US1AF-US1MF [HDSEMI]
S MAF Plastic-Encapsulate Diodes;
| 型号： | US1AF-US1MF |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | S MAF Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1AF THRU US1MF
HD AF46
SMAF Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●I
1A
50V-1000V
●High surge current capability
o
SMAF
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● US1AF-US1MF : US1A-US1M
US
1AF 1BF 1DF 1FF 1GF 1JF 1KF 1MF
Item
Symbol Unit
Conditions
Repetitive Peak Reverse Voltage VRRM
V
50
100 200 300 400 600 800 1000
35
70 140 210 280 420 560 700
V
V
RMS
Maximum RMS Voltage
60Hz Half-sine wave, Resistance
load, TL=115℃
Average Forward Current
IF(AV)
A
A
1.0
30
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave,1 cycle,
Ta=25℃
IFSM
Junction Temperature
Storage Temperature
TJ
℃
℃
-55 ~ +150
-55 ~ +150
TSTG
Electrical Characteristics (T =25℃ Unless otherwise specified)
a
US
Item
Symbol
Unit
V
Test Condition
1AF 1BF 1DF 1FF 1GF 1JF 1KF 1MF
1A 1B 1D 1F 1G 1J 1K 1M
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
VFM
IFM=1.0A
1.0
1.3
1.7
IRRM1
IRRM2
T =25℃
5
a
μA
VRM=VRRM
T =125℃
a
100
IF=0.5A IR=1A
IRR=0.25A
trr
ns
50
75
751)
271)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
1.0
0.8
0.6
0.4
0.2
0
35
30
25
20
15
10
5
8.3ms Single Half Sine Wave
JEDEC Method
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
25
50
75
100
125
150
TL(℃)
0
1
2
10
20
100
Number of Cycles
FIG.4：TYPICAL REVERSE CHARACTERISTICS
FIG.3: TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
100
100
Pulse width=300us
1% Duty Cycle
US1AF-DF
US1GF
Tj=150℃
10
10
Tj=100℃
1.0
0.1
0.01
1.0
0.1
0.01
US1JF-MF
Tj=25℃
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF(V)
0
20
40
60
80
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SMAF
.193(4.90)
.173(4.40)
.047(1.20)
.035(0.90)
.146(3.70)
.130(3.30)
.063(1.60)
.051(1.30)
.106(2.70)
.094(2.40)
.009(0.23)
.007(0.18)
.051(1.30)
.039(1.00)
Dimensions in inches and (millimeters)
SMAF
4.65
0.55
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices- SMAF
4
H
igh Diode Semiconductor
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