STP7NB60 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET; N - 沟道增强型MOSFET的PowerMESH
| 型号： | STP7NB60 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| 文件： | 总9页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP7NB60
STP7NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
TYPE
VDSS
RDS(on)
ID
STP7NB60
STP7NB60FP
600 V
600 V
< 1.2 Ω
< 1.2 Ω
7.2 A
4.1 A
■
■
■
■
■
TYPICAL RDS(on) = 1.0 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
1
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP7NB60FP
Unit
STP7NB60
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
600
600
± 30
V
V
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
V
7.2
4.5
4.1
2.6
A
ID
A
IDM(• )
Ptot
28.8
125
1.0
28.8
40
A
Total Dissipation at Tc = 25 oC
W
Derating Factor
0.32
4.5
W/oC
V/ns
V
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
4.5
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
2000
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
March 1998
STP7NB60/FP
THERMAL DATA
TO-220
TO220-FP
Rthj-case Thermal Resistance Junction-case
Max
1.0
3.13
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
7.2
A
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
580
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwisespecified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
50
µA
µA
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 30 V
ON ( )
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
4
Max.
5
Unit
V
Gate Threshold Voltage
3
Static Drain-source On VGS = 10V ID = 3.6 A
Resistance
1.0
1.2
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
7.2
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3.6 A
Min.
Typ.
Max.
Unit
gfs ( )
4
5.3
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1250
165
16
1625
223
22
pF
pF
pF
2/9
STP7NB60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 300 V ID = 3.6 A
18
8
27
12
ns
ns
Rise Time
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480 V ID = 7.2 A VGS = 10 V
30
9.9
13.3
45
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480 V ID = 7.2 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
8
5
15
12
8
23
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
7.2
28.8
A
A
VSD ( ) Forward On Voltage
ISD = 7.2 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
530
4.5
17
ns
ISD = 7.2 A di/dt = 100 A/µs
VDD = 100 V
(see test circuit, figure 5)
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP7NB60/FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP7NB60/FP
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
Normalized Gate Threshold Voltagevs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP7NB60/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP7NB60/FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP7NB60/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/9
STP7NB60/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
9/9
相关型号：
STP7NC70Z
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
STP7NC70ZFP
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
STP7NC80Z
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
STP7NC80ZFP
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
STMICROELECTR
STP7NK30Z
N-CHANNEL 300V - 0.80 OHM - 5A TO-220/TO-220FP Zener-Protected SuperMESH?Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明