STD30PF03LT4 [STMICROELECTRONICS]
P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK STripFET? II Power MOSFET; P沟道30 V - 0.025 Ω - 24 A - DPAK / IPAK的STripFET ？二功率MOSFET
| 型号： | STD30PF03LT4 |
| 厂家： | 
ST |
| 描述： | P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK STripFET? II Power MOSFET |
| 文件： | 总13页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD30PF03LT4
STD30PF03L-1
P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK
STripFET™ II Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STD30PF03LT4
STD30PF03L-1
30 V
30 V
< 0.028 Ω
< 0.028 Ω
24 A
24 A
3
3
2
1
1
■ Standard outline for easy automated surface
DPAK
IPAK
mount assembly
■ Low threshold device
■ Low gate charge
Application
■ Switching applications
Figure 1.
Internal schematic diagram
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance and low gate charge.
Table 1.
Device summary
Order codes
Marking
Package
DPAK
IPAK
Packaging
STD30PF03LT4
STD30PF03L-1
D30PF03L
D30PF03L
Tape & reel
Tube
January 2008
Rev 2
1/13
www.st.com
13
Electrical ratings
STD30PF03LT4 - STD30PF03L-1
1
Electrical ratings
Table 2.
Symbol
VDS
Absolute maximum ratings
Parameter
Value
30
Unit
V
Drain-source voltage (VGS=0)
Gate-source voltage
VGS
16
V
(1)
Drain current (continuous) at TC = 25 °C
24
A
ID
(1)
Drain current (continuous) at TC = 100 °C
24
96
A
A
ID
(2)
Drain current (pulsed)
IDM
PTOT
Total dissipation at TC=25 °C
Derating factor
70
W
W/°C
mJ
0.47
850
(3)
Single pulse avalanche energy
Storage temperature
EAS
Tstg
Tj
-55 to 175
175
°C
°C
Max. operating junction temperature
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting TJ = 25 °C, ID = 12 A, VDD =15 V
Table 3.
Symbol
Thermal data
Max value
Parameter
Unit
DPAK
IPAK
Rthj-case
Rthj-amb
Rthj-pcb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
2.14
°C/W
°C/W
°C/W
°C/W
--
100
--
50(1)
--
Maximum lead temperature for soldering purpose
275
1. When mounted on FR- 4board of 1 inch².
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
2/13
STD30PF03LT4 - STD30PF03L-1
Electrical characteristics
2
Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250 µA, VGS= 0
30
V
V
DS=Max rating
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS=Max rating,Tc=100 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS = 16 V
±100
nA
V
VGS(th)
RDS(on)
VDS= VGS, ID = 250 µA
Gate threshold voltage
1
VGS= 10 V, ID= 12 A
VGS= 5 V, ID= 12 A
0.025 0.028
0.032 0.040
Ω
Ω
Static drain-source on
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
VDS =15 V, ID= 12 A
gfs
Forward transconductance
23
S
Input capacitance
Ciss
Coss
Crss
1670
345
pF
pF
pF
Output capacitance
VDS =25 V, f=1MHz, VGS=0
Reverse transfer
capacitance
120
VDD=15 V, ID = 24 A
VGS =5 V
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
18.6
5.5
11
28
nC
nC
nC
Figure 15
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
3/13
Electrical characteristics
STD30PF03LT4 - STD30PF03L-1
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min Typ Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
64
122
36
ns
ns
ns
ns
VDD=25 V, ID=24 A,
RG=4.7 Ω, VGS=5 V
Figure 14
Rise time
Turn-off delay time
Fall time
26
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD
Source-drain current
24
96
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 12 A, VGS=0
1.3
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
40
52
ns
µC
A
ISD=24 A, di/dt =100 A/µs,
VDD=50 V, Tj=150 °C
Qrr
Figure 16
IRRM
2.6
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
4/13
STD30PF03LT4 - STD30PF03L-1
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Output characteristics
Transconductance
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Figure 4.
Transfer characteristics
Figure 6.
Static drain-source on resistance
5/13
Electrical characteristics
STD30PF03LT4 - STD30PF03L-1
Capacitance variations
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized breakdown voltage vs
temperature
6/13
STD30PF03LT4 - STD30PF03L-1
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for diode recovery
behavior
7/13
Package mechanical data
STD30PF03LT4 - STD30PF03L-1
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/13
STD30PF03LT4 - STD30PF03L-1
Package mechanical data
DPAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
9/13
Package mechanical data
STD30PF03LT4 - STD30PF03L-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
10/13
STD30PF03LT4 - STD30PF03L-1
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
11/13
Revision history
STD30PF03LT4 - STD30PF03L-1
6
Revision history
Table 8.
Date
Document revision history
Revision
Changes
– Document reformatted
– Corrected marking on Table 1: Device summary
14-Jan-2008
2
12/13
STD30PF03LT4 - STD30PF03L-1
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