UG4A [SUNMATE]
4A plug-in fast recovery diode 50V DO-201 series ;
| 型号： | UG4A |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 4A plug-in fast recovery diode 50V DO-201 series 二极管 |
| 文件： | 总2页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UG4A - UG4D
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 200V
CURRENT: 4.0 A
Features
High surge capability
!
!
!
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
A
B
A
!
!
Mechanical Data
C
D
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
DO-201AD
Min
Dim
A
Max
¾
!
!
!
!
Polarity: Cathode Band
25.40
7.20
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
B
9.50
1.30
5.30
C
1.20
D
4.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
UG4A
UG4B
UG4C
UG4D
Symbol
Unit
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
Volts
Volts
Volts
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5mm) lead length at TL=75°C
I(AV)
4.0
Amps
Amps
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at TL=75°C
IFSM
150.0
0.95
Maximum instantaneous forward voltage at 4.0A
VF
IR
trr
Volts
µA
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
5.0
300.0
TA=100°C
Maximum reverse recovery time (NOTE 1)
20.0
ns
Maximum reverse recovery time
(NOTE 2)
TJ=25°C
TJ =100°C
30.0
50.0
trr
ns
Maximum recovered stored charge
(NOTE 2)
TJ=25°C
TJ=100°C
15.0
30.0
Qrr
nC
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
CJ
20.0
25.0
pF
°C/W
°C
RΘJA
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and QRR measured at tester: IF=4.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for measurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length
1 of 2
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RATINGS AND CHARACTERISTIC CURVES UG4A THRU UG4D
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG. 1 - FORWARD CURRENT
DERATING CURVE
200
100
T =75°C
L
6.0
5.0
4.0
3.0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
RESISTIVE OR INDUCTIVE LOAD
T , LEAD TEMPERATURE
L
0.375" (9.5mm) LEAD LENGTH
T , AMBIENT
A
TEMPERATURE
P.C.B. MOUNTED
10
1
0.5 x 0.5” (12 x 12mm)
COPPER PADS
2.0
1.0
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
0
25
50
75 100 125 150 175
TEMPERATURE, °C
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10
1
1,000
100
10
T =100°C
J
T =25°C
J
PULSE WIDTH=300µs
1% DUTY CYCLE
T =100°C
J
1
T =25°C
J
0.1
0.1
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
100
T =25°C
J
f=1.0 MHz
Vsig=50mVp-p
60
50
40
30
20
10
0
I =4.0A
di/dt=150A/µs
F
V
R
=30V
di/dt=100A/µs
di/dt=20A/µs
di/dt=50A/µs
10
di/dt=150A/µs
di/dt=50A/µs
di/dt=20A/µs
t
rr
Q
rr
1
0.1
0
25 50 75 100 125 150 175
JUNCTION TEMPERATURE, °C
1
10
100
REVERSE VOLTAGE, VOLTS
2 of 2
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