STF3N62K3 [STMICROELECTRONICS]
N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK; N沟道620 V， 2.2 Ω ， 2.7 SuperMESH3 ™功率MOSFET采用D2PAK ， DPAK ， TO- 220FP ， TO- 220 ， IPAK
| 型号： | STF3N62K3 |
| 厂家： | 
ST |
| 描述： | N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK |
| 文件： | 总19页 (文件大小：567K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB3N62K3, STD3N62K3, STF3N62K3
STP3N62K3, STU3N62K3
N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET
D2PAK, DPAK, TO-220FP, TO-220, IPAK
Features
RDS(on)
max
3
3
Type
VDSS
ID
Pw
2
1
1
DPAK
STB3N62K3
STD3N62K3
STF3N62K3
STP3N62K3
STU3N62K3
620 V
620 V
620 V
620 V
620 V
< 2.5 Ω
< 2.5 Ω
2.7 A
2.7 A
45 W
45 W
IPAK
< 2.5 Ω 2.7 A(1) 20 W
3
1
< 2.5 Ω
< 2.5 Ω
2.7 A
2.7 A
45 W
45 W
D²PAK
1. Limited by package
3
3
2
2
1
1
■ 100% avalanche tested
TO-220FP
TO-220
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
Figure 1.
Internal schematic diagram
characteristics
■ Zener-protected
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
Table 1.
Device summary
Order codes
Marking
Package
D²PAK
Packaging
STB3N62K3
STD3N62K3
STF3N62K3
STP3N62K3
STU3N62K3
6N62K3
6N62K3
6N62K3
6N62K3
6N62K3
Tape and reel
Tape and reel
Tube
DPAK
TO-220FP
TO-220
IPAK
Tube
Tube
July 2008
Rev 1
1/19
www.st.com
19
Contents
STB/D/F/P/U3N62K3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
STB/D/F/P/U3N62K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220
D²PAK
DPAK
IPAK
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
620
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
2.7
2.7 (1)
1.7 (1)
10.8(1)
20
A
A
ID
1.7
10.8
45
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
0.36
0.16
W/°C
Gate source ESD
VESD(G-S)
2500
9
V
(HBM-C = 100 pF, R = 1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
--
2500
V
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 2.7 A, di/dt
≤ 200 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
TO-220 D²PAK DPAK IPAK TO-220FP Unit
Thermal resistance junction-case
max
Rthj-case
Rthj-pcb
Rthj-amb
Tl
2.78
50
6.25
--
°C/W
°C/W
°C/W
°C
Thermal resistance junction-pcb
max
--
--
Thermal resistance junction-amb
max
62.5
100
300
62.5
Maximum lead temperature for
soldering purpose
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
2.7
A
Single pulse avalanche energy
EAS
100
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
3/19
Electrical characteristics
STB/D/F/P/U3N62K3
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 5.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
620
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
50
Gate-body leakage
IGSS
VGS
=
20 V
10
µA
V
current (VDS = 0)
VGS(th)
RDS(on
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
3
3.75
2.2
4.5
2.5
VGS = 10 V, ID = 1.4 A
Ω
resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Forward
transconductance
gfs (1)
VDS = 15 V, ID = 1.4 A
2.1
S
Input capacitance
Ciss
Coss
Crss
385
55
6
pF
pF
pF
Output capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
Reverse transfer
capacitance
Equivalent output
capacitance
(1)
COSS eq
VGS = 0, VDS = 0 to 496 V
f = 1 MHz open drain
32.3
10
pF
Intrinsic gate
resistance
RG
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 496 V, ID = 2.7 A,
VGS = 10 V
13
2.5
7.5
nC
nC
nC
(see Figure 17)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
9
ns
ns
ns
ns
VDD = 310 V, ID =1.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
6.8
22
Turn-off-delay time
Fall time
15.6
4/19
STB/D/F/P/U3N62K3
Electrical characteristics
Min. Typ. Max. Unit
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
2.7
A
A
(1)
ISDM
Source-drain current (pulsed)
10.8
(2)
VSD
Forward on voltage
ISD = 2.7 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
190
825
9
ns
nC
A
ISD = 2.7 A, di/dt = 100 A/µs
Qrr
VDD = 60 V (see Figure 21)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.7 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21)
255
1100
10
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
Gate-source breakdown
voltage
(1)
BVGSO
Igs= 1 mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/19
Electrical characteristics
STB/D/F/P/U3N62K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
IPAK, DPAK, D²PAK
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
IPAK, DPAK, D²PAK
Figure 4.
Figure 6.
6/19
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Output characteristics
Transfer characteristics
STB/D/F/P/U3N62K3
Electrical characteristics
Figure 8.
Normalized BV
vs temperature Figure 9.
Static drain-source on resistance
DSS
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
7/19
Electrical characteristics
STB/D/F/P/U3N62K3
Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
temperature
8/19
STB/D/F/P/U3N62K3
Test circuits
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped Inductive load test
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
9/19
Package mechanical data
STB/D/F/P/U3N62K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/19
STB/D/F/P/U3N62K3
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/19
Package mechanical data
STB/D/F/P/U3N62K3
TO-220FP mechanical data
mm.
inch
Dim.
Min.
4.40
2.5
Typ
Max.
4.60
2.7
Min.
Typ.
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
D
2.5
2.75
0.70
1.00
1.50
1.50
5.20
2.70
10.40
E
0.45
0.75
1.15
1.15
4.95
2.40
10
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
16
0.630
28.6
9.80
2.9
30.6
10.60
3.6
1.126
0.385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
15.90
9
16.40
9.30
3.2
3
L3
L6
L7
Dia
1
2 3
L5
L2
L4
7012510-I
12/19
STB/D/F/P/U3N62K3
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.64
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
A
A1
b
b2
b4
c
5.20
0.45
0.48
6.00
6.40
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
(L1)
L2
V1
1.20
0.80
10 o
0068771_H
13/19
Package mechanical data
STB/D/F/P/U3N62K3
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
typ
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
14/19
STB/D/F/P/U3N62K3
Package mechanical data
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
15/19
Package mechanical data
STB/D/F/P/U3N62K3
5
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
16/19
STB/D/F/P/U3N62K3
Package mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
17/19
Revision history
STB/D/F/P/U3N62K3
6
Revision history
Table 10. Document revision history
Date
Revision
Changes
10-Jul-2008
1
First release
18/19
STB/D/F/P/U3N62K3
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19/19
相关型号：
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