STP7N95K3 [STMICROELECTRONICS]
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET; N沟道950 V， 1.1欧姆， 7.2 A， TO- 220 ， TO- 220FP ， TO- 247齐纳保护SuperMESH3功率MOSFET
| 型号： | STP7N95K3 |
| 厂家： | 
ST |
| 描述： | N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET |
| 文件： | 总15页 (文件大小：943K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STF7N95K3
STP7N95K3, STW7N95K3
N-channel 950 V, 1.1 Ω, 7.2 A, TO-220, TO-220FP, TO-247
Zener-protected SuperMESH3™ Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
Pw
3
STF7N95K3
STP7N95K3
STW7N95K3
950 V < 1.35 Ω 7.2 A 35 W
950 V < 1.35 Ω 7.2 A 150 W
950 V < 1.35 Ω 7.2 A 150 W
2
1
TO-247
3
■ 100% avalanche tested
2
1
■ Extremely large avalanche performance
■ Gate charge minimized
3
TO-220
2
1
TO-220FP
■ Very low intrinsic capacitances
■ Zener-protected
Application
Figure 1.
Internal schematic diagram
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimized vertical structure. In
addition to pushing on-resistance significantly
down, special attention has been taken to ensure
a very good dynamic performances coupled with
a very large avalanche capability for the most
demanding application.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF7N95K3
STP7N95K3
STW7N95K3
7N95K3
7N95K3
7N95K3
TO-220FP
TO-220
Tube
Tube
Tube
TO-247
January 2009
Rev 1
1/15
www.st.com
15
Contents
STF7N95K3, STP7N95K3, STW7N95K3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STF7N95K3, STP7N95K3, STW7N95K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220, TO-247 TO-220FP
VGS
ID
Gate-source voltage
30
V
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
7.2
4.5
7.2 (1)
4.5 (1)
28.8 (1)
35
ID
A
(2)
IDM
28.8
150
A
PTOT
IAR
Total dissipation at TC = 25 °C
W
Max current during repetitive or single pulse
9
A
avalanche (pulse width limited by TJMAX
Single pulse avalanche energy (3)
Derating factor
)
EAS
220
mJ
1.12
0.24
W/°C
V/ns
dv/dt (4) Peak diode recovery voltage slope
6
Insulation withstand voltage (RMS) from all three
leads to external heat sink
VISO
2000
V
(t=1 s;TC=25 °C)
Tj
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Limited by package
2. Pulse width limited by safe operating area
3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V
4. ISD ≤ 7.2 A, di/dt = 100 A/µs, VPeak < V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
TO-220 TO-247 TO-220FP Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
0.83
3.57
62.5
°C/W
°C/W
°C
62.5
50
300
Tl
Maximum lead temperature for soldering purpose
3/15
Electrical characteristics
STF7N95K3, STP7N95K3, STW7N95K3
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
950
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
50
Gate-body leakage
IGSS
VGS
=
20 V
10
5
µA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on
3
4
VGS = 10 V, ID = 3.6 A
1.1
1.35
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Forward
transconductance
(1)
gfs
VDS = 15 V, ID = 3.6 A
5
S
Input capacitance
Ciss
Coss
Crss
1031
79
pF
pF
pF
VDS = 100 V, f = 1 MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
0.9
Equivalent
capacitance time
related
(2)
Co(tr)
VDS = 0 to 760 V, VGS = 0
60
36
pF
pF
Ω
Equivalent
capacitance energy
related
(3)
Co(er)
VDS = 0 to 760 V, VGS = 0
f=1 MHz Gate DC Bias=0 Test
RG
Gate input resistance signal level = 20 mV open
drain
2.4
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 760 V, ID = 7.2 A,
VGS = 10 V
34
6
nC
nC
nC
(see Figure 20)
20
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
3. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/15
STF7N95K3, STP7N95K3, STW7N95K3
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
14
9
ns
ns
ns
ns
VDD = 475 V, ID = 3.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Turn-off-delay time
Fall time
36
23
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
7.2
A
A
(1)
ISDM
Source-drain current (pulsed)
28.8
(2)
VSD
Forward on voltage
ISD = 7.2 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
450
6
ns
µC
A
ISD = 7.2 A, di/dt = 100A/µs
Qrr
VDD = 60 V (see Figure 24)
IRRM
28
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.2 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 24)
550
8
ns
µC
A
Qrr
IRRM
28
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
Gate-source breakdown
voltage
(1)
BVGSO
Igs= 1mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/15
Electrical characteristics
STF7N95K3, STP7N95K3, STW7N95K3
Thermal impedance for TO-220
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Figure 5.
Figure 7.
AM01576v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
100
10
10µs
100µs
1ms
1
10ms
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
AM01577v1
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-247
Thermal impedance for TO-247
AM01578v1
I
D
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
10
VDS(V)
1
100
6/15
STF7N95K3, STP7N95K3, STW7N95K3
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM01579v1
AM01580v1
ID
ID
(A)
(A)
VGS=10V
VDS=15V
9
12
8
10
8
7
6
7V
5
4
6
3
4
2
6V
5V
2
0
1
0
0
2
VDS(V)
25
8
10 VGS(V)
0
10
4
6
15
5
20
Figure 10. Normalized B
vs temperature Figure 11. Static drain-source on resistance
VDSS
AM01581v1
AM01586v1
BVDSS
(norm)
RDS(on)
(Ω)
ID = 3.6 A
VGS =10 V
1.4
1.10
1.00
0.90
1.3
1.2
1.1
1.0
0.80
0.70
-50
0
T
J
(°C)
ID(A)
50
1.5
100
2
2.5
3
3.5
4.5
5
4
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
AM01583v1
AM01584v1
VGS
C
(V)
(pF)
VDD=760 V
700
600
500
400
300
200
12
VGS=10 V
ID=7.2 A
1000
100
Ciss
10
8
Coss
Crss
6
10
1
4
2
100
0
0.1
0.1
0
20
40
100
0
10
30
Qg(nC)
1
10
VDS(V)
7/15
Electrical characteristics
STF7N95K3, STP7N95K3, STW7N95K3
Figure 14. Output capacitance stored energy Figure 15. Normalized on resistance vs
temperature
AM03244v1
AM01582v1
ECoss
RDS(on)
(µJ)
(norm)
14
3.0
12
2.5
2.0
1.5
10
8
6
1.0
0.5
0
4
2
0
200
400
-50
600
VDS(V)
TJ(°C)
0
800
0
50
100
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized gate threshold voltage
vs temperature
AM01587v1
AM01585v1
V
(V)
SD
VGS(th)
(norm)
TJ=-50°C
1.2
0.9
1.1
1.0
0.9
0.8
0.7
0.6
TJ=25°C
0.8
0.7
0.6
0.5
TJ=150°C
0.5
0.4
1
7
-50
2
3
4
5
6
8
ISD(A)
0
50
TJ(°C)
150
100
Figure 18. Maximum avalanche energy vs
temperature
AM01588v1
EAS
(mJ)
ID=9 A
220
200
180
160
140
120
100
80
60
40
20
0
0
120
140 T
20
40
60 80 100
J(°C)
8/15
STF7N95K3, STP7N95K3, STW7N95K3
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
µF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
9/15
Package mechanical data
STF7N95K3, STP7N95K3, STW7N95K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/15
STF7N95K3, STP7N95K3, STW7N95K3
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/15
Package mechanical data
STF7N95K3, STP7N95K3, STW7N95K3
TO-220FP mechanical data
mm
Typ.
Dim.
Min.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_J
12/15
STF7N95K3, STP7N95K3, STW7N95K3
Package mechanical data
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
13/15
Revision history
STF7N95K3, STP7N95K3, STW7N95K3
5
Revision history
Table 9.
Date
27-Jan-2009
Document revision history
Revision
Changes
1
First release
14/15
STF7N95K3, STP7N95K3, STW7N95K3
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