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STF34NM60ND [STMICROELECTRONICS]

N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247; N沟道600 V ， 0.097欧姆（典型值） ， 29一FDmesh II功率MOSFET （具有快速二极管）的D2PAK ， TO- 220FP ， TO- 220和TO- 247
STF34NM60ND
型号： STF34NM60ND
厂家： ST    ST
描述：

N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
N沟道600 V ， 0.097欧姆（典型值） ， 29一FDmesh II功率MOSFET （具有快速二极管）的D2PAK ， TO- 220FP ， TO- 220和TO- 247

晶体 二极管 晶体管 功率场效应晶体管 开关 脉冲 PC 局域网
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STB34NM60ND, STF34NM60ND,  
STP34NM60ND, STW34NM60ND  
N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET  
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247  
Datasheet — production data  
Features  
TAB  
VDSS @TJ  
max.  
RDS(on)  
max.  
Order codes  
ID  
3
1
STB34NM60ND  
STF34NM60ND  
STP34NM60ND  
STW34NM60ND  
3
2
1
2
650 V  
0.110 Ω  
29 A  
D PAK  
TO-220FP  
TAB  
■ The world’s best RDS(on) in TO-220 amongst  
the fast recovery diode devices  
3
■ 100% avalanche tested  
2
3
1
2
■ Low input capacitance and gate charge  
■ Low gate input resistance  
1
TO-220  
TO-247  
■ Extremely high dv/dt and avalanche  
capabilities  
Figure 1.  
Internal schematic diagram  
Applications  
■ Switching applications  
$ꢅꢆꢇ 4!"ꢈ  
Description  
These FDmesh™ II Power MOSFETs with  
intrinsic fast-recovery body diode are produced  
using the second generation of MDmesh™  
technology. Utilizing a new strip-layout vertical  
structure, these revolutionary devices feature  
extremely low on-resistance and superior  
switching performance. They are ideal for bridge  
topologies and ZVS phase-shift converters.  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
D2PAK  
Packaging  
STB34NM60ND  
STF34NM60ND  
STP34NM60ND  
STW34NM60ND  
34NM60ND  
34NM60ND  
34NM60ND  
34NM60ND  
Tape and reel  
Tube  
TO-220FP  
TO-220  
Tube  
TO-247  
Tube  
October 2012  
Doc ID 18099 Rev 5  
1/22  
This is information on a product in full production.  
www.st.com  
22  
 
Contents  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
2/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
D2PAK, TO-220, TO-247  
TO-220FP  
VDS  
VGS  
Drain-source voltage  
600  
25  
V
V
Gate- source voltage  
Drain current (continuous) at  
TC = 25 °C  
ID  
29  
18  
29(1)  
18(1)  
A
A
Drain current (continuous) at  
TC = 100 °C  
ID  
(2)  
IDM  
Drain current (pulsed)  
116  
190  
116(1)  
40  
A
PTOT  
VISO  
Total dissipation at TC = 25 °C  
W
Insulation withstand voltage (RMS)  
from all three leads to external heat  
sink (t=1 s;TC=25 °C)  
2500  
V
dv/dt(3) Peak diode recovery voltage slope  
40  
- 55 to 150  
150  
V/ns  
°C  
Tstg  
TJ  
Storage temperature  
Max. operating junction temperature  
1. Current limited by package  
2. Pulse width limited by safe operating area  
3.  
I
≤ 29 A, di/dt ≤ 600 A/µs, V = 80% V  
,V  
< V  
(BR)DSS  
SD  
DD  
(BR)DSS DSPeak  
Table 3.  
Symbol  
Thermal data  
Parameter  
TO-220 TO-247 D2PAK TO-220FP Unit  
Rthj-case Thermal resistance junction-case max  
0.66  
50  
3.1  
°C/W  
°C/W  
°C/W  
Thermal resistance junction-ambient  
Rthj-amb  
max  
62.5  
62.5  
(1)  
Rthj-pcb  
Thermal resistance junction-pcb max  
30  
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-  
repetitive (pulse width limited by TJ max)  
IAR  
7
A
Single pulse avalanche energy  
EAS  
345  
mJ  
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)  
Doc ID 18099 Rev 5  
3/22  
 
 
 
Electrical characteristics  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
2
Electrical characteristics  
(TCASE = 25 °C unless otherwise specified)  
Table 5.  
Symbol  
On/off states  
Parameter  
Drain-source  
Test conditions  
ID = 1 mA  
Min. Typ. Max. Unit  
V(BR)DSS  
600  
V
breakdown voltage (VGS = 0)  
Zero gate voltage  
V
DS = 600 V  
1
µA  
µA  
IDSS  
drain current (VGS = 0)  
VDS = 600 V, TC=125 °C  
100  
Gate-body leakage  
current (VDS = 0)  
IGSS  
VGS  
=
25 V  
100  
5
nA  
V
VGS(th) Gate threshold voltage  
VDS = VGS, ID = 250 µA  
VGS = 10 V, ID = 14.5 A  
3
4
Static drain-source on  
resistance  
RDS(on)  
0.097 0.110  
Ω
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min. Typ. Max.  
Unit  
Input capacitance  
Output capacitance  
Ciss  
Coss  
Crss  
2785  
pF  
pF  
pF  
V
DS = 50 V, f = 1 MHz,  
-
-
-
168  
5
-
-
-
VGS = 0  
Reverse transfer  
capacitance  
Equivalent output  
capacitance  
(1)  
Coss eq.  
VGS = 0, VDS = 0 to 480 V  
VDD =300 V, ID = 14.5 A  
43.8  
pF  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
30  
ns  
ns  
ns  
ns  
R
G = 4.7 Ω, VGS = 10 V  
53.4  
111  
61.8  
Turn-off delay time  
Fall time  
(see Figure 18 and 23)  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 480 V, ID = 29 A,  
VGS = 10 V,  
80.4  
16  
nC  
nC  
nC  
-
-
-
(see Figure 19)  
41.4  
Rg  
Gate input resistance  
f=1 MHz , open drain  
2.87  
-
Ω
1.  
C
. is defined as a constant equivalent capacitance giving the same charging time as C  
when V  
oss eq  
oss  
DS  
increases from 0 to 80% V  
DSS  
4/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
ISD  
Source-drain current  
29  
A
A
-
-
(1)  
ISDM  
Source-drain current (pulsed)  
116  
(2)  
VSD  
Forward on voltage  
ISD = 29 A, VGS = 0  
1.6  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
175  
1.4  
16  
ns  
µC  
A
I
SD = 29 A, VDD = 60 V  
di/dt=100 A/µs  
Qrr  
-
-
(see Figure 20)  
IRRM  
I
SD = 29 A,VDD = 60 V  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
255  
2.6  
20  
ns  
µC  
A
di/dt=100 A/µs,  
Qrr  
TJ = 150 °C  
IRRM  
(see Figure 20)  
1. Pulse width limited by safe operating area  
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.  
Doc ID 18099 Rev 5  
5/22  
Electrical characteristics  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area for TO-220FP  
Figure 3.  
Thermal impedance for TO-220FP  
AM09018v1  
I
D
(A)  
Tj=150°C  
Tc=25°C  
Single pulse  
100  
10  
1
10µs  
100µs  
1ms  
10ms  
0.1  
0.01  
10  
VDS(V)  
0.1  
1
100  
Figure 4.  
Safe operating area for TO-220 and Figure 5.  
D2PAK  
Thermal impedance for TO-220 and  
D2PAK  
AM09017v1  
I
D
(A)  
Tj=150°C  
Tc=25°C  
Single pulse  
100  
10  
10µs  
100µs  
1ms  
10ms  
1
0.1  
10  
VDS(V)  
0.1  
1
100  
Figure 6.  
Safe operating area for TO-247  
Figure 7.  
Thermal impedance for TO-247  
AM09019v1  
I
D
(A)  
Tj=150°C  
Tc=25°C  
Single pulse  
100  
10µs  
100µs  
10  
1ms  
10ms  
1
0.1  
10  
VDS(V)  
0.1  
1
100  
6/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Electrical characteristics  
Figure 8.  
Output characteristics  
Figure 9.  
Transfer characteristics  
AM08229v1  
AM00889v1  
I
D
(A)  
I
D
(A)  
80  
70  
VDS=20V  
80  
VGS=10V  
7V  
6V  
70  
60  
50  
40  
30  
20  
60  
50  
40  
30  
20  
5V  
10  
0
10  
0
5
2
0
10  
15  
20  
25  
30  
V
DS(V)  
0
4
6
8
10  
VGS(V)  
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance  
AM08231v1  
DS  
AM08232v1  
V
(V)  
GS  
R
DS(on)  
(Ω)  
V
V
DS  
(V)  
V
DD=480V  
12  
0.102  
0.100  
0.098  
0.096  
0.094  
0.092  
0.090  
ID=29A  
V
GS=10V  
500  
10  
8
400  
300  
200  
6
4
2
0
100  
0
4
12  
8
16 20 24  
28  
ID  
20  
40  
50  
0
10  
30  
60  
70 80  
Q
g(nC)  
0
(A)  
90  
Figure 12. Capacitance variations  
Figure 13. Output capacitance stored energy  
AM08233v1  
AM08234v1  
C
Eoss  
(pF)  
(µJ)  
16  
10000  
1000  
Ciss  
14  
12  
10  
8
Coss  
100  
10  
1
6
4
Crss  
2
0
0
0.1  
100  
200  
400 500  
600  
1
10  
V
DS(V)  
100  
300  
VDS(V)  
Doc ID 18099 Rev 5  
7/22  
 
 
Electrical characteristics  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs  
vs temperature temperature  
AM08235v1  
AM08236v1  
V
GS(th)  
R
DS(on)  
(norm)  
(norm)  
ID=250µA  
ID=14.5A  
2.1  
1.10  
1.00  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
0.90  
0.80  
0.70  
-50  
-50  
-25  
-25  
0
25 50 75  
T
J(°C)  
0
25 50 75  
TJ(°C)  
100  
100  
Figure 16. Normalized BVDSS vs temperature Figure 17. Source-drain diode forward vs  
temperature  
AM09028v1  
!-ꢁꢀꢄꢃꢀVꢁ  
V
DS  
ꢄꢁꢆꢀ  
ꢄꢁꢂꢀ  
ꢄꢁꢅꢀ  
(norm)  
ID=1mA  
4J ꢊ ꢋꢄꢀ #  
1.10  
1.08  
1.06  
4J ꢊ ꢆꢄ #  
ꢄꢁꢀꢀ  
ꢀꢁꢃꢀ  
1.04  
1.02  
1.00  
0.98  
0.96  
4J ꢊ ꢁꢄꢀ #  
ꢀꢁꢆꢀ  
ꢀꢁꢂꢀ  
ꢀꢁꢅꢀ  
0.94  
0.92  
ꢀ
ꢅ
ꢆ
ꢄꢆ  
ꢅꢅ ꢅꢂ  
ꢄꢃ ꢅꢀ  
ꢅꢆ ꢅꢃ ꢈꢀ  
ꢀ
ꢂ
ꢃ
ꢄꢀ ꢄꢅ ꢄꢂ  
,6'ꢇ>$@  
-50  
-25  
0
25 50 75  
TJ(°C)  
100  
8/22  
Doc ID 18099 Rev 5  
 
 
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Test circuits  
3
Test circuits  
Figure 18. Switching times test circuit for  
resistive load  
Figure 19. Gate charge test circuit  
VDD  
12V  
47kΩ  
1kΩ  
100nF  
2200  
3.3  
μF  
RL  
μF  
IG=CONST  
VDD  
100Ω  
Vi=20V=VGMAX  
D.U.T.  
VG  
VD  
RG  
VGS  
2200  
μF  
D.U.T.  
2.7kΩ  
47kΩ  
PW  
1kΩ  
PW  
AM01468v1  
AM01469v1  
Figure 20. Test circuit for inductive load  
switching and diode recovery times  
Figure 21. Unclamped inductive load test  
circuit  
L
A
A
A
B
D
FAST  
DIODE  
L=100μH  
VD  
G
2200  
μF  
D.U.T.  
B
3.3  
μF  
VDD  
S
3.3  
μF  
1000  
μF  
B
VDD  
25  
Ω
ID  
D
G
RG  
S
Vi  
D.U.T.  
Pw  
AM01470v1  
AM01471v1  
Figure 22. Unclamped inductive waveform  
Figure 23. Switching time waveform  
ton  
toff  
tdoff  
V(BR)DSS  
tr  
tf  
tdon  
VD  
90%  
10%  
90%  
IDM  
10%  
VDS  
ID  
0
0
VDD  
VDD  
90%  
VGS  
10%  
AM01472v1  
AM01473v1  
Doc ID 18099 Rev 5  
9/22  
Package mechanical data  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®  
specifications, grade definitions and product status are available at: www.st.com.  
ECOPACK® is an ST trademark.  
10/22  
Doc ID 18099 Rev 5  
 
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Package mechanical data  
Table 8.  
Dim.  
D²PAK (TO-263) mechanical data  
Min.  
mm  
Typ.  
Max.  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
b2  
c
c2  
D
D1  
E
10.40  
E1  
e
8.50  
2.54  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.4  
V2  
0°  
8°  
Doc ID 18099 Rev 5  
11/22  
Package mechanical data  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Figure 24. D²PAK (TO-263) drawing  
0079457_T  
Figure 25. D²PAK footprint(a)  
16.90  
12.20  
5.08  
1.60  
3.50  
9.75  
Footprint  
a. All dimension are in millimeters  
12/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Package mechanical data  
Table 9.  
Dim.  
TO-220FP mechanical data  
Min.  
mm  
Typ.  
Max.  
A
B
4.4  
2.5  
4.6  
2.7  
D
2.5  
2.75  
0.7  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
1
F1  
F2  
G
1.70  
1.70  
5.2  
G1  
H
2.7  
10  
10.4  
L2  
L3  
L4  
L5  
L6  
L7  
Dia  
16  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
16.4  
9.3  
3
3.2  
Doc ID 18099 Rev 5  
13/22  
Package mechanical data  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Figure 26. TO-220FP drawing  
7012510_Rev_K_B  
14/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Table 10. TO-220 type A mechanical data  
Package mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
b1  
c
D
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
∅P  
Q
3.50  
3.93  
16.40  
28.90  
3.75  
2.65  
3.85  
2.95  
Doc ID 18099 Rev 5  
15/22  
Package mechanical data  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Figure 27. TO-220 type A drawing  
0015988_typeA_Rev_S  
16/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Table 11. TO-247 mechanical data  
Package mechanical data  
mm.  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
b
4.85  
2.20  
1.0  
5.15  
2.60  
1.40  
2.40  
3.40  
0.80  
20.15  
15.75  
5.60  
14.80  
4.30  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
5.30  
14.20  
3.70  
D
E
e
5.45  
18.50  
5.50  
L
L1  
L2  
∅P  
∅R  
S
3.55  
4.50  
5.30  
3.65  
5.50  
5.70  
Doc ID 18099 Rev 5  
17/22  
Package mechanical data  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Figure 28. TO-247 drawing  
0075325_G  
18/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Packaging mechanical data  
5
Packaging mechanical data  
Table 12. D²PAK (TO-263) tape and reel mechanical data  
Tape  
Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
D
10.5  
15.7  
1.5  
10.7  
15.9  
1.6  
A
B
C
D
G
N
T
330  
1.5  
12.8  
20.2  
24.4  
100  
13.2  
26.4  
30.4  
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
Base qty  
Bulk qty  
1000  
1000  
50  
T
0.25  
23.7  
0.35  
24.3  
W
Doc ID 18099 Rev 5  
19/22  
 
Packaging mechanical data  
Figure 29. Tape  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
10 pitches cumulative  
tolerance on tape +/- 0.2 mm  
P0  
P2  
Top cover  
D
T
tape  
E
F
W
K0  
B0  
A0  
D1  
P1  
User direction of feed  
R
Bending radius  
User direction of feed  
AM08852v2  
Figure 30. Reel  
T
REEL DIMENSIONS  
40mm min.  
Access hole  
At sl ot location  
B
D
C
N
A
G measured at hub  
Full radius  
Tape slot  
in core for  
tape start 25 mm min.  
width  
AM08851v2  
20/22  
Doc ID 18099 Rev 5  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
Revision history  
6
Revision history  
Table 13. Document revision history  
Date  
Revision  
Changes  
04-Nov-2010  
18-Apr-2011  
1
2
Initial release.  
Corrected EAS value in Table 4: Avalanche characteristics  
Added order code in D2PAK and TO-220FP  
Updated Table 1: Device summary, Table 2: Absolute maximum  
ratings and Table 3: Thermal data.  
14-Sep-2011  
3
Updated Section 4: Package mechanical data.  
Added Section 5: Packaging mechanical data.  
Minor text changes.  
29-Dec-2011  
01-Oct-2012  
4
5
Updated description in cover page.  
Updated title on the cover page.  
Updated figures 10, 11, 16 and 17.  
Updated Section 4: Package mechanical data.  
Minor text changes.  
Doc ID 18099 Rev 5  
21/22  
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND  
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Doc ID 18099 Rev 5  

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