STN2NE06 [STMICROELECTRONICS]
N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET; N沟道60V - 0.18ohm - 2A - SOT- 223的STripFET功率MOSFET
| 型号： | STN2NE06 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET |
| 文件： | 总8页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN2NE06
N-CHANNEL 60V - 0.18Ω - 2A - SOT-223
STripFET POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STN2NE06
60 V
< 0.25 Ω
2 A
■
■
■
■
■
TYPICAL RDS(on) = 0.18 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATIONORIENTED
2
CHARACTERIZATION
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size ” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
60
V
V
60
± 20
V
o
Drain Current (continuous) at Tc = 25 C
2
A
o
ID
Drain Current (continuous) at Tc = 100 C
1.3
A
I
DM(• )
Drain Current (pulsed)
8
2.5
A
o
Ptot
Total Dissipation at Tc = 25 C
W
Derating Factor
0.02
6
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
-65 to 150
150
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( ) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1
1/8
April 1999
STN2NE06
THERMAL DATA
Rthj-pcb Thermal Resistance Junction-PC Board
Rthj-amb Thermal Resistance Junction-ambient
(Surface Mounted)
Max
Max
50
60
oC/W
oC/W
Tl
Maximum Lead Temperature For Soldering Purpose
260
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 25 V)
20
mJ
o
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250
A
VGS = 0
60
V
µ
IDSS
IGSS
VDS = Max Rating
1
10
A
µ
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS
=
20 V
100
±
nA
±
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
RDS(on)
Static Drain-source On VGS = 10 V ID = 1 A
Resistance
0.18
0.25
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
2
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1 A
Min.
Typ.
Max.
Unit
gfs ( )
1.8
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 V
310
45
12.5
420
61
17
pF
pF
pF
2/8
STN2NE06
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 30 V
RG = 4.7
ID = 1 A
VGS = 10 V
9
10
13
13.5
ns
ns
Rise Time
Ω
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 40 V
ID = 2 A VGS = 10 V
12
5.1
2.7
17
7
4
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
VDD = 48 V ID = 2 A
RG = 4.7 VGS = 10 V
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
4.5
5
12
6
7
16
ns
ns
ns
Ω
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
2
8
A
A
VSD ( ) Forward On Voltage
ISD = 2 A VGS = 0
1.2
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 2 A
VDD = 30 V
di/dt = 100 A/ s
40
50
ns
µ
o
Tj = 150 C
Qrr
nC
IRRM
Reverse Recovery
Current
2.5
Α
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
µ
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STN2NE06
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
4/8
STN2NE06
Normalized Gate ThresholdVoltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/8
STN2NE06
Fig. 1:
Fig. 2:
UnclampedInductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
STN2NE06
SOT-223 MECHANICAL DATA
mm
mils
TYP.
90.6
181.1
15.7
25.6
63
DIM.
MIN.
2.27
4.57
0.2
TYP.
2.3
MAX.
2.33
4.63
0.6
MIN.
89.4
179.9
7.9
MAX.
91.7
a
b
4.6
182.3
23.6
c
0.4
d
0.63
1.5
0.65
1.6
0.67
1.7
24.8
59.1
26.4
e1
e4
f
66.9
0.32
3.1
12.6
2.9
0.67
6.7
3
114.2
26.4
118.1
27.6
122.1
28.7
g
0.7
7
0.73
7.3
l1
l2
L
263.8
137.8
248
275.6
137.8
255.9
287.4
145.7
263.8
3.5
3.5
6.5
3.7
6.3
6.7
L
l2
d
a
e4
c
b
f
C
C
B
E
g
P008B
7/8
STN2NE06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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