T820-400W [STMICROELECTRONICS]
SNUBBERLESS TRIAC; 无缓冲器TRIAC
| 型号： | T820-400W |
| 厂家： | 
ST |
| 描述： | SNUBBERLESS TRIAC |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T820W
T830W
SNUBBERLESS TRIAC
FEATURES
A2
A1
ITRMS = 8 A
VDRM = VRRM = 400V to 700V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
G
DESCRIPTION
The T820/830W triacs use high performanceglass
passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
A1
A2
G
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360° conductionangle)
Tc= 95°C
8
A
ITSM
Non repetitivesurge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
88
A
tp = 10 ms
100
(1/2 cycle, 50 Hz)
I2t
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
50
20
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500 mA
Repetitive
F = 50 Hz
A/µs
dIG /dt = 1 A/µs.
Non Repetitive
100
Tstg
Tj
Storage temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Operating junction temperature range
Tl
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260
T820 / 830-xxxW
Symbol
Parameter
Unit
400
600
700
Repetitive peak off-state voltage
Tj = 125°C
VDRM
VRRM
400
600
700
V
April 1995
1/5
T820W / 830W
THERMAL RESISTANCES
Symbol
Parameter
Value
50
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for A.C (360°conduction angle)
3.1
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
Quadrant
I-II-III
T820
T830
Unit
mA
V
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 25°C
MAX
MAX
MIN
20
30
VGT
I-II-III
1.5
0.2
2
VGD
tgt
I-II-III
V
VD=VDRM IG = 500mA
dlG/dt= 3Aµs
I-II-III
TYP
µs
IH *
IT= 100mA
Gate open
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 125°C
MAX
MAX
MAX
MAX
MIN
35
50
VTM
*
ITM= 11A tp= 380µs
1.5
10
2
V
IDRM
IRRM
VDRM rated
VRRM rated
µA
mA
V/µs
dV/dt *
Linear slope up to
VD=67%VDRM
200
10
300
20
Gate open
(dV/dt)c * (dI/dt)c = 4.5 A/ms (see note) Tj= 125°C
MIN
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : Inusual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary touse
a snuber R-C network accross T820W / T830W triacs.
2/5
T820W / 830W
Fig.1 : Maximum power dissipation versus RMS
on-state current.
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
Tcase (oC)
P (W)
P(W)
10
10
8
-90
= 180o
180 O
-95
= 120o
= 90o
8
6
-100
-105
-110
-115
-120
-125
Rth = 0 o C/W
2.5o C/W
5o C/W
6
= 60o
7.5 o C/W
= 30o
4
4
2
2
I
(A)
Tamb (oC)
T(RMS)
0
0
0
1
2
3
4
5
6
7
8
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.3 : RMSon-state current versuscase tempera-
ture.
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
Zth/Rth
1
I
(A)
T(RMS)
10
8
Zth(j-c)
= 180o
0.1
6
Zth(j-a)
4
0.01
2
Tcase(oC)
tp(s)
1E+2 5E+2
0
1E-3
1E+1
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-2
1E-1
1E+0
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
100
Tj initial = 25oC
2.6
2.4
2.2
2.0
80
60
40
20
0
Igt
1.8
1.6
1.4
1.2
1.0
Ih
0.8
0.6
0.4
Number of cycles
10
Tj(oC)
-40 -20
0
20
40
60
80 100 120 140
1
100
1000
3/5
T820W / 830W
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalue of I2t.
Fig.8 : On-statecharacteristics(maximum values).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
1000
100
10
1000
100
10
Tj initial = 25oC
I
Tj initial
25oC
TSM
2
I
t
Tj max
Tj max
Vto =0.9V
Rt =0.048
1
tp(ms)
V
(V)
TM
0.1
1
0
0.5
1
1.5
2
2.5
3
3.5 4 4.5 5 5.5 6
1
10
4/5
T820W / 830W
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
Millimeters Inches
REF.
Min.
10
15.9
9.8
Max.
10.4
16.4
10.6
30.6
Min.
Max.
0.409
0.645
0.417
1.204
A
B
0.393
0.626
0.385
1.126
B1
C
D
E
28.6
16 typ
0.630 typ
9
9.3
4.6
3.2
2.7
0.7
2.75
5.2
2.7
1.7
1
0.354
0.173
0.118
0.098
0.015
0.098
0.195
0.094
0.045
0.030
0.366
0.181
0.126
0.106
0.027
0.108
0.204
0.106
0.067
0.039
H
I
4.4
3
J
L
2.5
0.4
2.5
4.95
2.4
1.15
0.75
M
N
N1
O
P
Cooling method : C
Marking : Type number
Weight : 2.1g
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
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5/5
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