STP03D200 [STMICROELECTRONICS]
2kV NPN Darlington transistor; 2kV的NPN达林顿晶体管
| 型号： | STP03D200 |
| 厂家： | 
ST |
| 描述： | 2kV NPN Darlington transistor |
| 文件： | 总7页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP03D200
2kV NPN Darlington transistor
Preliminary Data
Features
■ Extra high voltage capability
■ High gain characteristic
Application
■ Active start-up network in 3 phase S.M.P.S.
3
(see application note AN2454)
2
1
Description
TO-220
The STP03D200 is made by two extra high
voltage NPN transistors in Darlington
configuration housed in a single package. The
resulting device shows high gain performance.
Figure 1. Internal schematic diagram
Table 1.
Device summary
Order code
STP03D200
Marking
Package
Packaging
P03D200
TO-220
Tube
October 2007
Rev 1
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
7
Electrical ratings
STP03D200
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
2000
1200
20
V
V
V
100
mA
mA
W
ICM
Collector peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
200
PTOT
Tstg
TJ
40
-65 to 150
150
°C
°C
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
RthJ-C
Thermal resistance junction-case max
3.13
°C/W
2/7
STP03D200
Electrical characteristics
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
VCB = 2000 V
Min. Typ. Max. Unit
Collector cut-off current
(IE = 0)
ICBO
100
100
µA
µA
V
Collector cut-off current
(IB = 0)
ICEO
VCE = 1200 V
IC = 1 mA
Collector-emitter
breakdown voltage (IB = 0)
V(BR)CEO
1200
20
Emitter-base voltage
(IC = 0)
IE = 10 µA
V
VEBO
Collector-emittersaturation
voltage
(1)
IC = 50 mA; IB = 500 µA
IC = 50 mA; IB = 500 µA
2
2
V
V
VCE(sat)
Base-emitter saturation
voltage
(1)
VBE(sat)
IC = 20 mA;
IC = 30 mA;
VCE = 10 V
400
hFE
DC current gain
VCE = 10 V 350
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
3/7
Package mechanical data
STP03D200
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
4/7
STP03D200
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
5/7
Revision history
STP03D200
4
Revision history
Table 5.
Date
22-Oct-2007
Document revision history
Revision
Changes
1
Initial release.
6/7
STP03D200
Revision history
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