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STPS40L15 [STMICROELECTRONICS]

LOW DROP OR-ing POWER SCHOTTKY DIODE; 低压降的OR-ing功率肖特基二极管
STPS40L15
型号： STPS40L15
厂家： ST    ST
描述：

LOW DROP OR-ing POWER SCHOTTKY DIODE
低压降的OR-ing功率肖特基二极管

肖特基二极管
文件： 总5页 (文件大小：87K)
中文：  中文翻译
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®
STPS40L15CW/CT  
LOW DROP OR-ing POWER SCHOTTKY DIODE  
MAJOR PRODUCT CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 20 A  
15 V  
K
Tj (max)  
VF (max)  
150°C  
0.33 V  
FEATURES AND BENEFITS  
VERY LOW FORWARD VOLTAGE DROP FOR  
LESS POWER DISSIPATION AND REDUCED  
HEATSINK SIZE  
REVERSE VOLTAGE SUITED TO OR-ing OF  
3V, 5V and 12V RAILS  
A2  
A2  
K
K
A1  
A1  
DESCRIPTION  
Dual center tap schottky rectifier packaged in  
TO-220AB and TO-247, this device is especially  
intended for use as OR-ing diode in fault tolerant  
power supply equipments.  
TO-220AB  
STPS40L15CT  
TO-247  
STPS40L15CW  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
15  
V
IF(RMS)  
IF(AV)  
30  
A
A
RMS forward current  
40  
Average forward current  
Tcase = 140°C Total  
δ = 1  
20  
Per diode  
IFSM  
IRRM  
IRSM  
Tstg  
310  
A
A
Surge non repetitive forward current tp = 10 ms Sinusoidal  
Peak repetitive reverse current tp = 2 µs F = 1kHz  
2
3
A
Non repetitive peak reverse current tp = 100 µs  
Storage temperature range  
- 65 to + 150  
150  
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(j−a)  
November 1999 - Ed: 4A  
1/5  
STPS40L15CW/CT  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth(j-c)  
Per diode  
Total  
1.6  
0.85  
0.1  
°C/W  
Junction to case  
Rth (c)  
Coupling  
°C/W  
STATIC ELECTRICAL CHARACTERISTICS (Per diode)  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max.  
Unit  
IR *  
6
mA  
Reverse leakage  
current  
Tj = 25°C  
Tj = 100°C  
VR = VRRM  
200  
500  
0.41  
0.52  
0.33  
0.50  
VF *  
V
Forward voltage drop Tj = 25°C  
Tj = 25°C  
IF = 19 A  
IF = 40 A  
IF = 19 A  
IF = 40 A  
0.28  
0.42  
Tj = 125°C  
Tj = 125°C  
Pulse test : * tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation :  
2
P = 0.18 x IF(AV) + 0.008 IF (RMS)  
Fig. 1: Average forward power dissipation versus  
average forward current (per diode).  
Fig. 2: Average forward current versus ambient  
temperature (δ=1, per diode).  
IF(av)(A)  
PF(av)(W)  
8
22  
Rth(j-a)=Rth(j-c)  
δ = 0.1  
20  
18  
16  
14  
12  
10  
8
6
4
2
0
δ = 0.5  
7
δ = 0.05  
δ = 0.2  
δ = 1  
6
5
4
3
2
1
0
Rth(j-a)=15°C/W  
T
T
tp  
=tp/T  
δ
Tamb(°C)  
tp  
=tp/T  
IF(av) (A)  
δ
0
2
4
6
8
10 12 14 16 18 20 22  
0
25  
50  
75  
100  
125  
150  
2/5  
STPS40L15CW/CT  
Fig. 3: Non repetitive surge peak forward current  
versus overload duration (maximum values per  
diode).  
Fig. 4: Relative variation of thermal impedance  
junction to case versus pulse duration (per diode).  
Zth(j-c)/Rth(j-c)  
IM(A)  
250  
1.0  
200  
0.8  
δ = 0.5  
150  
0.6  
Tc=50°C  
100  
0.4  
Tc=75°C  
δ = 0.2  
T
IM  
Tc=110°C  
δ = 0.1  
50  
0.2  
t
δ
=0.5  
tp (s)  
t(s)  
tp  
=tp/T  
δ
Single pulse  
0
0.0  
1.0E-4  
1E-3  
1E-2  
1E-1  
1E+0  
1.0E-3  
1.0E-2  
1.0E-1  
1.0E+0  
Fig. 6: Junction capacitance versus reverse  
voltage applied (typical values per diode).  
Fig. 5: Reverse leakage current versus reverse  
voltage applied (typical values per diode).  
IR(mA)  
C(nF)  
5E+2  
5.0  
F=1MHz  
Tj=25°C  
Tj=100°C  
1E+2  
1.0  
1E+1  
Tj=25°C  
1E+0  
VR(V)  
VR(V)  
0.1  
1E-1  
1
2
5
10  
20  
0
2
4
6
8
10  
12  
14  
16  
Fig. 7: Forward voltage drop versus forward  
current (typical values per diode).  
Fig. 8: Forward voltage drop versus forward  
current (typical maximum per diode).  
IFM(A)  
IFM(A)  
200  
200.0  
Tj=100°C  
100.0  
100  
Tj=150°C  
Tj=25°C  
10.0  
Tj=125°C  
10  
Tj=75°C  
1.0  
VFM(V)  
VFM(V)  
1
0.1  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
3/5  
STPS40L15CW/CT  
PACKAGE MECHANICAL DATA  
TO-220AB  
DIMENSIONS  
Millimeters Inches  
REF.  
Min.  
Max.  
Min.  
Max.  
A
H2  
A
C
D
E
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10  
16.4 typ.  
13  
2.65  
15.25  
6.20  
3.50  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.181  
0.051  
0.107  
0.027  
0.034  
0.066  
0.066  
0.202  
0.106  
0.409  
Dia  
C
L5  
L7  
L6  
L2  
F2  
D
F1  
L9  
L4  
F
0.645 typ.  
M
G1  
14  
0.511  
0.104  
0.600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.259  
0.154  
E
2.95  
15.75  
6.60  
3.93  
G
2.6 typ.  
0.102 typ.  
Diam.  
3.75  
3.85  
0.147  
0.151  
Cooling method: C  
Recommended torque value: 0.55 m.N  
Maximum torque value: 0.70 m.N  
4/5  
STPS40L15CW/CT  
PACKAGE MECHANICAL DATA  
TO-247  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
V
A
D
E
F
F1  
F2  
4.85  
2.20  
0.40  
1.00  
5.15 0.191  
2.60 0.086  
0.80 0.015  
1.40 0.039  
0.203  
0.102  
0.031  
0.055  
Dia.  
V
A
H
3.00  
2.00  
0.118  
0.078  
F3 2.00  
F4 3.00  
G
2.40 0.078  
3.40 0.118  
0.094  
0.133  
L5  
10.90  
0.429  
L
H
L
15.45  
19.85  
15.75 0.608  
20.15 0.781  
4.30 0.145  
0.620  
0.793  
0.169  
L2 L4  
L1  
L1 3.70  
L2  
F2  
F3  
F1  
18.50  
0.728  
L3 14.20  
L4  
L5  
14.80 0.559  
3.00 0.078  
3.65 0.139  
0.582  
0.118  
0.143  
D
V2  
L3  
F4  
34.60  
5.50  
1.362  
0.216  
F(x3)  
M
V
2.00  
M
E
G
5°  
60°  
5°  
60°  
=
=
V2  
Dia. 3.55  
Cooling method: C  
Recommended torque value: 0.8 m.N  
Maximum torque value: 1.0 m.N  
Ordering type  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STPS40L15CW STPS40L15CW  
STPS40L15CT STPS40L15CT  
Epoxy meets UL94,V0  
TO-247  
4.4 g.  
2g  
30  
50  
Tube  
Tube  
TO-220AB  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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