STPS4045CW [STMICROELECTRONICS]

POWER SCHOTTKY RECTIFIERS; 功率肖特基整流器
STPS4045CW
型号: STPS4045CW
厂家: ST    ST
描述:

POWER SCHOTTKY RECTIFIERS
功率肖特基整流器

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中文:  中文翻译
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STPS4045CP/CW  
POWER SCHOTTKY RECTIFIERS  
MAIN PRODUCTS CHARACTERISTICS  
A1  
IF(av)  
VRRM  
2 x 20 A  
45 V  
K
A2  
Tj (max)  
VF (max)  
175 °C  
0.63 V  
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLESWITCHING LOSSES  
EXTREMELYFAST SWITCHING  
LOW THERMAL RESISTANCE  
A2  
A2  
K
K
A1  
A1  
DESCRIPTION  
SOT-93  
STPS4045CP  
TO-247  
STPS4045CW  
Dual center tap Schottky rectifier suited for  
switchmode power supply and high frequency DC  
to DC converters.  
Packaged either in SOT-93 or TO-247 this device  
is intended for use in low voltage, high frequency  
inverters, free wheeling and polarity protection  
applications.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
Unit  
VRRM  
IF(RMS)  
IF(AV)  
45  
V
A
A
Repetitivepeak reverse voltage  
30  
RMS forward current  
20  
40  
Average forward current  
Tc = 150°C  
δ = 0.5  
Per diode  
Per device  
IFSM  
IRRM  
220  
1
A
A
Surge non repetitiveforward current tp = 10 ms sinusoidal  
RepetitivePeak reverse current  
tp = 2 µs square  
F = 1kHz  
IRSM  
Tstg  
Tj  
3
- 65 to + 175  
175  
A
°C  
Non repetitive peak reverse current  
Storage temperaturerange  
tp = 100 µs square  
°C  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runawayconditionfor a diode on its own heatsink  
Rth(ja)  
June 1999 - Ed: 3B  
1/5  
STPS4045CP/CW  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth (j-c)  
Rth (c)  
When the diodes 1 and 2 are used simultaneously :  
1.5  
0.8  
°C/W  
Junction to case  
Per diode  
total  
0.1  
Coupling  
TJ(diode1) = P(diode1)x Rth(j-c) (Per diode) + P(diode2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS (per diode)  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max.  
Unit  
IR *  
200  
µA  
Reverse leakage  
current  
Tj = 25°C  
Tj = 125°C  
VR = VRRM  
11  
40  
mA  
V
VF *  
0.56 0.63  
0.94  
Forward voltage drop Tj = 125°C  
Tj = 25°C  
IF = 20 A  
IF = 40 A  
IF = 40 A  
0.7  
0.83  
Tj = 125°C  
Pulse test : * tp = 380 µs, δ < 2%  
To evaluatethe conductionlossesuse the following equation :  
2
P = 0.46 x IF(AV) + 0.0085 IF (RMS)  
Fig. 1: Average forward power dissipation  
versus average forward current (per diode).  
Fig. 2: Average current versus ambient  
temperature (per diode).  
PF(av)(W)  
IF(av)(A)  
18  
22  
Rth(j-a)=Rth(j-c)  
δ = 0.5  
20  
18  
16  
14  
16  
δ = 0.2  
14  
δ = 0.1  
12  
δ = 0.05  
δ = 1  
Rth(j-a)=15°C/W  
10  
12  
10  
8
6
4
2
8
6
T
T
4
2
tp  
=tp/T  
δ
tp  
IF(av) (A)  
=tp/T  
Tamb(°C)  
75 100  
δ
0
0
0
25  
50  
125  
150  
175  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
2/5  
STPS4045CP/CW  
Fig. 3:Nonrepetitivesurgepeakforwardcurrentversus  
overloadduration(maximum values)(perdiode).  
Fig. 4: Relative variation of thermal transient  
impedancejunction to caseversus pulse duration.  
Zth(j-c)/Rth(j-c)  
IM(A)  
200  
180  
160  
140  
1.0  
0.8  
δ = 0.5  
0.6  
120  
Tc=75°C  
100  
Tc=100°C  
0.4  
80  
Tc=125°C  
T
60  
40  
δ = 0.2  
IM  
δ = 0.1  
0.2  
t
Single pulse  
20  
δ=0.5  
tp  
tp(s)  
=tp/T  
δ
t(s)  
0.0  
1E-4  
0
1E-3  
1E-2  
1E-1  
1E+0  
1E-3  
1E-2  
1E-1  
1E+0  
Fig. 5: Reverse leakage current versus reverse  
voltage applied (typical values) (per diode).  
Fig. 6: Junction capacitance versus reverse  
voltage applied (typical values) (per diode).  
IR(µA)  
C(nF)  
5E+4  
5.0  
Tj=150°C  
1E+4  
Tj=125°C  
Tj=100°C  
1E+3  
1.0  
Tj=75°C  
1E+2  
Tj=50°C  
1E+1  
Tj=25°C  
VR(V)  
VR(V)  
0.1  
1E+0  
1
2
5
10  
20  
50  
0
5
10 15 20 25 30 35 40 45  
Fig. 7: Forward voltage drop versus forward  
current (maximum values) (per diode).  
IFM(A)  
200  
Typicalvalues  
Tj=125°C  
100  
Tj=25°C  
Tj=125°C  
10  
VFM(V)  
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
3/5  
STPS4045CP/CW  
PACKAGE MECHANICAL DATA  
SOT-93  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
C
D
D1  
E
F
4.70  
1.90  
4.90 1.185  
2.10 0.075  
0.193  
0.083  
2.50  
2.00  
0.098  
0.078  
0.50  
1.10  
0.78 0.020  
1.30 0.043  
0.031  
0.051  
F3  
F4  
G
H
L
L2  
L3  
L5  
L6  
O
1.75  
2.10  
0.069  
0.083  
10.80  
14.70  
11.10 0.425  
15.20 0.279  
12.20  
0.437  
0.598  
0.480  
0.638  
16.20  
18.0  
0.709  
1.220  
3.95  
4.00  
4.15 0.156  
4.10 0.157  
0.163  
0.161  
31.00  
4/5  
STPS4045CP/CW  
PACKAGE MECHANICAL DATA  
TO-247  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
V
A
D
E
4.85  
2.20  
0.40  
1.00  
5.15 0.191  
2.60 0.086  
0.80 0.015  
1.40 0.039  
0.203  
0.102  
0.031  
0.055  
Dia.  
V
F
F1  
F2  
F3  
F4  
G
H
L
3.00  
2.00  
0.118  
0.078  
A
H
2.00  
3.00  
2.40 0.078  
3.40 0.118  
0.094  
0.133  
10.90  
0.429  
L5  
15.45  
19.85  
3.70  
15.75 0.608  
20.15 0.781  
4.30 0.145  
0.620  
0.793  
0.169  
L1  
L2  
L
18.50  
0.728  
L2 L4  
L1  
L3 14.20  
L4  
L5  
M
V
14.80 0.559  
3.00 0.078  
3.65 0.139  
0.582  
0.118  
0.143  
34.60  
5.50  
1.362  
0.216  
F2  
F3  
F1  
2.00  
D
5°  
60°  
5°  
60°  
V2  
L3  
F4  
V2  
Dia. 3.55  
F(x3)  
M
E
G
=
=
Type  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STPS4045CP STPS4045CP  
SOT-93  
TO-247  
3.97 g.  
4.46 g.  
30  
30  
Tube  
Tube  
STPS4045CW STPS4045CW  
Cooling method: by conduction(C)  
Recommended torque value: 0.8 N.m  
Maximum torque value: 1.0 N.m.  
Epoxymeets UL94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1999 STMicroelectronics - Printed inItaly - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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