STP50NE10 [STMICROELECTRONICS]
N - CHANNEL 100V - 0.021ohm - 50A TO-220 STripFET POWER MOSFET; N - CHANNEL 100V - 0.021ohm - 50A TO- 220的STripFET功率MOSFET
| 型号： | STP50NE10 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 100V - 0.021ohm - 50A TO-220 STripFET POWER MOSFET |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP50NE10
N - CHANNEL 100V - 0.021Ω - 50A TO-220
STripFET POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP50NE10
100 V
<0.027 Ω
50 A
■
■
■
■
■
TYPICAL RDS(on) = 0.021 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100 oC
APPLICATIONORIENTED
CHARACTERIZATION
3
2
1
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
TO-220
Size ” strip-based
process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
reproducibility.
a
remarkable
manufacturing
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
100
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
V
V
100
± 20
50
V
o
Drain Current (continuous) at Tc = 25 C
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
A
ID
35
A
I
DM(• )
200
A
o
Ptot
Total Dissipation at Tc = 25 C
150
W
Derating Factor
1
W/oC
V/ns
oC
oC
dv/dt (1) Peak Diode Recovery voltage slope
6
Tstg
Storage Temperature
-65 to 175
Tj
Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( ) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1
1/8
April 1999
STP50NE10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Max
Typ
1
62.5
0.5
oC/W
oC/W
oC/W
oC
Thermal Resistance Junction-ambient
Rthj-amb
Rthc-sink Thermal Resistance Case-sink
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
50
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 50 V)
300
mJ
o
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250
A
VGS = 0
100
V
µ
IDSS
IGSS
VDS = Max Rating
1
10
A
µ
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS
=
20 V
100
±
nA
±
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
3
4
RDS(on)
Static Drain-source On VGS = 10V ID = 25 A
Resistance
0.021 0.027
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
50
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =25 A
Min.
Typ.
Max.
Unit
gfs ( )
20
35
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
4350
500
175
6000
675
238
pF
pF
pF
2/8
STP50NE10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 50 V
G =4.7
ID = 25 A
VGS = 10 V
25
100
34
135
ns
ns
Rise Time
R
Ω
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V ID = 50 A VGS = 10 V
123
24
47
166
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 80 V ID = 50 A
RG =4.7 Ω VGS = 10 V
(see test circuit, figure 5)
45
35
65
61
48
88
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
50
200
A
A
VSD ( ) Forward On Voltage
ISD = 50 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 50 A
VDD = 30 V
(see test circuit, figure 5)
di/dt = 100 A/ s
Tj = 150 C
155
815
10.5
210
ns
µ
o
Qrr
1100
15
nC
A
IRRM
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
µ
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STP50NE10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
4/8
STP50NE10
Normalized Gate ThresholdVoltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/8
STP50NE10
Fig. 1:
Fig. 2:
UnclampedInductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
STP50NE10
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/8
STP50NE10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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