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STN2NF06L [STMICROELECTRONICS]

N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET; N沟道60V - 0.1欧姆 - 2A SOT- 223 STripFET⑩ II功率MOSFET
STN2NF06L
型号： STN2NF06L
厂家： ST    ST
描述：

N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET
N沟道60V - 0.1欧姆 - 2A SOT- 223 STripFET⑩ II功率MOSFET

晶体 晶体管 开关 脉冲 光电二极管
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STN2NF06L  
N-CHANNEL 60V - 0.1 Ω - 2A SOT-223  
STripFET™ II POWER MOSFET  
V
R
I
TYPE  
DSS  
DS(on)  
D
STN2NF06L  
60 V  
<0.12 Ω  
2 A  
■
■
■
■
■
TYPICAL R (on) = 0.1 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
2
AVALANCHE RUGGED TECHNOLOGY  
LOW THRESHOLD DRIVE  
3
2
1
DESCRIPTION  
SOT-223  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
DC MOTOR CONTROL (DISK DRIVES, etc.)  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
60  
± 16  
2
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R  
Gate- source Voltage  
= 20 kΩ)  
GS  
V
DGR  
V
GS  
V
I
D
Drain Current (continuous) at T = 25°C  
A
C
I
Drain Current (continuous) at T = 100°C  
1.2  
8
A
D
C
I
(•)  
Drain Current (pulsed)  
A
DM  
P
(1)  
Total Dissipation at T = 25°C  
3
W
tot  
C
Derating Factor  
8
W/°C  
V/ns  
mJ  
°C  
°C  
(2)  
(3)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
6
dv/dt  
E
200  
AS  
T
stg  
-55 to 150  
T
Max. Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
(2) I  
≤2A, di/dt ≤100A/µs, V  
≤ V  
DD  
, T ≤ T  
JMAX  
SD  
DD  
(BR)DSS  
= 30V  
j
(1)  
o
Related to Rthj -l  
(3) Starting T = 25 C, I = 2A, V  
j
D
November 2002  
1/8  
.
STN2NF06L  
THERMAL DATA  
2
Rthj-pcb  
Rthj-pcb  
50  
90  
260  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-PCB(1 inch copper board)  
Thermal Resistance Junction-PCB (min. footprint)  
Maximum Lead Temperature For Soldering Purpose  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
= 250 µA, V = 0  
Min.  
Typ.  
Max.  
Unit  
I
V
60  
V
D
GS  
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
= Max Rating T = 125°C  
Zero Gate Voltage  
I
1
10  
µA  
µA  
DS  
DSS  
Drain Current (V  
= 0)  
V
GS  
DS  
C
Gate-body Leakage  
V
GS  
= ± 16 V  
I
±100  
nA  
GSS  
Current (V  
= 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
GS(th)  
V
= V  
GS  
I
D
= 250 µA  
Gate Threshold Voltage  
1
V
DS  
V
V
= 10 V  
I
I
= 1 A  
= 1 A  
R
Static Drain-source On  
Resistance  
0.1  
0.12  
0.12  
0.14  
Ω
Ω
GS  
D
DS(on)  
=
5 V  
GS  
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 15 V = 1 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
DS  
I
D
g
Forward Transconductance  
3
S
fs  
C
V
= 25V f = 1 MHz V = 0  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
360  
55  
25  
pF  
pF  
pF  
iss  
DS  
C
oss  
C
rss  
2/8  
STN2NF06L  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 30 V = 1 A  
Min.  
Typ.  
Max.  
Unit  
V
R
I
D
t
Turn-on Time  
Rise Time  
10  
20  
ns  
ns  
DD  
= 4.7 Ω  
d(on)  
V
= 4.5 V  
t
r
G
GS  
(Resistive Load, Figure 3)  
Q
g
V
= 48 V I = 2 A V = 5 V  
GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
5.6  
1.2  
2.6  
7.6  
nC  
nC  
nC  
DD  
D
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
= 30 V = 1 A  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
I
t
Turn-off Delay Time  
Fall Time  
17  
6
ns  
ns  
DD  
= 4.7Ω,  
D
d(off)  
V
GS  
= 4.5 V  
t
f
G
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
SD  
Source-drain Current  
Source-drain Current (pulsed)  
2
8
A
A
( )  
•
I
SDM  
(*)  
I
I
= 2 A  
V
= 0  
V
Forward On Voltage  
1.3  
V
SD  
SD  
GS  
SD  
t
rr  
= 2 A  
di/dt = 100A/µs  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
28  
31  
2.2  
ns  
nC  
A
Q
V
= 20 V  
T = 150°C  
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedance Junction-lead  
3/8  
STN2NF06L  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/8  
STN2NF06L  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage vs Temperature.  
.
.
5/8  
STN2NF06L  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/8  
STN2NF06L  
SOT-223 MECHANICAL DATA  
mm  
mils  
TYP.  
90.6  
181.1  
15.7  
25.6  
63  
DIM.  
MIN.  
2.27  
4.57  
0.2  
TYP.  
2.3  
MAX.  
2.33  
4.63  
0.6  
MIN.  
89.4  
179.9  
7.9  
MAX.  
91.7  
a
b
4.6  
182.3  
23.6  
c
0.4  
d
0.63  
1.5  
0.65  
1.6  
0.67  
1.7  
24.8  
59.1  
26.4  
e1  
e4  
f
66.9  
0.32  
3.1  
12.6  
2.9  
0.67  
6.7  
3
114.2  
26.4  
118.1  
27.6  
122.1  
28.7  
g
0.7  
7
0.73  
7.3  
l1  
l2  
L
263.8  
137.8  
248  
275.6  
137.8  
255.9  
287.4  
145.7  
263.8  
3.5  
3.5  
6.5  
3.7  
6.3  
6.7  
L
l2  
d
a
e4  
c
b
f
C
C
B
E
g
P008B  
7/8  
STN2NF06L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
8/8  

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