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T820-700W [STMICROELECTRONICS]

SNUBBERLESS TRIAC; 无缓冲器TRIAC
T820-700W
型号： T820-700W
厂家： ST    ST
描述：

SNUBBERLESS TRIAC
无缓冲器TRIAC

栅极 触发装置 三端双向交流开关 局域网
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T820-xxxW  
T830-xxxW  
®
SNUBBERLESS TRIAC  
FEATURES  
A2  
A1  
■
■
■
■
■
ITRMS = 8 A  
VDRM = VRRM = 600V to 800V  
EXCELLENT SWITCHING PERFORMANCES  
INSULATING VOLTAGE = 1500V(RMS)  
U.L. RECOGNIZED : E81734  
G
DESCRIPTION  
The T820/830W triacs use high performance glass  
passivated chip technology, housed in a fully  
molded plastic ISOWATT220AB package.  
The SNUBBERLESSTM concept offers suppres-  
sion of R-C network, and is suitable for applica-  
tions such as phase control and static switch on  
inductive and resistive loads.  
G
A2  
A1  
ISOWATT220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
IT(RMS)  
RMS on-state current  
(360° conduction angle)  
Tc= 95°C  
8
A
ITSM  
Non repetitive surge peak on-state current  
(Tj initial = 25°C )  
tp = 16.7 ms  
(1 cycle, 60 Hz)  
88  
A
tp = 10 ms  
100  
(1/2 cycle, 50 Hz)  
I2t  
I2t Value (half-cycle, 50 Hz)  
tp = 10 ms  
50  
20  
A2s  
dI/dt  
Critical rate of rise of on-state current  
Gate supply : IG = 500 mA  
Repetitive  
F = 50 Hz  
A/µs  
dIG /dt = 1 A/µs.  
Non Repetitive  
100  
Tstg  
Tj  
Storage temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
Tl  
Maximum lead temperature for soldering during 10s at 4.5 mm  
from case  
260  
°C  
T820 / T830-xxxW  
Symbol  
Parameter  
Unit  
600  
700  
800  
VDRM  
VRRM  
Repetitive peak off-state voltage  
Tj = 125°C  
600  
700  
800  
V
September 2001 - Ed: 1A  
1/5  
T820-xxxW / T830-xxxW  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
50  
Unit  
°C/W  
°C/W  
Rth(j-a)  
Rth(j-c)  
Junction to ambient  
Junction to case for A.C (360° conduction angle)  
3.1  
GATE CHARACTERISTICS (maximum values)  
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)  
IGM = 4 A (tp = 20 µs  
ELECTRICAL CHARACTERISTICS  
Symbol  
IGT  
Test Conditions  
Quadrant  
I-II-III  
T820  
T830  
Unit  
mA  
V
VD=12V (DC) RL=33Ω  
VD=12V (DC) RL=33Ω  
VD=VDRM RL=3.3kΩ  
Tj= 25°C  
Tj= 25°C  
Tj= 125°C  
Tj= 25°C  
MAX  
MAX  
MIN  
20  
30  
VGT  
I-II-III  
1.5  
0.2  
2
VGD  
tgt  
I-II-III  
V
VD=VDRM IG =500mA  
I-II-III  
TYP  
µs  
dlG/dt= 3Aµs  
IH *  
IT= 100mA  
Gate open  
Tj= 25°C  
Tj= 25°C  
Tj= 25°C  
Tj= 125°C  
Tj= 125°C  
MAX  
MAX  
MAX  
MAX  
MIN  
35  
50  
VTM  
*
ITM= 11A tp= 380µs  
1.5  
10  
2
V
IDRM  
IRRM  
VDRM rated  
VRRM rated  
µA  
mA  
V/µs  
dV/dt *  
Linear slope up to  
VD=67%VDRM  
200  
10  
300  
20  
Gate open  
(dV/dt)c * (dI/dt)c = 4.5 A/ms (see note)  
Tj= 125°C  
MIN  
V/µs  
* For either polarity of electrode A2 voltage with reference to electrode A1.  
Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use  
a snuber R-C network accross T820W / T830W triacs.  
2/5  
T820-xxxW / T830-xxxW  
Fig. 1: Maximum power dissipation versus RMS  
on-state current.  
Fig. 2: Correlation between maximum power dissi-  
pation and maximum allowable temperature  
(Tamb and Tcase) for different thermal resistances  
heatsink + contact.  
Tcase (oC)  
P (W)  
P(W)  
10  
10  
8
-90  
= 180o  
180 O  
-95  
= 120o  
= 90o  
8
-100  
-105  
-110  
-115  
-120  
-125  
Rth = 0 o C/W  
2.5o C/W  
5o C/W  
6
6
= 60o  
7.5o C/W  
= 30 o  
4
4
2
2
Tamb (oC)  
I
(A)  
T(RMS)  
0
0
0
1
2
3
4
5
6
7
8
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
Fig. 3: RMS on-state current versus case temper-  
ature.  
Fig. 4: Thermal transient impedance junction to  
case and junction to ambient versus pulse dura-  
tion.  
Zth/Rth  
1
I
(A)  
T(RMS)  
10  
8
Zth(j-c)  
= 180o  
0.1  
6
Zth(j-a)  
4
0.01  
2
Tcase(oC)  
tp(s)  
1E+2 5E+2  
0
1E-3  
1E+1  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
1E-2  
1E-1  
1E+0  
Fig. 5: Relative variation of gate trigger current  
and holding current versus junction temperature.  
Fig. 6: Non repetitive surge peak on-state current  
versus number of cycles.  
Igt[Tj]  
Ih[Tj]  
I
(A)  
TSM  
Igt[Tj=25 o C] Ih[Tj=25 o C]  
100  
Tj initial = 25oC  
2.6  
2.4  
2.2  
2.0  
80  
60  
40  
20  
0
Igt  
1.8  
1.6  
1.4  
1.2  
1.0  
Ih  
0.8  
0.6  
0.4  
Number of cycles  
10  
Tj(oC)  
1
100  
1000  
-40 -20  
0
20  
40  
60  
80 100 120 140  
3/5  
T820-xxxW / T830-xxxW  
Fig. 7: Non repetitive surge peak on-state current  
for a sinusoidal pulse with width : tp 10ms, and  
corresponding value of I2t.  
Fig. 8: On-state characteristics (maximum val-  
ues).  
2
2
I
(A). I t (A s)  
I
(A)  
TM  
TSM  
1000  
100  
10  
1000  
100  
10  
Tj initial = 25oC  
I
Tj initial  
25oC  
TSM  
2
I
t
Tj max  
Tj max  
Vto =0.9V  
Rt =0.048  
1
tp(ms)  
V
(V)  
TM  
0.1  
1
1
0
0.5  
1
1.5  
2
2.5  
3
3.5 4 4.5 5 5.5 6  
10  
4/5  
T820-xxxW / T830-xxxW  
DIMENSIONS  
PACKAGE MECHANICAL DATA  
ISOWATT220AB  
REF.  
Millimeters  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
4.40  
2.50  
2.50  
0.40  
0.75  
1.15  
1.15  
4.95  
2.40  
10.00  
4.60  
2.70  
2.75  
0.70  
1.00  
1.70  
1.70  
5.20  
2.70  
10.40  
0.173  
0.098  
0.098  
0.016  
0.030  
0.045  
0.045  
0.195  
0.094  
0.394  
0.181  
0.106  
0.108  
0.028  
0.039  
0.067  
0.067  
0.205  
0.106  
0.409  
D
E
F
F1  
F2  
G
G1  
H
L2  
L3  
L4  
L6  
L7  
Diam  
16.00 typ.  
0.630 typ.  
28.60  
9.80  
30.60  
10.60  
16.40  
9.30  
1.125  
0.386  
0.626  
0.354  
0.118  
1.205  
0.417  
0.646  
0.366  
0.126  
15.90  
9.00  
3.00  
3.20  
■
■
■
■
■
Cooling method : C  
Marking : Type number  
Weight : 2.1g  
Recommended torque value : 0.55 m.N.  
Maximum torque value : 0.70 m.N.  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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