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STD30PF03L-1 [STMICROELECTRONICS]

P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET⑩ II POWER MOSFET; P沟道30V - 0.025ohm - 24A DPAK / IPAK STripFET⑩ II功率MOSFET
STD30PF03L-1
型号： STD30PF03L-1
厂家： ST    ST
描述：

P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET⑩ II POWER MOSFET
P沟道30V - 0.025ohm - 24A DPAK / IPAK STripFET⑩ II功率MOSFET

晶体 晶体管 功率场效应晶体管
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STD30PF03L  
STD30PF03L-1  
P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK  
STripFET™ II POWER MOSFET  
PRELIMINARY DATA  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD30PF03L  
STD30PF03L-1  
30 V  
30 V  
< 0.028Ω  
< 0.028Ω  
24 A  
24 A  
3
3
■
■
TYPICAL R  
STANDARD OUTLINE FOR EASY  
= 0.025Ω  
DS(on)  
2
1
1
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
LOW GATE CHARGE  
■
■
■
DPAK  
IPAK  
EXTREMELY LOW FIGURE OF MERIT  
(R  
* Q )  
g
DS(on)  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
This Power MOSFET is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting transis-  
tor shows extremely high packing density for low  
on-resistance and low gate charge.  
APPLICATIONS  
■
DC-DC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
Drain-source Voltage (V = 0)  
30  
30  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
DGR  
GS  
V
Gate- source Voltage  
± 16  
24  
V
GS  
I (#)  
D
Drain Current (continuous) at T = 25°C  
A
C
I (#)  
D
Drain Current (continuous) at T = 100°C  
24  
A
C
I
( )  
Drain Current (pulsed)  
96  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
70  
W
C
Derating Factor  
0.47  
– 55 to 175  
175  
W/°C  
°C  
°C  
T
stg  
Storage Temperature  
T
Max. Operating Junction Temperature  
j
Note:For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
(●) Pulse width limited by safe operating area  
(#) Current limited by wire bonding  
May 2002  
1/8  
STD30PF03L - STD30PF03L-1  
THERMAL DATA  
Rthj-case  
Thermal Resistance Junction-case Max  
2.14  
100  
275  
°C/W  
°C/W  
°C  
Rthj-amb  
Thermal Resistance Junction-ambient Max  
Maximum Operating Junction Temperature  
T
j
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
I
Avalanche Current, Repetitive or Not-Repetitive  
24  
A
AR  
(pulse width limited by T max)  
j
E
AS  
Single Pulse Avalanche Energy  
350  
mJ  
(starting T = 25 °C, I = I , V = 25 V)  
j
D
AR  
DD  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
D
= 250 µA, V = 0  
30  
V
(BR)DSS  
GS  
Breakdown Voltage  
I
Zero Gate Voltage  
V
V
V
= Max Rating  
1
µA  
µA  
nA  
DSS  
DS  
Drain Current (V = 0)  
GS  
= Max Rating, T = 125 °C  
10  
DS  
GS  
C
I
Gate-body Leakage  
= ± 16 V  
±100  
GSS  
Current (V = 0)  
DS  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
GS(th)  
V
DS  
V
GS  
V
GS  
= V , I = 250µA  
Gate Threshold Voltage  
1
GS  
D
R
Static Drain-source On  
Resistance  
= 10 V, I = 12 A  
0025  
0.028  
0.040  
Ω
DS(on)  
D
= 5 V, I = 12 A  
0.032  
Ω
D
DYNAMIC  
Symbol  
Parameter  
Forward Transconductance  
Input Capacitance  
Test Conditions  
Min.  
Typ.  
23  
Max.  
Unit  
S
g
fs  
(1)  
V
= 15 V I = 12 A  
DS  
, D  
C
C
V
= 25V, f = 1 MHz, V = 0  
1670  
345  
120  
pF  
pF  
pF  
iss  
DS  
GS  
Output Capacitance  
oss  
C
rss  
Reverse Transfer  
Capacitance  
2/8  
STD30PF03L - STD30PF03L-1  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
R
= 24 V, I = 24 A  
Turn-on Delay Time  
64  
ns  
d(on)  
DD  
D
= 4.7Ω V = 4.5V  
G
GS  
t
Rise Time  
122  
ns  
r
(see test circuit, Figure 3)  
Q
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
V
V
= 15 V, I = 24 A,  
= 5 V  
18.5  
5.5  
11  
25  
nC  
nC  
nC  
g
DD  
D
Q
gs  
Q
gd  
GS  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
t
Turn-off-Delay Time  
Fall Time  
V
DD  
= 24 V, I = 24 A,  
36  
26  
ns  
ns  
d(off)  
D
t
f
R = 4.7Ω, V = 4.5V  
G GS  
(see test circuit, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
24  
Unit  
A
I
Source-drain Current  
SD  
I
(2)  
(1)  
Source-drain Current (pulsed)  
Forward On Voltage  
96  
A
SDM  
V
I
I
= 24 A, V = 0  
2.3  
V
SD  
SD  
GS  
t
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
40  
52  
2.6  
ns  
µC  
A
= 24 A, di/dt = 100 A/µs,  
= 24 V, T = 150 °C  
rr  
SD  
Q
V
rr  
RRM  
DD  
j
I
(see test circuit, Figure 5)  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
3/8  
STD30PF03L - STD30PF03L-1  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
4/8  
STD30PF03L - STD30PF03L-1  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
TYP.  
MAX.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
MIN.  
0.087  
0.035  
0.001  
0.025  
0.204  
0.018  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.213  
0.024  
0.024  
0.244  
0.260  
0.181  
0.398  
A
A1  
A2  
B
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.8  
0.031  
0.60  
0o  
1.00  
8o  
0.024  
0o  
0.039  
0o  
P032P_B  
5/8  
STD30PF03L - STD30PF03L-1  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
6/8  
STD30PF03L - STD30PF03L-1  
DPAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
All dimensions  
are in millimeters  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
* on sales type  
7/8  
STD30PF03L - STD30PF03L-1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
8/8  

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