STP52N25M5
更新时间：2024-09-18 12:36:11
描述：N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET
概述
规格参数
数据手册
替代型号STP52N25M5 概述
N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET N沟道250 V ， 0.055 I© ， 28 A， TO- 220 MDmeshTM V功率MOSFET MOS管 功率场效应晶体管
STP52N25M5 规格参数
| 生命周期： | Obsolete | 零件包装代码： | TO-220AB |
| 包装说明： | FLANGE MOUNT, R-PSFM-T3 | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.81 | 其他特性： | ULTRA LOW-ON RESISTANCE |
| 雪崩能效等级（Eas）： | 230 mJ | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 250 V | 最大漏极电流 (ID)： | 28 A |
| 最大漏源导通电阻： | 0.065 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码： | TO-220AB | JESD-30 代码： | R-PSFM-T3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 极性/信道类型： | N-CHANNEL | 最大脉冲漏极电流 (IDM)： | 112 A |
| 表面贴装： | NO | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
STP52N25M5 数据手册
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PDF下载STP52N25M5
N-channel 250 V, 0.055 Ω, 28 A, TO-220
MDmeshTM V Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
STP52N25M5
250 V
< 0.065 Ω
28 A
■ Amongst the best R
* area
DS(on)
3
2
1
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
TO-220
■ 100% avalanche tested
Application
■ Switching applications
Figure 1.
Internal schematic diagram
Description
$ꢅꢆꢇ
This devices is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
'ꢅꢁꢇ
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
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Table 1.
Order code
STP52N25M5
Device summary
Marking
Package
TO-220
Packaging
52N25M5
Tube
July 2010
Doc ID 17776 Rev 1
1/12
www.st.com
12
Contents
STP52N25M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 17776 Rev 1
STP52N25M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
Gate- source voltage
25
28
V
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
ID
18
A
(1)
IDM
112
110
A
PTOT
Total dissipation at TC = 25 °C
W
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
IAR
10
A
Single pulse avalanche energy
EAS
230
15
mJ
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt(2) Peak diode recovery voltage slope
V/ns
TJ
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Pulse width limited by safe operating area.
2. ISD ≤ 28 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-pcb max
1.14
62.5
300
°C/W
°C/W
°C/W
TJ
Maximum lead temperature for soldering purpose
Doc ID 17776 Rev 1
3/12
Electrical characteristics
STP52N25M5
2
Electrical characteristics
(Tcase =25°C unless otherwise specified).
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
250
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
25 V
100
5
nA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on-
3
4
VGS = 10 V, ID = 14 A
0.055 0.065
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
1770
110
17
pF
Output capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
-
-
pF
pF
Reverse transfer
capacitance
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
(1)
Co(er)
-
93
pF
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
(2)
Co(tr)
-
-
178
2
-
-
pF
Rg
Gate input resistance f=1 MHz open drain
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 200 V, ID = 28 A,
VGS = 10 V
47
10
24
nC
nC
nC
-
-
(see Figure 14)
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS.
4/12
Doc ID 17776 Rev 1
STP52N25M5
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Switching times
Parameter
Symbol
Test conditions
td(V)
tr(V)
tf(i)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
40
18
64
82
ns
ns
ns
ns
VDD = 125 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
-
-
tc(off)
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
ISD
Source-drain current
28
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
112
(2)
VSD
Forward on voltage
ISD = 28 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V, TJ = 25 °C
(see Figure 15)
168
1.2
ns
µC
A
Qrr
-
-
IRRM
14.5
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 15)
196
1.7
17
ns
µC
A
Qrr
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17776 Rev 1
5/12
Electrical characteristics
STP52N25M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
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Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
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Figure 6.
Gate charge vs gate-source voltage Figure 7.
Static drain-source on resistance
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6/12
Doc ID 17776 Rev 1
STP52N25M5
Electrical characteristics
Figure 8.
Capacitance variations
Figure 9.
Output capacitance stored energy
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Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
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vs temperature
VDSS
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Doc ID 17776 Rev 1
7/12
Test circuits
STP52N25M5
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/12
Doc ID 17776 Rev 1
STP52N25M5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 17776 Rev 1
9/12
Package mechanical data
STP52N25M5
TO-220 type A mechanical data
mm
Dim
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.95
2.65
0015988_Rev_S
10/12
Doc ID 17776 Rev 1
STP52N25M5
Revision history
5
Revision history
Table 8.
Date
29-Jul-2010
Document revision history
Revision
Changes
1
First release
Doc ID 17776 Rev 1
11/12
STP52N25M5
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12/12
Doc ID 17776 Rev 1
STP52N25M5 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| FDP33N25 | FAIRCHILD | 250V N-Channel MOSFET | 功能相似 |
|
| FDPF51N25YDTU | FAIRCHILD | N-Channel UniFETTM MOSFET 250V, 51A, 60m&Omega;, TO220, MOLDED, 3LD, FULL PACK, EIAJ S | 功能相似 |
|
STP52N25M5 相关器件
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|
| STP53N05 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 53A I(D) | TO-220 | 获取价格 |
|
| STP53N06 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 53A I(D) | TO-220 | 获取价格 |
|
| STP53N08 | STMICROELECTRONICS | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | 获取价格 |
|
| STP54 | ETC | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-218AA | 获取价格 |
|
| STP55 | ETC | TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB | 获取价格 |
|
| STP5508 | SEME-LAB | HIGH POWER NPN SILICON TRANSISTOR | 获取价格 |
|
| STP55N05L | STMICROELECTRONICS | 55A, 50V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | 获取价格 |
|
| STP55N05LFI | STMICROELECTRONICS | 30A, 50V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN | 获取价格 |
|
| STP55N06 | STMICROELECTRONICS | 55A, 60V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 获取价格 |
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