T820-XXXW [STMICROELECTRONICS]
SNUBBERLESS TRIAC; 无缓冲器TRIAC型号: | T820-XXXW |
厂家: | ST |
描述: | SNUBBERLESS TRIAC |
文件: | 总5页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
T820-xxxW
T830-xxxW
®
SNUBBERLESS TRIAC
FEATURES
A2
A1
■
■
■
■
■
ITRMS = 8 A
VDRM = VRRM = 600V to 800V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
G
DESCRIPTION
The T820/830W triacs use high performance glass
passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
G
A2
A1
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360° conduction angle)
Tc= 95°C
8
A
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
88
A
tp = 10 ms
100
(1/2 cycle, 50 Hz)
I2t
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
50
20
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500 mA
Repetitive
F = 50 Hz
A/µs
dIG /dt = 1 A/µs.
Non Repetitive
100
Tstg
Tj
Storage temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Tl
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260
°C
T820 / T830-xxxW
Symbol
Parameter
Unit
600
700
800
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
600
700
800
V
September 2001 - Ed: 1A
1/5
T820-xxxW / T830-xxxW
THERMAL RESISTANCES
Symbol
Parameter
Value
50
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for A.C (360° conduction angle)
3.1
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
Quadrant
I-II-III
T820
T830
Unit
mA
V
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 25°C
MAX
MAX
MIN
20
30
VGT
I-II-III
1.5
0.2
2
VGD
tgt
I-II-III
V
VD=VDRM IG =500mA
I-II-III
TYP
µs
dlG/dt= 3Aµs
IH *
IT= 100mA
Gate open
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 125°C
MAX
MAX
MAX
MAX
MIN
35
50
VTM
*
ITM= 11A tp= 380µs
1.5
10
2
V
IDRM
IRRM
VDRM rated
VRRM rated
µA
mA
V/µs
dV/dt *
Linear slope up to
VD=67%VDRM
200
10
300
20
Gate open
(dV/dt)c * (dI/dt)c = 4.5 A/ms (see note)
Tj= 125°C
MIN
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T820W / T830W triacs.
2/5
T820-xxxW / T830-xxxW
Fig. 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
Tcase (oC)
P (W)
P(W)
10
10
8
-90
= 180o
180 O
-95
= 120o
= 90o
8
-100
-105
-110
-115
-120
-125
Rth = 0 o C/W
2.5o C/W
5o C/W
6
6
= 60o
7.5o C/W
= 30 o
4
4
2
2
Tamb (oC)
I
(A)
T(RMS)
0
0
0
1
2
3
4
5
6
7
8
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 3: RMS on-state current versus case temper-
ature.
Fig. 4: Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
Zth/Rth
1
I
(A)
T(RMS)
10
8
Zth(j-c)
= 180o
0.1
6
Zth(j-a)
4
0.01
2
Tcase(oC)
tp(s)
1E+2 5E+2
0
1E-3
1E+1
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-2
1E-1
1E+0
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
100
Tj initial = 25oC
2.6
2.4
2.2
2.0
80
60
40
20
0
Igt
1.8
1.6
1.4
1.2
1.0
Ih
0.8
0.6
0.4
Number of cycles
10
Tj(oC)
1
100
1000
-40 -20
0
20
40
60
80 100 120 140
3/5
T820-xxxW / T830-xxxW
Fig. 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
Fig. 8: On-state characteristics (maximum val-
ues).
2
2
I
(A). I t (A s)
I
(A)
TM
TSM
1000
100
10
1000
100
10
Tj initial = 25oC
I
Tj initial
25oC
TSM
2
I
t
Tj max
Tj max
Vto =0.9V
Rt =0.048
1
tp(ms)
V
(V)
TM
0.1
1
1
0
0.5
1
1.5
2
2.5
3
3.5 4 4.5 5 5.5 6
10
4/5
T820-xxxW / T830-xxxW
DIMENSIONS
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
B
4.40
2.50
2.50
0.40
0.75
1.15
1.15
4.95
2.40
10.00
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
0.173
0.098
0.098
0.016
0.030
0.045
0.045
0.195
0.094
0.394
0.181
0.106
0.108
0.028
0.039
0.067
0.067
0.205
0.106
0.409
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Diam
16.00 typ.
0.630 typ.
28.60
9.80
30.60
10.60
16.40
9.30
1.125
0.386
0.626
0.354
0.118
1.205
0.417
0.646
0.366
0.126
15.90
9.00
3.00
3.20
■
■
■
■
■
Cooling method : C
Marking : Type number
Weight : 2.1g
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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5/5
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