz
ERX1 = 1
Min.
Typ.
Max.
Unit
mVRMS
2100 Hz ––– = 0
1300 Hz ––– = 1
FSK – modulator
TXDAT ––– TXO
Output signal level
TXDAT ––– TXOUT
GDEM = 0 (high gain)
GRX3 = 1 (+1dB)
ETX = 1
EFSK = 1
TXDAT = 0
1720
0.87
Hz
Hz
1660
1.54
1.54
Vpp
Vpp
TXOUT = 2100 Hz
TXDAT = 1
TXOUT = 1300 Hz
TXDAT = 0
Signal distortion
TXDAT ––– TXOUT
TXOUT = 2100 Hz
TXDAT = 1
TXOUT = 1300 Hz
2
2
%
%
Output signal frequency
TXDAT = 0
TXDAT = 1
2100
1300
Hz
Output signal
– Distortion
– Offset level
2
%
V
1.5
Signal level
BSCR = 1
BSCR = 0
0.93
1.4
1.12
1.61
1.35
2.1
Vpp
Vpp
Electrical Characteristic of Logical Part
Parameters
Inputs: C, D, TXDAT
Low voltage input
High voltage input
Input leakage current
(0 < VI < VCC)
Input LOIN
Input leakage current pin XCK
(0 < VI < VCC)
Test Conditions
Min.
Typ.
Max.
0.5
Unit
V
V
2.5
–1
1
5
A
A
–5
Outputs: DACO, RXDAT
Output low
lol = 4 µA
0.1*VCC
Output high
loh = –4 µA
0.9*VCC
Serial bus (figure?)
Data set-up time
Data hold time
Clock low time
Clock high time
Hold time before transfer condition
Data low pulse on transfer condition teh
Data high pulse on transfer condition teof
tsud
thd
tcl
tch
teon
0.1
0
2
sec
sec
sec
sec
sec
sec
sec
2
0.1
0.2
0.2
TELEFUNKEN Semiconductors
13 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Serial Bus Interface
The circuit is remoted by an external microcontroller
trough the serial bus.
The data is an 12 – bit word:
Data
D
C
B11 – B8: address of the destination register (0 to 15)
B7 – B0: contents of register
Micro-
Clock
processor
The data line must be stable when the clock is high and
data must be serially shifted.
96 11787
After 12 clock periods, the transfer to the destination reg-
ister is (internally) generated by a low to high transition
of the data line when the clock is high.
Figure 10.
Data
(D)
b1
b2
b9
b10
b0
b11
Clock
(C)
1st word
2nd word
Transfer condition
Word transmission
96 11788
Figure 11. Serial bus transmission
Data
Clock
8
4
0
Address
Decoder
128 latches
Commands
15
96 11789
Figure 12.
14 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Data
(D)
b11
b10
b9
b0
(C)
Clock
tcl
teon
teh
96 11790
tsud
thd
tch
teoff
Figure 13.
Content of Internal Registers
0: Reference for D/A Converter
DA0
DA1
DA2
DA3
DA4
DA5
DA6
MUXDA
GEA3
DA [0:6]:
MUXDA:
Refernce voltage D/A
D/A multiplexing
1: Gain adjustment RECLF
GRX0
GRX1
GRX2
GRX3
GEA0
G2TX0
ERXO
GEA1
G2TX1
EEA
GEA2
G2TX2
EDEE
GRX [0:3]: Gain adjustment RX
GEA [0:3]: Gain earpiece amplifier (see register 5)
2: Gain adjustment TRANLF
G1TX0
G1TX1
G1TX2
G1TX3
G2TX3
GDEM
G1TX [0:3]: Gain adjustment TX
G2TX [0:3]: Gain adjustment TX after limiter
3: Enable functions receive
ERX2
Free
ERXHF
ERX1
ERX [1:2]: Enable parts of RXLF
ERXHF:
ERXO:
EEA:
Enable RX mixer and IF-amplifier
Enable RXO output
Enable earpiece amplifier
EDEE:
GDEM:
Enable demphasis (disable simultaneus bypass)
Gain demodulator
TELEFUNKEN Semiconductors
15 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
4: Enable functions transmit
ETX
EPREE
EFSK
GMIC
BSCR
BCOMP
RBAT
SRSSI
ETX:
Enable TX low frequency part
EPREE:
EFSK:
GMIC:
BSCR:
BCOMP:
RBAT:
SRSSI:
Enable preemphasis (disable simultaneus bypass)
Enable modulator of FSK-modem
Gain of microphone preamplifier
Bypass scrambler/ descrambler
Bypass compressor expander
Battery detection high/ low range
RSSI sample hold
5:
EXTLO
GEA4
free
free
free
free
MTX
free
EXTLO:
GEA4:
MTX:
Select input MIXER2
Gain earpiece amplifier MSB (see register 1)
Mute transmit path
Example of Mode Setting Using Enable Bits and Battery Switch
(U3500B + U3550B)
Active Mode
(Transmission)
Active Mode
(PLL
Convergence
Waiting)
Receive Mode Receive Mode Standby Mode Inactive Mode
(Only Data)
(RX Waiting)
(ex: Battery
Low)
(Switch Off)
EEA
ETX, ERX2, ERXO
ERX1
X
X
X
X
X
X
X
X
X
ERXHF,
X
RSSI/Battery
Management
(MUXDA)
LOGIC PART
(Enabled when
VBAT > 3.2V)
X
X
X
X
X
X
X
X
X
X
Switch Comparator
(Always Enabled)
X
16 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Battery Management
Max batlow
Min batlow over switch
Max bathigh
Min bathigh
Adjust step
DA0 to 6 = 1, RBAT = 1
DA0 to 6 = 27 BIN, RBAT = 1
DA0 to 6 = 1, RBAT = 0
DA0 to 6 = 0, RBAT = 0
3.8
3.05
4.85
3.93
3.5
3.95
3.2
5.05
4.1
7.5
952.5
200
4.1
3.35
5.25
4.27
11.5
V
V
V
V
mV
mV
mV
(Max - Min)
(MINBL - SWOFF)
852.5
100
1052.5
300
Battery Switch
Characteristic
Off threshold
On threshold
Hysteresis
Switch ron
Test Conditions
DA0 to 6 = 1, RBAT = 1
DA0 to 6 = 27 BIN, RBAT = 1
Min.
2.9
3.15
220
Typ.
3.0
3.25
250
35
Max.
3.1
3.35
280
50
Unit
V
V
mV
DA0 to 6 = 0, RBAT = 0
Max batlow
Min batlow
Max bathigh
Min bathigh
Adjust step
(MAX - MIN)
:
:
:
:
:
:
MAXBL (battery voltage when all DAC bits are high, low range)
MINBL (battery voltage when DAC bits are 0011011, low range)
MAXBH (battery voltage when all DAC bits are high, high range)
MINBH (battery voltage when all DAC bits are low, high range)
Adjust step
MAXBH - MINBH
MINBL - SWOFF :
MINBL - SWOFF
OFF threshold
ON threshold
Hysteresis
:
:
:
:
SWOFF (off threshold of the battery switch)
SWON (on threshold of the battery switch)
SWON - SWOFF
Switch
Switch Ron (resistance of the switch transistor, when switch is “ON”)
TELEFUNKEN Semiconductors
17 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Application Circuit of CT1
U 2 7 8 2 B
D o u b l e P L L
T E R
D U P L E X F I L
18 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Dimensions in mm
Package SO28
95 9932
TELEFUNKEN Semiconductors
19 (20)
Rev. A1, 29-Jul-96
Preliminary Information
U3501BM
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
20 (20)
TELEFUNKEN Semiconductors
Rev. A1, 29-Jul-96
Preliminary Information
相关型号：
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