BZT55C12 [TEMIC]
Silicon Epitaxial Planar Z-Diodes; 硅外延平面的Z-二极管![BZT55C12](http://pdffile.icpdf.com/pdf1/p00080/img/icpdf/BZT55C_423780_icpdf.jpg)
型号: | BZT55C12 |
厂家: | ![]() |
描述: | Silicon Epitaxial Planar Z-Diodes |
文件: | 总6页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BZT55C...
TELEFUNKEN Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
Applications
94 9373
Voltage stabilization
Absolute Maximum Ratings
T = 25_C
j
Parameter
Test Conditions
x300K/W
Type
Symbol
Value
500
Unit
mW
mA
°C
Power dissipation
R
P
thJA
V
Z
Z–current
I
P /V
V
Z
Junction temperature
Storage temperature range
T
175
j
T
stg
–65...+175
°C
Maximum Thermal Resistance
T = 25_C
j
Parameter
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
Value
500
Unit
K/W
Junction ambient
R
thJA
Characteristics
T = 25_C
j
Parameter
Test Conditions
I =200mA
Type
Symbol
Min
Typ
Max
1.5
Unit
V
Forward voltage
V
F
F
Rev. A1: 12.12.1994
1
BZT55C...
TELEFUNKEN Semiconductors
1)
2)
Type
BZT55C...
2 V 4
2 V 7
3 V 0
3 V 3
3 V 6
3 V 9
4 V 3
4 V 7
5 V 1
5 V 6
6 V 2
6 V 8
7 V 5
8 V 2
9 V 1
10
V
I
for
V
and r
r
at I
I
and I
at V
TK
VZ
Znorm
ZT
ZT
zjT
zjk
ZK
R
R
R
V
mA
5
V
W
W
mA
1
mA
< 100
< 10
< 4
mA
< 50
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
V
%/K
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.28 to 2.56 < 85
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
1
1
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
5
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
5.2 to 6.0
5.8 to 6.6
6.4 to 7.2
7.0 to 7.9
7.7 to 8.7
8.5 to 9.6
9.4 to 10.6
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
1
5
1
1
5
1
< 2
1
5
1
< 2
1
5
1
< 2
1
5
1
< 1
1
5
1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
1
5
1
1
5
1
< 2
1
5
1
< 2
2
5
1
< 2
3
5
< 7
1
< 2
5
5
< 7
< 50
1
< 2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
5
< 10
< 15
< 50
1
< 2
5
< 70
1
< 2
11
11
5
10.4 to 11.6 < 20
11.4 to 12.7 < 20
12.4 to 14.1 < 26
13.8 to 15.6 < 30
15.3 to 17.1 < 40
16.8 to 19.1 < 50
18.8 to 21.2 < 55
20.8 to 23.3 < 55
22.8 to 25.6 < 80
25.1 to 28.9 < 80
< 70
1
< 2
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
12
12
5
< 90
1
< 2
13
13
5
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
1
< 2
15
15
5
1
< 2
16
16
5
1
< 2
18
18
5
1
< 2
20
20
5
1
< 2
22
22
5
1
< 2
24
24
5
1
< 2
27
27
5
1
< 2
30
30
5
28 to 32
31 to 35
34 to 38
37 to 41
40 to 46
44 to 50
48 to 54
52 to 60
58 to 66
64 to 72
70 to 79
< 80
< 80
< 80
< 90
< 90
1
< 2
33
33
5
1
< 2
36
36
5
1
< 2
39
39
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
< 5
43
43
0.5
0.5
0.5
< 5
47
47
< 110 < 700
< 125 < 700
< 5
51
51
< 10
< 10
< 10
< 10
< 10
56
56
< 135 < 1000 0.5
< 150 < 1000 0.5
< 200 < 1000 0.5
< 250 < 1500 0.5
2)
62
62
68
68
75
75
1)
t /T ≤ 100 ms, tighter tolerances available on request.
at T = 150°C
j
p
Rev. A1: 12.12.1994
2
BZT55C...
TELEFUNKEN Semiconductors
Typical Characteristics (Tj = 25_C unless otherwise specified)
600
500
400
300
200
100
0
1000
100
10
T =25°C
j
I =5mA
Z
1
200
25
0
40
80
120
160
0
5
10
15
20
95 9602
T
– Ambient Temperature ( °C )
95 9598
V – Z-Voltage ( V )
Figure 2 : Typical Change of Working Voltage under Operating
Figure 1 : Total Power Dissipation vs. Ambient Temperature
Conditions at T
amb
=25°C
1.3
15
10
5
V
=V /V (25°C)
Zt Z
Ztn
1.2
1.1
–4
TK =10 10 /K
VZ
–4
8 10 /K
–4
6 10 /K
–4
4 10 /K
–4
2 10 /K
0
1.0
0.9
0.8
–4
I =5mA
Z
–2 10 /K
–4
–4 10 /K
0
–5
240
50
–60
0
60
120
180
0
10
20
30
40
95 9599
T – Junction Temperature ( °C )
j
95 9600
V – Z-Voltage ( V )
Z
Figure 3 : Typical Change of Working Voltage vs. Junction
Temperature
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
200
150
100
10
V =2V
R
T =25°C
j
1
T =25°C
j
100
50
0
0.1
0.01
0.001
25
1.0
0
5
10
V – Z-Voltage ( V )
Z
15
20
0
0.2
0.4
V – Forward Voltage ( V )
F
0.6
0.8
95 9601
95 9605
Figure 5 : Diode Capacitance vs. Z–Voltage
Figure 6 : Forward Current vs. Forward Voltage
Rev. A1: 12.12.1994
3
BZT55C...
TELEFUNKEN Semiconductors
100
50
40
30
P
tot
=500mW
80
T
amb
=25°C
P
T
=500mW
tot
=25°C
amb
60
40
20
0
20
10
0
20
35
0
4
8
12
16
15
20
25
V – Z-Voltage ( V )
Z
30
95 9604
V
– Z-Voltage ( V )
95 9607
Z
Figure 8 : Z–Current vs. Z–Voltage
Figure 7 : Z–Current vs. Z–Voltage
1000
I =1mA
Z
100
10
1
5mA
10mA
T =25°C
j
25
0
5
10
15
20
95 9606
V – Z-Voltage ( V )
Z
Figure 9 : Differential Z–Resistance vs. Z–Voltage
1000
t /T=0.5
p
100
10
1
t /T=0.2
p
Single Pulse
R
DT=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
i =(–V +(V +4r ꢀDT/Z
ZM
)
)/(2r )
zj
p
Z
Z
zj
thp
–1
0
1
2
10
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 10 : Thermal Response
Rev. A1: 12.12.1994
4
BZT55C...
TELEFUNKEN Semiconductors
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications
94 9372
0.35
0.30
0.35
0.30
V 1.5
1.3
Quadro MELF
Glass Case similar to
JEDEC DO 213 AA
3.7
3.3
Rev. A1: 12.12.1994
5
BZT55C...
TELEFUNKEN Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements and
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on the
environment.
Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) will soon severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous
improvements to eliminate the use of any ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection
Agency (EPA) in the USA and
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances.
We reserve the right to make changes to improve technical design without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,
the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax Number: 49 (0)7131 67 2423
Rev. A1: 12.12.1994
6
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