STN2NE10L [STMICROELECTRONICS]
N-CHANNEL 100V - 0.33ohm - 2A SOT-223 STripFET POWER MOSFET; N沟道100V - 0.33ohm - 2A SOT- 223的STripFET功率MOSFET型号: | STN2NE10L |
厂家: | ST |
描述: | N-CHANNEL 100V - 0.33ohm - 2A SOT-223 STripFET POWER MOSFET |
文件: | 总8页 (文件大小:87K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STN2NE10L
N-CHANNEL 100V - 0.33Ω - 2A SOT-223
STripFET POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STN2NE10L
100 V
< 0.4 Ω
1.8 A
■
■
■
■
■
TYPICAL RDS(on) = 0.33 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100 % AVALANCHE TESTED
LOW THRESHOLD DRIVE
2
3
DESCRIPTION
2
1
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size ” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
100
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k
Gate-source Voltage
V
V
VDGR
VGS
)
100
Ω
± 20
1.8
V
o
ID
Drain Current (continuous) at Tc = 25 C
A
o
ID
Drain Current (continuous) at Tc = 100 C
1.3
A
IDM(• )
Ptot
Drain Current (pulsed)
7.2
A
o
Total Dissipation at Tc = 25 C
2.5
W
Derating Factor
0.02
6
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
-65 to 150
150
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( ) ISD ≤ 7.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1
1/8
March 2000
STN2NE10L
THERMAL DATA
Rthj-pcb Thermal Resistance Junction-PC Board
Rthj-amb Thermal Resistance Junction-ambient
(Surface Mounted)
Max
Max
50
60
oC/W
oC/W
Tl
Maximum Lead Temperature For Soldering Purpose
260
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1.8
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 25 V)
20
mJ
o
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250
A
VGS = 0
100
V
µ
IDSS
IGSS
VDS = Max Rating
1
10
A
µ
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS
=
20 V
100
±
nA
±
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
1
1.7
2.5
V
RDS(on)
Static Drain-source On VGS = 10 V ID = 1 A
0.33
0.38
0.4
0.45
Ω
Ω
Resistance
VGS = 5 V
ID = 1 A
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
1.8
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1 A
Min.
Typ.
Max.
Unit
gfs ( )
1
3
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 V
345
45
20
pF
pF
pF
2/8
STN2NE10L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
RG = 4.7
ID = 3.5 A
VGS = 5 V
7
17
ns
ns
Ω
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V ID = 7 A VGS = 5 V
10
5
4
14
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 80 V
RG =4.7
ID = 3.5 A
VGS = 5 V
22
8
ns
ns
Ω
(Resistive Load, see fig. 3)
VDD = 80 V ID = 7 A
RG = 4.7 VGS = 5 V
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
8
9
19
ns
ns
ns
Ω
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current
(pulsed)
2
8
A
A
•
VSD ( ) Forward On Voltage
ISD = 2 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7 A
VDD = 30 V
(see test circuit, fig. 5)
di/dt = 100 A/ s
75
190
5
ns
µ
TJ = 150 oC
Qrr
C
µ
IRRM
A
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
µ
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STN2NE10L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
4/8
STN2NE10L
Normalized Gate ThresholdVoltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/8
STN2NE10L
Fig. 1:
Fig. 2:
UnclampedInductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
STN2NE10L
SOT-223 MECHANICAL DATA
mm
mils
TYP.
90.6
181.1
15.7
25.6
63
DIM.
MIN.
2.27
4.57
0.2
TYP.
2.3
MAX.
2.33
4.63
0.6
MIN.
89.4
179.9
7.9
MAX.
91.7
a
b
4.6
182.3
23.6
c
0.4
d
0.63
1.5
0.65
1.6
0.67
1.7
24.8
59.1
26.4
e1
e4
f
66.9
0.32
3.1
12.6
2.9
0.67
6.7
3
114.2
26.4
118.1
27.6
122.1
28.7
g
0.7
7
0.73
7.3
l1
l2
L
263.8
137.8
248
275.6
137.8
255.9
287.4
145.7
263.8
3.5
3.5
6.5
3.7
6.3
6.7
L
l2
d
a
e4
c
b
f
C
C
B
E
g
P008B
7/8
STN2NE10L
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of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
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