STP7NB40 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET; N - 沟道增强型MOSFET的PowerMESH
| 型号： | STP7NB40 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| 文件： | 总4页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP7NB40
STP7NB40FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP7NB40
STP7NB40FP
400 V
400 V
< 0.9 Ω
< 0.9 Ω
7.0 A
4.4 A
■
■
■
■
■
TYPICAL RDS(on) = 0.75 Ω
EXTREMELY HIGH dV/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
2
DESCRIPTION
1
1
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP7NB40FP
Unit
STP7NB40
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
400
400
± 30
V
V
V
o
Drain Current (continuous) at Tc = 25 C
7
4.4
2.8
A
o
ID
Drain Current (continuous) at Tc = 100 C
4.4
28
A
I
DM(•)
Drain Current (pulsed)
28
A
o
Ptot
Total Dissipation at Tc = 25 C
100
0.8
4.5
35
W
Derating Factor
0.28
4.5
W/oC
V/ns
V
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
2000
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/4
January 1998
STP7NB40/FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case
Max
1.25
3.57
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
7
A
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 50 V)
300
mJ
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
400
V
I
D = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
50
µA
µA
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 30 V
ON ( )
Symbol
Parameter
Test Conditions
DS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
3
4
5
V
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 3.5 A
Resistance
0.75
0.9
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
7
A
V
GS = 10 V
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3.5 A
Min.
Typ.
Max.
Unit
gfs ( )
2.5
4.2
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS = 25 V f = 1 MHz VGS = 0
705
132
17
720
175
25
pF
pF
pF
2/4
STP7NB40/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 200 V ID = 3.5 A
11.5
7.5
16
11
ns
ns
Rise Time
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 320 V ID = 7 A VGS = 10 V
21
7.3
8.5
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD = 320 V ID = 7 A
9.5
9
16.5
15
14
25
ns
ns
ns
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
7
28
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 7 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
300
2
ns
I
SD = 7 A di/dt = 100 A/µs
VDD = 100 V
Tj = 150 oC
(see test circuit, figure 5)
Qrr
µC
IRRM
Reverse Recovery
Current
13.7
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/4
STP7NB40/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
4/4
相关型号：
STP7NC70Z
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
STP7NC70ZFP
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
STP7NC80Z
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
STP7NC80ZFP
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明