STP75NS04Z [STMICROELECTRONICS]
N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET; N沟道钳位 - 7mohm - 80A - TO- 220完全保护MESH覆盖III功率MOSFET
| 型号： | STP75NS04Z |
| 厂家： | 
ST |
| 描述： | N-channel Clamped - 7mohm - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET |
| 文件： | 总12页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP75NS04Z
N-channel Clamped - 7mΩ - 80A - TO-220
Fully protected MESH Overlay™ III Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STP75NS04Z
Clamped
< 11mΩ
80A
■ Low capacitance and gate charge
■ 100% avalanche tested
3
2
■ 175°C maximum junction temperature
1
TO-220
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of a new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encoured in
power tools. Any other application requiring extra
ruggedness is also recommended.
Internal schematic diagram
Applications
■ Switching application
■ Power tools
Order codes
Part number
Marking
Package
Packaging
STP75NS04Z
P75NS04Z
TO-220
Tube
June 2006
Rev 1
1/12
www.st.com
12
Contents
STP75NS04Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP75NS04Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VDG
VGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (VGS = 0)
Clamped
Clamped
Clamped
80
V
V
Gate-source voltage
V
(1)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain gate current (continuos)
Gate source current (continuos)
A
ID
ID
63
A
IDG
IGS
50
mA
mA
A
50
(2)
Drain current (pulsed)
320
IDM
PTOT
Total dissipation at TC = 25°C
Derating factor
110
0.73
8
W
W/°C
kV
VESD
Gate-source ESD (HBM-C=100pF, R=1.5KΩ)
Tj
Operating junction temperature
Storage temperature
-55 to 175
°C
Tstg
1. Current limited by wire bonding
2. Pulse with limited by safe operating area
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case Max
1.36
62.5
300
°C/W
°C/W
°C
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Table 3.
Symbol
Avalanche data
Parameter
Value
Unit
Single pulse avalanche energy (starting Tj=25°C,
ID=IAR, VDD=25V)
EAS
470
mJ
3/12
Electrical characteristics
STP75NS04Z
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test condictions
ID = 1mA, VGS= 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
33
V
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 16V
1
µA
Gate body leakage current
(VDS = 0)
IGSS
VGS = 10V
2
µA
Gate threshold breakdown
voltage
VGSS
VGS(th)
RDS(on)
IGS= 100µA
18
2
V
V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 40A
Gate threshold voltage
3
7
4
Static drain-source on
resistance
11
mΩ
Table 5.
Symbol
Dynamic
Parameter
Test condictions
Min. Typ. Max. Unit
(1)
VDS =15V, ID = 15A
Forward transconductance
50
S
gfs
Input capacitance
Ciss
Coss
Crss
1860
628
pF
pF
pF
VDS = 25V, f = 1 MHz,
VGS =0
Output capacitance
Reverse transfer
capacitance
196
Qg
Qgs
Qgd
VDD= 20V, ID= 80 A,
VGS= 10 V
Total gate charge
Gate-source charge
Gate-drain charge
50
14
16
nC
nC
nC
(see Figure 13)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/12
STP75NS04Z
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Switching on/off
Parameter
Symbol
Test condictions
VDD= 20V, ID = 40A
RG= 4.7 Ω, VGS= 10V,
(see Figure 12)
td(on)
tr
Turn-on delay time
Rise time
16
ns
ns
248
V
DD= 20V, ID = 40A
td(off)
tf
Turn-off delay time
Fall time
53
85
ns
ns
RG= 4.7 Ω, VGS= 10V,
(see Figure 12)
Table 7.
Symbol
Source drain diode
Parameter
Test condictions
Min. Typ. Max. Unit
ISD
Source-drain current
80
A
A
(1)
Source-drain current (pulsed)
320
ISDM
(2)
I
SD=80A, VGS=0
Forward on Voltage
1.5
V
VSD
trr
ISD=80A, di/dt = 100A/µs,
VDD=30V, Tj=150°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
53
91
ns
nC
A
Qrr
3.4
(see Figure 17)
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STP75NS04Z
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Normalized B
vs temperature
Figure 6. Static drain-source on resistance
VDSS
6/12
STP75NS04Z
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
STP75NS04Z
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/12
STP75NS04Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STP75NS04Z
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
10/12
STP75NS04Z
Revision history
5
Revision history
Table 8.
Date
06-Jun-2006
Revision history
Revision
Changes
1
First release
11/12
STP75NS04Z
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