US1AF [SUNMATE]
1.0A patch fast recovery diode 50V SMAF series;
| 型号： | US1AF |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1.0A patch fast recovery diode 50V SMAF series |
| 文件： | 总2页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1AF - US1MF
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
!
!
!
Glass Passivated Die Construction
Diffused Junction
Ultra-Fast Recovery Time for High Efficiency
Low Forward Voltage Drop, High Current
Capability, and Low Power Loss
Ideally Suited for Automated Assembly
!
!
B
C
E
Mechanical Data
!
!
Case: SMAF,Molded Plastic
SMAF
Dim Min Max Typ
Terminals: Solder Plated, Solderable
D
A
B
C
D
E
H
L
4.75 4.85
3.68 3.72
4.80
3.70
2.60
1.00
per MIL-STD-750, Method 2026
Polarity:Color band denotes cathode end
Mounting Position:Any
H
2.57
2.63
!
!
!
L
0.097 1.03
1.38 1.42 1.40
0.13 0.17 0.15
0.63 0.67 0.65
Weight:0.0018 ounce, 0.064 grams
E
All Dimensions in mm
A
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol US1AF US1BF US1DF US1GF US1JF US1KF US1MF Unit
VRRM
VRWM
VR
VR(RMS)
IO
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
280
1.0
V
A
Average Rectified Output Current
@ TT = 75ꢀC
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
30
A
Forward Voltage Drop
@ IF = 1.0A
VFM
IRM
1.0
1.3
1.7
V
5.0
100
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA = 25ꢀC
@ TA = 100ꢀC
ꢁA
trr
Cj
Reverse Recovery Time (Note 2)
50
20
75
10
ns
pF
Typical Junction Capacitance (Note 1)
RꢂJT
Tj, TSTG
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
30
ꢀC/W
ꢀC
-65 to +150
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A.
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10
1.0
1.0
US1AF - US1DF
US1GF
US1JF - US1MF
0.5
0.1
Tj - 25°C
Pulse Width = 300µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
TT, TERMINAL TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
40
30
1000
Single Half Sine-Wave
(JEDEC Method)
100
Tj = 100°C
10
20
10
0
1.0
Tj = 25°C
0.1
Tj = 150°C
0.01
0
20
40
60
80
100 120 140
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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