TS472EIJT [STMICROELECTRONICS]
Very Low Noise Microphone Preamplifier with 2V Biased Output and Active Low Standby Mode; 超低噪声麦克风前置放大器, 2V偏置输出和低电平有效待机模式![TS472EIJT](http://pdffile.icpdf.com/pdf1/p00020/img/icpdf/TS472_96382_icpdf.jpg)
型号: | TS472EIJT |
厂家: | ![]() |
描述: | Very Low Noise Microphone Preamplifier with 2V Biased Output and Active Low Standby Mode |
文件: | 总20页 (文件大小:613K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TS472
Very Low Noise Microphone Preamplifier
with 2V Biased Output and Active Low Standby Mode
■ Low noise: 10nV/√Hz typ. equivalent input
Flip-chip - 12 bumps
noise @ F = 1kHz
■ Fully differential input/output
■ 2.2V to 5.5V single supply operation
■ Low power consumption @20dB: 1.8mA
■ Fast start up time @ 0dB: 5ms typ.
■ Low distortion: 0.1% typ.
Pin Connections (top view)
■ 40kHz bandwidth @ -3dB and adjustable
■ Active low standby mode function (1µA max)
■ Low noise 2.0V microphone bias output
■ Available in flip-chip lead-free package
■ ESD protection (2kV)
C1
C2
VCC
OUT-
STDBY
OUT+
GND
OUTPUT
BIAS
GS
IN+
BYPASS
IN-
Description
The TS472 is a differential-input microphone
preamplifier optimized for high-performance, PDA
and notebook audio systems.
This device features an adjustable gain from 0dB
to 40dB with excellent power-supply and
common-mode rejection ratios. In addition, the
TS472 has a very low-noise microphone bias
generator of 2V.
Applications
■ Video and photo cameras with sound input
■ Sound acquisition & voice recognition
■ Video conference systems
It also includes a complete shutdown function,
with active low standby mode.
■ Notebook computers and PDAs
Order Codes
Part Number
TS472EIJT
Temperature Range
Package
Packing
Marking
-40, +85°C
Flip-Chip
Tape & Reel
472
Rev 2
1/20
October 2005
www.st.com
20
Typical Application Schematic
TS472
1
Typical Application Schematic
Figure 1 shows a typical application schematic for the TS472 with gain = 20dB. To change the
gain see Chapter 4.5: Gain settings on page 14.
Figure 1. Application schematic
Optional
C1
VCC
Cs
1uF
C2
C3
1uF
Rpos
U1
TS472
Vcc
Rout+
Rout-
Cout+
Cout-
Cin+
Cin-
A1 IN+
B1 IN-
OUT+ C2
Positive Output
Negative Output
+
OUT-
D2
Electret Mic
GAIN
SELECT B2
Rneg
G
BYPASS
A2 BIAS
D1
Bias
2.0V
Cb
1uF
Standby Control
Table 1.
External component descriptions
Functional Description
Components
Input coupling capacitors which blocks the DC voltage at the amplifier input terminal
and determine Lower cut-off frequency.
Cin+, Cin-
Output coupling capacitors which blocks the DC voltage coming from the amplifier
output terminal (pins C2 and D2) and determine Lower cut-off frequency.
Cout+, Cout-
Output load resistors which allow to charged the output coupling capacitors Cout.
Rout+, Rout-
These output resistors can be represented by an input impedance of a following
stage.
Rpos, Rneg
Microphone biasing resistors
Cs
Cb
Supply Bypass capacitor which provides power supply filtering.
Bypass pin capacitor which provides half supply filtering.
Low pass filter capacitors which can determine Higher cut-off frequency.
Bias output capacitor which keeps voltage stabilized and provides 2.0V bias filtering.
C1, C2
C3
2/20
TS472
Absolute Maximum Ratings
2
Absolute Maximum Ratings
Table 2.
Symbol
Key parameters and their absolute maximum ratings
Parameter
Value
Unit
(1)
V
6
V
CC
Supply voltage
Input Voltage
V
GND-0.3 to V +0.3
V
i
CC
T
Operating Free Air Temperature Range
Storage Temperature
-40 to + 85
-65 to +150
150
°C
°C
°C
oper
T
stg
T
Maximum Junction Temperature
j
R
Flip-chip Thermal Resistance Junction to Ambient
Human Body Model
180
2
°C/W
kV
thja
ESD
ESD
Machine Model
200
250
V
Lead Temperature (soldering, 10sec)
°C
1. All voltages values are measured with respect to the ground pin.
Table 3.
Symbol
Operating conditions
Parameter
Value
Unit
V
Supply Voltage
2.2 to 5.5
V
CC
Typical Differential Gain (GS connected to 4.7kΩ or
Bias)
G
20
dB
V
Standby Voltage Input:
1.5 ≤ V
≤ V
CC
V
STB
Device ON
STB
GND ≤ V
≤ 0.4
Device OFF
STB
T
Operational Free Air Temperature Range
-40 to +85
150
°C
OP
R
Flip-chip Thermal Resistance Junction to Ambient
°C/W
thja
3/20
Electrical Characteristics
TS472
3
Electrical Characteristics
Table 4.
Symbol
V
= 3V, GND = 0V, T
= 25°C (unless otherwise specified)
CC
amb
Parameter
Equivalent Input Noise Voltage Density
=100Ω at 1KHz
Min.
Typ.
Max.
Unit
nV
-----------
e
10
n
R
Hz
EQ
Total Harmonic Distortion + Noise
20Hz ≤ F≤ 20kHz, Gain=20dB, Vin=50mV
THD+N
0.1
10
%
RMS
V
mV
RMS
Input Voltage, Gain=20dB
70
IN
Bandwidth @ -3dB
Bandwidth @ -1dB
pin A3, B3 floating
40
20
B
kHz
W
Overall Output Voltage Gain (Rgs variable)
Minimum Gain, Rgs infinite
Maximum Gain, Rgs=0
G
-3
39.5
-1.5
41
0
42.5
dB
Z
Input impedance referred to GND
Resistive load
80
10
100
120
kΩ
kΩ
pF
IN
R
LOAD
C
Capacitive load
100
2.4
1
LOAD
I
Supply current, Gain=20dB
Standby current
1.8
mA
µA
CC
I
STANDBY
Power Supply Rejection Ratio, Gain=20dB, F=217Hz,
Vripple=200mVpp, Inputs grounded
Differential Output
PSRR
dB
-70
-46
Single-Ended Outputs,
Table 5.
Symbol
Bias output: V
= 3V, GND = 0V, T
= 25°C (unless otherwise specified)
amb
CC
Parameter
Min.
1.9
80
Typ.
2
Max.
2.1
Unit
V
V
No load condition
Output resistance
OUT
R
100
2
120
Ω
OUT
I
Output Bias Current
mA
OUT
Power Supply Rejection Ratio, F=217Hz,
Vripple=200mVpp
PSRR
70
80
dB
4/20
TS472
Electrical Characteristics
Table 6.
Gain
Differential RMS noise voltage
Input Referred Noise Voltage
Output Noise Voltage
(µV
)
(µV
)
RMS
RMS
(dB)
Unweighted Filter
A-weighted Filter Unweighted Filter A-weighted Filter
0
15
3.4
1.4
10
2.3
0.9
15
34
10
23
91
20
40
141
Table 7.
Bias output RMS noise voltage
Unweighted Filter
(µV
A-weighted Filter
Cout
(µF)
)
(µV
)
RMS
RMS
1
5
4.4
1.2
10
2.2
Table 8.
Gain
SNR (signal to noise ratio), THD+N < 0.5%
Unweighted Filter
(dB)
A-weighted Filter
(dB)
(dB)
Vcc=2.2V
Vcc=3V
Vcc=5.5V
Vcc=2.2V
Vcc=3V
Vcc=5.5V
0
75
82
70
76
83
72
76
83
74
79
89
80
80
90
82
80
90
84
20
40
Note:
Unweighted filter = 20Hz ≤ F ≤ 20kHz
5/20
Electrical Characteristics
TS472
Table 9.
Index of graphics
Description
Figure
Page
Current consumption vs. power supply voltage
Standby threshold voltage vs. power supply voltage
Frequency response
Figure 2 to 3
Figure 4
page 7
page 7
page 7
page 7
page 7
page 8
page 8
page 8
page 9
page 9
page 9
page 9
page 9
page 10
page 11
page 11
Figure 5
Bias output voltage vs. bias output current
Bias output voltage vs. power supply voltage
Bias PSRR vs. frequency
Figure 6
Figure 7
Figure 8 to 9
Figure 10 to 11
Figure 12 to 13
Figure 14
Differential output PSRR vs. frequency
Differential output PSRR vs. frequency
Single-ended output PSRR vs. frequency
Equivalent input noise voltage density
D gain vs. power supply voltage
Dgain vs. ambient temperature
Figure 15
Figure 16
Figure 17
Maximum input voltage vs. gain, THD+N<1%
THD+N vs. input voltage
Figure 18 to 19
Figure 20 to 25
Figure 26 to 27
Figure 28 to 29
THD+N vs. frequency
Transient response
6/20
TS472
Electrical Characteristics
Figure 2. Current consumption vs. power
supply voltage
Figure 3. Current consumption vs. power
supply voltage
3.0
3.0
No Loads, Maximum Gain
No Loads, Minimum Gain
2.5
2.0
1.5
1.0
2.5
2.0
1.5
1.0
TAMB=25°C
TAMB=85°C
TAMB=-40°C
TAMB=85°C
TAMB=-40°C
TAMB=25°C
0.5
0.0
0.5
0.0
2.2
3
4
Power Supply Voltage (V)
5
3
4
Power Supply Voltage (V)
5
5.5
5.5
2.2
Figure 4. Standby threshold voltage vs.
power supply voltage
Figure 5. Frequency response
30
1.0
0.8
0.6
0.4
Cb=1µF, TAMB=25°C, Gain=20dB, Rout=100kΩ
20
10
0
no C1,C2
C1,C2=100pF
Cin,Cout=100nF
C1,C2=220pF
0.2
-10
-20
Cin,Cout=10nF
No Loads
Tamb = 25°C
0.0
2.2
3
4
5
5.5
10
100
1000
10000
100000
Power Supply Voltage (V)
Frequency (Hz)
Figure 6. Bias output voltage vs. bias output Figure 7. Bias output voltage vs. power
current supply voltage
2.2
2.0
1.8
1.6
1.4
2.2
2.0
1.8
1.6
1.4
Tamb=25°C
Ibias=0mA
Ibias=2mA
Ibias=4mA
Tamb=85°C
Tamb=-40°C
Tamb=25°C
5.5
0
1
2
3
4
3
4
5
2.2
Bias Output Current (mA)
Power Supply Voltage (V)
7/20
Electrical Characteristics
TS472
Figure 8. Bias PSRR vs. frequency
Figure 9. Bias PSRR vs. frequency
0
0
Vripple=200mVpp
Vripple=200mVpp
Vcc=5V
-20
Cb=1µF
Vcc=3V
-20
Cb=1µF
Tamb=25°C
Tamb =25
°C
-40
-60
Bias=1kΩ to GND
-40
-60
Bias floating or 1k
Ω
to GND
-80
-80
Bias floating
-100
-100
50
20k
100
1k
Frequency (Hz)
10k
50
20k
100
1k
Frequency (Hz)
10k
Figure 10. Differential output PSRR vs.
frequency
Figure 11. Differential output PSRR vs.
frequency
0
0
VRIPPLE=200mVPP, Inputs grounded
VRIPPLE=200mVPP, Inputs grounded
VCC=5V, Cb=Cin=1µF, TAMB =25°C
VCC=3V, Cb=Cin=1µF, TAMB =25°C
-20
-40
-20
-40
Maximum Gain
Minimum Gain
Maximum Gain
Gain=20dB
-60
-60
Minimum Gain
Gain=20dB
-80
-80
-100
-100
100
1k
Frequency (Hz)
10k
100
1k
Frequency (Hz)
10k
50
20k
50
20k
Figure 12. Differential output PSRR vs.
frequency
Figure 13. Differential output PSRR vs.
frequency
0
0
VRIPPLE=200mVPP, Inputs grounded
VRIPPLE=200mVPP, Inputs grounded
VCC=3V, Minimum Gain, Cin=1µF, TAMB =25°C
VCC=3V, Gain=20dB, Cin=1µF, TAMB =25°C
-20
-20
-40
-40
Cb=1µF
Cb=1µF
No Cb
-60
Cb=100nF
No Cb
-60
-80
-80
Cb=100nF
-100
-100
50
100
1k
10k
100
1k
10k
50
20k
20k
Frequency (Hz)
Frequency (Hz)
8/20
TS472
Electrical Characteristics
Figure 14. Single-ended output PSRR vs.
frequency
Figure 15. Equivalent input noise voltage
density
0
1000
Vripple=200mVpp
Cin=100nF
-10 Inputs grounded
REQ=100
Ω
Cb=1
Cin=100nF
Tamb=25
µF
Vcc=3V
TAMB=25
°
C
-20
-30
-40
-50
-60
-70
-80
°
C
100
10
1
Vcc=2.2V
100
Vcc=5V
10000
10
100
1k
10k
100k
50
20k
1000
Frequency (Hz)
Frequency (Hz)
Figure 16. ∆ gain vs. power supply voltage
Figure 17. ∆gain vs. ambient temperature
1.0
0.50
F=1kHz
F=1kHz
Vin=5mV
Tamb=25°C
VIN=5mV
0.8
0.6
0.25
Maximum Gain
0.00
0.4
-0.25
Maximum Gain
0.2
-0.50
Gain=20dB
0.0
Minimum Gain
Gain=20dB
-0.75
-0.2
-0.4
Minimum Gain
-1.00
5.5
3
4
5
-40
-20
0
20
40
60
80
2.2
Power Supply Voltage (V)
Ambient Temperature (°C)
Figure 18. Maximum input voltage vs. gain,
THD+N<1%
Figure 19. Maximum input voltage vs. power
supply voltage, THD+N<1%
150
TAMB=25°C, F=1kHz, THD+N<1%
140
120
100
80
Gain=0dB
TAMB=25°C
VCC=5.5V
F=1kHz
THD+N<1%
100
60
Gain=30dB
Gain=20dB
50
Gain=40dB
40
VCC=3V
20
VCC=2.2V
0
0
3
4
5
5.5
2.2
0
10
20
30
40
Power Supply Voltage (V)
Gain (dB)
9/20
Electrical Characteristics
TS472
Figure 20. THD+N vs. input voltage
Figure 21. THD+N vs. input voltage
10
10
Minimum Gain
Minimum Gain
Gain=20dB
1
Gain=20dB
1
0.1
0.1
Maximum Gain
Maximum Gain
Tamb=25°C, Vcc=3V, F=100Hz,
Tamb=25°C, Vcc=5V, F=100Hz,
0.01
1E-3
0.01
1E-3
Cb=1
µ
F, RL=10k
Ω
, BW=100Hz-120kHz
Cb=1
µ
F, RL=10k
Ω
, BW=100Hz-120kHz
0.3
0.3
0.01
0.1
0.01
0.1
Input Voltage
(
VRMS
)
Input Voltage (VRMS)
Figure 22. THD+N vs. input voltage
Figure 23. THD+N vs. input voltage
10
10
Minimum Gain
Minimum Gain
Gain=20dB
Gain=20dB
1
1
0.1
0.1
Maximum Gain
Maximum Gain
Tamb=25°C, Vcc=5V, F=1kHz,
Cb=1 F, RL=10k , BW=100Hz-120kHz
Tamb=25°C, Vcc=3V, F=1kHz,
Cb=1 F, RL=10k , BW=100Hz-120kHz
0.01
1E-3
0.01
µ
Ω
µ
Ω
0.3
0.3
0.01
Input Voltage
0.1
1E-3 0.01
Input Voltage
0.1
(
VRMS)
(
VRMS)
Figure 24. THD+N vs. input voltage
Figure 25. THD+N vs. input voltage
10
10
Minimum Gain
Minimum Gain
Maximum Gain
Maximum Gain
1
1
Gain=20dB
Gain=20dB
0.1
0.1
TAMB=25°C, VCC=3V, F=20kHz,
0.01
Tamb=25°C, Vcc=5V, F=20kHz,
0.01
Cb=1
µ
F, RL=10k
Ω
, BW=100Hz-120kHz
0.01
Cb=1
µ
F, RL=10k
Ω
, BW=100Hz-120kHz
0.01
0.3
0.3
1E-3
0.1
1E-3
0.1
Input Voltage (VRMS)
Input Voltage (VRMS)
10/20
TS472
Electrical Characteristics
Figure 27. THD+N vs. frequency
Figure 26. THD+N vs. frequency
10
10
Tamb=25°C, Vcc=3V, RL=10k
Cb=1 F, BW=100Hz-120kHz
Ω
Tamb=25
°C, Vcc=5V, RL=10kΩ
µ
Cb=1 F, BW=100Hz-120kHz
µ
Maximum Gain, Vin=15mVRMS
Maximum Gain, Vin=15mVRMS
Minimum Gain, Vin=100mVRMS
1
0.1
1
Minimum Gain, Vin=100mVRMS
Gain=20dB, Vin=50mVRMS
Gain=20dB, Vin=50mVRMS
0.1
0.01
0.01
50
100
1000
10000 20k
50
100
1000
10000 20k
Frequency (Hz)
Frequency (Hz)
Figure 28. Transient response
Figure 29. Transient response
11/20
Application Information
TS472
4
Application Information
4.1
Differential configuration principle
The TS472 is a full-differential input/output microphone preamplifier. The TS472 also includes a
common mode feedback loop that controls the output bias value to average it at Vcc/2. This
allows the device to always have a maximum output voltage swing, and by consequence,
maximize the input dynamic voltage range.
The advantages of a full-differential amplifier are:
●
●
●
Very high PSRR (Power Supply Rejection Ratio).
High common mode noise rejection.
In theory, the filtering of the internal bias by an external bypass capacitor is not necessary.
But, to reach maximum performances in all tolerance situations, it’s better to keep this
option.
4.2
Higher cut-off frequency
The higher cut-off frequency F of the microphone preamplifier depends on an external
CH
capacitors C , C .
1
2
TS472 has an internal first order low pass filter (R=40kΩ, C=100pF) to limit the highest cut-off
frequency on 40kHz (with a 3dB attenuation). By connecting C , C you can decrease F with
1
2
CH
regard to following formula:
1
FCH = ---------------------------------------------------------------------------------
2π 40×103 (C1, 2 + 100×10–12
)
Figure 24, which follows, directly shows the higher cut-off frequency in Hz versus the value of
the output capacitors C , C in nF:
1
2
Figure 30. Higher cut-off frequency vs. output capacitors
40
10
1
200
400
600
800
1000
C1, C2 (pF)
For example, F is almost 20kHz with C =100pF.
CH
1,2
12/20
TS472
Application Information
4.3
Lower cut-off frequency
The lower cut-off frequency F of the microphone preamplifier depends on the input
CL
capacitors C and output capacitors C . These input and output capacitors are mandatory in
in
out
a application because of DC voltage blocking.
The input capacitors C in serial with the input impedance of the TS472 (100kΩ) are equivalent
in
to a first order high pass filter. Assuming that F is the lowest frequency to be amplified (with a
CL
3dB attenuation), the minimum value of C is:
in
1
Cin = ----------------------------------------------
2π FCL 100×103
The capacitors C in serial with the output resistors R (or an input impedance of the next
out
out
stage) are also equivalent to a first order high pass filter. Assuming that F is the lowest
CL
frequency to be amplified (with a 3dB attenuation), the minimum value of C is:
out
1
C
out= -------------------------------------
2π FCL Rout
Figure 31. Lower cut-off frequency vs.
input capacitors
Figure 32. Lower cut-off frequency vs.
output capacitors
1000
1000
Rout=10k
Ω
ZinMAX
Typical Zin
100
100
ZinMIN
Rout=100k
Ω
10
10
1
10
Cin (nF)
100
1
10
100
1000
Cout (nF)
Figure 30 and Figure 32 give directly the lower cut-off frequency (with 3dB attenuation) versus
the value of the input or output capacitors
Note:
In case F is kept the same for calculation, It must be taken in account that the 1st order high-
CL
pass filter on the input and the 1st order high-pass filter on the output create a 2nd order high-
pass filter in the audio signal path with an attenuation of 6dB on F and a rolloff of
CL
40db⁄ decade.
4.4
Low-noise microphone bias source
The TS472 provides a very low noise voltage and power supply rejection BIAS source designed
for biasing an electret condenser microphone cartridges. The BIAS output is typically set at
2.0 V (no load conditions), and can typically source 2mA with respect to drop-out,
DC
determined by the internal resistance 100Ω (for detailed load regulation curves see Figure 6).
13/20
Application Information
TS472
4.5
Gain settings
The gain in the application depends mainly on:
●
●
●
●
the sensitivity of the microphone,
the distance to the microphone,
the audio level of the sound,
the desired output level.
The sensitivity of the microphone is generally expressed in dB/Pa, referenced to 1V/Pa. For
example, the microphone used in testing had an output voltage of 6.3 mV for a sound pressure
of 1 Pa (where Pa is the pressure unit, Pascal). Expressed in dB, the sensitivity is:
20Log(0.0063) = -44 dB/Pa
To facilitate the first approach, the following table gives voltages and gains used with a low cost
omnidirectional Electret Condenser Microphone of -44dB/Pa.
Table 10. Typical TS472 gain vs. distance to the microphone (sensitivity -44dB/Pa)
Distance to microphone
Microphone output voltage
TS472 Gain
30 mV
1 cm
20
RMS
3 mV
20 cm
100
RMS
The gain of the TS472 microphone preamplifier can be set:
1. From -1.5 dB to 41 dB by connecting an external grounded resistor R to the GS pin. It
GS
allows to adapt more precisely the gain to each application.
Table 11. Selected gain vs. gain select resistor
Gain (dB)
0
10
20
30
1k
40
68
R
(Ω)
470k
27k
4k7
GS
Figure 33. Gain in dB vs. gain select
resistor
Figure 34. Gain in V/V vs. gain select
resistor
50
Tamb=25°C
Tamb=25°C
100
40
30
20
10
0
10
1
-10
10
100
1k
10k
RGS (Ω)
100k
1M
10
100
1k
10k
RGS (Ω)
100k
1M
14/20
TS472
Application Information
2. To 20dB by applying V > 1V on Gain Select (GS) pin. This setting can help to reduce
GS
DC
a number of external components in an application, because 2.0 V is provided by
DC
TS472 itself on BIAS pin.
Following Figure 26 gives other values of the gain vs. voltage applied on GS pin
Figure 35. Gain vs. gain select voltage
Tamb=25°C
40
20
0
-20
-40
-60
-80
0
0.2
0.4
0.6
0.8
4
5
VGS (V)
4.6
Wake-up time
When the standby is released to put the device ON, a signal appears on the output a few
microseconds later, and the bypass capacitor Cb is charged in a few milliseconds. As Cb is
directly linked to the bias of the amplifier, the bias will not work properly until the Cb voltage is
correct.
In the typical application, when a biased microphone is connected to the differential input via
the input capacitors (Cin), (and the output signal is in line with the specification), the wake-up
time will depend upon the values of the input capacitors Cin and the gain. When gain is lower
than 0dB, the wake-up time is determined only by the bypass capacitor Cb, as described
above. For a gain>0dB, see Figure 36
Figure 36. Wake-up time in the typical application vs. input capacitors
60
Tamb = 25°C
Vcc=3V
Cb=1µF
50
40
30
20
10
0
Maximum Gain
Gain=20dB
20
40
60
80
100
Input capacitors CIN (nF)
15/20
Application Information
TS472
4.7
Standby mode
When the standby command is set, the time required to set the output stages (differential
outputs and 2.0V bias output) in high impedance and the internal circuitry in shutdown mode is
a few microseconds.
4.8
Layout considerations
The TS472 has sensitive pins to connect C1, C2 and Rgs. To obtain high power supply
rejection and low noise performance, it is mandatory that the layout track to these component is
as short as possible.
Decoupling capacitors on Vcc and bypass pin are needed to eliminate power supply drops. In
addition, the capacitor location for the dedicated pin should be as close to the device as
possible.
4.9
Demoboard
A demoboard for the TS472 is available.
For more information about this demoboard, please refer to Application Note AN2240, which
can be found on www.st.com.
Figure 37. Top layer
Figure 38. Bottom layer
Figure 39. Component location
16/20
TS472
Application Information
Figure 40. Demoboard schematic
Jumper J4
P10
Vx
P11 Vbias
P5
VCC
C1
C9
1
2
1
2
1
1
2
1
1
2
P2
100pF
100nF
Vcc
R9
100k
R10
R6
4
POS. OUTPUT
NEG. OUTPUT
C7
1uF
C6
100nF
3
2
1
Bias
C2
2
C8
2
OUTPUT
C10
1uF
100pF
100nF
R8
100k
TS472_FC_Adapter
C4
Vcc
1
1
2
P1
100nF
4
3
2
1
6
8
IN+
IN-
OUT+ 13
POS. INPUT
NEG. INPUT
Jumper J2
OUT-
12
C5
2
INPUT
GAIN
100nF
5
P8
SELECT
BYPASS
Gain
Bias
Bias
20dB
Min
Max
Rgs
1
2
4
6
8
3
5
7
BIAS
R7
Bias 4
10
Gain Select
C3
1uF
R1
1
2
2
2
2
2
C11
R11
470k
R2
1
P9
27k
0dB
1
3
5
7
9
2
4
6
8
10
10dB
20dB
30dB
40dB
R3
1
P6
VCC
4.7k
Jumper J1
1
2
3
R4
1
Rgs
1k
StandBy
R5
1
68
Jumper J3
17/20
Package Mechanical Data
TS472
5
Package Mechanical Data
Figure 41. TS472 footprint recommendation
75µmmin.
100µm max.
500µm
500µm
Φ=250µm
Track
Φ=400µm typ.
Φ=340µm min.
150µm min.
Non Solder mask opening
Pad in Cu 18µmwith Flash NiAu (2-6µm, 0. 2µm max. )
Figure 42. Pin-out (top view)
C1
C2
GS
IN-
VCC
OUT-
STDBY
OUT+
GND
3
2
1
OUTPUT
BIAS
IN+
BYPASS
B
D
C
A
n
Balls are underneath
Figure 43. Marking (top view)
■
■
■
■
■
ST Logo
E
Part number: 472
E Lead free Bumps
Three digits Datecode: YWW
The dot is for marking pin A1
4 7 2
Y W
W
18/20
TS472
Package Mechanical Data
Figure 44. Flip-chip - 12 bumps
2.1 mm
■
■
■
■
■
■
■
■
Die size: 2.1mm x 1.6mm 30µm
Die height (including bumps): 600µm
Bumps diameter: 315µm 50µm
Bump Diameter Before Reflow: 300µm 10µm
Bumps Height: 250µm 40µm
Die Height: 350µm 20µm
1.6 mm
0.5mm
0.5mm
0.315mm
Pitch: 500µm 50µm
Coplanarity: 50µm max
Figure 45. Tape & reel specification (top view)
1.5
4
1
1
A
A
8
Die size X + 70µm
4
All dimensions are in mm
User direction of feed
19/20
Revision History
TS472
6
Revision History
Date
Revision
Changes
July 2005
Oct. 2005
1
2
First Release corresponding to the product preview version.
First release of fully mature product datasheet.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
20/20
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