BZT55C13 [VISHAY]
Silicon Epitaxial Planar Z-Diodes; 硅外延平面的Z-二极管![BZT55C13](http://pdffile.icpdf.com/pdf1/p00080/img/icpdf/BZT55C_423779_icpdf.jpg)
型号: | BZT55C13 |
厂家: | ![]() |
描述: | Silicon Epitaxial Planar Z-Diodes |
文件: | 总6页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BZT55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
96 12009
Applications
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
300K/W
Type
Symbol
Value
500
Unit
mW
mA
C
P
V
R
thJA
I
Z
P /V
V
Z
T
175
–65...+175
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Test Conditions
Symbol
R
thJA
Value
500
Unit
K/W
Junction ambient on PC board 50mmx50mmx1.6mm
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
1.5
V
F
V
F
Document Number 85601
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BZT55C...
Vishay Telefunken
Type
BZT55C...
2 V 4
2 V 7
3 V 0
3 V 3
3 V 6
3 V 9
4 V 3
4 V 7
5 V 1
5 V 6
6 V 2
6 V 8
7 V 5
8 V 2
9 V 1
10
V
I
for
V
V
and r
r
at I
I
and I at
V
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TK
VZ
%/K
Znom
ZT
ZT
1)
zjT
zjk
ZK
R
R
R
2)
V
mA
5
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A
A
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
2.28 to 2.56 < 85
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 10
< 4
< 2
< 2
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 5
< 5
< 5
< 10
< 10
< 10
< 10
< 10
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
5.2 to 6.0
5.8 to 6.6
6.4 to 7.2
7.0 to 7.9
7.7 to 8.7
8.5 to 9.6
9.4 to 10.6
10.4 to 11.6 < 20
11.4 to 12.7 < 20
12.4 to 14.1 < 26
13.8 to 15.6 < 30
15.3 to 17.1 < 40
16.8 to 19.1 < 50
18.8 to 21.2 < 55
20.8 to 23.3 < 55
22.8 to 25.6 < 80
25.1 to 28.9 < 80
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
< 2
< 1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 7
< 7
< 10
< 15
< 50
< 50
< 70
< 70
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
28 to 32
31 to 35
34 to 38
37 to 41
40 to 46
44 to 50
48 to 54
52 to 60
58 to 66
64 to 72
70 to 79
< 80
< 80
< 80
< 90
< 90
1
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
< 110 < 700
< 125 < 700
< 135 < 1000 0.5
< 150 < 1000 0.5
< 200 < 1000 0.5
< 250 < 1500 0.5
51
56
62
68
75
1)
t /T
p
100ms,
tighter tolerances available on request:
BZT55A... ± 1% of V
BZT55B... ± 2% of V
Znom
Znom
Znom
BZT55F... ± 3% of V
2)
at T = 150 C
j
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2 (6)
Document Number 85601
Rev. 3, 01-Apr-99
BZT55C...
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
600
500
400
300
200
100
0
1.3
1.2
1.1
V
=V /V (25°C)
Zt Z
Ztn
–4
TK =10 10 /K
VZ
–4
8
6
10 /K
–4
10 /K
–4
4
2
10 /K
–4
10 /K
0
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
200
240
0
40
80
120
160
–60
0
60
120
180
95 9602
T
amb
– Ambient Temperature ( °C )
95 9599
T – Junction Temperature ( °C )
j
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
1000
100
10
15
10
5
T =25°C
j
I =5mA
Z
I =5mA
Z
0
1
–5
25
50
0
5
10
15
20
0
10
20
30
40
95 9598
V
– Z-Voltage ( V )
95 9600
V – Z-Voltage ( V )
Z
Z
Figure 2. Typical Change of Working Voltage under Oper-
ating Conditions at T =25 C
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
amb
200
150
V =2V
R
T =25°C
j
100
50
0
25
0
5
10
V – Z-Voltage ( V )
Z
15
20
95 9601
Figure 5. Diode Capacitance vs. Z–Voltage
Document Number 85601
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
3 (6)
BZT55C...
Vishay Telefunken
100
10
50
40
30
P
T
=500mW
tot
=25°C
amb
T =25°C
j
1
0.1
0.01
20
10
0
0.001
1.0
35
0
0.2
0.4
0.6
0.8
15
20
25
V – Z-Voltage ( V )
Z
30
95 9605
V
– Forward Voltage ( V )
95 9607
F
Figure 6. Forward Current vs. Forward Voltage
Figure 8. Z–Current vs. Z–Voltage
100
1000
100
10
80
I =1mA
Z
P
T
=500mW
tot
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
95 9604
V
– Z-Voltage ( V )
95 9606
V – Z-Voltage ( V )
Z
Z
Figure 7. Z–Current vs. Z–Voltage
Figure 9. Differential Z–Resistance vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r
T/Z
)
)/(2r )
ZM
Z
Z
zj
thp
zj
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 10. Thermal Response
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4 (6)
Document Number 85601
Rev. 3, 01-Apr-99
BZT55C...
Vishay Telefunken
Dimensions in mm
96 12071
Document Number 85601
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
5 (6)
BZT55C...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6)
Document Number 85601
Rev. 3, 01-Apr-99
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