STPS40H100 [STMICROELECTRONICS]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器型号: | STPS40H100 |
厂家: | ST |
描述: | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
文件: | 总4页 (文件大小:54K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STPS40H100CW
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
IF(AV)
VRRM
2 x 20 A
100 V
Tj (max)
VF (max)
175 °C
0.61 V
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
A2
K1
A1
LOW THERMAL RESISTANCE
AVALANCHE RATED
TO-247
DESCRIPTION
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high fre-
quency DC to DC converters.
Packaged in TO-247, this device is intended for
use in high frequency inverters.
ABSOLUTE RATINGS
Symbol
(limiting values, per diode)
Parameter
Value
100
30
Unit
V
VRRM
Repetitive peak reverse voltage
IF(RMS) RMS forward current
A
IF(AV)
Average forward current
Tc = 160°C
Per diode
Per device
20
40
A
δ
= 0.5
IFSM
IRRM
IRSM
EAS
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Non repetitive avalanche energy
tp = 10 ms sinusoidal
300
1
A
A
µ
tp = 2 s F = 1kHz square
µ
tp = 100 s square
4
A
Tj = 25°C L= 60 mH
36
mJ
Ias = 3 A
°
C
Tstg
Tj
Storage temperature range
- 65 to + 175
175
Maximum operating junction temperature
Critical rate of rise of rise voltage
°C
µ
V/ s
dV/dt
10000
August 1999 - Ed: 3D
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STPS40H100CW
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°
Rth (j-c) Junction to case
Per diode
Total
0.9
0.55
C/W
Rth (c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
°
µ
A
IR *
Reverse leakage current
Tj = 25 C
VR = VRRM
10
°
Tj = 125 C
5
15
mA
V
°
VF **
Forward voltage drop
Tj = 25 C
IF = 20 A
IF = 20 A
IF = 40 A
IF = 40 A
0.73
0.61
0.85
0.72
°
Tj = 125 C
0.58
0.67
°
Tj = 25 C
°
Tj = 125 C
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.5 x IF(AV) + 0.0055 x IF (RMS)
Fig. 1:
Fig. 2:
Average forward current versus ambient
Average forward power dissipation versus
δ
average forward current (per diode).
temperature ( =0.5, per diode).
IF(av)(A)
PF(av)(W)
22
16
Rth(j-a)=Rth(j-c)
δ = 0.5
20
18
16
14
δ = 0.2
12
δ = 0.1
δ = 1
14
10
Rth(j-a)=15°C/W
δ = 0.05
12
10
8
6
4
8
6
4
T
T
2
tp
=tp/T
δ
2
0
tp
=tp/T
δ
Tamb(°C)
75 100
IF(av) (A)
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
0
25
50
125
150
175
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STPS40H100CW
Fig. 3:
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode).
Zth(j-c)/Rth(j-c)
IM(A)
400
1.0
350
0.8
300
δ = 0.5
250
0.6
Tc=50°C
200
Tc=100°C
δ = 0.2
0.4
150
δ = 0.1
T
Tc=150°C
100
IM
0.2
Single pulse
t
50
tp
=tp/T
t(s)
δ
δ=0.5
tp(s)
0
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
Fig. 6:
Junction capacitance versus reverse
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
voltage applied (maximum values, per diode).
C(nF)
IR(mA)
3.0
1E+1
F=1MHz
Tj=25°C
Tj=125°C
1E+0
Tj=100°C
1.0
1E-1
Tj=75°C
1E-2
Tj=25°C
1E-3
VR(V)
VR(V)
0.1
1E-4
1
2
5
10
20
50
100
0
10 20 30 40 50 60 70 80 90 100
Fig. 7:
Forward voltage drop versus forward cur-
rent (per diode).
IFM(A)
200
Tj=125°C
Typical values
100
10
1
Tj=125°C
Maximum values
Tj=25°C
Maximum values
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
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STPS40H100CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
V
A
D
4.85
2.20
0.40
1.00
5.15 0.191
2.60 0.086
0.80 0.015
1.40 0.039
0.203
0.102
0.031
0.055
Dia.
V
E
F
F1
F2
F3
F4
G
3.00
2.00
0.118
0.078
A
H
2.00
3.00
2.40 0.078
3.40 0.118
0.094
0.133
L5
10.90
0.429
H
15.45
19.85
3.70
15.75 0.608
20.15 0.781
4.30 0.145
0.620
0.793
0.169
L
L
L2 L4
L1
L1
L2
18.50
0.728
F2
F3
F1
L3 14.20
14.80 0.559
3.00 0.078
3.65 0.139
0.582
0.118
0.143
D
V2
L3
L4
L5
34.60
5.50
1.362
0.216
F4
F(x3)
M
V
2.00
M
E
G
5°
5°
=
=
V2
60°
60°
Dia. 3.55
Cooling method: C
Recommended torque value: 0.8 N.m.
Maximum torque value: 1 N.m.
Ordering type
Marking
Package
Weight
Base qty
30
Delivery mode
STPS40H100CW STPS40H100CW
Epoxy meets UL94,V0
TO-247
4.36g
Tube
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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