VN610 [STMICROELECTRONICS]
SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY; 单路高侧固态继电器
| 型号： | VN610 |
| 厂家： | 
ST |
| 描述： | SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY |
| 文件： | 总10页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN610SP
SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY
TARGET SPECIFICATION
TYPE
RDS(on)
IOUT
VCC
VN610SP
10mΩ
45A
36 V
■OUTPUT CURRENT: 45 A
■ CMOS COMPATIBLE INPUT
■ PROPORTIONAL LOAD CURRENT SENSE
■ UNDERVOLTAGE AND OVERVOLTAGEn
10
SHUT-DOWN
1
■ OVERVOLTAGE CLAMP
PowerSO-10
■ THERMAL SHUT DOWN
■ CURRENT LIMITATION
■ VERY LOW STAND-BY POWER DISSIPATION
■ PROTECTION AGAINST:
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
n LOSS OF GROUND AND LOSS OF V
CC
■ REVERSE BATTERY PROTECTION (*)
compatibility table). This device integrates an
analog current sense which delivers a current
proportional to the load current (according to a
known ratio). Active current limitation combined
with thermal shut-down and automatic restart
protect the device against overload. Device
automatically turns off in case of ground pin
disconnection.
DESCRIPTION
The VN610SP is a monolithic device made using
STMicroelectronics VIPower technology. It is
intended for driving resistive or inductive loads
with one side connected to ground. Active V pin
CC
BLOCK DIAGRAM
VCC
OVERVOLTAGE
UNDERVOLTAGE
VCC
CLAMP
PwCLAMP
DRIVER
OUTPUT
GND
ILIM
VDSLIM
LOGIC
IOUT
CURRENT
SENSE
INPUT
K
OVERTEMP.
(*) See application schematic at page 8
September 1999
1/10
1
VN610SP
ABSOLUTE MAXIMUM RATING
Symbol
VCC
Parameter
Value
Unit
V
DC supply voltage
41
-0.3
-VCC
- IGND
IOUT
Reverse DC supply voltage
DC reverse ground pin current
DC output current
V
-200
mA
A
Internally limited
-50
- IOUT
IIN
Reverse DC output current
DC input current
A
+/- 10
mA
V
-3
VCSENSE Current sense maximum voltage
+15
V
VESD
PTOT
Tj
Electrostatic discharge (R=1.5kΩ; C=100pF)
2000
V
Power dissipation at TC<25°C
Junction operating temperature
Case operating temperature
Storage temperature
125
W
°C
°C
°C
Internally limited
-40 to 150
-55 to 150
Tc
TSTG
CONNECTION DIAGRAM (TOP VIEW)
5
4
3
OUTPUT
6
7
8
9
GROUND
INPUT
C.SENSE
N.C.
OUTPUT
OUTPUT
OUTPUT
OUTPUT
2
1
N.C.
10
11
VCC
CURRENT AND VOLTAGE CONVENTIONS
ICC
VCC
VCC
IOUT
OUTPUT
IIN
INPUT
VIN
VOUT
ISENSE
CURRENT SENSE
VSENSE
GND
IGND
2/10
1
VN610SP
THERMAL DATA
Symbol
Parameter
Value
1
Unit
°C/W
°C/W
Rthj-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
(MAX)
(MAX)
50
ELECTRICAL CHARACTERISTICS (8V<V <36V; -40°C<Tj<150°C; unless otherwise specified)
CC
POWER
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Operating supply
voltage
VCC
5.5
13
36
V
VUSD
VOV
Undervoltage shutdown
3
4
5.5
48
10
20
35
V
Overvoltage shutdown (See Note 1)
36
42
V
I
OUT=15A; Tj=25oC
mΩ
mΩ
mΩ
RON
On state resistance
Clamp Voltage
IOUT=15A; Tj=150oC
IOUT=9A; VCC=6V
ICC=20 mA
Vclamp
41
48
55
V
(see note 1)
Off state; INPUT= n.c.; VCC=13V
25
5
µA
IS
Supply current
On state; V =5V; VCC=13V; IOUT=0A;
IN
mA
RSENSE=3.9K
IL(off)
Off state output current VIN=VOUT=0V
0
50
µA
Note 1: V
and V are correlated. Typical difference is 5V.
OV
clamp
SWITCHING (V =13V)
CC
Symbol
td(on)
Parameter
Test Conditions
Min
Typ
50
Max
Unit
µs
Turn-on delay time
Turn-on delay time
R1=0.87Ω
R1=0.87Ω
td(off)
50
µs
(dVOUT/dt)on Turn-on voltage slope R1=0.87Ω
(dVOUT/dt)off Turn-off voltage slope R1=0.87Ω
Switching losses
0.3
0.3
V/µs
V/µs
WON
R1=2.6Ω
1.0
0.5
mJ
mJ
energy at turn-on
Switching losses
energy at turn-off
WOFF
R1=2.6Ω
PROTECTIONS
Symbol
Parameter
Test Conditions
Min
Typ
Max
120
120
Unit
A
VCC=13V
45
75
Ilim
DC Short circuit current
5.5V<VCC<36V
A
Thermal shutdown
temperature
TTSD
150
175
200
°C
Thermal reset
temperature
TR
135
7
°C
°C
V
THYST
VDEMAG
Thermal hysteresis
15
I
OUT=2A; VIN=0; L=6mH
Turn-off output voltage
clamp
Vcc-41 Vcc-48 Vcc-55
50
Output voltage drop
limitation
IOUT=1.5A
VON
mV
Tj= -40°C...+150°C
3/10
1
VN610SP
ELECTRICAL CHARACTERISTICS (continued)
CURRENT SENSE (9V≤VCC≤16V) (See Fig.1)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IOUT=1.5A; VSENSE=0.5V;
Tj= -40°C...150°C
K1
IOUT/ISENSE
3300
4400
6000
IOUT=15A; VSENSE=4V; Tj=-40°C
Tj=25°C...150°C
4200
4400
4200
4400
2
4900
4900
4900
4900
6000
5750
5500
5250
K2
K3
IOUT/ISENSE
IOUT/ISENSE
IOUT=45A; VSENSE=4V; Tj=-40°C
Tj=25°C...150°C
Max analog sense
output voltage
VCC=5V; IOUT =7.5A; RSENSE=10KΩ
VCC >8V; IOUT=15A; RSENSE=10KΩ
V
V
VSENSE
4
Analog sense output
VSENSEH
voltage in overtemperature VCC=13V; RSENSE=3.9KΩ
5.5
V
condition
LOGIC INPUT
Symbol
VIL
Parameter
Test Conditions
VIN=1.25V
Min
Typ
Max
Unit
V
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
1.25
IIL
1
µA
V
VIH
3.25
IIH
VIN=3.25V
10
µA
V
VI(hyst)
0.5
6.5
IIN=1mA
IIN=-1mA
7.4
8.5
V
VICL
Input clamp voltage
-0.7
V
TRUTH TABLE
CONDITIONS
INPUT
OUTPUT
SENSE
L
H
L
H
0
Normal operation
Overtemperature
Nominal
L
H
L
L
L
L
L
L
L
L
L
H
H
0
VSENSEH
0
Undervoltage
H
L
0
0
Overvoltage
H
L
0
0
Short circuit to GND
Short circuit to VCC
H
L
0
0
H
< Nominal
Negative output voltage
clamp
L
L
0
4/10
2
VN610SP
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R 7637/1
TEST LEVELS
III
I
II
IV
Delays and
Impedance
Test Pulse
1
2
-25 V
+25 V
-25 V
-50 V
+50 V
-50 V
-75 V
+75 V
-100 V
+75 V
-6 V
-100 V
+100 V
-150 V
+100 V
-7 V
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
3a
3b
4
+25 V
-4 V
+50 V
-5 V
5
+26.5 V
+46.5 V
+66.5 V
+86.5 V
ISO T/R 7637/1
Test Pulse
TEST LEVELS RESULTS
I
II
C
C
C
C
C
E
III
C
C
C
C
C
E
IV
C
C
C
C
C
E
1
2
C
C
C
C
C
C
3a
3b
4
5
CLASS
CONTENTS
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
SWITCHING CHARACTERISTICS
VOUT
90%
70%
dVOUT/dt(off)
dVOUT/dt(on)
10%
tf
tr
t
INPUT
td(on)
td(off)
t
5/10
1
VN610SP
Fig 1: IOUT/ISENSE versus IOUT
IOUT/ISENSE
6500
6000
5500
5000
4500
4000
3500
3000
max.Tj=-40°C
max.Tj=25...150°C
min.Tj=25...150°C
typical value
min.Tj=-40°C
0
5
10
15
20
25
30
35
40
45
50
IOUT (A)
6/10
1
VN610SP
Figure1: Waveforms
NORMAL OPERATION
INPUT
LOAD CURRENT
SENSE
UNDERVOLTAGE
VCC
V
USDhyst
V
USD
INPUT
LOAD CURRENT
SENSE
OVERVOLTAGE
V
OV
VCC
V
V
> V
USD
OVhyst
CC
INPUT
LOAD CURRENT
SENSE
SHORT TO GROUND
INPUT
LOAD CURRENT
LOAD VOLTAGE
SENSE
SHORT TO VCC
INPUT
LOAD VOLTAGE
LOAD CURRENT
SENSE
<Nominal
<Nominal
OVERTEMPERATURE
T
T
TSD
Tj
R
INPUT
LOAD CURRENT
SENSE
V
R
SENSEH
I
=
SENSE
SENSE
7/10
1
1
VN610SP
APPLICATION SCHEMATIC
+5V
+5V
V
R
CC
prot
INPUT
D
ld
R
µC
prot
OUTPUT
CURRENT SENSE
R
GND
SENSE
R
GND
V
GND
D
GND
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j 600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / (IS(on)max).
LOAD DUMP PROTECTION
2) RGND ≥ (−VCC) / (-IGND
)
Dld is necessary (Transil or MOV) if the load dump peak
voltage exceeds VCC max DC rating. The same applies if
the device will be subject to transients on the VCC line that
are greater than the ones shown in the ISO T/R 7637/1
table.
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
µC I/Os PROTECTION:
PD= (-VCC)2/RGND
If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
be pulled negative. ST suggests to insert a resistor (Rprot
)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same RGND
.
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 10kΩ.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Recommended Rprot value is 65kΩ.
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
8/10
1
1
1
VN610SP
PowerSO-10 MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
3.35
0.00
0.40
0.35
9.40
7.40
9.30
7.20
7.20
6.10
5.90
MAX.
3.65
0.10
0.60
0.55
9.60
7.60
9.50
7.40
7.60
6.35
6.10
MIN.
0.132
0.000
0.016
0.013
0.370
0.291
0.366
0.283
0.283
0.240
0.232
TYP.
MAX.
0.144
0.004
0.024
0.022
0.378
0.300
0.374
0.291
300
A
A1
B
c
D
D1
E
E1
E2
E3
E4
e
0.250
0.240
1.27
0.050
F
1.25
1.35
0.049
0.543
0.053
0.567
H
13.80
14.40
h
0.50
1.70
0.002
0.067
Q
α
0º
8º
B
0.10
A B
10
6
5
H
E
E3 E1
E2
E4
1
SEATING
PLANE
DETAIL”A”
e
B
A
C
M
0.25
Q
D
=
=
=
=
h
D1
SEATING
PLANE
A
F
A1
L
A1
DETAIL”A”
α
9/10
2
VN610SP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approvalof STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in ITALY- All Rights Reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
10/10
1
相关型号：
VN7003AH
High-side driver with CurrentSense analog feedback for automotive applications
STMICROELECTR
VN7003AHTR
High-side driver with CurrentSense analog feedback for automotive applications
STMICROELECTR
VN7003ALH
High-side driver with CurrentSense analog feedback for automotive applications
STMICROELECTR
VN7003ALHTR
High-side driver with CurrentSense analog feedback for automotive applications
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明