STPS40H100 [STMICROELECTRONICS]

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
STPS40H100
型号: STPS40H100
厂家: ST    ST
描述:

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
高压功率肖特基整流器

高压 高电压电源
文件: 总4页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPS40H100CW  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
K
IF(AV)  
VRRM  
2 x 20 A  
100 V  
Tj (max)  
VF (max)  
175 °C  
0.61 V  
FEATURES AND BENEFITS  
NEGLIGIBLE SWITCHING LOSSES  
LOW LEAKAGE CURRENT  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
A2  
K1  
A1  
LOW THERMAL RESISTANCE  
AVALANCHE RATED  
TO-247  
DESCRIPTION  
Dual center tap Schottky rectifier suited for  
Switch Mode Power Supplies and high fre-  
quency DC to DC converters.  
Packaged in TO-247, this device is intended for  
use in high frequency inverters.  
ABSOLUTE RATINGS  
Symbol  
(limiting values, per diode)  
Parameter  
Value  
100  
30  
Unit  
V
VRRM  
Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward current  
Tc = 160°C  
Per diode  
Per device  
20  
40  
A
δ
= 0.5  
IFSM  
IRRM  
IRSM  
EAS  
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Non repetitive avalanche energy  
tp = 10 ms sinusoidal  
300  
1
A
A
µ
tp = 2 s F = 1kHz square  
µ
tp = 100 s square  
4
A
Tj = 25°C L= 60 mH  
36  
mJ  
Ias = 3 A  
°
C
Tstg  
Tj  
Storage temperature range  
- 65 to + 175  
175  
Maximum operating junction temperature  
Critical rate of rise of rise voltage  
°C  
µ
V/ s  
dV/dt  
10000  
August 1999 - Ed: 3D  
1/4  
STPS40H100CW  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
°
Rth (j-c) Junction to case  
Per diode  
Total  
0.9  
0.55  
C/W  
Rth (c)  
Coupling  
0.1  
When the diodes 1 and 2 are used simultaneously :  
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max.  
Unit  
°
µ
A
IR *  
Reverse leakage current  
Tj = 25 C  
VR = VRRM  
10  
°
Tj = 125 C  
5
15  
mA  
V
°
VF **  
Forward voltage drop  
Tj = 25 C  
IF = 20 A  
IF = 20 A  
IF = 40 A  
IF = 40 A  
0.73  
0.61  
0.85  
0.72  
°
Tj = 125 C  
0.58  
0.67  
°
Tj = 25 C  
°
Tj = 125 C  
Pulse test : * tp = 5 ms, δ < 2%  
** tp = 380 µs, δ < 2%  
To evaluate the maximum conduction losses use the following equation :  
2
P = 0.5 x IF(AV) + 0.0055 x IF (RMS)  
Fig. 1:  
Fig. 2:  
Average forward current versus ambient  
Average forward power dissipation versus  
δ
average forward current (per diode).  
temperature ( =0.5, per diode).  
IF(av)(A)  
PF(av)(W)  
22  
16  
Rth(j-a)=Rth(j-c)  
δ = 0.5  
20  
18  
16  
14  
δ = 0.2  
12  
δ = 0.1  
δ = 1  
14  
10  
Rth(j-a)=15°C/W  
δ = 0.05  
12  
10  
8
6
4
8
6
4
T
T
2
tp  
=tp/T  
δ
2
0
tp  
=tp/T  
δ
Tamb(°C)  
75 100  
IF(av) (A)  
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0  
0
25  
50  
125  
150  
175  
2/4  
STPS40H100CW  
Fig. 3:  
Fig. 4:  
Relative variation of thermal impedance  
junction to case versus pulse duration.  
Non repetitive surge peak forward current ver-  
sus overload duration (maximum values, per diode).  
Zth(j-c)/Rth(j-c)  
IM(A)  
400  
1.0  
350  
0.8  
300  
δ = 0.5  
250  
0.6  
Tc=50°C  
200  
Tc=100°C  
δ = 0.2  
0.4  
150  
δ = 0.1  
T
Tc=150°C  
100  
IM  
0.2  
Single pulse  
t
50  
tp  
=tp/T  
t(s)  
δ
δ=0.5  
tp(s)  
0
0.0  
1E-3  
1E-3  
1E-2  
1E-1  
1E+0  
1E-2  
1E-1  
1E+0  
Fig. 6:  
Junction capacitance versus reverse  
Fig. 5:  
Reverse leakage current versus reverse  
voltage applied (typical values, per diode).  
voltage applied (maximum values, per diode).  
C(nF)  
IR(mA)  
3.0  
1E+1  
F=1MHz  
Tj=25°C  
Tj=125°C  
1E+0  
Tj=100°C  
1.0  
1E-1  
Tj=75°C  
1E-2  
Tj=25°C  
1E-3  
VR(V)  
VR(V)  
0.1  
1E-4  
1
2
5
10  
20  
50  
100  
0
10 20 30 40 50 60 70 80 90 100  
Fig. 7:  
Forward voltage drop versus forward cur-  
rent (per diode).  
IFM(A)  
200  
Tj=125°C  
Typical values  
100  
10  
1
Tj=125°C  
Maximum values  
Tj=25°C  
Maximum values  
VFM(V)  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
3/4  
STPS40H100CW  
PACKAGE MECHANICAL DATA  
TO-247  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
V
A
D
4.85  
2.20  
0.40  
1.00  
5.15 0.191  
2.60 0.086  
0.80 0.015  
1.40 0.039  
0.203  
0.102  
0.031  
0.055  
Dia.  
V
E
F
F1  
F2  
F3  
F4  
G
3.00  
2.00  
0.118  
0.078  
A
H
2.00  
3.00  
2.40 0.078  
3.40 0.118  
0.094  
0.133  
L5  
10.90  
0.429  
H
15.45  
19.85  
3.70  
15.75 0.608  
20.15 0.781  
4.30 0.145  
0.620  
0.793  
0.169  
L
L
L2 L4  
L1  
L1  
L2  
18.50  
0.728  
F2  
F3  
F1  
L3 14.20  
14.80 0.559  
3.00 0.078  
3.65 0.139  
0.582  
0.118  
0.143  
D
V2  
L3  
L4  
L5  
34.60  
5.50  
1.362  
0.216  
F4  
F(x3)  
M
V
2.00  
M
E
G
5°  
5°  
=
=
V2  
60°  
60°  
Dia. 3.55  
Cooling method: C  
Recommended torque value: 0.8 N.m.  
Maximum torque value: 1 N.m.  
Ordering type  
Marking  
Package  
Weight  
Base qty  
30  
Delivery mode  
STPS40H100CW STPS40H100CW  
Epoxy meets UL94,V0  
TO-247  
4.36g  
Tube  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
4/4  

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