STF3HNK90Z [STMICROELECTRONICS]
N-CHANNEL 900V - 3.5W - 3A TO-220 - TO-220FP Zener-Protected SuperMESHTM Power MOSFET; N沟道900V - 3.5W - 3A TO- 220 - TO- 220FP齐纳保护SuperMESHTM功率MOSFET
| 型号： | STF3HNK90Z |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 900V - 3.5W - 3A TO-220 - TO-220FP Zener-Protected SuperMESHTM Power MOSFET |
| 文件： | 总10页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP3HNK90Z - STF3HNK90Z
N-CHANNEL 900V - 3.5Ω - 3A TO-220 - TO-220FP
Zener-Protected SuperMESH™Power MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP3HNK90Z
STF3HNK90Z
900 V
900 V
< 4.2 Ω
< 4.2 Ω
3 A
3 A
90 W
25 W
TYPICAL R (on) = 3.5 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
2
1
TO-220
TO-220FP
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
STP3HNK90Z
STF3HNK90Z
MARKING
P3HNK90Z
F3HNK90Z
PACKAGE
PACKAGING
TUBE
TO-220
TO-220FP
TUBE
August 2003
1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP3HNK90Z - STF3HNK90Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3HNK90Z
STF3HNK90Z
V
Drain-source Voltage (V = 0)
900
900
± 30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
3
3 (*)
1.89 (*)
12 (*)
25
A
D
C
I
Drain Current (continuous) at T = 100°C
1.89
12
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
90
W
TOT
C
Derating Factor
0.72
0.2
W/°C
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
3000
4.5
ESD(G-S)
dv/dt (1)
V/ns
V
V
ISO
-
2500
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤3A, di/dt ≤200A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1.38
5
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
T
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
3
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
200
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
STP3HNK90Z - STF3HNK90Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1 mA, V = 0
900
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 30 V
±10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 50 µA
Gate Threshold Voltage
3
3.75
3.5
4.5
4.2
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10 V, I = 1.5 A
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= 15 V I = 1.5 A
1.9
S
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
690
71
14.4
pF
pF
pF
iss
DS
GS
oss
rss
C
(3) Equivalent Output
Capacitance
= 0V, V = 0V to 720V
88
pF
oss eq.
GS
DD
DS
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
R
= 450 V, I = 1.5 A
23
28
42
27
ns
ns
ns
ns
d(on)
D
t
= 4.7Ω V = 10 V
GS
r
G
t
(Resistive Load see, Figure 3)
d(off)
t
f
Q
Q
Q
V
V
= 720V, I = 3 A,
= 10V
35
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
26
5.7
13.9
nC
nC
nC
g
DD
GS
D
gs
gd
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
3
12
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
= 3 A, V = 0
Forward On Voltage
1.6
V
SD
SD
GS
t
Q
I
= 3 A, di/dt = 100A/µs
= 50 V, T = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
494
2.4
9.8
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
= 3 A, di/dt = 100A/µs
= 50 V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
628
3.2
10.2
ns
µC
A
rr
SD
V
DD
rr
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/10
STP3HNK90Z - STF3HNK90Z
Safe Operating Area For TO-220
Thermal Impedance For TO-220
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/10
STP3HNK90Z - STF3HNK90Z
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/10
STP3HNK90Z - STF3HNK90Z
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/10
STP3HNK90Z - STF3HNK90Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/10
STP3HNK90Z - STF3HNK90Z
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
4.40
0.61
1.15
0.49
15.25
10
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/10
STP3HNK90Z - STF3HNK90Z
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
9/10
STP3HNK90Z - STF3HNK90Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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10/10
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