BZT55C13_技术文档

BZT55C...

TELEFUNKEN Semiconductors

Silicon Epitaxial Planar Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Very high stability

D Low noise

D Available with tighter tolerances

Applications

94 9373

Voltage stabilization

Absolute Maximum Ratings

T = 25_C

j

Parameter

Test Conditions

x300K/W

Type

Symbol

Value

500

Unit

mW

mA

°C

Power dissipation

R

P

thJA

V

Z

Z–current

I

P /V

V

Z

Junction temperature

Storage temperature range

T

175

j

T

stg

–65...+175

°C

Maximum Thermal Resistance

T = 25_C

j

Parameter

Test Conditions

on PC board 50mmx50mmx1.6mm

Symbol

Value

500

Unit

K/W

Junction ambient

R

thJA

Characteristics

T = 25_C

j

Parameter

Test Conditions

I =200mA

Type

Symbol

Min

Typ

Max

1.5

Unit

V

Forward voltage

V

F

Rev. A1: 12.12.1994

1

BZT55C...

TELEFUNKEN Semiconductors

1)

2)

Type

BZT55C...

2 V 4

2 V 7

3 V 0

3 V 3

3 V 6

3 V 9

4 V 3

4 V 7

5 V 1

5 V 6

6 V 2

6 V 8

7 V 5

8 V 2

9 V 1

10

V

I

for

V

and r

r

at I

I

and I

at V

TK

VZ

Znorm

ZT

zjT

zjk

ZK

R

V

mA

5

V

W

mA

1

mA

< 100

< 10

< 4

mA

< 50

< 40

< 20

< 10

< 2

V

%/K

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

2.28 to 2.56 < 85

< 600

< 550

< 450

< 200

< 150

< 50

1

–0.09 to –0.06

–0.08 to –0.05

–0.06 to –0.03

–0.05 to +0.02

–0.02 to +0.02

–0.05 to +0,05

0.03 to 0.06

0.03 to 0.07

0.03 to 0.08

0.03 to 0.09

0.03 to 0.1

5

2.5 to 2.9

2.8 to 3.2

3.1 to 3.5

3.4 to 3.8

3.7 to 4.1

4.0 to 4.6

4.4 to 5.0

4.8 to 5.4

5.2 to 6.0

5.8 to 6.6

6.4 to 7.2

7.0 to 7.9

7.7 to 8.7

8.5 to 9.6

9.4 to 10.6

< 85

< 90

< 80

< 60

< 40

< 10

< 8

1

5

1

5

1

< 2

1

5

1

< 2

1

5

1

< 2

1

5

1

< 1

1

5

1

< 0.5

< 0.1

1

5

1

5

1

< 2

1

5

1

< 2

2

5

1

< 2

3

5

< 7

1

< 2

5

< 7

< 50

1

< 2

6.2

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

5

< 10

< 15

< 50

1

< 2

5

< 70

1

< 2

11

5

10.4 to 11.6 < 20

11.4 to 12.7 < 20

12.4 to 14.1 < 26

13.8 to 15.6 < 30

15.3 to 17.1 < 40

16.8 to 19.1 < 50

18.8 to 21.2 < 55

20.8 to 23.3 < 55

22.8 to 25.6 < 80

25.1 to 28.9 < 80

< 70

1

< 2

0.03 to 0.11

0.04 to 0.12

12

5

< 90

1

< 2

13

5

< 110

< 170

< 220

< 500

< 600

1

< 2

15

5

1

< 2

16

5

1

< 2

18

5

1

< 2

20

5

1

< 2

22

5

1

< 2

24

5

1

< 2

27

5

1

< 2

30

5

28 to 32

31 to 35

34 to 38

37 to 41

40 to 46

44 to 50

48 to 54

52 to 60

58 to 66

64 to 72

70 to 79

< 80

< 90

1

< 2

33

5

1

< 2

36

5

1

< 2

39

2.5

1

< 5

43

0.5

< 5

47

< 110 < 700

< 125 < 700

< 5

51

< 10

56

< 135 < 1000 0.5

< 150 < 1000 0.5

< 200 < 1000 0.5

< 250 < 1500 0.5

2)

62

68

75

1)

t /T ≤ 100 ms, tighter tolerances available on request.

at T = 150°C

j

p

Rev. A1: 12.12.1994

2

BZT55C...

TELEFUNKEN Semiconductors

Typical Characteristics (T_j= 25_C unless otherwise specified)

600

500

400

300

200

100

0

1000

100

10

T =25°C

j

I =5mA

Z

1

200

25

0

40

80

120

160

0

5

10

15

20

95 9602

T

amb

– Ambient Temperature ( °C )

95 9598

V – Z-Voltage ( V )

Z

Figure 2 : Typical Change of Working Voltage under Operating

Figure 1 : Total Power Dissipation vs. Ambient Temperature

Conditions at T

amb

=25°C

1.3

15

10

5

V

=V /V (25°C)

Zt Z

Ztn

1.2

1.1

–4

TK =10 10 /K

VZ

–4

8 10 /K

–4

6 10 /K

–4

4 10 /K

–4

2 10 /K

0

1.0

0.9

0.8

–4

I =5mA

Z

–2 10 /K

–4

–4 10 /K

0

–5

240

50

–60

0

60

120

180

0

10

20

30

40

95 9599

T – Junction Temperature ( °C )

j

95 9600

V – Z-Voltage ( V )

Z

Figure 3 : Typical Change of Working Voltage vs. Junction

Temperature

Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage

200

150

100

10

V =2V

R

T =25°C

j

1

T =25°C

j

100

50

0

0.1

0.01

0.001

25

1.0

0

5

10

V – Z-Voltage ( V )

Z

15

20

0

0.2

0.4

V – Forward Voltage ( V )

F

0.6

0.8

95 9601

95 9605

Figure 5 : Diode Capacitance vs. Z–Voltage

Figure 6 : Forward Current vs. Forward Voltage

Rev. A1: 12.12.1994

3

BZT55C...

TELEFUNKEN Semiconductors

100

50

40

30

P

tot

=500mW

80

T

amb

=25°C

P

T

=500mW

tot

=25°C

amb

60

40

20

0

20

10

0

20

35

0

4

8

12

16

15

20

25

V – Z-Voltage ( V )

Z

30

95 9604

V

– Z-Voltage ( V )

95 9607

Z

Figure 8 : Z–Current vs. Z–Voltage

Figure 7 : Z–Current vs. Z–Voltage

1000

I =1mA

Z

100

10

1

5mA

10mA

T =25°C

j

25

0

5

10

15

20

95 9606

V – Z-Voltage ( V )

Z

Figure 9 : Differential Z–Resistance vs. Z–Voltage

1000

t /T=0.5

p

100

10

1

t /T=0.2

p

Single Pulse

R

DT=T

=300K/W

–T

jmax amb

thJA

t /T=0.01

p

t /T=0.1

p

t /T=0.02

p

2

1/2

t /T=0.05

i =(–V +(V +4r ꢀDT/Z

ZM

)

)/(2r )

zj

p

Z

zj

thp

–1

0

1

2

10

t – Pulse Length ( ms )

10

95 9603

p

Figure 10 : Thermal Response

Rev. A1: 12.12.1994

4

BZT55C...

TELEFUNKEN Semiconductors

Dimensions in mm

Cathode Identification

technical drawings

according to DIN

specifications

94 9372

0.35

0.30

0.35

0.30

V 1.5

1.3

Quadro MELF

Glass Case similar to

JEDEC DO 213 AA

3.7

3.3

Rev. A1: 12.12.1994

5

BZT55C...

TELEFUNKEN Semiconductors

OZONE DEPLETING SUBSTANCES POLICY STATEMENT

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements and

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on the

environment.

Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known

as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) will soon severely restrict the use of ODSs and forbid

their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these

substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous

improvements to eliminate the use of any ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection

Agency (EPA) in the USA and

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances.

We reserve the right to make changes to improve technical design without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,

the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax Number: 49 (0)7131 67 2423

Rev. A1: 12.12.1994

6


型号：	BZT55C13
厂家：	TEMIC SEMICONDUCTORS
描述：	Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z-二极管二极管齐纳二极管测试
文件：	总6页 (文件大小：82K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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