STP52N25M5 [STMICROELECTRONICS]

N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET; N沟道250 V , 0.055 I© , 28 A, TO- 220 MDmeshTM V功率MOSFET
STP52N25M5
型号: STP52N25M5
厂家: ST    ST
描述:

N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET
N沟道250 V , 0.055 I© , 28 A, TO- 220 MDmeshTM V功率MOSFET

文件: 总12页 (文件大小:480K)
中文:  中文翻译
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STP52N25M5  
N-channel 250 V, 0.055 , 28 A, TO-220  
MDmeshTM V Power MOSFET  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
STP52N25M5  
250 V  
< 0.065 Ω  
28 A  
Amongst the best R  
* area  
DS(on)  
3
2
1
High dv/dt capability  
Excellent switching performance  
Easy to drive  
TO-220  
100% avalanche tested  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
$ꢅꢆꢇ  
This devices is an N-channel MDmesh™ V Power  
MOSFET based on an innovative proprietary  
vertical process technology, which is combined  
with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢇ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Order code  
STP52N25M5  
Device summary  
Marking  
Package  
TO-220  
Packaging  
52N25M5  
Tube  
July 2010  
Doc ID 17776 Rev 1  
1/12  
www.st.com  
12  
Contents  
STP52N25M5  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
2/12  
Doc ID 17776 Rev 1  
STP52N25M5  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
VGS  
ID  
Gate- source voltage  
25  
28  
V
A
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
ID  
18  
A
(1)  
IDM  
112  
110  
A
PTOT  
Total dissipation at TC = 25 °C  
W
Avalanche current, repetitive or not-repetitive  
(pulse width limited by TJ max)  
IAR  
10  
A
Single pulse avalanche energy  
EAS  
230  
15  
mJ  
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)  
dv/dt(2) Peak diode recovery voltage slope  
V/ns  
TJ  
Operating junction temperature  
Storage temperature  
-55 to 150  
°C  
Tstg  
1. Pulse width limited by safe operating area.  
2. ISD 28 A, di/dt 400 A/µs, VPeak < V(BR)DSS.  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
Rthj-case Thermal resistance junction-case max  
Rthj-amb Thermal resistance junction-pcb max  
1.14  
62.5  
300  
°C/W  
°C/W  
°C/W  
TJ  
Maximum lead temperature for soldering purpose  
Doc ID 17776 Rev 1  
3/12  
Electrical characteristics  
STP52N25M5  
2
Electrical characteristics  
(Tcase =25°C unless otherwise specified).  
Table 4.  
Symbol  
On /off states  
Parameter  
Test conditions  
ID = 1 mA, VGS = 0  
DS = Max rating  
Min.  
Typ.  
Max. Unit  
Drain-source  
breakdown voltage  
V(BR)DSS  
250  
V
Zero gate voltage  
V
1
µA  
µA  
IDSS  
drain current (VGS = 0) VDS = Max rating, TC=125 °C  
100  
Gate-body leakage  
IGSS  
VGS  
=
25 V  
100  
5
nA  
V
current (VDS = 0)  
VGS(th)  
RDS(on)  
Gate threshold voltage VDS = VGS, ID = 100 µA  
Static drain-source on-  
3
4
VGS = 10 V, ID = 14 A  
0.055 0.065  
resistance  
Table 5.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Input capacitance  
Ciss  
Coss  
Crss  
1770  
110  
17  
pF  
Output capacitance  
VDS = 50 V, f = 1 MHz,  
VGS = 0  
-
-
-
pF  
pF  
Reverse transfer  
capacitance  
Equivalent output  
capacitance energy  
related  
VGS = 0, VDS = 0 to 80%  
V(BR)DSS  
(1)  
Co(er)  
-
93  
pF  
Equivalent output  
capacitance time  
related  
VGS = 0, VDS = 0 to 80%  
V(BR)DSS  
(2)  
Co(tr)  
-
-
178  
2
-
-
pF  
Rg  
Gate input resistance f=1 MHz open drain  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 200 V, ID = 28 A,  
VGS = 10 V  
47  
10  
24  
nC  
nC  
nC  
-
-
(see Figure 14)  
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0  
to 80% VDSS.  
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0  
to 80% VDSS.  
4/12  
Doc ID 17776 Rev 1  
STP52N25M5  
Electrical characteristics  
Min. Typ. Max Unit  
Table 6.  
Switching times  
Parameter  
Symbol  
Test conditions  
td(V)  
tr(V)  
tf(i)  
Voltage delay time  
Voltage rise time  
Current fall time  
Crossing time  
40  
18  
64  
82  
ns  
ns  
ns  
ns  
VDD = 125 V, ID = 14 A,  
RG = 4.7 , VGS = 10 V  
(see Figure 13)  
-
-
tc(off)  
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ. Max Unit  
ISD  
Source-drain current  
28  
A
A
-
-
(1)  
ISDM  
Source-drain current (pulsed)  
112  
(2)  
VSD  
Forward on voltage  
ISD = 28 A, VGS = 0  
1.6  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 28 A, di/dt = 100 A/µs  
VDD= 60 V, TJ = 25 °C  
(see Figure 15)  
168  
1.2  
ns  
µC  
A
Qrr  
-
-
IRRM  
14.5  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 28 A, di/dt = 100 A/µs  
VDD= 60 V TJ = 150 °C  
(see Figure 15)  
196  
1.7  
17  
ns  
µC  
A
Qrr  
IRRM  
1. Pulse width limited by safe operating area.  
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 17776 Rev 1  
5/12  
Electrical characteristics  
STP52N25M5  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area  
Figure 3.  
Thermal impedance  
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)$  
ꢅ!ꢇ  
ꢁꢀꢀ  
ꢁꢀ  
ꢁꢀ—S  
ꢁꢀꢀ—S  
ꢁMS  
4Jꢊꢁꢄꢀ #  
4Cꢊꢆꢄ #  
ꢁꢀMS  
3INGLE  
PULSE  
ꢀꢉꢁ  
ꢁꢀ  
6$3ꢅ6ꢇ  
ꢀꢉꢁ  
ꢁꢀꢀ  
Figure 4.  
Output characteristics  
Figure 5.  
Transfer characteristics  
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!-ꢀꢃꢀꢄꢃVꢁ  
)$  
ꢅ!ꢇ  
)$  
ꢅ!ꢇ  
6'3ꢊꢁꢀ6  
ꢋꢀ  
ꢋꢀ  
ꢄꢀ  
ꢂꢀ  
ꢈꢀ  
ꢆꢀ  
ꢃ6  
ꢋ6  
ꢄꢀ  
ꢂꢀ  
ꢈꢀ  
ꢆꢀ  
ꢄ6  
ꢁꢀ  
ꢁꢀ  
6$3ꢅ6ꢇ  
ꢁꢀ 6'3ꢅ6ꢇ  
ꢁꢀ  
Figure 6.  
Gate charge vs gate-source voltage Figure 7.  
Static drain-source on resistance  
!-ꢀꢃꢀꢄꢌVꢁ  
!-ꢀꢃꢀꢄꢍVꢁ  
6'3  
ꢅ6ꢇ  
2$3ꢅONꢇ  
ꢅ/HMꢇ  
6'3  
6$$ꢊꢆꢀꢀ6  
)$ꢊꢆꢌ!  
6'3ꢊꢁꢀ6  
ꢁꢆ  
ꢁꢀ  
ꢆꢀꢀ  
ꢁꢄꢀ  
ꢀꢉꢀꢃꢁꢄ  
6$3  
ꢀꢉꢀꢋꢁꢄ  
ꢁꢀꢀ  
ꢀꢉꢀꢄꢁꢄ  
ꢀꢉꢀꢂꢁꢄ  
ꢀꢉꢀꢈꢁꢄ  
ꢄꢀ  
ꢆꢀ  
ꢆꢄ  
ꢁꢀ  
ꢁꢄ  
ꢆꢀ  
ꢂꢀ  
ꢄꢀ  
1GꢅN#ꢇ  
)$ꢅ!ꢇ  
ꢁꢀ  
ꢈꢀ  
6/12  
Doc ID 17776 Rev 1  
STP52N25M5  
Electrical characteristics  
Figure 8.  
Capacitance variations  
Figure 9.  
Output capacitance stored energy  
!-ꢀꢃꢀꢋꢀVꢁ  
!-ꢀꢃꢀꢋꢁVꢁ  
#
%OSS  
ꢅP&ꢇ  
—*ꢇ  
ꢆꢉꢄ  
#ISS  
ꢁꢀꢀꢀ  
ꢆꢉꢀ  
ꢁꢀꢀ  
ꢁꢉꢄ  
ꢁꢉꢀ  
#OSS  
#RSS  
ꢁꢀ  
ꢀꢉꢄ  
ꢀꢉꢁ  
ꢁꢀꢀ  
ꢁꢀꢀ  
ꢆꢀꢀ  
ꢁꢀ  
6$3ꢅ6ꢇ  
ꢄꢀ  
ꢁꢄꢀ  
6$3ꢅ6ꢇ  
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs  
vs temperature temperature  
!-ꢀꢃꢀꢋꢆVꢁ  
!-ꢀꢃꢀꢋꢈVꢁ  
6'3ꢅTHꢇ  
ꢅNORMꢇ  
2$3ꢅONꢇ  
ꢅNORMꢇ  
ꢁꢉꢁꢀ  
ꢁꢉꢀꢀ  
ꢀꢉꢍꢀ  
ꢆꢉꢁ  
ꢁꢉꢍ  
ꢁꢉꢃ  
ꢁꢉꢄ  
ꢁꢉꢈ  
ꢁꢉꢁ  
ꢀꢉꢍ  
ꢀꢉꢌꢀ  
ꢀꢉꢃꢀ  
ꢀꢉꢃ  
ꢀꢉꢄ  
ꢎꢄꢀ  
ꢎꢆꢄ  
ꢎꢄꢀ  
ꢎꢆꢄ  
ꢆꢄ ꢄꢀ ꢃꢄ  
4*ꢅ #ꢇ  
ꢆꢄ ꢄꢀ ꢃꢄ  
4*ꢅ #ꢇ  
ꢁꢀꢀ  
ꢁꢀꢀ  
Figure 12. Normalized B  
vs temperature  
VDSS  
!-ꢀꢃꢀꢋꢂVꢁ  
"6$33  
ꢅNORMꢇ  
ꢁꢉꢀꢃ  
ꢁꢉꢀꢄ  
ꢁꢉꢀꢈ  
ꢁꢉꢀꢁ  
ꢀꢉꢍꢍ  
ꢀꢉꢍꢃ  
ꢀꢉꢍꢄ  
ꢀꢉꢍꢈ  
ꢎꢄꢀ  
ꢎꢆꢄ  
ꢆꢄ ꢄꢀ ꢃꢄ  
4*ꢅ #ꢇ  
ꢁꢀꢀ  
Doc ID 17776 Rev 1  
7/12  
Test circuits  
STP52N25M5  
3
Test circuits  
Figure 13. Switching times test circuit for  
resistive load  
Figure 14. Gate charge test circuit  
VDD  
12V  
47kΩ  
1kΩ  
100nF  
2200  
3.3  
µF  
RL  
µF  
IG=CONST  
VDD  
100Ω  
Vi=20V=VGMAX  
D.U.T.  
VD  
RG  
VGS  
2200  
µF  
D.U.T.  
VG  
2.7kΩ  
47kΩ  
PW  
1kΩ  
PW  
AM01468v1  
AM01469v1  
Figure 15. Test circuit for inductive load  
switching and diode recovery times  
Figure 16. Unclamped inductive load test  
circuit  
L
A
A
A
B
D
FAST  
DIODE  
L=100µH  
VD  
G
2200  
µF  
D.U.T.  
B
3.3  
µF  
VDD  
S
3.3  
µF  
1000  
µF  
B
VDD  
25  
ID  
D
G
RG  
S
Vi  
D.U.T.  
Pw  
AM01470v1  
AM01471v1  
Figure 17. Unclamped inductive waveform  
Figure 18. Switching time waveform  
ton  
tdon  
toff  
tdoff  
V(BR)DSS  
tr  
tf  
VD  
90%  
10%  
90%  
IDM  
10%  
VDS  
ID  
0
0
VDD  
VDD  
90%  
VGS  
10%  
AM01472v1  
AM01473v1  
8/12  
Doc ID 17776 Rev 1  
STP52N25M5  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com. ECOPACK  
is an ST trademark.  
Doc ID 17776 Rev 1  
9/12  
Package mechanical data  
STP52N25M5  
TO-220 type A mechanical data  
mm  
Dim  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
b1  
c
D
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
28.90  
3.75  
3.85  
2.95  
2.65  
0015988_Rev_S  
10/12  
Doc ID 17776 Rev 1  
STP52N25M5  
Revision history  
5
Revision history  
Table 8.  
Date  
29-Jul-2010  
Document revision history  
Revision  
Changes  
1
First release  
Doc ID 17776 Rev 1  
11/12  
STP52N25M5  
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12/12  
Doc ID 17776 Rev 1  

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