US1AHE3/61T [VISHAY]
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN;
| 型号： | US1AHE3/61T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN 光电二极管 |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1A, US1B, US1D, US1G, US1J, US1K, US1M
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Vishay General Semiconductor
Surface Mount Ultra Fast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pallet chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
Available
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMA (DO-214AC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
1.0 A
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
IFSM
trr
30 A
50 ns, 75 ns
1.0 V, 1.7 V
150 °C
MECHANICAL DATA
VF at IF
Case: SMA (DO-214AC)
TJ max.
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Package
Diode variations
SMA (DO-214AC)
Single
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
Device marking code
UA
50
35
50
UB
100
70
UD
200
140
200
UG
400
280
400
1.0
UJ
UK
800
560
800
UM
1000
700
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
600
420
600
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 110 °C
100
1000
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating and storage temperature range
TJ, TSTG
-55 to +150
°C
Revision: 21-Jul-17
Document Number: 88768
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
(1)
Maximum instantaneous forward voltage 1.0 A
VF
1.0
1.7
V
TA = 25 °C
TA = 100 °C
10
50
Maximum DC reverse current
at rated DC blocking voltage
IR
μA
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
Maximum reverse recovery time
Typical junction capacitance
trr
50
15
75
10
ns
I
4.0 V, 1 MHz
CJ
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
(1)
RθJA
RθJL
75
27
Maximum thermal resistance
°C/W
(1)
Note
(1)
PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
1800
DELIVERY MODE
US1J-E3/61T
0.064
0.064
0.064
0.064
0.064
0.064
0.064
0.064
61T
5AT
H
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
US1J-E3/5AT
7500
US1JHE3_A/H (1)
US1JHE3_A/I (1)
US1J-M3/61T
US1J-M3/5AT
US1JHM3_A/H (1)
US1JHM3_A/I (1)
1800
I
7500
61T
5AT
H
1800
7500
1800
I
7500
Note
(1)
AEC-Q101 qualified
Revision: 21-Jul-17
Document Number: 88768
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
Resistive or Inductive Load
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
0.1
0.01
US1A thru US1G
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
TJ = 25 °C
0
100
Lead Temperature (°C)
125
0
20
40
60
80
100
25
50
75
150
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
100
30
TL = 110 °C
8.3 ms Single Half Sine-Wave
TJ = 150 °C
TJ = 125 °C
25
20
15
10
5
10
1
TJ = 100 °C
TJ = 25 °C
0.1
0.01
TJ = -40 °C
US1J thru US1M
2.7 3.2 3.7
0
0.2
0.7
1.2
1.7
2.2
1
10
Number of Cycles at 60 Hz
100
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
Fig. 5 - Typical Instantaneous Forward Characteristics
1000
TJ = 150 °C
100
10
TJ = 125 °C
10
TJ = 150 °C
TJ = 100 °C
TJ = 125 °C
1
TJ = 100 °C
1
US1J thru US1M
0.1
TJ = 25 °C
TJ = -40 °C
0.1
TJ = 25 °C
US1A thru US1G
1.3 1.5 1.7
0.01
0.01
0.3
0.5
0.7
0.9
1.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Reverse Leakage Characteristics
Revision: 21-Jul-17
Document Number: 88768
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
100
10
1
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
US1A thru US1G
10
1
US1J thru US1M
0.1
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 7 - Typical Junction Capacitance
Fig. 8 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Jul-17
Document Number: 88768
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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