US1AL-28F [HDSEMI]
SOD123FL Plastic-Encapsulate Diodes;
| 型号： | US1AL-28F |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOD123FL Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1AL THRU US1ML
HD FL 46
SOD123FL Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●I
1A
50V-1000V
●High surge current capability
o
SOD-123FL
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● US1AL-US1DL : USL
●
US1GL : USM
● US1JL-US1ML : USH
US1
Item
Symbol Unit
Conditions
AL
50
BL DL FL GL JL
ML
KL
100 200 300 400 600 800 1000
VRRM
V
Repetitive Peak Reverse Voltage
35
70 140 210 280 420 560 700
V
MaximumRMS Voltage
RMS
60Hz Half-sine wave, Resistance
load, Ta=110℃
Average Forward Current
IF(AV)
A
A
1.0
25
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave,1 cycle,
Ta=25℃
IFSM
TJ
℃
℃
Junction Temperature
Storage Temperature
-55 ~ +150
-55 ~ +150
TSTG
Electrical Characteristics (T =25℃ Unless otherwise specified)
a
US1
Symbol
Unit
V
Item
Test Condition
FL
1F
1
A
A
L
1
B
B
L
1
D
D
L
1
G
G
L
1
J
J
L
1
K
K
L
1MML
VFM
IFM=1.0A
1.0
1.4
1.7
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
IRRM1
IRRM2
T =25℃
5
a
μA
VRM=VRRM
T =125℃
a
50
IF=0.5A IR=1A
IRR=0.25A
trr
ns
50
75
751)
271)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
1.0
0.8
0.6
0.4
0.2
0
25
20
8.3ms Single Half Sine Wave
JEDEC Method
15
10
5
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
1
2
10
20
100
0
25
50
75
100
125
150
TL(℃)
Number of Cycles
FIG.4：TYPICAL REVERSE CHARACTERISTICS
FIG.3: TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
Pulse width=300us
1% Duty Cycle
1000
100
10
100
US1AL-DL
US1GL
10
Tj=100℃
Tj=25℃
1.0
0.1
0.01
US1JL-ML
1.0
0.1
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Voltage(%)
VF(V)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SOD-123FL
Cathode Band
Top View
2.8 ±0.15
0.8±0.1
3.7 ±0.15
Dimensions in millimeters
SOD-123FL
2.85
1.2
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD123FL
SOD123FL
4
H
igh Diode Semiconductor
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