STP50NE08 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET; N - 沟道增强型单一特征尺寸功率MOSFET
| 型号： | STP50NE08 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| 文件： | 总8页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP50NE08
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP50NE08
80 V
<0.024 Ω
50 A
■
■
■
■
■
TYPICAL RDS(on) = 0.020 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100 oC
APPLICATION ORIENTED
CHARACTERIZATION
3
2
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size
1
”
TO-220
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
80
V
V
VDGR
VGS
ID
80
± 20
V
50
A
ID
35
A
I
DM(• )
200
A
Ptot
Total Dissipation at Tc = 25 oC
150
W
Derating Factor
1
6
W/oC
V/ns
oC
oC
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
-65 to 175
Tj
Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
(1) ISD ≤ 50 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, T ≤ TJMAX
j
1/8
March 1998
STP50NE08
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Max
Typ
1
62.5
0.5
oC/W
oC/W
oC/W
oC
Thermal Resistance Junction-ambient
Rthj-amb
Rthc-sink Thermal Resistance Case-sink
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
50
A
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
300
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Parameter
Test Conditions
ID = 250 µA VGS = 0
Min.
Typ.
Max.
Unit
80
V
IDSS
VDS = Max Rating
1
10
µA
µA
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125
oC
IGSS
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 20 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2
3
4
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 25 A
Resistance
0.020 0.024
mΩ
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
50
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =25 A
Min.
Typ.
Max.
Unit
gfs ( )
20
35
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
3850
480
105
5100
650
140
pF
pF
pF
2/8
STP50NE08
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 40 V
RG =4.7 Ω
ID = 25 A
VGS = 10 V
37
95
50
130
ns
ns
Rise Time
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 64 V ID = 50 A VGS = 10 V
85
19
28
110
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 64 V ID = 50 A
RG =4.7 Ω VGS = 10 V
(see test circuit, figure 5)
12
30
50
17
40
68
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
50
200
A
A
VSD ( ) Forward On Voltage
ISD = 50 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
100
400
8
ns
ISD = 50 A
VDD = 30 V
(see test circuit, figure 5)
di/dt = 100 A/µs
Tj = 150 oC
Qrr
nC
A
IRRM
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STP50NE08
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STP50NE08
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STP50NE08
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STP50NE08
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/8
STP50NE08
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
8/8
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